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Journal Articles

Perovskite oxide based transparent neuromorphic photoelectric memristor for artificial ocular system

Open Access
Saransh Shrivastava, Stephen Ekaputra Limantoro, Hans Juliano, Tseung-Yuen Tseng
Journal: APL Materials
APL Mater. 13, 071105 (2025)
https://doi.org/10.1063/5.0261193
Published: July 2025
View articletitled, Perovskite oxide based transparent neuromorphic photoelectric memristor for artificial ocular system
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Journal Articles

Recent developments on neuromorphic optoelectronic memristors based on metal oxide semiconductors: A review

FeaturedOpen Access
Saransh Shrivastava, Hans Juliano, Phan Ai Linh Uong, Tseung-Yuen Tseng
Journal: APL Electronic Devices
APL Electronic Devices 1, 021506 (2025)
https://doi.org/10.1063/5.0275306
Published: June 2025
View articletitled, Recent developments on neuromorphic optoelectronic memristors based on metal oxide semiconductors: A review
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Journal Articles

Metal interdiffusion enhanced WOx/CuOx heterojunction optoelectronic memristive synapses for face recognition application

Open Access
Hans Juliano, Stephen Ekaputra Limantoro, Firman M. Simanjuntak, Tseung-Yuen Tseng
Journal: APL Materials
APL Mater. 13, 051112 (2025)
https://doi.org/10.1063/5.0252709
Published: May 2025
View articletitled, Metal interdiffusion enhanced WOx/CuOx heterojunction optoelectronic memristive synapses for face recognition application
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Journal Articles

Metal free all oxide SnOx/HfOx bilayer transristor synapse for neuromorphic computing

Open Access
Asutosh Patnaik, Debashis Panda, Ping-Xing Chen, Narayan Sahoo, Tseung-Yuen Tseng
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 115105 (2025)
https://doi.org/10.1063/5.0231295
Published: March 2025
View articletitled, Metal free all oxide SnOx/HfOx bilayer transristor synapse for neuromorphic computing
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Journal Articles

Fully visible light controlled neuro-synaptic ReRAM device based on metal oxide heterojunction

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Saransh Shrivastava, Hsiao-Ni Chi, Stephen Ekaputra Limantoro, Hans Juliano, Tseung-Yuen Tseng
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 133503 (2024)
https://doi.org/10.1063/5.0199385
Published: March 2024
View articletitled, Fully visible light controlled neuro-synaptic ReRAM device based on metal oxide heterojunction
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Includes: Supplementary data
Journal Articles

Conduction channel configuration controlled digital and analog response in TiO2-based inorganic memristive artificial synapses

Open Access
Firman Mangasa Simanjuntak, Chun-Ling Hsu, Thomas Abbey, Lung-Yu Chang, Sailesh Rajasekaran, Themis Prodromakis, Tseung-Yuen Tseng
Journal: APL Materials
APL Mater. 9, 121103 (2021)
https://doi.org/10.1063/5.0067302
Published: December 2021
View articletitled, Conduction channel configuration controlled digital and analog response in TiO2-based inorganic memristive artificial synapses
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Journal Articles

Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure

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Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Debashis Panda, Sailesh Rajasekaran, Cut Rullyani, Govindasamy Madhaiyan, Themistoklis Prodromakis, Tseung-Yuen Tseng
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 173502 (2021)
https://doi.org/10.1063/5.0047036
Published: April 2021
View articletitled, Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure
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Includes: Supplementary data
Journal Articles

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

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Aftab Saleem, Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Sailesh Rajasekaran, Tseung-Yuen Tseng, Themis Prodromakis
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 112103 (2021)
https://doi.org/10.1063/5.0041808
Published: March 2021
View articletitled, Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications
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Journal Articles

Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices

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Lung-Yu Chang, Firman Mangasa Simanjuntak, Chun-Ling Hsu, Sridhar Chandrasekaran, Tseung-Yuen Tseng
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 073504 (2020)
https://doi.org/10.1063/5.0014829
Published: August 2020
View articletitled, Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices
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Journal Articles

ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices

Open Access
Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Chun-Chieh Lin, Tseung-Yuen Tseng
Journal: APL Materials
APL Mater. 7, 051108 (2019)
https://doi.org/10.1063/1.5092991
Published: May 2019
View articletitled, ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
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Includes: Supplementary data
Journal Articles

Impact of barrier layer on HfO2-based conductive bridge random access memory

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Chun-An Lin, Chu-Jie Huang, Tseung-Yuen Tseng
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 093105 (2019)
https://doi.org/10.1063/1.5087421
Published: March 2019
View articletitled, Impact of barrier layer on HfO2-based conductive bridge random access memory
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Journal Articles

Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory

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Sridhar Chandrasekaran, Firman Mangasa Simanjuntak, Tsung-Ling Tsai, Chun-An Lin, Tseung-Yuen Tseng
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 113108 (2017)
https://doi.org/10.1063/1.5003622
Published: September 2017
View articletitled, Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
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Includes: Supplementary data
Journal Articles

Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer

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Dayanand Kumar, Rakesh Aluguri, Umesh Chand, Tseung-Yuen Tseng
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 203102 (2017)
https://doi.org/10.1063/1.4983465
Published: May 2017
View articletitled, Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer
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Journal Articles

Impacts of Co doping on ZnO transparent switching memory device characteristics

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Firman Mangasa Simanjuntak, Om Kumar Prasad, Debashis Panda, Chun-An Lin, Tsung-Ling Tsai, Kung-Hwa Wei, Tseung-Yuen Tseng
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 183506 (2016)
https://doi.org/10.1063/1.4948598
Published: May 2016
View articletitled, Impacts of Co doping on ZnO transparent switching memory device characteristics
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Includes: Supplementary data
Journal Articles

Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

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Hsi-Wen Liu, Ting-Chang Chang, Jyun-Yu Tsai, Ching-En Chen, Kuan-Ju Liu, Ying-Hsin Lu, Chien-Yu Lin, Tseung-Yuen Tseng, Osbert Cheng, Cheng-Tung Huang, Yi-Han Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 173504 (2016)
https://doi.org/10.1063/1.4947439
Published: April 2016
View articletitled, Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate
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Journal Articles

A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

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Tsung-Ling Tsai, Hsiang-Yu Chang, Jesse Jen-Chung Lou, Tseung-Yuen Tseng
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 153505 (2016)
https://doi.org/10.1063/1.4946006
Published: April 2016
View articletitled, A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure
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Journal Articles

A numerical study of multi filament formation in metal-ion based CBRAM

Open Access
Dan Berco, Tseung-Yuen Tseng
Journal: AIP Advances
AIP Advances 6, 025212 (2016)
https://doi.org/10.1063/1.4942209
Published: February 2016
View articletitled, A numerical study of multi filament formation in metal-ion based CBRAM
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Journal Articles

A stochastic simulation method for the assessment of resistive random access memory retention reliability

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Dan Berco, Tseung-Yuen Tseng
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 253504 (2015)
https://doi.org/10.1063/1.4938210
Published: December 2015
View articletitled, A stochastic simulation method for the assessment of resistive random access memory retention reliability
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Journal Articles

Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture

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Umesh Chand, Chun-Yang Huang, Dayanand Kumar, Tseung-Yuen Tseng
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 203502 (2015)
https://doi.org/10.1063/1.4935862
Published: November 2015
View articletitled, Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture
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Journal Articles

Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming

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Firman Mangasa Simanjuntak, Debashis Panda, Tsung-Ling Tsai, Chun-An Lin, Kung-Hwa Wei, Tseung-Yuen Tseng
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 033505 (2015)
https://doi.org/10.1063/1.4927284
Published: July 2015
View articletitled, Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming
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