1-10 of 10
V. M. Robbins
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Correlation of buffer strain relaxation modes with transport properties of two‐dimensional electron gases

Available to Purchase
R. S. Goldman, K. L. Kavanagh, H. H. Wieder, V. M. Robbins, S. N. Ehrlich, R. M. Feenstra
Journal: Journal of Applied Physics
J. Appl. Phys. 80, 6849–6854 (1996)
https://doi.org/10.1063/1.363751
Published: December 1996
View articletitled, Correlation of buffer strain relaxation modes with transport properties of two‐dimensional electron gases
Open the PDF for Correlation of buffer strain relaxation modes with transport properties of two‐dimensional electron gases in another window
Journal Articles

Novel high‐yield trilayer resist process for 0.1 μm T‐gate fabrication

Available to Purchase
A. S. Wakita, C.‐Y. Su, H. Rohdin, H.‐Y. Liu, A. Lee, J. Seeger, V. M. Robbins
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 13, 2725–2728 (1995)
https://doi.org/10.1116/1.588253
Published: November 1995
View articletitled, Novel high‐yield trilayer resist process for 0.1 μm T‐gate fabrication
Open the PDF for Novel high‐yield trilayer resist process for 0.1 μm T‐gate fabrication in another window
Journal Articles

Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes

Available to Purchase
F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, M. G. Craford, V. M. Robbins
Journal: Applied Physics Letters
Appl. Phys. Lett. 64, 2839–2841 (1994)
https://doi.org/10.1063/1.111442
Published: May 1994
View articletitled, Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes
Open the PDF for Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes in another window
Journal Articles

High performance AlGaInP visible light‐emitting diodes

Available to Purchase
C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, V. M. Robbins
Journal: Applied Physics Letters
Appl. Phys. Lett. 57, 2937–2939 (1990)
https://doi.org/10.1063/1.103736
Published: December 1990
View articletitled, High performance AlGaInP visible light‐emitting diodes
Open the PDF for High performance AlGaInP visible light‐emitting diodes in another window
Journal Articles

Unusual properties of photoluminescence from partially ordered Ga0.5In0.5P

Available to Purchase
J. E. Fouquet, V. M. Robbins, S. J. Rosner, O. Blum
Journal: Applied Physics Letters
Appl. Phys. Lett. 57, 1566–1568 (1990)
https://doi.org/10.1063/1.103355
Published: October 1990
View articletitled, Unusual properties of photoluminescence from partially ordered Ga0.5In0.5P
Open the PDF for Unusual properties of photoluminescence from partially ordered Ga0.5In0.5P in another window
Journal Articles

Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures

Available to Purchase
D. G. Deppe, N. Holonyak, Jr., W. E. Plano, V. M. Robbins, J. M. Dallesasse, K. C. Hsieh, J. E. Baker
Journal: Journal of Applied Physics
J. Appl. Phys. 64, 1838–1844 (1988)
https://doi.org/10.1063/1.341759
Published: August 1988
View articletitled, Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures
Open the PDF for Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures in another window
Journal Articles

Impact ionization in AlxGa1−xAs for x=0.1–0.4

Available to Purchase
V. M. Robbins, S. C. Smith, G. E. Stillman
Journal: Applied Physics Letters
Appl. Phys. Lett. 52, 296–298 (1988)
https://doi.org/10.1063/1.99498
Published: January 1988
View articletitled, Impact ionization in AlxGa1−xAs for x=0.1–0.4
Open the PDF for Impact ionization in AlxGa1−xAs for x=0.1–0.4 in another window
Journal Articles

Electron and hole impact ionization coefficients in (100) and in (111) Si

Available to Purchase
V. M. Robbins, T. Wang, K. F. Brennan, K. Hess, G. E. Stillman
Journal: Journal of Applied Physics
J. Appl. Phys. 58, 4614–4617 (1985)
https://doi.org/10.1063/1.336229
Published: December 1985
View articletitled, Electron and hole impact ionization coefficients in (100) and in (111) Si
Open the PDF for Electron and hole impact ionization coefficients in (100) and in (111) Si in another window
Journal Articles

Subthreshold electron velocity‐field characteristics of GaAs and In0.53Ga0.47As

Available to Purchase
M. A. Haase, V. M. Robbins, N. Tabatabaie, G. E. Stillman
Journal: Journal of Applied Physics
J. Appl. Phys. 57, 2295–2298 (1985)
https://doi.org/10.1063/1.335464
Published: March 1985
View articletitled, Subthreshold electron velocity‐field characteristics of GaAs and In0.53Ga0.47As
Open the PDF for Subthreshold electron velocity‐field characteristics of GaAs and In0.53Ga0.47As in another window
Journal Articles

Impact ionization coefficients in (111) InP

Available to Purchase
N. Tabatabaie, V. M. Robbins, N. Pan, G. E. Stillman
Journal: Applied Physics Letters
Appl. Phys. Lett. 46, 182–184 (1985)
https://doi.org/10.1063/1.95676
Published: January 1985
View articletitled, Impact ionization coefficients in (111) InP
Open the PDF for Impact ionization coefficients in (111) InP in another window