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Journal Articles

Publisher’s Note: “Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors” [Appl. Phys. Lett. 99, 072117 (2011)]

A. Frazzetto, F. Giannazzo, P. Fiorenza, V. Raineri, F. Roccaforte
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 259901 (2011)
https://doi.org/10.1063/1.3665121
Published: December 2011
View article titled, Publisher’s Note: “Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors” [Appl. Phys. Lett. 99, 072117 (2011)]
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Journal Articles

Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

G. Greco, P. Prystawko, M. Leszczyński, R. Lo Nigro, V. Raineri, F. Roccaforte
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 123703 (2011)
https://doi.org/10.1063/1.3669407
Published: December 2011
View article titled, Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN
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Journal Articles

Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

A. Frazzetto, F. Giannazzo, P. Fiorenza, V. Raineri, F. Roccaforte
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 072117 (2011)
https://doi.org/10.1063/1.3627186
Published: August 2011
View article titled, Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors
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Journal Articles

Erratum: Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas [Appl. Phys. Lett. 97, 132101 (2010)]

S. Sonde, F. Giannazzo, C. Vecchio, R. Yakimova, E. Rimini, V. Raineri
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 069902 (2011)
https://doi.org/10.1063/1.3554332
Published: February 2011
View article titled, Erratum: Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas [Appl. Phys. Lett. 97, 132101 (2010)]
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Journal Articles

Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas

S. Sonde, F. Giannazzo, C. Vecchio, R. Yakimova, E. Rimini, V. Raineri
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 132101 (2010)
https://doi.org/10.1063/1.3489942
Published: September 2010
View article titled, Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas
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Journal Articles

Irradiation damage in graphene on SiO 2 probed by local mobility measurements

F. Giannazzo, S. Sonde, V. Raineri, E. Rimini
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 263109 (2009)
https://doi.org/10.1063/1.3280860
Published: December 2009
View article titled, Irradiation damage in graphene on SiO 2 probed by local mobility measurements
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Journal Articles

Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation

F. Roccaforte, F. Giannazzo, F. Iucolano, C. Bongiorno, V Raineri
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 023703 (2009)
https://doi.org/10.1063/1.3174438
Published: July 2009
View article titled, Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation
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Journal Articles

Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide

S. Sonde, F. Giannazzo, V. Raineri, E. Rimini
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 868–873 (2009)
https://doi.org/10.1116/1.3081890
Published: March 2009
View article titled, Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide
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Journal Articles

Nanoscale current transport through Schottky contacts on wide bandgap semiconductors

F. Giannazzo, F. Roccaforte, F. Iucolano, V. Raineri, F. Ruffino, M. G. Grimaldi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 789–794 (2009)
https://doi.org/10.1116/1.3043453
Published: March 2009
View article titled, Nanoscale current transport through Schottky contacts on wide bandgap semiconductors
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Journal Articles

Perovskite CaCu 3 Ti 4 O 12 thin films for capacitive applications: From the growth to the nanoscopic imaging of the permittivity

P. Fiorenza, R. Lo Nigro, A. Sciuto, P. Delugas, V. Raineri, R. G. Toro, M. R. Catalano, G. Malandrino
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 061634 (2009)
https://doi.org/10.1063/1.3086198
Published: March 2009
View article titled, Perovskite CaCu 3 Ti 4 O 12 thin films for capacitive applications: From the growth to the nanoscopic imaging of the permittivity
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Journal Articles

Normal and abnormal grain growth in nanostructured gold film

F. Ruffino, M. G. Grimaldi, C. Bongiorno, F. Giannazzo, F. Roccaforte, V. Raineri, C. Spinella
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 054311 (2009)
https://doi.org/10.1063/1.3093681
Published: March 2009
View article titled, Normal and abnormal grain growth in nanostructured gold film
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Journal Articles

Kinetic mechanism of the thermal-induced self-organization of Au/Si nanodroplets on Si(100): Size and roughness evolution

F. Ruffino, A. Canino, M. G. Grimaldi, F. Giannazzo, F. Roccaforte, V Raineri
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 024310 (2008)
https://doi.org/10.1063/1.2955784
Published: July 2008
View article titled, Kinetic mechanism of the thermal-induced self-organization of Au/Si nanodroplets on Si(100): Size and roughness evolution
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Journal Articles

Role of C in the formation and kinetics of nanovoids induced by He + implantation in Si

D. D’Angelo, S. Mirabella, E. Bruno, G. Pulvirenti, A. Terrasi, G. Bisognin, M. Berti, C. Bongiorno, V. Raineri
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 023501 (2008)
https://doi.org/10.1063/1.2955707
Published: July 2008
View article titled, Role of C in the formation and kinetics of nanovoids induced by He + implantation in Si
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Journal Articles

He implantation to control B diffusion in crystalline and preamorphized Si

E. Bruno, S. Mirabella, F. Priolo, K. Kuitunen, F. Tuomisto, J. Slotte, F. Giannazzo, C. Bongiorno, V. Raineri, E. Napolitani
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 386–390 (2008)
https://doi.org/10.1116/1.2816927
Published: January 2008
View article titled, He implantation to control B diffusion in crystalline and preamorphized Si
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Journal Articles

Localization of He induced nanovoids in buried Si 1 − x Ge x thin films

D. D’Angelo, S. Mirabella, E. Bruno, A. Terrasi, C. Bongiorno, F. Giannazzo, V. Raineri, G. Bisognin, M. Berti
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 016104 (2008)
https://doi.org/10.1063/1.2826994
Published: January 2008
View article titled, Localization of He induced nanovoids in buried Si 1 − x Ge x thin films
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Journal Articles

Acceptor, compensation, and mobility profiles in multiple Al implanted 4 H ‐ Si C

F. Giannazzo, F. Roccaforte, V. Raineri
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 202104 (2007)
https://doi.org/10.1063/1.2813022
Published: November 2007
View article titled, Acceptor, compensation, and mobility profiles in multiple Al implanted 4 H ‐ Si C
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Journal Articles

Fluorine counter doping effect in B-doped Si

G. Impellizzeri, S. Mirabella, A. M. Piro, M. G. Grimaldi, F. Priolo, F. Giannazzo, V. Raineri, E. Napolitani, A. Carnera
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 132101 (2007)
https://doi.org/10.1063/1.2790373
Published: September 2007
View article titled, Fluorine counter doping effect in B-doped Si
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Journal Articles

Photocurrent gain in 4 H - Si C interdigit Schottky UV detectors with a thermally grown oxide layer

A. Sciuto, F. Roccaforte, S. Di Franco, V. Raineri, S. Billotta, G. Bonanno
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 223507 (2007)
https://doi.org/10.1063/1.2745208
Published: May 2007
View article titled, Photocurrent gain in 4 H - Si C interdigit Schottky UV detectors with a thermally grown oxide layer
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Journal Articles

Self-organization of gold nanoclusters on hexagonal SiC and Si O 2 surfaces

F. Ruffino, A. Canino, M. G. Grimaldi, F. Giannazzo, C. Bongiorno, F. Roccaforte, V. Raineri
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 064306 (2007)
https://doi.org/10.1063/1.2711151
Published: March 2007
View article titled, Self-organization of gold nanoclusters on hexagonal SiC and Si O 2 surfaces
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Journal Articles

He induced nanovoids for point-defect engineering in B-implanted crystalline Si

E. Bruno, S. Mirabella, F. Priolo, E. Napolitani, C. Bongiorno, V. Raineri
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 023515 (2007)
https://doi.org/10.1063/1.2427101
Published: January 2007
View article titled, He induced nanovoids for point-defect engineering in B-implanted crystalline Si
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