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U-In Chung
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Journal Articles

Impact of transparent electrode on photoresponse of ZnO-based phototransistor

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Seunghyup Lee, Seung-Eon Ahn, Yongwoo Jeon, Ji-Hoon Ahn, Ihun Song, Sanghun Jeon, Dong-Jin Yun, Jungwoo Kim, Hyung Choi, U-in Chung, Jaechul Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 251111 (2013)
https://doi.org/10.1063/1.4855055
Published: December 2013
View articletitled, Impact of transparent electrode on photoresponse of ZnO-based phototransistor
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Journal Articles

Temperature dependence of photocurrent in an amorphous GaInZnO/InZnO thin film transistor

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Ji-Hoon Ahn, Seung-Eon Ahn, Yongwoo Jeon, Seunghyup Lee, Ihun Song, Jungwoo Kim, Hyung Choi, U-in Chung
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 173515 (2013)
https://doi.org/10.1063/1.4826919
Published: October 2013
View articletitled, Temperature dependence of photocurrent in an amorphous GaInZnO/InZnO thin film transistor
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Journal Articles

Effect of Fe–O distance on magnetocrystalline anisotropy energy at the Fe/MgO(001) interface

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Sung-Chul Lee, Kwang-Seok Kim, Sung-Hoon Lee, Ung-Hwan Pi, Keewon Kim, Youngman Jang, U-In Chung
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 023914 (2013)
https://doi.org/10.1063/1.4775604
Published: January 2013
View articletitled, Effect of Fe–O distance on magnetocrystalline anisotropy energy at the Fe/MgO(001) interface
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Journal Articles

First principles study of oxygen vacancy states in monoclinic ZrO2: Interpretation of conduction characteristics

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Ji-Hyun Hur, Seongjun Park, U-In Chung
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 113719 (2012)
https://doi.org/10.1063/1.4768894
Published: December 2012
View articletitled, First principles study of oxygen vacancy states in monoclinic ZrO2: Interpretation of conduction characteristics
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Journal Articles

The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility

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Hyun-Sik Choi, Sanghun Jeon, Hojung Kim, Jaikwang Shin, Changjung Kim, U-In Chung
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 173501 (2012)
https://doi.org/10.1063/1.4705406
Published: April 2012
View articletitled, The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility
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Journal Articles

Influence of Hf contents on interface state properties in a-HfInZnO thin-film transistors with SiNx/SiOx gate dielectrics

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Hyun-Sik Choi, Sanghun Jeon, Hojung Kim, Jaikwang Shin, Changjung Kim, U-In Chung
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 183502 (2011)
https://doi.org/10.1063/1.3658460
Published: November 2011
View articletitled, Influence of Hf contents on interface state properties in a-HfInZnO thin-film transistors with SiNx/SiOx gate dielectrics
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Journal Articles

Short channel device performance of amorphous InGaZnO thin film transistor

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Sanghun Jeon, Anass Benayad, Seung-Eon Ahn, Sungho Park, Ihun Song, Changjung Kim, U-In Chung
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 082104 (2011)
https://doi.org/10.1063/1.3623426
Published: August 2011
View articletitled, Short channel device performance of amorphous InGaZnO thin film transistor
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Journal Articles

The effect of the static magnetic susceptibility on the spin precession in MgO based magnetic tunnel junction

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Ung-Hwan Pi, Sung-Chul Lee, Kwang-Seok Kim, Keewon Kim, Jay-Kwang Shin, U-in Chung
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 242509 (2011)
https://doi.org/10.1063/1.3601463
Published: June 2011
View articletitled, The effect of the static magnetic susceptibility on the spin precession in MgO based magnetic tunnel junction
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Journal Articles

Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

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Sungsik Lee, Khashayar Ghaffarzadeh, Arokia Nathan, John Robertson, Sanghun Jeon, Changjung Kim, I-Hun Song, U-In Chung
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 203508 (2011)
https://doi.org/10.1063/1.3589371
Published: May 2011
View articletitled, Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors
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Journal Articles

Highly efficient yellow photoluminescence from {11–22} InGaN multiquantum-well grown on nanoscale pyramid structure

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Taek Kim, Joosung Kim, Moon-Seung Yang, Sangmoon Lee, Youngsoo Park, U-In Chung, Yonghoon Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 241111 (2010)
https://doi.org/10.1063/1.3524524
Published: December 2010
View articletitled, Highly efficient yellow photoluminescence from {11–22} InGaN multiquantum-well grown on nanoscale pyramid structure
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Journal Articles

Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes

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David Seo, Sanghun Jeon, Sunae Seo, Ihun Song, Changjung Kim, Sungho Park, James S. Harris, U.-In Chung
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 172106 (2010)
https://doi.org/10.1063/1.3490245
Published: October 2010
View articletitled, Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes
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Journal Articles

Persistent photoconductivity in Hf–In–Zn–O thin film transistors

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Khashayar Ghaffarzadeh, Arokia Nathan, John Robertson, Sangwook Kim, Sanghun Jeon, Changjung Kim, U-In Chung, Je-Hun Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 143510 (2010)
https://doi.org/10.1063/1.3496029
Published: October 2010
View articletitled, Persistent photoconductivity in Hf–In–Zn–O thin film transistors
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Journal Articles

Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress

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Khashayar Ghaffarzadeh, Arokia Nathan, John Robertson, Sangwook Kim, Sanghun Jeon, Changjung Kim, U-In Chung, Je-Hun Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 113504 (2010)
https://doi.org/10.1063/1.3480547
Published: September 2010
View articletitled, Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress
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Journal Articles

Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

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Chang-Jung Kim, Sangwook Kim, Je-Hun Lee, Jin-Seong Park, Sunil Kim, Jaechul Park, Eunha Lee, Jaechul Lee, Youngsoo Park, Joo Han Kim, Sung Tae Shin, U-In Chung
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 252103 (2009)
https://doi.org/10.1063/1.3275801
Published: December 2009
View articletitled, Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
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Journal Articles

Selective growth of carbon nanotube for via interconnects by oxidation and selective reduction of catalyst

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Sunwoo Lee, Seongho Moon, Hong Sik Yoon, Xiaofeng Wang, Dong Woo Kim, In-Seok Yeo, U-In Chung, Joo-Tae Moon, Jaegwan Chung
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 182106 (2008)
https://doi.org/10.1063/1.3021363
Published: November 2008
View articletitled, Selective growth of carbon nanotube for via interconnects by oxidation and selective reduction of catalyst
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Journal Articles

Irreversible extinction of ferroelectric polarization in P(VDF-TrFE) thin films upon melting and recrystallization

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Youn Jung Park, Seok Ju Kang, Cheolmin Park, Kap Jin Kim, Han Sup Lee, Moon Sook Lee, U-In Chung, In Jun Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 242908 (2006)
https://doi.org/10.1063/1.2207831
Published: June 2006
View articletitled, Irreversible extinction of ferroelectric polarization in P(VDF-TrFE) thin films upon melting and recrystallization
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Journal Articles

Improvement of resistive memory switching in NiO using Ir O 2

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D. C. Kim, M. J. Lee, S. E. Ahn, S. Seo, J. C. Park, I. K. Yoo, I. G. Baek, H. J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U-In Chung, J. T. Moon, B. I. Ryu
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 232106 (2006)
https://doi.org/10.1063/1.2210087
Published: June 2006
View articletitled, Improvement of resistive memory switching in NiO using Ir O 2
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Journal Articles

Electrical observations of filamentary conductions for the resistive memory switching in NiO films

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D. C. Kim, S. Seo, S. E. Ahn, D.-S. Suh, M. J. Lee, B.-H. Park, I. K. Yoo, I. G. Baek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U-In Chung, J. T. Moon, B. I. Ryu
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 202102 (2006)
https://doi.org/10.1063/1.2204649
Published: May 2006
View articletitled, Electrical observations of filamentary conductions for the resistive memory switching in NiO films
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Journal Articles

Dopant loss of ultrashallow junction by wet chemical cleaning

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G. H. Buh, T. Park, G. H. Yon, S. B. Kim, Y. J. Jee, S. J. Hong, C. Ryoo, J. R. Yoo, J. W. Lee, C. S. Jun, Y. G. Shin, U-In Chung, J. T. Moon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 499–502 (2006)
https://doi.org/10.1116/1.2132323
Published: January 2006
View articletitled, Dopant loss of ultrashallow junction by wet chemical cleaning
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Journal Articles

Quantification of Shallow‐junction Dopant Loss during CMOS Process

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G. H. Buh, T. Park, Y. Jee, S. J. Hong, C. Ryoo, J. Yoo, J. W. Lee, G. H. Yon, C. S. Jun, Y. G. Shin, U.‐In Chung, J. T. Moon
Journal: AIP Conference Proceedings
AIP Conf. Proc. 788, 275–279 (2005)
https://doi.org/10.1063/1.2062976
Published: September 2005
View articletitled, Quantification of Shallow‐junction Dopant Loss during CMOS Process
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