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Journal Articles

All-dielectric grating-assisted absorption enhancement in a subwavelength mercury cadmium telluride layer for infrared photodetectors

Md. Sojib, R. Sayeed, V. Avrutin, Ü. Özgür, N. K. Dhar
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 153101 (2024)
https://doi.org/10.1063/5.0196982
Published: April 2024
View article titled, All-dielectric grating-assisted absorption enhancement in a subwavelength mercury cadmium telluride layer for infrared photodetectors
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Journal Articles

Border collision bifurcation of a resonant closed invariant curve

Zh. T. Zhusubaliyev, V. Avrutin, I. Sushko, L. Gardini
Journal: Chaos: An Interdisciplinary Journal of Nonlinear Science
Chaos 32, 043101 (2022)
https://doi.org/10.1063/5.0086419
Published: April 2022
View article titled, Border collision bifurcation of a resonant closed invariant curve
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Journal Articles

Deterministic modeling of hybrid nonlinear effects in epsilon-near-zero thin films

R. Secondo, A. Ball, B. Diroll, D. Fomra, K. Ding, V. Avrutin, Ü. Özgür, D. O. Demchenko, J. B. Khurgin, N. Kinsey
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 031103 (2022)
https://doi.org/10.1063/5.0077116
Published: January 2022
View article titled, Deterministic modeling of hybrid nonlinear effects in epsilon-near-zero thin films
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Journal Articles

Self-formation of high-field domain in epitaxial ZnO and its suppression in ZnO/MgZnO heterostructure

E. Šermukšnis, J. Liberis, A. Šimukovič, A. Matulionis, K. Ding, V. Avrutin, Ü. Özgür, H. Morkoç
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 252102 (2021)
https://doi.org/10.1063/5.0053520
Published: June 2021
View article titled, Self-formation of high-field domain in epitaxial ZnO and its suppression in ZnO/MgZnO heterostructure
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Journal Articles

Terahertz oscillations in gallium nitride quantum-well channels predicted by hot-electron noise temperature behavior at microwave frequency

M. Ramonas, J. Liberis, A. Šimukovič, E. Šermukšnis, A. Matulionis, V. Avrutin, Ü. Özgür, H. Morkoç
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 055702 (2020)
https://doi.org/10.1063/5.0015257
Published: August 2020
View article titled, Terahertz oscillations in gallium nitride quantum-well channels predicted by hot-electron noise temperature behavior at microwave frequency
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Journal Articles

Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation

L. Ardaravičius, O. Kiprijanovič, M. Ramonas, E. Šermukšnis, J. Liberis, A. Šimukovič, A. Matulionis, Md. B. Ullah, K. Ding, V. Avrutin, Ü. Özgür, H. Morkoç
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 185703 (2019)
https://doi.org/10.1063/1.5100078
Published: November 2019
View article titled, Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation
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Journal Articles

Hot LO-phonon limited electron transport in ZnO/MgZnO channels

E. Šermukšnis, J. Liberis, A. Matulionis, V. Avrutin, M. Toporkov, Ü. Özgür, H. Morkoç
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 175702 (2018)
https://doi.org/10.1063/1.5022463
Published: May 2018
View article titled, Hot LO-phonon limited electron transport in ZnO/MgZnO channels
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Journal Articles

Investigation of high density two-dimensional electron gas in Zn-polar BeMgZnO/ZnO heterostructures

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K. Ding, M. B. Ullah, V. Avrutin, Ü. Özgür, H. Morkoç
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 182101 (2017)
https://doi.org/10.1063/1.4993853
Published: November 2017
View article titled, Investigation of high density two-dimensional electron gas in Zn-polar BeMgZnO/ZnO heterostructures
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Journal Articles

Thermal quenching of the yellow luminescence in GaN

M. A. Reshchikov, N. M. Albarakati, M. Monavarian, V. Avrutin, H. Morkoç
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 161520 (2018)
https://doi.org/10.1063/1.4995275
Published: October 2017
View article titled, Thermal quenching of the yellow luminescence in GaN
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Journal Articles

Growth kinetics of O-polar BexMgyZn1-x-yO alloy: Role of Zn to Be and Mg flux ratio as a guide to growth at high temperature

M. B. Ullah, V. Avrutin, T. Nakagawara, S. Hafiz, I. Altuntaş, Ü. Özgür, H. Morkoç
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 185704 (2017)
https://doi.org/10.1063/1.4983096
Published: May 2017
View article titled, Growth kinetics of O-polar Be<sub>x</sub>Mg<sub>y</sub>Zn<sub>1-x-y</sub>O alloy: Role of Zn to Be and Mg flux ratio as a guide to growth at high temperature
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Journal Articles

Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory

M. Toporkov, D. O. Demchenko, Z. Zolnai, J. Volk, V. Avrutin, H. Morkoç, Ü. Özgür
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 095311 (2016)
https://doi.org/10.1063/1.4942835
Published: March 2016
View article titled, Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory
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Journal Articles

Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

F. Zhang, N. Can, S. Hafiz, M. Monavarian, S. Das, V. Avrutin, Ü. Özgür, H. Morkoç
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 181105 (2015)
https://doi.org/10.1063/1.4919917
Published: May 2015
View article titled, Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers
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Journal Articles

Hot-electron energy relaxation time in Ga-doped ZnO films

E. Šermukšnis, J. Liberis, M. Ramonas, A. Matulionis, M. Toporkov, H. Y. Liu, V. Avrutin, Ü. Özgür, H. Morkoç
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 065704 (2015)
https://doi.org/10.1063/1.4907907
Published: February 2015
View article titled, Hot-electron energy relaxation time in Ga-doped ZnO films
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Journal Articles

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, N. Izyumskaya, M. Monavarian, F. Zhang, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 093517 (2014)
https://doi.org/10.1063/1.4894513
Published: September 2014
View article titled, Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells
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Journal Articles

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, J. H. Leach
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 073510 (2014)
https://doi.org/10.1063/1.4865959
Published: February 2014
View article titled, Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells
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Journal Articles

Properties of the main Mg-related acceptors in GaN from optical and structural studies

B. Monemar, P. P. Paskov, G. Pozina, C. Hemmingsson, J. P. Bergman, S. Khromov, V. N. Izyumskaya, V. Avrutin, X. Li, H. Morkoç, H. Amano, M. Iwaya, I. Akasaki
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 053507 (2014)
https://doi.org/10.1063/1.4862928
Published: February 2014
View article titled, Properties of the main Mg-related acceptors in GaN from optical and structural studies
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Journal Articles

Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar ( 1 1 ¯ 01 ) GaN revealed from spatially resolved luminescence

S. Okur, S. Metzner, N. Izyumskaya, F. Zhang, V. Avrutin, C. Karbaum, F. Bertram, J. Christen, H. Morkoç, Ü. Özgür
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 211908 (2013)
https://doi.org/10.1063/1.4826579
Published: November 2013
View article titled, Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar ( 1 1 ¯ 01 ) GaN revealed from spatially resolved luminescence
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Journal Articles

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

S. Khromov, B. Monemar, V. Avrutin, H. Morkoç, L. Hultman, G. Pozina
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 192101 (2013)
https://doi.org/10.1063/1.4828820
Published: November 2013
View article titled, Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN
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Journal Articles

Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature

C. Y. Zhu, F. Zhang, R. A. Ferreyra, V. Avrutin, Ü. Özgür, H. Morkoç
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 163504 (2013)
https://doi.org/10.1063/1.4826324
Published: October 2013
View article titled, Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature
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Journal Articles

Optical studies of strain and defect distribution in semipolar ( 1 1 ¯ 01 ) GaN on patterned Si substrates

N. Izyumskaya, F. Zhang, S. Okur, T. Selden, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 113502 (2013)
https://doi.org/10.1063/1.4821343
Published: September 2013
View article titled, Optical studies of strain and defect distribution in semipolar ( 1 1 ¯ 01 ) GaN on patterned Si substrates
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