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Journal Articles

Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy

K. Khan, S. Diez, Kai Sun, C. Wurm, U. K. Mishra, E. Ahmadi

APL Mater. 9, 121114 (2021)

https://doi.org/10.1063/5.0063285

Published: December 2021

View articletitled, Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy

Journal Articles

Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films

Henry Collins, Islam Sayed, Wenjian Liu, Shubhra S. Pasayat, Aidan A. Taylor, Weiyi Li, Stacia Keller, U. K. Mishra

Appl. Phys. Lett. 119, 042105 (2021)

https://doi.org/10.1063/5.0049537

Published: July 2021

View articletitled, Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films

Includes: Supplementary data

Journal Articles

Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices

C. Gupta, S. H. Chan, S. S. Pasayat, S. Keller, U. K. Mishra

J. Appl. Phys. 125, 124101 (2019)

https://doi.org/10.1063/1.5082652

Published: March 2019

View articletitled, Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices

Journal Articles

On trapping mechanisms at oxide-traps in Al₂O₃/GaN metal-oxide-semiconductor capacitors

D. Bisi, S. H. Chan, X. Liu, R. Yeluri, S. Keller, M. Meneghini, G. Meneghesso, E. Zanoni, U. K. Mishra

Appl. Phys. Lett. 108, 112104 (2016)

https://doi.org/10.1063/1.4944466

Published: March 2016

View articletitled, On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Journal Articles

Electrical and structural characterizations of crystallized Al₂O₃/GaN interfaces formed by in situ metalorganic chemical vapor deposition

X. Liu, C. M. Jackson, F. Wu, B. Mazumder, R. Yeluri, J. Kim, S. Keller, A. R. Arehart, S. A. Ringel, J. S. Speck, U. K. Mishra

J. Appl. Phys. 119, 015303 (2016)

https://doi.org/10.1063/1.4939157

Published: January 2016

View articletitled, Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition

Journal Articles

Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

N. Killat, M. J. Uren, S. Keller, S. Kolluri, U. K. Mishra, M. Kuball

Appl. Phys. Lett. 105, 063506 (2014)

https://doi.org/10.1063/1.4892449

Published: August 2014

View articletitled, Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

Journal Articles

In situ metalorganic chemical vapor deposition of Al₂O₃ on N-face GaN and evidence of polarity induced fixed charge

X. Liu, J. Kim, D. J. Suntrup, S. Wienecke, M. Tahhan, R. Yeluri, S. H. Chan, J. Lu, H. Li, S. Keller, U. K. Mishra

Appl. Phys. Lett. 104, 263511 (2014)

https://doi.org/10.1063/1.4886768

Published: July 2014

View articletitled, In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge

Journal Articles

Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells

R. M. Farrell, A. A. Al-Heji, C. J. Neufeld, X. Chen, M. Iza, S. C. Cruz, S. Keller, S. Nakamura, S. P. DenBaars, U. K. Mishra, J. S. Speck

Appl. Phys. Lett. 103, 241104 (2013)

https://doi.org/10.1063/1.4844955

Published: December 2013

View articletitled, Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells

Journal Articles

Fixed charge and trap states of in situ Al₂O₃ on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition

X. Liu, J. Kim, R. Yeluri, S. Lal, H. Li, J. Lu, S. Keller, B. Mazumder, J. S. Speck, U. K. Mishra

J. Appl. Phys. 114, 164507 (2013)

https://doi.org/10.1063/1.4827201

Published: October 2013

View articletitled, Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition

Journal Articles

In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al₂O₃ on Ga-face GaN metal-oxide-semiconductor capacitors

X. Liu, R. Yeluri, J. Kim, S. Lal, A. Raman, C. Lund, S. Wienecke, J. Lu, M. Laurent, S. Keller, U. K. Mishra

Appl. Phys. Lett. 103, 053509 (2013)

https://doi.org/10.1063/1.4817385

Published: July 2013

View articletitled, In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors

Journal Articles

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

A. Sasikumar, A. R. Arehart, S. Martin-Horcajo, M. F. Romero, Y. Pei, D. Brown, F. Recht, M. A. di Forte-Poisson, F. Calle, M. J. Tadjer, S. Keller, S. P. DenBaars, U. K. Mishra, S. A. Ringel

Appl. Phys. Lett. 103, 033509 (2013)

https://doi.org/10.1063/1.4813862

Published: July 2013

View articletitled, Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Journal Articles

Spatially-resolved spectroscopic measurements of E_c − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

D. W. Cardwell, A. Sasikumar, A. R. Arehart, S. W. Kaun, J. Lu, S. Keller, J. S. Speck, U. K. Mishra, S. A. Ringel, J. P. Pelz

Appl. Phys. Lett. 102, 193509 (2013)

https://doi.org/10.1063/1.4806980

Published: May 2013

View articletitled, Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

Journal Articles

Erratum: “Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures” [Appl. Phys. Lett. 101, 091601 (2012)]

B. Mazumder, M. H. Wong, C. A. Hurni, J. Y. Zhang, U. K. Mishra, J. S. Speck

Appl. Phys. Lett. 101, 229902 (2012)

https://doi.org/10.1063/1.4766344

Published: November 2012

View articletitled, Erratum: “Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures” [Appl. Phys. Lett. 101, 091601 (2012)]

Journal Articles

Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal ( 000 1 ¯ ) GaN

S. Keller, N. Pfaff, S. P. DenBaars, U. K. Mishra

Appl. Phys. Lett. 101, 182103 (2012)

https://doi.org/10.1063/1.4764070

Published: October 2012

View articletitled, Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal ( 000 1 ¯ ) GaN

Journal Articles

Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

B. Mazumder, M. H. Wong, C. A. Hurni, J. Y. Zhang, U. K. Mishra, J. S. Speck

Appl. Phys. Lett. 101, 091601 (2012)

https://doi.org/10.1063/1.4748116

Published: August 2012

View articletitled, Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

Includes: Supplementary data

Journal Articles

Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

D. W. Cardwell, A. R. Arehart, C. Poblenz, Y. Pei, J. S. Speck, U. K. Mishra, S. A. Ringel, J. P. Pelz

Appl. Phys. Lett. 100, 193507 (2012)

https://doi.org/10.1063/1.4714536

Published: May 2012

View articletitled, Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

Journal Articles

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

C. Hodges, N. Killat, S. W. Kaun, M. H. Wong, F. Gao, T. Palacios, U. K. Mishra, J. S. Speck, D. Wolverson, M. Kuball

Appl. Phys. Lett. 100, 112106 (2012)

https://doi.org/10.1063/1.3693427

Published: March 2012

View articletitled, Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Journal Articles

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

M. Ťapajna, S. W. Kaun, M. H. Wong, F. Gao, T. Palacios, U. K. Mishra, J. S. Speck, M. Kuball

Appl. Phys. Lett. 99, 223501 (2011)

https://doi.org/10.1063/1.3663573

Published: November 2011

View articletitled, Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

Journal Articles

Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors

T. Roy, E. X. Zhang, Y. S. Puzyrev, X. Shen, D. M. Fleetwood, R. D. Schrimpf, G. Koblmueller, R. Chu, C. Poblenz, N. Fichtenbaum, C. S. Suh, U. K. Mishra, J. S. Speck, S. T. Pantelides

Appl. Phys. Lett. 99, 203501 (2011)

https://doi.org/10.1063/1.3662041

Published: November 2011

View articletitled, Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors

Journal Articles

Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures

G. A. Umana-Membreno, T. B. Fehlberg, S. Kolluri, D. F. Brown, S. Keller, U. K. Mishra, B. D. Nener, L. Faraone, G. Parish

Appl. Phys. Lett. 98, 222103 (2011)

https://doi.org/10.1063/1.3595341

Published: June 2011

View articletitled, Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures

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Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy

Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films

Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices

On trapping mechanisms at oxide-traps in Al₂O₃/GaN metal-oxide-semiconductor capacitors

Electrical and structural characterizations of crystallized Al₂O₃/GaN interfaces formed by in situ metalorganic chemical vapor deposition

Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

In situ metalorganic chemical vapor deposition of Al₂O₃ on N-face GaN and evidence of polarity induced fixed charge

Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells

Fixed charge and trap states of in situ Al₂O₃ on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition

In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al₂O₃ on Ga-face GaN metal-oxide-semiconductor capacitors

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Spatially-resolved spectroscopic measurements of E_c − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

Erratum: “Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures” [Appl. Phys. Lett. 101, 091601 (2012)]

Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal ( 000 1 ¯ ) GaN

Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors

Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures

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