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Journal Articles

Variations of paramagnetic defects and dopants in geo-MoS₂ from diverse localities probed by ESR

A. Stesmans, B. Schoenaers, V. V. Afanas’ev

J. Chem. Phys. 152, 234702 (2020)

https://doi.org/10.1063/5.0002046

Published: June 2020

View article titled, Variations of paramagnetic defects and dopants in geo-MoS2 from diverse localities probed by ESR

Journal Articles

Contact resistance at graphene/MoS₂ lateral heterostructures

M. Houssa, K. Iordanidou, A. Dabral, A. Lu, R. Meng, G. Pourtois, V. V. Afanas'ev, A. Stesmans

Appl. Phys. Lett. 114, 163101 (2019)

https://doi.org/10.1063/1.5083133

Published: April 2019

View article titled, Contact resistance at graphene/MoS2 lateral heterostructures

Journal Articles

Impact of VUV photons on SiO₂ and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

M. R. Baklanov, V. Jousseaume, T. V. Rakhimova, D. V. Lopaev, Yu. A. Mankelevich, V. V. Afanas'ev, J. L. Shohet, S. W. King, E. T. Ryan

Appl. Phys. Rev. 6, 011301 (2019)

https://doi.org/10.1063/1.5054304

Published: February 2019

View article titled, Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Journal Articles

Ferromagnetism in two-dimensional hole-doped SnO

M. Houssa, K. Iordanidou, G. Pourtois, V. V. Afanas’ev, A. Stesmans

AIP Advances 8, 055010 (2018)

https://doi.org/10.1063/1.5025272

Published: May 2018

View article titled, Ferromagnetism in two-dimensional hole-doped SnO

Journal Articles

Defect localization of metal interconnection lines in 3-dimensional through-silicon-via structures by differential scanning photocapacitance microscopy

K. J. P. Jacobs, M. Stucchi, V. V. Afanas'ev, M. Gonzalez, K. Croes, I. De Wolf, E. Beyne

Appl. Phys. Lett. 112, 071904 (2018)

https://doi.org/10.1063/1.5012892

Published: February 2018

View article titled, Defect localization of metal interconnection lines in 3-dimensional through-silicon-via structures by differential scanning photocapacitance microscopy

Journal Articles

Band alignment at interfaces of synthetic few-monolayer MoS₂ with SiO₂ from internal photoemission

I. Shlyakhov, J. Chai, M. Yang, S. J. Wang, V. V. Afanas’ev, M. Houssa, A. Stesmans

APL Mater. 6, 026801 (2018)

https://doi.org/10.1063/1.5002617

Published: November 2017

View article titled, Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission

Includes: Supplementary data

Journal Articles

ESR identification of the nitrogen acceptor in 2H-polytype synthetic MoS₂: Dopant level and activation

B. Schoenaers, A. Stesmans, V. V. Afanas’ev

AIP Advances 7, 105006 (2017)

https://doi.org/10.1063/1.5006737

Published: October 2017

View article titled, ESR identification of the nitrogen acceptor in 2H-polytype synthetic MoS2: Dopant level and activation

Journal Articles

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al₂O₃

H.-Y. Chou, E. O'Connor, A. O'Mahony, I. M. Povey, P. K. Hurley, Lin Dong, P. D. Ye, V. V. Afanas'ev, M. Houssa, A. Stesmans

J. Appl. Phys. 120, 235701 (2016)

https://doi.org/10.1063/1.4971178

Published: December 2016

View article titled, Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

Journal Articles

ESR study of p-type natural 2H-polytype MoS₂ crystals: The As acceptor activity

A. Stesmans, S. Iacovo, V. V. Afanas'ev

Appl. Phys. Lett. 109, 172104 (2016)

https://doi.org/10.1063/1.4965841

Published: October 2016

View article titled, ESR study of p-type natural 2H-polytype MoS2 crystals: The As acceptor activity

Journal Articles

Intrinsic electron traps in atomic-layer deposited HfO₂ insulators

F. Cerbu, O. Madia, D. V. Andreev, S. Fadida, M. Eizenberg, L. Breuil, J. G. Lisoni, J. A. Kittl, J. Strand, A. L. Shluger, V. V. Afanas'ev, M. Houssa, A. Stesmans

Appl. Phys. Lett. 108, 222901 (2016)

https://doi.org/10.1063/1.4952718

Published: May 2016

View article titled, Intrinsic electron traps in atomic-layer deposited HfO2 insulators

Includes: Supplementary data

Journal Articles

Characterization of a n+3C/n−4H SiC heterojunction diode

R. A. Minamisawa, A. Mihaila, I. Farkas, V. S. Teodorescu, V. V. Afanas'ev, C.-W. Hsu, E. Janzén, M. Rahimo

Appl. Phys. Lett. 108, 143502 (2016)

https://doi.org/10.1063/1.4945332

Published: April 2016

View article titled, Characterization of a n+3C/n−4H SiC heterojunction diode

Journal Articles

Publisher's Note: “Defect-induced bandgap narrowing in low-k dielectrics” [Appl. Phys. Lett. 107 , 082903 (2015)]

X. Guo, H. Zheng, S. W. King, V. V. Afanas'ev, M. R. Baklanov, J.-F. de Marneffe, Y. Nishi, J. L. Shohet

Appl. Phys. Lett. 107, 139903 (2015)

https://doi.org/10.1063/1.4931961

Published: September 2015

View article titled, Publisher's Note: “Defect-induced bandgap narrowing in low-k dielectrics” [Appl. Phys. Lett. 107 , 082903 (2015)]

Journal Articles

Defect-induced bandgap narrowing in low-k dielectrics

X. Guo, H. Zheng, S. W. King, V. V. Afanas'ev, M. R. Baklanov, J.-F. de Marneffe, Y. Nishi, J. L. Shohet

Appl. Phys. Lett. 107, 082903 (2015)

https://doi.org/10.1063/1.4929702

Published: August 2015

View article titled, Defect-induced bandgap narrowing in low-k dielectrics

Journal Articles

On the bipolar resistive-switching characteristics of Al₂O₃- and HfO₂-based memory cells operated in the soft-breakdown regime

L. Goux, N. Raghavan, A. Fantini, R. Nigon, S. Strangio, R. Degraeve, G. Kar, Y. Y. Chen, F. De Stefano, V. V. Afanas'ev, M. Jurczak

J. Appl. Phys. 116, 134502 (2014)

https://doi.org/10.1063/1.4896841

Published: October 2014

View article titled, On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

Journal Articles

Hydrogen interaction kinetics of Ge dangling bonds at the Si_0.25Ge_0.75/SiO₂ interface

A. Stesmans, T. Nguyen Hoang, V. V. Afanas'ev

J. Appl. Phys. 116, 044501 (2014)

https://doi.org/10.1063/1.4880739

Published: July 2014

View article titled, Hydrogen interaction kinetics of Ge dangling bonds at the Si0.25Ge0.75/SiO2 interface

Journal Articles

Band alignment at interfaces of amorphous Al₂O₃ with Ge_1−xSn_x- and strained Ge-based channels

H.-Y. Chou, V. V. Afanas'ev, M. Houssa, A. Stesmans, B. Vincent, F. Gencarelli, Y. Shimura, C. Merckling, R. Loo, O. Nakatsuka, S. Zaima

Appl. Phys. Lett. 104, 202107 (2014)

https://doi.org/10.1063/1.4878558

Published: May 2014

View article titled, Band alignment at interfaces of amorphous Al2O3 with Ge1−xSnx- and strained Ge-based channels

Journal Articles

The origin of white luminescence from silicon oxycarbide thin films

V. Nikas, S. Gallis, M. Huang, A. E. Kaloyeros, A. P. D. Nguyen, A. Stesmans, V. V. Afanas'ev

Appl. Phys. Lett. 104, 061906 (2014)

https://doi.org/10.1063/1.4865100

Published: February 2014

View article titled, The origin of white luminescence from silicon oxycarbide thin films

Journal Articles

As_Ga⁺ antisites identified by electron spin resonance as a main interface defect system in thermal GaAs/native oxide structures

A. Stesmans, S. Nguyen, V. V. Afanas'ev

Appl. Phys. Lett. 103, 162111 (2013)

https://doi.org/10.1063/1.4824881

Published: October 2013

View article titled, AsGa+ antisites identified by electron spin resonance as a main interface defect system in thermal GaAs/native oxide structures

Journal Articles

High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-κ insulators (κ = 2.0-2.5)

V. V. Afanas'ev, A. P. D. Nguyen, M. Houssa, A. Stesmans, Zs. Tőkei, M. R. Baklanov

Appl. Phys. Lett. 102, 172908 (2013)

https://doi.org/10.1063/1.4801938

Published: May 2013

View article titled, High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-κ insulators (κ = 2.0-2.5)

Journal Articles

Comment on “A model for internal photoemission at high-k oxide/silicon energy barriers” [J. Appl. Phys. 112 , 064115 (2012)]

V. V. Afanas'ev

J. Appl. Phys. 113, 166101 (2013)

https://doi.org/10.1063/1.4802674

Published: April 2013

View article titled, Comment on “A model for internal photoemission at high-k oxide/silicon energy barriers” [J. Appl. Phys. 112 , 064115 (2012)]

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Topics

Variations of paramagnetic defects and dopants in geo-MoS₂ from diverse localities probed by ESR

Contact resistance at graphene/MoS₂ lateral heterostructures

Impact of VUV photons on SiO₂ and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Ferromagnetism in two-dimensional hole-doped SnO

Defect localization of metal interconnection lines in 3-dimensional through-silicon-via structures by differential scanning photocapacitance microscopy

Band alignment at interfaces of synthetic few-monolayer MoS₂ with SiO₂ from internal photoemission

ESR identification of the nitrogen acceptor in 2H-polytype synthetic MoS₂: Dopant level and activation

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al₂O₃

ESR study of p-type natural 2H-polytype MoS₂ crystals: The As acceptor activity

Intrinsic electron traps in atomic-layer deposited HfO₂ insulators

Characterization of a n+3C/n−4H SiC heterojunction diode

Publisher's Note: “Defect-induced bandgap narrowing in low-k dielectrics” [Appl. Phys. Lett. 107 , 082903 (2015)]

Defect-induced bandgap narrowing in low-k dielectrics

On the bipolar resistive-switching characteristics of Al₂O₃- and HfO₂-based memory cells operated in the soft-breakdown regime

Hydrogen interaction kinetics of Ge dangling bonds at the Si_0.25Ge_0.75/SiO₂ interface

Band alignment at interfaces of amorphous Al₂O₃ with Ge_1−xSn_x- and strained Ge-based channels

The origin of white luminescence from silicon oxycarbide thin films

As_Ga⁺ antisites identified by electron spin resonance as a main interface defect system in thermal GaAs/native oxide structures

High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-κ insulators (κ = 2.0-2.5)

Comment on “A model for internal photoemission at high-k oxide/silicon energy barriers” [J. Appl. Phys. 112 , 064115 (2012)]

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