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W. G. Lyons
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Journal Articles

High‐temperature superconductive delay lines and filters

W. G. Lyons, R. S. Withers, J. M. Hamm, Alfredo C. Anderson, D. E. Oates, P. M. Mankiewich, M. L. O’Malley, R. R. Bonetti, A. E. Williams, N. Newman
Journal: AIP Conference Proceedings
AIP Conf. Proc. 251, 639–658 (1992)
https://doi.org/10.1063/1.42046
Published: April 1992
View article titled, High‐temperature superconductive delay lines and filters
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Journal Articles

Double heterojunction GaAs/AlxGa1−xAs bipolar transistors prepared by molecular beam epitaxy

S. L. Su, R. Fischer, W. G. Lyons, O. Tejayadi, D. Arnold, J. Klem, H. Morkoç
Journal: Journal of Applied Physics
J. Appl. Phys. 54, 6725–6731 (1983)
https://doi.org/10.1063/1.331860
Published: November 1983
View article titled, Double heterojunction GaAs/Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>As bipolar transistors prepared by molecular beam epitaxy
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Journal Articles

Use of a superlattice to enhance the interface properties between two bulk heterolayers

T. J. Drummond, J. Klem, D. Arnold, R. Fischer, R. E. Thorne, W. G. Lyons, H. Morkoç
Journal: Applied Physics Letters
Appl. Phys. Lett. 42, 615–617 (1983)
https://doi.org/10.1063/1.94021
Published: April 1983
View article titled, Use of a superlattice to enhance the interface properties between two bulk heterolayers
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Journal Articles

Design and fabrication of high transconductance modulation‐doped (Al,Ga)As/GaAs FETs

K. Lee, M. S. Shur, T. J. Drummond, S. L. Su, W. G. Lyons, R. Fischer, H. Morkoç
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 1, 186–189 (1983)
https://doi.org/10.1116/1.582484
Published: April 1983
View article titled, Design and fabrication of high transconductance modulation‐doped (Al,Ga)As/GaAs FETs
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Journal Articles

Characteristics of modulation‐doped AlxGa1−xAl/GaAs field‐effect transistors: Effect of donor‐electron separation

T. J. Drummond, R. Fischer, S. L. Su, W. G. Lyons, H. Morkoç, K. Lee, M. S. Shur
Journal: Applied Physics Letters
Appl. Phys. Lett. 42, 262–264 (1983)
https://doi.org/10.1063/1.93908
Published: February 1983
View article titled, Characteristics of modulation‐doped Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>Al/GaAs field‐effect transistors: Effect of donor‐electron separation
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Journal Articles

Si incorporation in AlxGa1−xAs grown by molecular beam epitaxy

T. J. Drummond, W. G. Lyons, R. Fischer, R. E. Thorne, H. Morkoç, C. G. Hopkins, C. A. Evans, Jr.
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 957–960 (1982)
https://doi.org/10.1116/1.571873
Published: November 1982
View article titled, Si incorporation in Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>As grown by molecular beam epitaxy
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Journal Articles

Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy

S. L. Su, R. E. Thorne, R. Fischer, W. G. Lyons, H. Morkoç
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 961–964 (1982)
https://doi.org/10.1116/1.571874
Published: November 1982
View article titled, Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy
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Journal Articles

Use of a GaAs smoothing layer to improve the heterointerface of GaAs/AlxGa1−xAs field‐effect transistors

W. Kopp, S. L. Su, R. Fischer, W. G. Lyons, R. E. Thorne, T. J. Drummond, H. Morkoç, A. Y. Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 41, 563–565 (1982)
https://doi.org/10.1063/1.93596
Published: September 1982
View article titled, Use of a GaAs smoothing layer to improve the heterointerface of GaAs/Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>As field‐effect transistors
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Journal Articles

An explanation for anomalous donor activation energies in Al0.35Ga0.65As

R. E. Thorne, T. J. Drummond, W. G. Lyons, R. Fischer, H. Morkoç
Journal: Applied Physics Letters
Appl. Phys. Lett. 41, 189–191 (1982)
https://doi.org/10.1063/1.93457
Published: July 1982
View article titled, An explanation for anomalous donor activation energies in Al<sub>0.35</sub>Ga<sub>0.65</sub>As
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