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Journal Articles

Formation of nanovoids in high-dose hydrogen implanted GaN

I. Radu, R. Singh, R. Scholz, U. Gösele, S. Christiansen, G. Brüderl, C. Eichler, V. Härle

Appl. Phys. Lett. 89, 031912 (2006)

https://doi.org/10.1063/1.2221526

Published: July 2006

View article titled, Formation of nanovoids in high-dose hydrogen implanted GaN

Journal Articles

Microscopic analysis of optical gain in In Ga N ∕ Ga N quantum wells

B. Witzigmann, V. Laino, M. Luisier, U. T. Schwarz, G. Feicht, W. Wegscheider, K. Engl, M. Furitsch, A. Leber, A. Lell, V. Härle

Appl. Phys. Lett. 88, 021104 (2006)

https://doi.org/10.1063/1.2164907

Published: January 2006

View article titled, Microscopic analysis of optical gain in In Ga N ∕ Ga N quantum wells

Journal Articles

Local strain and potential distribution induced by single dislocations in GaN

N. Gmeinwieser, P. Gottfriedsen, U. T. Schwarz, W. Wegscheider, R. Clos, A. Krtschil, A. Krost, A. Weimar, G. Brüderl, A. Lell, V. Härle

J. Appl. Phys. 98, 116102 (2005)

https://doi.org/10.1063/1.2137879

Published: December 2005

View article titled, Local strain and potential distribution induced by single dislocations in GaN

Journal Articles

Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates

N. Gmeinwieser, K. Engl, P. Gottfriedsen, U. T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, H.-J. Lugauer, A. Leber, A. Weimar, A. Lell, V. Härle

J. Appl. Phys. 96, 3666–3672 (2004)

https://doi.org/10.1063/1.1784617

Published: October 2004

View article titled, Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates

Journal Articles

Excitonic signature in gain and carrier induced change of refractive index spectra of ( In , Al ) GaN quantum well lasers

Ulrich T. Schwarz, E. Sturm, W. Wegscheider, V. Kümmler, A. Lell, V. Härle

Appl. Phys. Lett. 85, 1475–1477 (2004)

https://doi.org/10.1063/1.1789243

Published: August 2004

View article titled, Excitonic signature in gain and carrier induced change of refractive index spectra of ( In , Al ) GaN quantum well lasers

Journal Articles

Gradual facet degradation of (Al,In)GaN quantum well lasers

V. Kümmler, A. Lell, V. Härle, U. T. Schwarz, T. Schoedl, W. Wegscheider

Appl. Phys. Lett. 84, 2989–2991 (2004)

https://doi.org/10.1063/1.1704861

Published: April 2004

View article titled, Gradual facet degradation of (Al,In)GaN quantum well lasers

Journal Articles

Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers

U. T. Schwarz, E. Sturm, W. Wegscheider, V. Kümmler, A. Lell, V. Härle

Appl. Phys. Lett. 83, 4095–4097 (2003)

https://doi.org/10.1063/1.1628825

Published: November 2003

View article titled, Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers

Journal Articles

High-resolution near-field spectroscopy investigation of GaN laterally overgrown structures on SiC

F. Hitzel, A. Hangleiter, S. Miller, A. Weimar, G. Brüderl, A. Lell, V. Härle

Appl. Phys. Lett. 82, 4071–4073 (2003)

https://doi.org/10.1063/1.1580997

Published: June 2003

View article titled, High-resolution near-field spectroscopy investigation of GaN laterally overgrown structures on SiC

Journal Articles

Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures

M. Vehse, P. Michler, I. Gösling, M. Röwe, J. Gutowski, S. Bader, A. Lell, G. Brüderl, V. Härle

Appl. Phys. Lett. 80, 755–757 (2002)

https://doi.org/10.1063/1.1434305

Published: February 2002

View article titled, Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures

Journal Articles

Temperature dependence of stresses in GaN thin films grown on (0001) sapphire: Modeling of thermal stresses

J. Keckes, J. W. Gerlach, R. Averbeck, H. Riechert, S. Bader, B. Hahn, H.-J. Lugauer, A. Lell, V. Härle, A. Wenzel, B. Rauschenbach

Appl. Phys. Lett. 79, 4307–4309 (2001)

https://doi.org/10.1063/1.1427424

Published: December 2001

View article titled, Temperature dependence of stresses in GaN thin films grown on (0001) sapphire: Modeling of thermal stresses

Journal Articles

Optical gain and saturation in nitride-based laser structures

M. Vehse, P. Michler, O. Lange, M. Röwe, J. Gutowski, S. Bader, H.-J. Lugauer, G. Brüderl, A. Weimar, A. Lell, V. Härle

Appl. Phys. Lett. 79, 1763–1765 (2001)

https://doi.org/10.1063/1.1401780

Published: September 2001

View article titled, Optical gain and saturation in nitride-based laser structures

Journal Articles

Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN

J. S. Im, A. Moritz, F. Steuber, V. Härle, F. Scholz, A. Hangleiter

Appl. Phys. Lett. 70, 631–633 (1997)

https://doi.org/10.1063/1.118293

Published: February 1997

View article titled, Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN

Journal Articles

A mechanism for low‐power all‐optical switching in multiple‐quantum‐well structures

C. Knorr, U. Wilhelm, V. Härle, D. Ottenwälder, F. Scholz, A. Hangleiter

Appl. Phys. Lett. 69, 4212–4214 (1996)

https://doi.org/10.1063/1.116989

Published: December 1996

View article titled, A mechanism for low‐power all‐optical switching in multiple‐quantum‐well structures

Journal Articles

Deep‐level defects and n‐type‐carrier concentration in nitrogen implanted GaN

D. Haase, M. Schmid, W. Kürner, A. Dörnen, V. Härle, F. Scholz, M. Burkard, H. Schweizer

Appl. Phys. Lett. 69, 2525–2527 (1996)

https://doi.org/10.1063/1.117727

Published: October 1996

View article titled, Deep‐level defects and <em>n</em>‐type‐carrier concentration in nitrogen implanted GaN

Journal Articles

Realization of optically pumped second‐order GaInN‐distributed‐feedback lasers

R. Hofmann, H.‐P. Gauggel, U. A. Griesinger, H. Gräbeldinger, F. Adler, P. Ernst, H. Bolay, V. Härle, F. Scholz, H. Schweizer, M. H. Pilkuhn

Appl. Phys. Lett. 69, 2068–2070 (1996)

https://doi.org/10.1063/1.116882

Published: September 1996

View article titled, Realization of optically pumped second‐order GaInN‐distributed‐feedback lasers

Journal Articles

Mechanisms of recombination in GaN photodetectors

F. Binet, J. Y. Duboz, E. Rosencher, F. Scholz, V. Härle

Appl. Phys. Lett. 69, 1202–1204 (1996)

https://doi.org/10.1063/1.117411

Published: August 1996

View article titled, Mechanisms of recombination in GaN photodetectors

Journal Articles

Size effect upon emission dynamics of 1.5 μm quasi‐quantum wire distributed feedback semiconductor lasers

Jian Wang, Uwe A. Griesinger, Frank Adler, Heinz Schweizer, V. Härle, F. Scholz

Appl. Phys. Lett. 69, 287–289 (1996)

https://doi.org/10.1063/1.118035

Published: July 1996

View article titled, Size effect upon emission dynamics of 1.5 μm quasi‐quantum wire distributed feedback semiconductor lasers

Journal Articles

Optical gain in GaInN/GaN heterostructures

G. Frankowsky, F. Steuber, V. Härle, F. Scholz, A. Hangleiter

Appl. Phys. Lett. 68, 3746–3748 (1996)

https://doi.org/10.1063/1.115993

Published: June 1996

View article titled, Optical gain in GaInN/GaN heterostructures

Journal Articles

Waveguiding in (quantum) wire structures: Impact on the polarization characteristics and the slope of the optical gain

G. Lehr, V. Härle, F. Scholz, H. Schweizer

Appl. Phys. Lett. 68, 2326–2328 (1996)

https://doi.org/10.1063/1.115846

Published: April 1996

View article titled, Waveguiding in (quantum) wire structures: Impact on the polarization characteristics and the slope of the optical gain

Journal Articles

Magnetotransport in periodically modulated quantum wires

R. Bergmann, H. Schweizer, V. Härle, F. Scholz

Appl. Phys. Lett. 68, 2267–2269 (1996)

https://doi.org/10.1063/1.115880

Published: April 1996

View article titled, Magnetotransport in periodically modulated quantum wires

NARROW

Topics

Formation of nanovoids in high-dose hydrogen implanted GaN

Microscopic analysis of optical gain in In Ga N ∕ Ga N quantum wells

Local strain and potential distribution induced by single dislocations in GaN

Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates

Excitonic signature in gain and carrier induced change of refractive index spectra of ( In , Al ) GaN quantum well lasers

Gradual facet degradation of (Al,In)GaN quantum well lasers

Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers

High-resolution near-field spectroscopy investigation of GaN laterally overgrown structures on SiC

Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures

Temperature dependence of stresses in GaN thin films grown on (0001) sapphire: Modeling of thermal stresses

Optical gain and saturation in nitride-based laser structures

Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN

A mechanism for low‐power all‐optical switching in multiple‐quantum‐well structures

Deep‐level defects and n‐type‐carrier concentration in nitrogen implanted GaN

Realization of optically pumped second‐order GaInN‐distributed‐feedback lasers

Mechanisms of recombination in GaN photodetectors

Size effect upon emission dynamics of 1.5 μm quasi‐quantum wire distributed feedback semiconductor lasers

Optical gain in GaInN/GaN heterostructures

Waveguiding in (quantum) wire structures: Impact on the polarization characteristics and the slope of the optical gain

Magnetotransport in periodically modulated quantum wires

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