1-18 of 18
V. V. Chaldyshev
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

(In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell

A. A. Ivanov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsulnikov
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 191105 (2024)
https://doi.org/10.1063/5.0233600
Published: November 2024
View articletitled, (In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell
Open the PDF for (In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell in another window
Journal Articles

Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure

A. A. Ivanov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsulnikov
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 121106 (2023)
https://doi.org/10.1063/5.0160512
Published: September 2023
View articletitled, Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure
Open the PDF for Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure in another window
Journal Articles

Critical spatial disorder in InGaN resonant Bragg structures

A. A. Ivanov, V. V. Chaldyshev, V. I. Ushanov, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsulnikov
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 041101 (2022)
https://doi.org/10.1063/5.0095417
Published: July 2022
View articletitled, Critical spatial disorder in InGaN resonant Bragg structures
Open the PDF for Critical spatial disorder in InGaN resonant Bragg structures in another window
Includes: Supplementary data
Journal Articles

Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells

A. S. Bolshakov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsulnikov, M. A. Yagovkina
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 133101 (2017)
https://doi.org/10.1063/1.4979636
Published: April 2017
View articletitled, Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells
Open the PDF for Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells in another window
Journal Articles

Resonant optical properties of AlGaAs/GaAs multiple-quantum-well based Bragg structure at the second quantum state

Y. Chen, N. Maharjan, Z. Liu, M. L. Nakarmi, V. V. Chaldyshev, E. V. Kundelev, A. N. Poddubny, A. P. Vasil'ev, M. A. Yagovkina, N. M. Shakya
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 103101 (2017)
https://doi.org/10.1063/1.4978252
Published: March 2017
View articletitled, Resonant optical properties of AlGaAs/GaAs multiple-quantum-well based Bragg structure at the second quantum state
Open the PDF for Resonant optical properties of AlGaAs/GaAs multiple-quantum-well based Bragg structure at the second quantum state in another window
Journal Articles

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

N. Cherkashin, S. Reboh, M. J. Hÿtch, A. Claverie, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, V. V. Chaldyshev
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 173115 (2013)
https://doi.org/10.1063/1.4804380
Published: May 2013
View articletitled, Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy
Open the PDF for Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy in another window
Journal Articles

Optical lattices of InGaN quantum well excitons

V. V. Chaldyshev, A. S. Bolshakov, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsulnikov, M. A. Yagovkina, Taek Kim, Youngsoo Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 251103 (2011)
https://doi.org/10.1063/1.3670499
Published: December 2011
View articletitled, Optical lattices of InGaN quantum well excitons
Open the PDF for Optical lattices of InGaN quantum well excitons in another window
Journal Articles

Resonant optical reflection by a periodic system of the quantum well excitons at the second quantum state

V. V. Chaldyshev, Yuechao Chen, A. N. Poddubny, A. P. Vasil’ev, Zhiheng Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 073112 (2011)
https://doi.org/10.1063/1.3554429
Published: February 2011
View articletitled, Resonant optical reflection by a periodic system of the quantum well excitons at the second quantum state
Open the PDF for Resonant optical reflection by a periodic system of the quantum well excitons at the second quantum state in another window
Journal Articles

Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism

N. A. Cherkashin, A. Claverie, C. Bonafos, V. V. Chaldyshev, N. A. Bert, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, P. Werner
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 023520 (2007)
https://doi.org/10.1063/1.2749303
Published: July 2007
View articletitled, Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism
Open the PDF for Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism in another window
Journal Articles

Zinc blende GaAs films grown on wurtzite GaN∕sapphire templates

V. V. Chaldyshev, B. Nielsen, E. E. Mendez, Yu. G. Musikhin, N. A. Bert, Zh. Ma, Todd Holden
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 131916 (2005)
https://doi.org/10.1063/1.1875759
Published: March 2005
View articletitled, Zinc blende GaAs films grown on wurtzite GaN∕sapphire templates
Open the PDF for Zinc blende GaAs films grown on wurtzite GaN∕sapphire templates in another window
Journal Articles

Investigation of dislocation loops associated with As–Sb nanoclusters in GaAs

V. V. Chaldyshev, A. L. Kolesnikova, N. A. Bert, A. E. Romanov
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 024309 (2005)
https://doi.org/10.1063/1.1833581
Published: December 2004
View articletitled, Investigation of dislocation loops associated with As–Sb nanoclusters in GaAs
Open the PDF for Investigation of dislocation loops associated with As–Sb nanoclusters in GaAs in another window
Journal Articles

Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films

V. V. Chaldyshev, Fred H. Pollak, M. Pophristic, S. P. Guo, I. Ferguson
Journal: Journal of Applied Physics
J. Appl. Phys. 92, 6601–6606 (2002)
https://doi.org/10.1063/1.1519342
Published: December 2002
View articletitled, Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films
Open the PDF for Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films in another window
Journal Articles

Local stresses induced by nanoscale As–Sb clusters in GaAs matrix

V. V. Chaldyshev, N. A. Bert, A. E. Romanov, A. A. Suvorova, A. L. Kolesnikova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, P. Werner, N. D. Zakharov, A. Claverie
Journal: Applied Physics Letters
Appl. Phys. Lett. 80, 377–379 (2002)
https://doi.org/10.1063/1.1426691
Published: January 2002
View articletitled, Local stresses induced by nanoscale As–Sb clusters in GaAs matrix
Open the PDF for Local stresses induced by nanoscale As–Sb clusters in GaAs matrix in another window
Journal Articles

Enhanced As–Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs

V. V. Chaldyshev, N. A. Bert, Yu. G. Musikhin, A. A. Suvorova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, P. Werner, U. Gösele
Journal: Applied Physics Letters
Appl. Phys. Lett. 79, 1294–1296 (2001)
https://doi.org/10.1063/1.1394166
Published: August 2001
View articletitled, Enhanced As–Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs
Open the PDF for Enhanced As–Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs in another window
Journal Articles

Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs

N. A. Bert, V. V. Chaldyshev, A. A. Suvorova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, P. Werner
Journal: Applied Physics Letters
Appl. Phys. Lett. 74, 1588–1590 (1999)
https://doi.org/10.1063/1.123625
Published: March 1999
View articletitled, Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
Open the PDF for Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs in another window
Journal Articles

In–Ga intermixing in low-temperature grown GaAs delta doped with In

N. A. Bert, V. V. Chaldyshev, Yu. G. Musikhin, A. A. Suvorova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, P. Werner
Journal: Applied Physics Letters
Appl. Phys. Lett. 74, 1442–1444 (1999)
https://doi.org/10.1063/1.123576
Published: March 1999
View articletitled, In–Ga intermixing in low-temperature grown GaAs delta doped with In
Open the PDF for In–Ga intermixing in low-temperature grown GaAs delta doped with In in another window
Journal Articles

Bistability of charge accumulated in low-temperature-grown GaAs

P. N. Brounkov, V. V. Chaldyshev, A. A. Suvorova, N. A. Bert, S. G. Konnikov, A. V. Chernigovskii, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin
Journal: Applied Physics Letters
Appl. Phys. Lett. 73, 2796–2798 (1998)
https://doi.org/10.1063/1.122593
Published: November 1998
View articletitled, Bistability of charge accumulated in low-temperature-grown GaAs
Open the PDF for Bistability of charge accumulated in low-temperature-grown GaAs in another window
Journal Articles

Enhanced arsenic excess in low-temperature grown GaAs due to indium doping

N. A. Bert, V. V. Chaldyshev, A. E. Kunitsyn, Yu. G. Musikhin, N. N. Faleev, V. V. Tretyakov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin
Journal: Applied Physics Letters
Appl. Phys. Lett. 70, 3146–3148 (1997)
https://doi.org/10.1063/1.119091
Published: June 1997
View articletitled, Enhanced arsenic excess in low-temperature grown GaAs due to indium doping
Open the PDF for Enhanced arsenic excess in low-temperature grown GaAs due to indium doping in another window