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Tsung-Ming Tsai
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Journal Articles

A solid-state semiconductor battery with silica-coated TiO2 core–shell energy storage nanoparticles for rechargeable device application

Open Access
Min-Chuan Wang, Bo-Hsien Wu, Shang-En Liu, Yu-Chen Li, Shih-Kai Lin, Tsung-Ming Tsai, Ting-Chang Chang
Journal: AIP Advances
AIP Advances 13, 095011 (2023)
https://doi.org/10.1063/5.0157072
Published: September 2023
View articletitled, A solid-state semiconductor battery with silica-coated TiO2 core–shell energy storage nanoparticles for rechargeable device application
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Journal Articles

Tuning the nanostructures and optical properties of undoped and N-doped ZnO by supercritical fluid treatment

Open Access
Yaping Li, Hui-Qiong Wang, Tian-Jian Chu, Yu-Chiuan Li, Xiaojun Li, Xiaxia Liao, Xiaodan Wang, Hua Zhou, Junyong Kang, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Jin-Cheng Zheng
Journal: AIP Advances
AIP Advances 8, 055310 (2018)
https://doi.org/10.1063/1.5026446
Published: May 2018
View articletitled, Tuning the nanostructures and optical properties of undoped and N-doped ZnO by supercritical fluid treatment
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Includes: Supplementary data
Journal Articles

Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors

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Hsiao-Cheng Chiang, Ting-Chang Chang, Po-Yung Liao, Bo-Wei Chen, Yu-Ching Tsao, Tsung-Ming Tsai, Yu-Chieh Chien, Yi-Chieh Yang, Kuan-Fu Chen, Chung-I Yang, Yu-Ju Hung, Kuan-Chang Chang, Sheng-Dong Zhang, Sung-Chun Lin, Cheng-Yen Yeh
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 133504 (2017)
https://doi.org/10.1063/1.5004526
Published: September 2017
View articletitled, Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors
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Journal Articles

Publisher's Note: “The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors” [Appl. Phys. Lett. 110 , 103502 (2017)]

Free
Wan-Ching Su, Ting-Chang Chang, Po-Yung Liao, Yu-Jia Chen, Bo-Wei Chen, Tien-Yu Hsieh, Chung-I Yang, Yen-Yu Huang, Hsi-Ming Chang, Shin-Chuan Chiang, Kuan-Chang Chang, Tsung-Ming Tsai
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 159901 (2017)
https://doi.org/10.1063/1.4979076
Published: April 2017
View articletitled, Publisher's Note: “The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors” [Appl. Phys. Lett. 110 , 103502 (2017)]
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Journal Articles

The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors

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Wan-Ching Su, Ting-Chang Chang, Po-Yung Liao, Yu-Jia Chen, Bo-Wei Chen, Tien-Yu Hsieh, Chung-I Yang, Yen-Yu Huang, Hsi-Ming Chang, Shin-Chuan Chiang, Kuan-Chang Chang, Tsung-Ming Tsai
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 103502 (2017)
https://doi.org/10.1063/1.4975206
Published: March 2017
View articletitled, The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors
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Journal Articles

Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3:ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence

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Chih-Hung Pan, Ting-Chang Chang, Tsung-Ming Tsai, Kuan-Chang Chang, Po-Hsun Chen, Shi-Wang Chang-Chien, Min-Chen Chen, Hui-Chun Huang, Huaqiang Wu, Ning Deng, He Qian, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 183509 (2016)
https://doi.org/10.1063/1.4966181
Published: November 2016
View articletitled, Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3:ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence
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Journal Articles

Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM

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Chih-Hung Pan, Ting-Chang Chang, Tsung-Ming Tsai, Kuan-Chang Chang, Tian-Jian Chu, Wen-Yan Lin, Min-Chen Chen, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 133503 (2016)
https://doi.org/10.1063/1.4963672
Published: September 2016
View articletitled, Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM
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Journal Articles

Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

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Yi-Ting Tseng, Tsung-Ming Tsai, Ting-Chang Chang, Chih-Cheng Shih, Kuan-Chang Chang, Rui Zhang, Kai-Huang Chen, Jung-Hui Chen, Yu-Chiuan Li, Chih-Yang Lin, Ya-Chi Hung, Yong-En Syu, Jin-Cheng Zheng, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 213505 (2015)
https://doi.org/10.1063/1.4921239
Published: May 2015
View articletitled, Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory
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Journal Articles

Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

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Tian-Jian Chu, Tsung-Ming Tsai, Ting-Chang Chang, Kuan-Chang Chang, Chih-Hung Pan, Kai-Huang Chen, Jung-Hui Chen, Hsin-Lu Chen, Hui-Chun Huang, Chih-Cheng Shih, Yong-En Syu, Jin-Cheng Zheng, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 223514 (2014)
https://doi.org/10.1063/1.4902503
Published: December 2014
View articletitled, Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory
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Journal Articles

Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor

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Hsin-lu Chen, Ting-Chang Chang, Tai-Fa Young, Tsung-Ming Tsai, Kuan-Chang Chang, Rui Zhang, Sheng-Yao Huang, Kai-Huang Chen, J. C. Lou, Min-Chen Chen, Chih-Cheng Shih, Syuan-Yong Huang, Jung-Hui Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 243508 (2014)
https://doi.org/10.1063/1.4883899
Published: June 2014
View articletitled, Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor
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Journal Articles

Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors

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Kuan-Hsien Liu, Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tien-Yu Hsieh, Min-Chen Chen, Bo-Liang Yeh, Wu-Ching Chou
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 103501 (2014)
https://doi.org/10.1063/1.4863682
Published: March 2014
View articletitled, Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors
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Journal Articles

Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

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Rui Zhang, Tsung-Ming Tsai, Ting-Chang Chang, Kuan-Chang Chang, Kai-Huang Chen, Jen-Chung Lou, Tai-Fa Young, Jung-Hui Chen, Syuan-Yong Huang, Min-Chen Chen, Chih-Cheng Shih, Hsin-Lu Chen, Jhih-Hong Pan, Cheng-Wei Tung, Yong-En Syu, Simon M. Sze
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 234501 (2013)
https://doi.org/10.1063/1.4843695
Published: December 2013
View articletitled, Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory
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Journal Articles

Characteristics of hafnium oxide resistance random access memory with different setting compliance current

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Yu-Ting Su, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Rui Zhang, J. C. Lou, Jung-Hui Chen, Tai-Fa Young, Kai-Huang Chen, Bae-Heng Tseng, Chih-Cheng Shih, Ya-Liang Yang, Min-Chen Chen, Tian-Jian Chu, Chih-Hung Pan, Yong-En Syu, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 163502 (2013)
https://doi.org/10.1063/1.4825104
Published: October 2013
View articletitled, Characteristics of hafnium oxide resistance random access memory with different setting compliance current
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Journal Articles

Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process

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Kuan-Chang Chang, Tsung-Ming Tsai, Rui Zhang, Ting-Chang Chang, Kai-Huang Chen, Jung-Hui Chen, Tai-Fa Young, J. C. Lou, Tian-Jian Chu, Chih-Cheng Shih, Jhih-Hong Pan, Yu-Ting Su, Yong-En Syu, Cheng-Wei Tung, Min-Chen Chen, Jia-Jie Wu, Ying Hu, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 083509 (2013)
https://doi.org/10.1063/1.4819162
Published: August 2013
View articletitled, Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
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Journal Articles

Performance and characteristics of double layer porous silicon oxide resistance random access memory

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Tsung-Ming Tsai, Kuan-Chang Chang, Rui Zhang, Ting-Chang Chang, J. C. Lou, Jung-Hui Chen, Tai-Fa Young, Bae-Heng Tseng, Chih-Cheng Shih, Yin-Chih Pan, Min-Chen Chen, Jhih-Hong Pan, Yong-En Syu, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 253509 (2013)
https://doi.org/10.1063/1.4812474
Published: June 2013
View articletitled, Performance and characteristics of double layer porous silicon oxide resistance random access memory
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Journal Articles

The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory

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Jen-Wei Huang, Rui Zhang, Ting-Chang Chang, Tsung-Ming Tsai, Kuan-Chang Chang, J. C. Lou, Tai-Fa Young, Jung-Hui Chen, Hsin-Lu Chen, Yin-Chih Pan, Xuan Huang, Fengyan Zhang, Yong-En Syu, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 203507 (2013)
https://doi.org/10.1063/1.4807577
Published: May 2013
View articletitled, The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
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Journal Articles

Mechanical stress influence on electronic transport in low-k SiOC dielectric single damascene capacitor

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Ya-Liang Yang, Tai-Fa Young, Ting-Chang Chang, Fu-Yen Shen, Jia-Haw Hsu, Tsung-Ming Tsai, Kuan-Chang Chang, Hisn-Lu Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 192912 (2013)
https://doi.org/10.1063/1.4807010
Published: May 2013
View articletitled, Mechanical stress influence on electronic transport in low-k SiOC dielectric single damascene capacitor
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Journal Articles

Atomic-level quantized reaction of HfOx memristor

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Yong-En Syu, Ting-Chang Chang, Jyun-Hao Lou, Tsung-Ming Tsai, Kuan-Chang Chang, Ming-Jinn Tsai, Ying-Lang Wang, Ming Liu, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 172903 (2013)
https://doi.org/10.1063/1.4802821
Published: April 2013
View articletitled, Atomic-level quantized reaction of HfOx memristor
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Journal Articles

Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices

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Kai-Huang Chen, Rui Zhang, Ting-Chang Chang, Tsung-Ming Tsai, Kuan-Chang Chang, J. C. Lou, Tai-Fa Young, Jung-Hui Chen, Chih-Cheng Shih, Cheng-Wei Tung, Yong-En Syu, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 133503 (2013)
https://doi.org/10.1063/1.4799655
Published: April 2013
View articletitled, Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
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Journal Articles

Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

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Tsung-Ming Tsai, Kuan-Chang Chang, Ting-Chang Chang, Yong-En Syu, Kuo-Hsiao Liao, Bae-Heng Tseng, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 112906 (2012)
https://doi.org/10.1063/1.4750235
Published: September 2012
View articletitled, Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment
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