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Journal Articles

Characterization of a low-pressure chlorine plasma column sustained by propagating surface waves using phase-sensitive microwave interferometry and trace-rare-gas optical emission spectroscopy

S. Mattei, O. Boudreault, R. Khare, L. Stafford, V. M. Donnelly

J. Appl. Phys. 109, 113304 (2011)

https://doi.org/10.1063/1.3574658

Published: June 2011

View article titled, Characterization of a low-pressure chlorine plasma column sustained by propagating surface waves using phase-sensitive microwave interferometry and trace-rare-gas optical emission spectroscopy

Journal Articles

Critical review: Plasma-surface reactions and the spinning wall method

V. M. Donnelly, J. Guha, L. Stafford

J. Vac. Sci. Technol. A 29, 010801 (2011)

https://doi.org/10.1116/1.3517478

Published: January 2011

View article titled, Critical review: Plasma-surface reactions and the spinning wall method

Journal Articles

Electron energy distribution functions in low-pressure oxygen plasma columns sustained by propagating surface waves

L. Stafford, R. Khare, V. M. Donnelly, J. Margot, M. Moisan

Appl. Phys. Lett. 94, 021503 (2009)

https://doi.org/10.1063/1.3072364

Published: January 2009

View article titled, Electron energy distribution functions in low-pressure oxygen plasma columns sustained by propagating surface waves

Journal Articles

Effectiveness of dilute H 2 plasmas in removing boron from Si after etching of Hf O 2 films in B Cl 3 plasmas

C. Wang, V. M. Donnelly

J. Vac. Sci. Technol. A 24, 41–44 (2006)

https://doi.org/10.1116/1.2134708

Published: December 2005

View article titled, Effectiveness of dilute H 2 plasmas in removing boron from Si after etching of Hf O 2 films in B Cl 3 plasmas

Journal Articles

Evaluation of the effectiveness of H 2 plasmas in removing boron from Si after etching of Hf O 2 films in B Cl 3 plasmas

C. Wang, V. M. Donnelly

J. Vac. Sci. Technol. B 23, 547–553 (2005)

https://doi.org/10.1116/1.1875292

Published: March 2005

View article titled, Evaluation of the effectiveness of H 2 plasmas in removing boron from Si after etching of Hf O 2 films in B Cl 3 plasmas

Journal Articles

Spatially resolved electron temperatures, species concentrations, and electron energy distributions in inductively coupled chlorine plasmas, measured by trace-rare gases optical emission spectroscopy

V. M. Donnelly, M. J. Schabel

J. Appl. Phys. 91, 6288–6295 (2002)

https://doi.org/10.1063/1.1467398

Published: May 2002

View article titled, Spatially resolved electron temperatures, species concentrations, and electron energy distributions in inductively coupled chlorine plasmas, measured by trace-rare gases optical emission spectroscopy

Journal Articles

Determination of electron temperature, atomic fluorine concentration, and gas temperature in inductively coupled fluorocarbon/rare gas plasmas using optical emission spectroscopy

M. J. Schabel, V. M. Donnelly, A. Kornblit, W. W. Tai

J. Vac. Sci. Technol. A 20, 555–563 (2002)

https://doi.org/10.1116/1.1454126

Published: March 2002

View article titled, Determination of electron temperature, atomic fluorine concentration, and gas temperature in inductively coupled fluorocarbon/rare gas plasmas using optical emission spectroscopy

Journal Articles

Diagnostics of inductively coupled chlorine plasmas: Measurement of electron and total positive ion densities

M. V. Malyshev, V. M. Donnelly

J. Appl. Phys. 90, 1130–1137 (2001)

https://doi.org/10.1063/1.1381044

Published: August 2001

View article titled, Diagnostics of inductively coupled chlorine plasmas: Measurement of electron and total positive ion densities

Journal Articles

Etching of high-k dielectric Zr 1−x Al x O y films in chlorine-containing plasmas

K. Pelhos, V. M. Donnelly, A. Kornblit, M. L. Green, R. B. Van Dover, L. Manchanda, Y. Hu, M. Morris, E. Bower

J. Vac. Sci. Technol. A 19, 1361–1366 (2001)

https://doi.org/10.1116/1.1349721

Published: July 2001

View article titled, Etching of high-<em>k</em> dielectric Zr 1−x Al x O y films in chlorine-containing plasmas

Journal Articles

Diagnostics of inductively coupled chlorine plasmas: Measurement of Cl 2 and Cl number densities

M. V. Malyshev, V. M. Donnelly

J. Appl. Phys. 88, 6207–6215 (2000)

https://doi.org/10.1063/1.1321777

Published: December 2000

View article titled, Diagnostics of inductively coupled chlorine plasmas: Measurement of Cl 2 and Cl number densities

Journal Articles

Diagnostics of inductively coupled chlorine plasmas: Measurements of the neutral gas temperature

V. M. Donnelly, M. V. Malyshev

Appl. Phys. Lett. 77, 2467–2469 (2000)

https://doi.org/10.1063/1.1318727

Published: October 2000

View article titled, Diagnostics of inductively coupled chlorine plasmas: Measurements of the neutral gas temperature

Journal Articles

Diagnostics of inductively coupled chlorine plasmas: Measurement of Cl 2 + and Cl + densities

M. V. Malyshev, N. C. M. Fuller, K. H. A. Bogart, V. M. Donnelly, Irving P. Herman

J. Appl. Phys. 88, 2246–2251 (2000)

https://doi.org/10.1063/1.1288156

Published: September 2000

View article titled, Diagnostics of inductively coupled chlorine plasmas: Measurement of Cl 2 + and Cl + densities

Journal Articles

Composition of trench sidewalls and bottoms for SiO 2 -masked Si(100) etched in Cl 2 plasmas

K. H. A. Bogart, V. M. Donnelly

J. Appl. Phys. 87, 8351–8360 (2000)

https://doi.org/10.1063/1.373547

Published: June 2000

View article titled, Composition of trench sidewalls and bottoms for SiO 2 -masked Si(100) etched in Cl 2 plasmas

Journal Articles

Diagnostic studies of aluminum etching in an inductively coupled plasma system: Determination of electron temperatures and connections to plasma-induced damage

M. V. Malyshev, V. M. Donnelly, S. W. Downey, J. I. Colonell, N. Layadi

J. Vac. Sci. Technol. A 18, 849–859 (2000)

https://doi.org/10.1116/1.582266

Published: May 2000

View article titled, Diagnostic studies of aluminum etching in an inductively coupled plasma system: Determination of electron temperatures and connections to plasma-induced damage

Journal Articles

Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy

J. P. Chang, M. L. Green, V. M. Donnelly, R. L. Opila, J. Eng, Jr., J. Sapjeta, P. J. Silverman, B. Weir, H. C. Lu, T. Gustafsson, E. Garfunkel

J. Appl. Phys. 87, 4449–4455 (2000)

https://doi.org/10.1063/1.373090

Published: May 2000

View article titled, Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy

Journal Articles

Role of sidewall scattering in feature profile evolution during Cl 2 and HBr plasma etching of silicon

M. A. Vyvoda, M. Li, D. B. Graves, H. Lee, M. V. Malyshev, F. P. Klemens, J. T. C. Lee, V. M. Donnelly

J. Vac. Sci. Technol. B 18, 820–833 (2000)

https://doi.org/10.1116/1.591282

Published: March 2000

View article titled, Role of sidewall scattering in feature profile evolution during Cl 2 and HBr plasma etching of silicon

Journal Articles

Diagnostics of chlorine inductively coupled plasmas. Measurement of electron temperatures and electron energy distribution functions

M. V. Malyshev, V. M. Donnelly

J. Appl. Phys. 87, 1642–1649 (2000)

https://doi.org/10.1063/1.372072

Published: February 2000

View article titled, Diagnostics of chlorine inductively coupled plasmas. Measurement of electron temperatures and electron energy distribution functions

Journal Articles

Mask charging and profile evolution during chlorine plasma etching of silicon

K. H. A. Bogart, F. P. Klemens, M. V. Malyshev, J. I. Colonell, V. M. Donnelly, J. T. C. Lee, J. M. Lane

J. Vac. Sci. Technol. A 18, 197–206 (2000)

https://doi.org/10.1116/1.582157

Published: January 2000

View article titled, Mask charging and profile evolution during chlorine plasma etching of silicon

Journal Articles

Dynamics of pulsed-power chlorine plasmas

M. V. Malyshev, V. M. Donnelly, J. I. Colonell, S. Samukawa

J. Appl. Phys. 86, 4813–4820 (1999)

https://doi.org/10.1063/1.371447

Published: November 1999

View article titled, Dynamics of pulsed-power chlorine plasmas

Journal Articles

On the constant composition and thickness of the chlorinated silicon surface layer subjected to increasing etching product concentrations during chlorine plasma etching

K. H. A. Bogart, V. M. Donnelly

J. Appl. Phys. 86, 1822–1833 (1999)

https://doi.org/10.1063/1.370975

Published: August 1999

View article titled, On the constant composition and thickness of the chlorinated silicon surface layer subjected to increasing etching product concentrations during chlorine plasma etching

NARROW

Topics

Characterization of a low-pressure chlorine plasma column sustained by propagating surface waves using phase-sensitive microwave interferometry and trace-rare-gas optical emission spectroscopy

Critical review: Plasma-surface reactions and the spinning wall method

Electron energy distribution functions in low-pressure oxygen plasma columns sustained by propagating surface waves

Effectiveness of dilute H 2 plasmas in removing boron from Si after etching of Hf O 2 films in B Cl 3 plasmas

Evaluation of the effectiveness of H 2 plasmas in removing boron from Si after etching of Hf O 2 films in B Cl 3 plasmas

Spatially resolved electron temperatures, species concentrations, and electron energy distributions in inductively coupled chlorine plasmas, measured by trace-rare gases optical emission spectroscopy

Determination of electron temperature, atomic fluorine concentration, and gas temperature in inductively coupled fluorocarbon/rare gas plasmas using optical emission spectroscopy

Diagnostics of inductively coupled chlorine plasmas: Measurement of electron and total positive ion densities

Etching of high-k dielectric Zr 1−x Al x O y films in chlorine-containing plasmas

Diagnostics of inductively coupled chlorine plasmas: Measurement of Cl 2 and Cl number densities

Diagnostics of inductively coupled chlorine plasmas: Measurements of the neutral gas temperature

Diagnostics of inductively coupled chlorine plasmas: Measurement of Cl 2 + and Cl + densities

Composition of trench sidewalls and bottoms for SiO 2 -masked Si(100) etched in Cl 2 plasmas

Diagnostic studies of aluminum etching in an inductively coupled plasma system: Determination of electron temperatures and connections to plasma-induced damage

Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy

Role of sidewall scattering in feature profile evolution during Cl 2 and HBr plasma etching of silicon

Diagnostics of chlorine inductively coupled plasmas. Measurement of electron temperatures and electron energy distribution functions

Mask charging and profile evolution during chlorine plasma etching of silicon

Dynamics of pulsed-power chlorine plasmas

On the constant composition and thickness of the chlorinated silicon surface layer subjected to increasing etching product concentrations during chlorine plasma etching

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