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Journal Articles

Competition between ion beam sputtering and self-organization of point defects for surface nanostructuring on germanium

Naoto Oishi, Tatsuya Yasuoka, Toshiyuki Kawaharamura, Noriko Nitta

J. Vac. Sci. Technol. A 41, 063101 (2023)

https://doi.org/10.1116/6.0002878

Published: September 2023

View article titled, Competition between ion beam sputtering and self-organization of point defects for surface nanostructuring on germanium

Includes: Supplementary data

Journal Articles

The effect of HCl on the α-Ga₂O₃ thin films fabricated by third generation mist chemical vapor deposition

Tatsuya Yasuoka, Li Liu, Tamako Ozaki, Kanta Asako, Yuna Ishikawa, Miyabi Fukue, Giang T. Dang, Toshiyuki Kawaharamura

AIP Advances 11, 045123 (2021)

https://doi.org/10.1063/5.0051050

Published: April 2021

View article titled, The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition

Includes: Supplementary data

Journal Articles

Conductive Si-doped α-(Al_xGa_1−x)₂O₃ thin films with the bandgaps up to 6.22 eV

Giang T. Dang, Yuki Tagashira, Tatsuya Yasuoka, Li Liu, Toshiyuki Kawaharamura

AIP Advances 10, 115019 (2020)

https://doi.org/10.1063/5.0026095

Published: November 2020

View article titled, Conductive Si-doped α-(AlxGa1−x)2O3 thin films with the bandgaps up to 6.22 eV

Includes: Supplementary data

Journal Articles

α -(Al_xGa_1−x)₂O₃ single-layer and heterostructure buffers for the growth of conductive Sn-doped α -Ga₂O₃ thin films via mist chemical vapor deposition

Giang T. Dang, Shota Sato, Yuki Tagashira, Tatsuya Yasuoka, Li Liu, Toshiyuki Kawaharamura

APL Mater. 8, 101101 (2020)

https://doi.org/10.1063/5.0023041

Published: October 2020

View article titled, α -(AlxGa1−x)2O3 single-layer and heterostructure buffers for the growth of conductive Sn-doped α -Ga2O3 thin films via mist chemical vapor deposition

Includes: Supplementary data

Journal Articles

Atmospheric-pressure epitaxial growth technique of a multiple quantum well by mist chemical vapor deposition based on Leidenfrost droplets

Toshiyuki Kawaharamura (川原村敏幸), Giang T. Dang, Noriko Nitta (新田紀子)

Appl. Phys. Lett. 109, 151603 (2016)

https://doi.org/10.1063/1.4964647

Published: October 2016

View article titled, Atmospheric-pressure epitaxial growth technique of a multiple quantum well by mist chemical vapor deposition based on Leidenfrost droplets

Journal Articles

Stability of In-Ga-Zn-O metal-semiconductor field-effect-transistors under bias, illumination, and temperature stress

Giang T. Dang, Toshiyuki Kawaharamura, Mamoru Furuta, Saurabh Saxena, Martin W. Allen

Appl. Phys. Lett. 107, 143504 (2015)

https://doi.org/10.1063/1.4931960

Published: October 2015

View article titled, Stability of In-Ga-Zn-O metal-semiconductor field-effect-transistors under bias, illumination, and temperature stress

Journal Articles

Growth and electrical properties of AlO_x grown by mist chemical vapor deposition

Toshiyuki Kawaharamura (川原村敏幸), Takayuki Uchida (内田貴之), Masaru Sanada (眞田克), Mamoru Furuta (古田守)

AIP Advances 3, 032135 (2013)

https://doi.org/10.1063/1.4798303

Published: March 2013

View article titled, Growth and electrical properties of AlOx grown by mist chemical vapor deposition

Journal Articles

Pulsed laser excitation power dependence of photoluminescence peak energies in bulk ZnO

Giang T. Dang, Hiroshi Kanbe, Toshiyuki Kawaharamura, Masafumi Taniwaki

J. Appl. Phys. 110, 083508 (2011)

https://doi.org/10.1063/1.3653273

Published: October 2011

View article titled, Pulsed laser excitation power dependence of photoluminescence peak energies in bulk ZnO

Journal Articles

Influence of sputtering pressure on band gap of Zn_1−xMg_xO thin films prepared by radio frequency magnetron sputtering

Dapeng Wang, Tadashi Narusawa, Toshiyuki Kawaharamura, Mamoru Furuta, Chaoyang Li

J. Vac. Sci. Technol. B 29, 051205 (2011)

https://doi.org/10.1116/1.3622316

Published: August 2011

View article titled, Influence of sputtering pressure on band gap of Zn1−xMgxO thin films prepared by radio frequency magnetron sputtering

Journal Articles

Photoluminescence, morphology, and structure of hydrothermal ZnO implanted at room temperature with 60 keV Sn⁺ ions

Giang T. Dang, Toshiyuki Kawaharamura, Noriko Nitta, Takashi Hirao, Toshimasa Yoshiie, Masafumi Taniwaki

J. Appl. Phys. 109, 123516 (2011)

https://doi.org/10.1063/1.3598068

Published: June 2011

View article titled, Photoluminescence, morphology, and structure of hydrothermal ZnO implanted at room temperature with 60 keV Sn+ ions

Journal Articles

Characteristics of ZnO Wafers Implanted with 60 keV Sn + Ions at Room Temperature and at 110 K

Giang T. Dang, Toshiyuki Kawaharamura, Takashi Hirao, Noriko Nitta, Masafumi Taniwaki

AIP Conf. Proc. 1321, 270–273 (2011)

https://doi.org/10.1063/1.3548372

Published: January 2011

View article titled, Characteristics of ZnO Wafers Implanted with 60 keV Sn + Ions at Room Temperature and at 110 K

Journal Articles

Comparison of structural and photoluminescence properties of zinc oxide nanostructures influenced by gas ratio and substrate bias during radio frequency sputtering

Chaoyang Li, Tokiyoshi Matsuda, Toshiyuki Kawaharamura, Hiroshi Furuta, Mamoru Furuta, Takahiro Hiramatsu, Takashi Hirao, Yoichiro Nakanishi, Keiji Ichinomiya

J. Vac. Sci. Technol. B 28, C2B51–C2B55 (2010)

https://doi.org/10.1116/1.3271250

Published: March 2010

View article titled, Comparison of structural and photoluminescence properties of zinc oxide nanostructures influenced by gas ratio and substrate bias during radio frequency sputtering

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Topics

Competition between ion beam sputtering and self-organization of point defects for surface nanostructuring on germanium

The effect of HCl on the α-Ga₂O₃ thin films fabricated by third generation mist chemical vapor deposition

Conductive Si-doped α-(Al_xGa_1−x)₂O₃ thin films with the bandgaps up to 6.22 eV

α -(Al_xGa_1−x)₂O₃ single-layer and heterostructure buffers for the growth of conductive Sn-doped α -Ga₂O₃ thin films via mist chemical vapor deposition

Atmospheric-pressure epitaxial growth technique of a multiple quantum well by mist chemical vapor deposition based on Leidenfrost droplets

Stability of In-Ga-Zn-O metal-semiconductor field-effect-transistors under bias, illumination, and temperature stress

Growth and electrical properties of AlO_x grown by mist chemical vapor deposition

Pulsed laser excitation power dependence of photoluminescence peak energies in bulk ZnO

Influence of sputtering pressure on band gap of Zn_1−xMg_xO thin films prepared by radio frequency magnetron sputtering

Photoluminescence, morphology, and structure of hydrothermal ZnO implanted at room temperature with 60 keV Sn⁺ ions

Characteristics of ZnO Wafers Implanted with 60 keV Sn + Ions at Room Temperature and at 110 K

Comparison of structural and photoluminescence properties of zinc oxide nanostructures influenced by gas ratio and substrate bias during radio frequency sputtering

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