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V. Mikhelashvili
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Journal Articles

On the relationship between electrical and electro-optical characteristics in vertical cavity surface emitting lasers for chip scale Rb atomic clocks

Open Access
V. Mikhelashvili, L. Gal, I. R. Marciano, A. Willinger, G. Sery, Y. Milyutin, O. Ternyak, A. Shacham, A. Cohen, M. Orenstein, G. Eisenstein
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 143102 (2024)
https://doi.org/10.1063/5.0232558
Published: October 2024
View articletitled, On the relationship between electrical and electro-optical characteristics in vertical cavity surface emitting lasers for chip scale Rb atomic clocks
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Journal Articles

Highly accurate tuning of current–voltage characteristic shift in a photo-sensitive three terminal metal–insulator–semiconductor device

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V. Mikhelashvili, Y. Shneider, G. Eisenstein
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 074503 (2020)
https://doi.org/10.1063/5.0002126
Published: August 2020
View articletitled, Highly accurate tuning of current–voltage characteristic shift in a photo-sensitive three terminal metal–insulator–semiconductor device
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Journal Articles

Highly sensitive photo-detectors for the ultra-violet wavelength range based on a dielectric stack and a silicon on insulator substrate

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V. Mikhelashvili, Y. Shneider, A. Sherman, S. Yofis, G. Ankonina, O. Eyal, I. Khanonkin, G. Eisenstein
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 073504 (2019)
https://doi.org/10.1063/1.5074167
Published: February 2019
View articletitled, Highly sensitive photo-detectors for the ultra-violet wavelength range based on a dielectric stack and a silicon on insulator substrate
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Journal Articles

On the relationship between electrical and electro-optical characteristics of InAs/InP quantum dot lasers

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V. Mikhelashvili, O. Eyal, I. Khanonkin, S. Banyoudeh, V. Sichkovskyi, J. P. Reithmaier, G. Eisenstein
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 054501 (2018)
https://doi.org/10.1063/1.5037961
Published: August 2018
View articletitled, On the relationship between electrical and electro-optical characteristics of InAs/InP quantum dot lasers
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Journal Articles

Non-volatile memory and negative photoconductivity in a metal-insulator-semiconductor diode with embedded Co nanoparticles

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V. Mikhelashvili, G. Atiya, Y. Kauffmann, Y. Shneider, G. Ankonina, G. Zeevi, Y. Yaish, A. Capua, G. Eisenstein
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 224506 (2018)
https://doi.org/10.1063/1.5026268
Published: June 2018
View articletitled, Non-volatile memory and negative photoconductivity in a metal-insulator-semiconductor diode with embedded Co nanoparticles
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Journal Articles

Simplified parameter extraction method for single and back-to-back Schottky diodes fabricated on silicon-on-insulator substrates

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V. Mikhelashvili, R. Padmanabhan, G. Eisenstein
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 034503 (2017)
https://doi.org/10.1063/1.4994176
Published: July 2017
View articletitled, Simplified parameter extraction method for single and back-to-back Schottky diodes fabricated on silicon-on-insulator substrates
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Journal Articles

Optical control of capacitance in a metal-insulator-semiconductor diode with embedded metal nanoparticles

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V. Mikhelashvili, G. Ankonina, Y. Kauffmann, G. Atiya, W. D. Kaplan, R. Padmanabhan, G. Eisenstein
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 214504 (2017)
https://doi.org/10.1063/1.4983760
Published: June 2017
View articletitled, Optical control of capacitance in a metal-insulator-semiconductor diode with embedded metal nanoparticles
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Journal Articles

Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots

Open Access
I. Khanonkin, A. K. Mishra, O. Karni, V. Mikhelashvili, S. Banyoudeh, F. Schnabel, V. Sichkovskyi, J. P. Reithmaier, G. Eisenstein
Journal: AIP Advances
AIP Advances 7, 035122 (2017)
https://doi.org/10.1063/1.4979556
Published: March 2017
View articletitled, Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots
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Journal Articles

Negative capacitance in optically sensitive metal-insulator-semiconductor-metal structures

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V. Mikhelashvili, R. Padmanabhan, B. Meyler, S. Yofis, G. Eisenstein
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 224502 (2016)
https://doi.org/10.1063/1.4971401
Published: December 2016
View articletitled, Negative capacitance in optically sensitive metal-insulator-semiconductor-metal structures
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Journal Articles

Negative differential resistance in three terminal photodetectors

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V. Mikhelashvili, B. Meyler, S. Yofis, R. Padmanabhan, G. Eisenstein
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 253504 (2016)
https://doi.org/10.1063/1.4954699
Published: June 2016
View articletitled, Negative differential resistance in three terminal photodetectors
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Journal Articles

Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

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V. Mikhelashvili, R. Padmanabhan, B. Meyler, S. Yofis, G. Atiya, Z. Cohen-Hyams, S. Weindling, G. Ankonina, J. Salzman, W. D. Kaplan, G. Eisenstein
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 134504 (2015)
https://doi.org/10.1063/1.4932031
Published: October 2015
View articletitled, Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack
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Journal Articles

Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-on-insulator substrates

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V. Mikhelashvili, D. Cristea, B. Meyler, S. Yofis, Y. Shneider, G. Atiya, T. Cohen-Hyams, Y. Kauffmann, W. D. Kaplan, G. Eisenstein
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 044503 (2015)
https://doi.org/10.1063/1.4906971
Published: January 2015
View articletitled, Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-on-insulator substrates
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Journal Articles

Stability of quantum-dot excited-state laser emission under simultaneous ground-state perturbation

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Y. Kaptan, A. Röhm, B. Herzog, B. Lingnau, H. Schmeckebier, D. Arsenijević, V. Mikhelashvili, O. Schöps, M. Kolarczik, G. Eisenstein, D. Bimberg, U. Woggon, N. Owschimikow, K. Lüdge
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 191105 (2014)
https://doi.org/10.1063/1.4901051
Published: November 2014
View articletitled, Stability of quantum-dot excited-state laser emission under simultaneous ground-state perturbation
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Journal Articles

A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate

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V. Mikhelashvili, D. Cristea, B. Meyler, S. Yofis, Y. Shneider, G. Atiya, T. Cohen-Hyams, Y. Kauffmann, W. D. Kaplan, G. Eisenstein
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 074513 (2014)
https://doi.org/10.1063/1.4893582
Published: August 2014
View articletitled, A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate
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Journal Articles

Gain dynamics of quantum dot devices for dual-state operation

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Y. Kaptan, H. Schmeckebier, B. Herzog, D. Arsenijević, M. Kolarczik, V. Mikhelashvili, N. Owschimikow, G. Eisenstein, D. Bimberg, U. Woggon
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 261108 (2014)
https://doi.org/10.1063/1.4885383
Published: July 2014
View articletitled, Gain dynamics of quantum dot devices for dual-state operation
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Journal Articles

Comparison of dynamic properties of ground- and excited-state emission in p-doped InAs/GaAs quantum-dot lasers

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D. Arsenijević, A. Schliwa, H. Schmeckebier, M. Stubenrauch, M. Spiegelberg, D. Bimberg, V. Mikhelashvili, G. Eisenstein
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 181101 (2014)
https://doi.org/10.1063/1.4875238
Published: May 2014
View articletitled, Comparison of dynamic properties of ground- and excited-state emission in p-doped InAs/GaAs quantum-dot lasers
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Journal Articles

Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

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O. Karni, K. J. Kuchar, A. Capua, V. Mikhelashvili, G. Sęk, J. Misiewicz, V. Ivanov, J. P. Reithmaier, G. Eisenstein
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 121104 (2014)
https://doi.org/10.1063/1.4869489
Published: March 2014
View articletitled, Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers
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Journal Articles

Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

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V. Mikhelashvili, B. Meyler, Y. Shneider, S. Yofis, J. Salzman, G. Atiya, T. Cohen-Hyams, G. Ankonina, W. D. Kaplan, M. Lisiansky, Y. Roizin, G. Eisenstein
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 074503 (2013)
https://doi.org/10.1063/1.4791761
Published: February 2013
View articletitled, Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate
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Journal Articles

Non-volatile memory transistor based on Pt nanocrystals with negative differencial resistance

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V. Mikhelashvili, Y. Shneider, B. Meyler, G. Atiya, S. Yofis, T. Cohen-Hyams, W. D. Kaplan, M. Lisiansky, Y. Roizin, J. Salzman, G. Eisenstein
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 024319 (2012)
https://doi.org/10.1063/1.4739714
Published: July 2012
View articletitled, Non-volatile memory transistor based on Pt nanocrystals with negative differencial resistance
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Journal Articles

Nonvolatile low-voltage memory transistor based on SiO 2 tunneling and HfO 2 blocking layers with charge storage in Au nanocrystals

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V. Mikhelashvili, B. Meyler, S. Yofis, Y. Shneider, A. Zeidler, M. Garbrecht, T. Cohen-Hyams, W. D. Kaplan, M. Lisiansky, Y. Roizin, J. Salzman, G. Eisenstein
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 212902 (2011)
https://doi.org/10.1063/1.3595484
Published: May 2011
View articletitled, Nonvolatile low-voltage memory transistor based on SiO 2 tunneling and HfO 2 blocking layers with charge storage in Au nanocrystals
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