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V. Talalaev
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Journal Articles

The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers

R. Reznik, I. Soshnikov, S. Kukushkin, A. Osipov, V. Talalaev, G. Cirlin
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2064, 040004 (2019)
https://doi.org/10.1063/1.5087683
Published: January 2019
View article titled, The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers
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Journal Articles

Enhanced non-radiative recombination in the vicinity of plasma-etched side walls of luminescing Si/Ge-quantum dot structures

J. Schilling, V. Talalaev, A. Tonkikh, B. Fuhrmann, F. Heyroth, M. Otto
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 161106 (2013)
https://doi.org/10.1063/1.4825149
Published: October 2013
View article titled, Enhanced non-radiative recombination in the vicinity of plasma-etched side walls of luminescing Si/Ge-quantum dot structures
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Journal Articles

Si nanocrystal based memories: Effect of the nanocrystal density

T. Z. Lu, M. Alexe, R. Scholz, V. Talalaev, R. J. Zhang, M. Zacharias
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 014310 (2006)
https://doi.org/10.1063/1.2214300
Published: July 2006
View article titled, Si nanocrystal based memories: Effect of the nanocrystal density
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Journal Articles

Interdot carrier transfer in asymmetric bilayer InAs ∕ GaAs quantum dot structures

Yu. I. Mazur, Zh. M. Wang, G. G. Tarasov, Min Xiao, G. J. Salamo, J. W. Tomm, V. Talalaev, H. Kissel
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 063102 (2005)
https://doi.org/10.1063/1.1861980
Published: February 2005
View article titled, Interdot carrier transfer in asymmetric bilayer InAs ∕ GaAs quantum dot structures
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Journal Articles

Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well

V. Malyarchuk, J. W. Tomm, V. Talalaev, Ch. Lienau, F. Rinner, M. Baeumler
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 346–348 (2002)
https://doi.org/10.1063/1.1492307
Published: July 2002
View article titled, Nanoscopic measurements of surface recombination velocity and diffusion length in a semiconductor quantum well
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