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Journal Articles

Radiation resilience of β-Ga2O3 Schottky barrier diodes under high dose gamma radiation

Saleh Ahmed Khan, Sudipto Saha, Uttam Singisetti, A. F. M. Anhar Uddin Bhuiyan
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 225701 (2024)
https://doi.org/10.1063/5.0233995
Published: December 2024
View article titled, Radiation resilience of β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes under high dose gamma radiation
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Journal Articles

Effective phonon dispersion and low field transport in AlxGa1−xN alloys using supercells: An ab initio approach

Animesh Datta, Ankit Sharma, Matinehsadat Hosseinigheidari, Uttam Singisetti
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 195701 (2024)
https://doi.org/10.1063/5.0230738
Published: November 2024
View article titled, Effective phonon dispersion and low field transport in Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>N alloys using supercells: An <em>ab initio</em> approach
Open the PDF for Effective phonon dispersion and low field transport in Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>N alloys using supercells: An <em>ab initio</em> approach in another window
Journal Articles

Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods

Hemant Ghadi, Evan Cornuelle, Joe F. Mcglone, Alexander Senckowski, Shivam Sharma, Man Hoi Wong, Uttam Singisetti, Steven A. Ringel
Journal: APL Materials
APL Mater. 12, 091111 (2024)
https://doi.org/10.1063/5.0225570
Published: September 2024
View article titled, Comprehensive characterization of nitrogen-related defect states in β-Ga<sub>2</sub>O<sub>3</sub> using quantitative optical and thermal defect spectroscopy methods
Open the PDF for Comprehensive characterization of nitrogen-related defect states in β-Ga<sub>2</sub>O<sub>3</sub> using quantitative optical and thermal defect spectroscopy methods in another window
Journal Articles

Thin channel Ga2O3 MOSFET with 55 GHz fMAX and > 100 V breakdown

Chinmoy Nath Saha, Abhishek Vaidya, Noor Jahan Nipu, Lingyu Meng, Dong Su Yu, Hongping Zhao, Uttam Singisetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 062101 (2024)
https://doi.org/10.1063/5.0208580
Published: August 2024
View article titled, Thin channel Ga<sub>2</sub>O<sub>3</sub> MOSFET with 55 GHz f<sub>MAX</sub> and &gt; 100 V breakdown
Open the PDF for Thin channel Ga<sub>2</sub>O<sub>3</sub> MOSFET with 55 GHz f<sub>MAX</sub> and > 100 V breakdown in another window
Journal Articles

High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes

Sudipto Saha, Lingyu Meng, Dong Su Yu, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Uttam Singisetti
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 042705 (2024)
https://doi.org/10.1116/6.0003533
Published: July 2024
View article titled, High growth rate metal organic chemical vapor deposition grown Ga<sub>2</sub>O<sub>3</sub> (010) Schottky diodes
Open the PDF for High growth rate metal organic chemical vapor deposition grown Ga<sub>2</sub>O<sub>3</sub> (010) Schottky diodes in another window
Journal Articles

Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies

Hemant Ghadi, Joe F. McGlone, Evan Cornuelle, Alexander Senckowski, Shivam Sharma, Man Hoi Wong, Uttam Singisetti, Ymir Kalmann Frodason, Hartwin Peelaers, John L. Lyons, Joel B. Varley, Chris G. Van de Walle, Aaron Arehart, Steven A. Ringel
Journal: APL Materials
APL Mater. 11, 111110 (2023)
https://doi.org/10.1063/5.0160541
Published: November 2023
View article titled, Identification and characterization of deep nitrogen acceptors in β-Ga<sub>2</sub>O<sub>3</sub> using defect spectroscopies
Open the PDF for Identification and characterization of deep nitrogen acceptors in β-Ga<sub>2</sub>O<sub>3</sub> using defect spectroscopies in another window
Journal Articles

Electrical characteristics of in situ Mg-doped β-Ga2O3 current-blocking layer for vertical devices

Sudipto Saha, Lingyu Meng, A. F. M. Anhar Uddin Bhuiyan, Ankit Sharma, Chinmoy Nath Saha, Hongping Zhao, Uttam Singisetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 132105 (2023)
https://doi.org/10.1063/5.0155882
Published: September 2023
View article titled, Electrical characteristics of <em>in situ</em> Mg-doped β-Ga<sub>2</sub>O<sub>3</sub> current-blocking layer for vertical devices
Open the PDF for Electrical characteristics of <em>in situ</em> Mg-doped β-Ga<sub>2</sub>O<sub>3</sub> current-blocking layer for vertical devices in another window
Includes: Supplementary data
Journal Articles

Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3

Hsien-Lien Huang, Christopher Chae, Jared M. Johnson, Alexander Senckowski, Shivam Sharma, Uttam Singisetti, Man Hoi Wong, Jinwoo Hwang
Journal: APL Materials
APL Mater. 11, 061113 (2023)
https://doi.org/10.1063/5.0134467
Published: June 2023
View article titled, Atomic scale defect formation and phase transformation in Si implanted <em>β</em>-Ga<sub>2</sub>O<sub>3</sub>
Open the PDF for Atomic scale defect formation and phase transformation in Si implanted <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> in another window
Includes: Supplementary data
Journal Articles

Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX

Chinmoy Nath Saha, Abhishek Vaidya, A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Shivam Sharma, Hongping Zhao, Uttam Singisetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 182106 (2023)
https://doi.org/10.1063/5.0149062
Published: May 2023
View article titled, Scaled β-Ga<sub>2</sub>O<sub>3</sub> thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz f<sub>MAX</sub>
Open the PDF for Scaled β-Ga<sub>2</sub>O<sub>3</sub> thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz f<sub>MAX</sub> in another window
Includes: Supplementary data
Book Chapter

Electron Transport in β-Ga2O3 from First-Principles

Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_007
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
Open the PDF for Electron Transport in β-Ga<sub>2</sub>O<sub>3</sub> from First-Principles in another window
Journal Articles

Effective electronic band structure of monoclinic β − ( A l x G a 1 − x ) 2 O 3 alloy semiconductor

Featured
Ankit Sharma, Uttam Singisetti
Journal: AIP Advances
AIP Advances 13, 015101 (2023)
https://doi.org/10.1063/5.0134155
Published: January 2023
View article titled, Effective electronic band structure of monoclinic β − ( A l x G a 1 − x ) 2 O 3 alloy semiconductor
Open the PDF for Effective electronic band structure of monoclinic β − ( A l x G a 1 − x ) 2 O 3 alloy semiconductor in another window
Includes: Supplementary data
Journal Articles

Full-band Monte Carlo simulation of two-dimensional electron gas in (AlxGa1−x)2O3/Ga2O3 heterostructures

Avinash Kumar, Uttam Singisetti
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 205701 (2022)
https://doi.org/10.1063/5.0109577
Published: November 2022
View article titled, Full-band Monte Carlo simulation of two-dimensional electron gas in (Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> heterostructures
Open the PDF for Full-band Monte Carlo simulation of two-dimensional electron gas in (Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> heterostructures in another window
Includes: Supplementary data
Journal Articles

Self-heating in ultra-wide bandgap n-type SrSnO3 thin films

Prafful Golani, Chinmoy Nath Saha, Prakash P. Sundaram, Fengdeng Liu, Tristan K. Truttmann, V. R. Saran Kumar Chaganti, Bharat Jalan, Uttam Singisetti, Steven J. Koester
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 162102 (2022)
https://doi.org/10.1063/5.0105962
Published: October 2022
View article titled, Self-heating in ultra-wide bandgap n-type SrSnO<sub>3</sub> thin films
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Includes: Supplementary data
Journal Articles

Temperature dependent pulsed IV and RF characterization of β-(AlxGa1−x)2O3/Ga2O3 hetero-structure FET with ex situ passivation

Chinmoy Nath Saha, Abhishek Vaidya, Uttam Singisetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 172102 (2022)
https://doi.org/10.1063/5.0083657
Published: April 2022
View article titled, Temperature dependent pulsed IV and RF characterization of <em>β</em>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> hetero-structure FET with <em>ex situ</em> passivation
Open the PDF for Temperature dependent pulsed IV and RF characterization of <em>β</em>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> hetero-structure FET with <em>ex situ</em> passivation in another window
Includes: Supplementary data
Journal Articles

Schottky diode characteristics on high-growth rate LPCVD β -Ga2O3 films on (010) and (001) Ga2O3 substrates

Sudipto Saha, Lingyu Meng, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Uttam Singisetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 122106 (2022)
https://doi.org/10.1063/5.0083659
Published: March 2022
View article titled, Schottky diode characteristics on high-growth rate LPCVD <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> films on (010) and (001) Ga<sub>2</sub>O<sub>3</sub> substrates
Open the PDF for Schottky diode characteristics on high-growth rate LPCVD <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> films on (010) and (001) Ga<sub>2</sub>O<sub>3</sub> substrates in another window
Includes: Supplementary data
Journal Articles

β-Gallium oxide power electronics

Featured
Andrew J. Green, James Speck, Grace Xing, Peter Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue, Vivek Mehrotra, Akito Kuramata, Kohei Sasaki, Shinya Watanabe, Kimiyoshi Koshi, John Blevins, Oliver Bierwagen, Sriram Krishnamoorthy, Kevin Leedy, Aaron R. Arehart, Adam T. Neal, Shin Mou, Steven A. Ringel, Avinash Kumar, Ankit Sharma, Krishnendu Ghosh, Uttam Singisetti, Wenshen Li, Kelson Chabak, Kyle Liddy, Ahmad Islam, Siddharth Rajan, Samuel Graham, Sukwon Choi, Zhe Cheng, Masataka Higashiwaki
Journal: APL Materials
APL Mater. 10, 029201 (2022)
https://doi.org/10.1063/5.0060327
Published: February 2022
View article titled, β-Gallium oxide power electronics
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Journal Articles

Erratum: “Low field transport calculation of 2-dimensional electron gas in β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3 heterostructures” [J. Appl. Phys. 128, 105703 (2020)]

Avinash Kumar, Krishnendu Ghosh, Uttam Singisetti
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 109901 (2021)
https://doi.org/10.1063/5.0048135
Published: March 2021
View article titled, Erratum: “Low field transport calculation of 2-dimensional electron gas in β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3 heterostructures” [J. Appl. Phys. 128, 105703 (2020)]
Open the PDF for Erratum: “Low field transport calculation of 2-dimensional electron gas in β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3 heterostructures” [J. Appl. Phys. 128, 105703 (2020)] in another window
Journal Articles

Low field electron transport in α − G a 2 O 3 : An ab initio approach

Ankit Sharma, Uttam Singisetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 032101 (2021)
https://doi.org/10.1063/5.0027787
Published: January 2021
View article titled, Low field electron transport in α − G a 2 O 3 : An <em>ab initio</em> approach
Open the PDF for Low field electron transport in α − G a 2 O 3 : An <em>ab initio</em> approach in another window
Includes: Supplementary data
Journal Articles

First principles study of thermoelectric properties of β -gallium oxide

Avinash Kumar, Uttam Singisetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 262104 (2020)
https://doi.org/10.1063/5.0027791
Published: December 2020
View article titled, First principles study of thermoelectric properties of <em>β</em> -gallium oxide
Open the PDF for First principles study of thermoelectric properties of <em>β</em> -gallium oxide in another window
Includes: Supplementary data
Journal Articles

Low field transport calculation of 2-dimensional electron gas in β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3 heterostructures

Avinash Kumar, Krishnendu Ghosh, Uttam Singisetti
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 105703 (2020)
https://doi.org/10.1063/5.0008578
Published: September 2020
View article titled, Low field transport calculation of 2-dimensional electron gas in β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3 heterostructures
Open the PDF for Low field transport calculation of 2-dimensional electron gas in β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3 heterostructures in another window
Includes: Supplementary data