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Journal Articles

Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC

Shota Kozakai, Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto

J. Appl. Phys. 136, 095702 (2024)

https://doi.org/10.1063/5.0221700

Published: September 2024

View article titled, Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC

Journal Articles

High electron mobility in heavily sulfur-doped 4H-SiC

Mitsuaki Kaneko, Taiga Matsuoka, Tsunenobu Kimoto

J. Appl. Phys. 135, 205702 (2024)

https://doi.org/10.1063/5.0207833

Published: May 2024

View article titled, High electron mobility in heavily sulfur-doped 4H-SiC

Journal Articles

Origin of hole mobility anisotropy in 4H-SiC

Ryoya Ishikawa, Hajime Tanaka, Mitsuaki Kaneko, Tsunenobu Kimoto

J. Appl. Phys. 135, 075704 (2024)

https://doi.org/10.1063/5.0186307

Published: February 2024

View article titled, Origin of hole mobility anisotropy in 4H-SiC

Journal Articles

Impact of the oxidation temperature on the density of single-photon sources formed at SiO₂/SiC interface

Mitsuaki Kaneko, Hideaki Takashima, Konosuke Shimazaki, Shigeki Takeuchi, Tsunenobu Kimoto

APL Mater. 11, 091121 (2023)

https://doi.org/10.1063/5.0162610

Published: September 2023

View article titled, Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface

Journal Articles

Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes

Masahiro Hara, Hajime Tanaka, Mitsuaki Kaneko, Tsunenobu Kimoto

Appl. Phys. Lett. 120, 172103 (2022)

https://doi.org/10.1063/5.0088681

Published: April 2022

View article titled, Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes

Journal Articles

Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy

Kazutaka Kanegae, Takafumi Okuda, Masahiro Horita, Jun Suda, Tsunenobu Kimoto

J. Appl. Phys. 130, 105703 (2021)

https://doi.org/10.1063/5.0059588

Published: September 2021

View article titled, Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy

Journal Articles

Impact ionization coefficients and critical electric field in GaN

Takuya Maeda, Tetsuo Narita, Shinji Yamada, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita, Jun Suda

J. Appl. Phys. 129, 185702 (2021)

https://doi.org/10.1063/5.0050793

Published: May 2021

View article titled, Impact ionization coefficients and critical electric field in GaN

Journal Articles

Effect of quantum confinement on the defect-induced localized levels in 4H-SiC(0001)/SiO₂ systems

Koji Ito, Takuma Kobayashi, Tsunenobu Kimoto

J. Appl. Phys. 128, 095702 (2020)

https://doi.org/10.1063/5.0013240

Published: September 2020

View article titled, Effect of quantum confinement on the defect-induced localized levels in 4H-SiC(0001)/SiO2 systems

Journal Articles

Unique resistive switching phenomena exhibiting both filament-type and interface-type switching in Ti/Pr_0.7Ca_0.3MnO_{3− δ}/Pt ReRAM cells

Naoki Kanegami, Yusuke Nishi, Tsunenobu Kimoto

Appl. Phys. Lett. 116, 013501 (2020)

https://doi.org/10.1063/1.5131090

Published: January 2020

View article titled, Unique resistive switching phenomena exhibiting both filament-type and interface-type switching in Ti/Pr0.7Ca0.3MnO3− δ /Pt ReRAM cells

Journal Articles

Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

Takuya Maeda, Tetsuo Narita, Hiroyuki Ueda, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita, Jun Suda

Appl. Phys. Lett. 115, 142101 (2019)

https://doi.org/10.1063/1.5114844

Published: September 2019

View article titled, Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

Journal Articles

Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

Kazutaka Kanegae, Hajime Fujikura, Yohei Otoki, Taichiro Konno, Takehiro Yoshida, Masahiro Horita, Tsunenobu Kimoto, Jun Suda

Appl. Phys. Lett. 115, 012103 (2019)

https://doi.org/10.1063/1.5098965

Published: July 2019

View article titled, Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

Journal Articles

Effects of TiO₂ crystallinity and oxygen composition on forming characteristics in Pt/TiO₂/Pt resistive switching cells

Masaya Arahata, Yusuke Nishi, Tsunenobu Kimoto

AIP Advances 8, 125010 (2018)

https://doi.org/10.1063/1.5060639

Published: December 2018

View article titled, Effects of TiO2 crystallinity and oxygen composition on forming characteristics in Pt/TiO2/Pt resistive switching cells

Journal Articles

Conductance fluctuation in NiO-based resistive switching memory

Yusuke Nishi, Hiroki Sasakura, Tsunenobu Kimoto

J. Appl. Phys. 124, 152134 (2018)

https://doi.org/10.1063/1.5037486

Published: October 2018

View article titled, Conductance fluctuation in NiO-based resistive switching memory

Journal Articles

Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC

Masashi Kato, Shinya Katahira, Yoshihito Ichikawa, Shunta Harada, Tsunenobu Kimoto

J. Appl. Phys. 124, 095702 (2018)

https://doi.org/10.1063/1.5042561

Published: September 2018

View article titled, Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC

Journal Articles

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

Takuya Maeda, Tetsuo Narita, Masakazu Kanechika, Tsutomu Uesugi, Tetsu Kachi, Tsunenobu Kimoto, Masahiro Horita, Jun Suda

Appl. Phys. Lett. 112, 252104 (2018)

https://doi.org/10.1063/1.5031215

Published: June 2018

View article titled, Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

Journal Articles

Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC

Satoshi Asada, Tsunenobu Kimoto, Ivan G. Ivanov

Appl. Phys. Lett. 111, 072101 (2017)

https://doi.org/10.1063/1.4989648

Published: August 2017

View article titled, Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC

Journal Articles

Carbon ejection from a SiO₂/SiC(0001) interface by annealing in high-purity Ar

Takuma Kobayashi, Tsunenobu Kimoto

Appl. Phys. Lett. 111, 062101 (2017)

https://doi.org/10.1063/1.4997599

Published: August 2017

View article titled, Carbon ejection from a SiO2/SiC(0001) interface by annealing in high-purity Ar

Journal Articles

Interface properties of NO-annealed 4H-SiC (0001), ( 11 2 ¯ ), and ( 1 1 ¯ 00 ) MOS structures with heavily doped p-bodies

Takuma Kobayashi, Seiya Nakazawa, Takafumi Okuda, Jun Suda, Tsunenobu Kimoto

J. Appl. Phys. 121, 145703 (2017)

https://doi.org/10.1063/1.4981127

Published: April 2017

View article titled, Interface properties of NO-annealed 4H-SiC (0001), ( 11 2 ¯ ), and ( 1 1 ¯ 00 ) MOS structures with heavily doped p-bodies

Journal Articles

Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature

Takuma Kobayashi, Jun Suda, Tsunenobu Kimoto

AIP Advances 7, 045008 (2017)

https://doi.org/10.1063/1.4980024

Published: April 2017

View article titled, Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature

Journal Articles

Effect of NiO crystallinity on forming characteristics in Pt/NiO/Pt cells as resistive switching memories

Yusuke Nishi, Tsunenobu Kimoto

J. Appl. Phys. 120, 115308 (2016)

https://doi.org/10.1063/1.4962862

Published: September 2016

View article titled, Effect of NiO crystallinity on forming characteristics in Pt/NiO/Pt cells as resistive switching memories

NARROW

Topics

Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC

High electron mobility in heavily sulfur-doped 4H-SiC

Origin of hole mobility anisotropy in 4H-SiC

Impact of the oxidation temperature on the density of single-photon sources formed at SiO₂/SiC interface

Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes

Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy

Impact ionization coefficients and critical electric field in GaN

Effect of quantum confinement on the defect-induced localized levels in 4H-SiC(0001)/SiO₂ systems

Unique resistive switching phenomena exhibiting both filament-type and interface-type switching in Ti/Pr_0.7Ca_0.3MnO_{3− δ}/Pt ReRAM cells

Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

Effects of TiO₂ crystallinity and oxygen composition on forming characteristics in Pt/TiO₂/Pt resistive switching cells

Conductance fluctuation in NiO-based resistive switching memory

Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC

Carbon ejection from a SiO₂/SiC(0001) interface by annealing in high-purity Ar

Interface properties of NO-annealed 4H-SiC (0001), ( 11 2 ¯ ), and ( 1 1 ¯ 00 ) MOS structures with heavily doped p-bodies

Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature

Effect of NiO crystallinity on forming characteristics in Pt/NiO/Pt cells as resistive switching memories

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