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Ulrich T. Schwarz
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Journal Articles

Fast non-equilibrium carrier dynamics in polar InGaN/GaN structures with wide quantum wells

Open Access
Jens W. Tomm, Konrad Sakowski, Artem Bercha, Grzegorz Muzioł, Conny Becht, Ulrich T. Schwarz, Witold Trzeciakowski
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 161103 (2025)
https://doi.org/10.1063/5.0259804
Published: April 2025
View articletitled, Fast non-equilibrium carrier dynamics in polar InGaN/GaN structures with wide quantum wells
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Journal Articles

On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯ ) InGaN/GaN quantum wells

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Christian Mounir, Ingrid L. Koslow, Tim Wernicke, Michael Kneissl, Leah Y. Kuritzky, Nicholas L. Adamski, Sang Ho Oh, Christopher D. Pynn, Steven P. DenBaars, Shuji Nakamura, James S. Speck, Ulrich T. Schwarz
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 085705 (2018)
https://doi.org/10.1063/1.5008263
Published: February 2018
View articletitled, On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯ ) InGaN/GaN quantum wells
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Journal Articles

Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods

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Christian Mounir, Tilman Schimpke, Georg Rossbach, Adrian Avramescu, Martin Strassburg, Ulrich T. Schwarz
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 025701 (2017)
https://doi.org/10.1063/1.4973899
Published: January 2017
View articletitled, Polarization-resolved micro-photoluminescence investigation of InGaN/GaN core-shell microrods
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Journal Articles

Determination of the radiative efficiency of GaN-based light-emitting diodes via bias dependent resonant photoluminescence

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Christian Mounir, Ulrich T. Schwarz
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 011106 (2017)
https://doi.org/10.1063/1.4973589
Published: January 2017
View articletitled, Determination of the radiative efficiency of GaN-based light-emitting diodes via bias dependent resonant photoluminescence
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Journal Articles

Optical properties and internal quantum efficiency of InGaN/GaN core-shell microrods for solid state lighting

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Christian Mounir, Tilman Schimpke, Georg Rossbach, Adrian Avramescu, Martin Strassburg, Ulrich T. Schwarz
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 155702 (2016)
https://doi.org/10.1063/1.4964871
Published: October 2016
View articletitled, Optical properties and internal quantum efficiency of InGaN/GaN core-shell microrods for solid state lighting
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Journal Articles

GaN doped with beryllium—An effective light converter for white light emitting diodes

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Henryk Teisseyre, Michal Bockowski, Izabella Grzegory, Adrian Kozanecki, Benjamin Damilano, Yaroslav Zhydachevskii, Michael Kunzer, Katarzyna Holc, Ulrich T. Schwarz
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 011107 (2013)
https://doi.org/10.1063/1.4812335
Published: July 2013
View articletitled, GaN doped with beryllium—An effective light converter for white light emitting diodes
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Journal Articles

Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition

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Rüdiger Moser, Christian Goßler, Michael Kunzer, Klaus Köhler, Wilfried Pletschen, Jens Brunne, Ulrich T. Schwarz, Joachim Wagner
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 103107 (2013)
https://doi.org/10.1063/1.4794844
Published: March 2013
View articletitled, Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition
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Journal Articles

Strain and defects in Si-doped (Al)GaN epitaxial layers

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Kamran Forghani, Lukas Schade, Ulrich T. Schwarz, Frank Lipski, Oliver Klein, Ute Kaiser, Ferdinand Scholz
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 093102 (2012)
https://doi.org/10.1063/1.4761815
Published: November 2012
View articletitled, Strain and defects in Si-doped (Al)GaN epitaxial layers
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Journal Articles

Electro-optically cavity dumped 2 μm semiconductor disk laser emitting 3 ns pulses of 30 W peak power

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Sebastian Kaspar, Marcel Rattunde, Tino Töpper, Ulrich T. Schwarz, Christian Manz, Klaus Köhler, Joachim Wagner
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 141121 (2012)
https://doi.org/10.1063/1.4757760
Published: October 2012
View articletitled, Electro-optically cavity dumped 2 μm semiconductor disk laser emitting 3 ns pulses of 30 W peak power
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Journal Articles

Polarization dependent study of gain anisotropy in semipolar InGaN lasers

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Jens Rass, Tim Wernicke, Simon Ploch, Moritz Brendel, Andreas Kruse, Andreas Hangleiter, Wolfgang Scheibenzuber, Ulrich T. Schwarz, Markus Weyers, Michael Kneissl
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 171105 (2011)
https://doi.org/10.1063/1.3655183
Published: October 2011
View articletitled, Polarization dependent study of gain anisotropy in semipolar InGaN lasers
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Journal Articles

Improved optical properties of ZnO thin films by concurrently introduced interfacial voids during thermal annealing

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Firat Güder, Yang Yang (杨阳), Julia Danhof, Andreas Hartel, Ulrich T. Schwarz, Margit Zacharias
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 023105 (2011)
https://doi.org/10.1063/1.3609321
Published: July 2011
View articletitled, Improved optical properties of ZnO thin films by concurrently introduced interfacial voids during thermal annealing
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Journal Articles

Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells

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Ulrich T. Schwarz, H. Braun, K. Kojima, Y. Kawakami, S. Nagahama, T. Mukai
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 123503 (2007)
https://doi.org/10.1063/1.2786602
Published: September 2007
View articletitled, Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells
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Journal Articles

Facet degradation of GaN heterostructure laser diodes

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Thomas Schoedl, Ulrich T. Schwarz, Volker Kümmler, Michael Furitsch, Andreas Leber, Andreas Miler, Alfred Lell, Volker Härle
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 123102 (2005)
https://doi.org/10.1063/1.1929851
Published: June 2005
View articletitled, Facet degradation of GaN heterostructure laser diodes
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Journal Articles

Near-field and far-field dynamics of (Al,In)GaN laser diodes

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Ulrich T. Schwarz, Markus Pindl, Werner Wegscheider, Christoph Eichler, Ferdinand Scholz, Michael Furitsch, Andreas Leber, Stephan Miller, Alfred Lell, Volker Härle
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 161112 (2005)
https://doi.org/10.1063/1.1900304
Published: April 2005
View articletitled, Near-field and far-field dynamics of (Al,In)GaN laser diodes
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Journal Articles

Excitonic signature in gain and carrier induced change of refractive index spectra of ( In , Al ) GaN quantum well lasers

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Ulrich T. Schwarz, E. Sturm, W. Wegscheider, V. Kümmler, A. Lell, V. Härle
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 1475–1477 (2004)
https://doi.org/10.1063/1.1789243
Published: August 2004
View articletitled, Excitonic signature in gain and carrier induced change of refractive index spectra of ( In , Al ) GaN quantum well lasers
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