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Journal Articles

Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes

Matthew S. Wong, Tanay Tak, Andrea Y. Ni, Kent Nitta, Srinivas Gandrothula, JaeKwon Kim, NamGoo Cha, Umesh K. Mishra, James S. Speck, Steven P. DenBaars

Appl. Phys. Lett. 126, 043506 (2025)

https://doi.org/10.1063/5.0250282

Published: January 2025

View articletitled, Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes

Journal Articles

Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges

Matthew S. Wong, Aditya Raj, Hsun-Ming Chang, Vincent Rienzi, Feng Wu, Jacob J. Ewing, Emily S. Trageser, Stephen Gee, Nathan C. Palmquist, Philip Chan, Ji Hun Kang, James S. Speck, Umesh K. Mishra, Shuji Nakamura, Steven P. DenBaars

AIP Advances 13, 015107 (2023)

https://doi.org/10.1063/5.0131142

Published: January 2023

View articletitled, Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges

Journal Articles

Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices

Athith Krishna, Aditya Raj, Nirupam Hatui, Stacia Keller, Steven Denbaars, Umesh K Mishra

Appl. Phys. Lett. 120, 132104 (2022)

https://doi.org/10.1063/5.0083790

Published: March 2022

View articletitled, Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices

Journal Articles

Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE

Brian Romanczyk, Matthew Guidry, Xun Zheng, Pawana Shrestha, Haoran Li, Elaheh Ahmadi, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 119, 072105 (2021)

https://doi.org/10.1063/5.0058587

Published: August 2021

View articletitled, Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE

Journal Articles

A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods

Wenjian Liu, Islam Sayed, Jana Georgieva, Silvia Chan, Stacia Keller, Umesh K. Mishra

J. Appl. Phys. 128, 074101 (2020)

https://doi.org/10.1063/5.0012289

Published: August 2020

View articletitled, A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods

Journal Articles

Color-tunable < 10 μ m square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates

Shubhra S. Pasayat, Ryan Ley, Chirag Gupta, Matthew S. Wong, Cheyenne Lynsky, Yifan Wang, Michael J. Gordon, Shuji Nakamura, Steven P. Denbaars, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 117, 061105 (2020)

https://doi.org/10.1063/5.0011203

Published: August 2020

View articletitled, Color-tunable < 10 μ m square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates

Journal Articles

Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN

Shubhra S. Pasayat, Nirupam Hatui, Weiyi Li, Chirag Gupta, Shuji Nakamura, Steven P. Denbaars, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 117, 062102 (2020)

https://doi.org/10.1063/5.0017948

Published: August 2020

View articletitled, Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN

Journal Articles

Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors

Athith Krishna, Aditya Raj, Nirupam Hatui, Islam Sayed, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 117, 042104 (2020)

https://doi.org/10.1063/5.0015290

Published: July 2020

View articletitled, Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors

Journal Articles

Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates

Shubhra S. Pasayat, Chirag Gupta, Matthew S. Wong, Yifan Wang, Shuji Nakamura, Steven P. Denbaars, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 116, 111101 (2020)

https://doi.org/10.1063/5.0001480

Published: March 2020

View articletitled, Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates

Journal Articles

Investigation of nitrogen polar p-type doped GaN/Al_xGa_(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors

Athith Krishna, Aditya Raj, Nirupam Hatui, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 115, 172105 (2019)

https://doi.org/10.1063/1.5124326

Published: October 2019

View articletitled, Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors

Journal Articles

Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN

Islam Sayed, Bastien Bonef, Wenjian Liu, Silvia Chan, Jana Georgieva, James S. Speck, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 115, 172104 (2019)

https://doi.org/10.1063/1.5125788

Published: October 2019

View articletitled, Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN

Journal Articles

Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

Caroline E. Reilly, Cory Lund, Shuji Nakamura, Umesh K. Mishra, Steven P. DenBaars, Stacia Keller

Appl. Phys. Lett. 114, 241103 (2019)

https://doi.org/10.1063/1.5109734

Published: June 2019

View articletitled, Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

Journal Articles

Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

Haoran Li, Steven Wienecke, Brian Romanczyk, Elaheh Ahmadi, Matthew Guidry, Xun Zheng, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 112, 073501 (2018)

https://doi.org/10.1063/1.5010944

Published: February 2018

View articletitled, Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

Journal Articles

Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN

Cory Lund, Massimo Catalano, Luhua Wang, Christian Wurm, Thomas Mates, Moon Kim, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra, Stacia Keller

J. Appl. Phys. 123, 055702 (2018)

https://doi.org/10.1063/1.5009904

Published: February 2018

View articletitled, Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN

Journal Articles

Maskless regrowth of GaN for trenched devices by MOCVD

Anchal Agarwal, Onur Koksaldi, Chirag Gupta, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 111, 233507 (2017)

https://doi.org/10.1063/1.5003257

Published: December 2017

View articletitled, Maskless regrowth of GaN for trenched devices by MOCVD

Journal Articles

Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al₂O₃ dielectrics grown on GaN

Silvia H. Chan, Davide Bisi, Xiang Liu, Ramya Yeluri, Maher Tahhan, Stacia Keller, Steven P. DenBaars, Matteo Meneghini, Umesh K. Mishra

J. Appl. Phys. 122, 174101 (2017)

https://doi.org/10.1063/1.5009757

Published: November 2017

View articletitled, Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN

Journal Articles

Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy

M. N. Fireman, Haoran Li, Stacia Keller, Umesh K. Mishra, James S. Speck

J. Appl. Phys. 121, 205702 (2017)

https://doi.org/10.1063/1.4983767

Published: May 2017

View articletitled, Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy

Journal Articles

Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

Cory Lund, Brian Romanczyk, Massimo Catalano, Qingxiao Wang, Wenjun Li, Domenic DiGiovanni, Moon J. Kim, Patrick Fay, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra, Stacia Keller

J. Appl. Phys. 121, 185707 (2017)

https://doi.org/10.1063/1.4983300

Published: May 2017

View articletitled, Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

Journal Articles

Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography

Bastien Bonef, Massimo Catalano, Cory Lund, Steven P. Denbaars, Shuji Nakamura, Umesh K. Mishra, Moon J. Kim, Stacia Keller

Appl. Phys. Lett. 110, 143101 (2017)

https://doi.org/10.1063/1.4979786

Published: April 2017

View articletitled, Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography

Journal Articles

Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures

Elaheh Ahmadi, Stacia Keller, Umesh K. Mishra

J. Appl. Phys. 120, 115302 (2016)

https://doi.org/10.1063/1.4962321

Published: September 2016

View articletitled, Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures

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Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes

Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges

Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices

Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE

A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods

Color-tunable < 10 μ m square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates

Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN

Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors

Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates

Investigation of nitrogen polar p-type doped GaN/Al_xGa_(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors

Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN

Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN

Maskless regrowth of GaN for trenched devices by MOCVD

Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al₂O₃ dielectrics grown on GaN

Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy

Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography

Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures

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