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Toshikazu Nishida
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Journal Articles

Preisach modeling of imprint on hafnium zirconium oxide ferroelectric capacitors

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Paul Chojecki, Glen Walters, Zane Forrester, Toshikazu Nishida
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 094102 (2021)
https://doi.org/10.1063/5.0053185
Published: September 2021
View articletitled, Preisach modeling of imprint on hafnium zirconium oxide ferroelectric capacitors
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Includes: Supplementary data
Journal Articles

Thermal retention of atomic layer deposited Hf0.5Zr0.52 films using H2O and O2–H2 plasma oxidation methods

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Glen Walters, Paul Chojecki, Zane Forrester, Toshikazu Nishida
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 032904 (2021)
https://doi.org/10.1063/5.0035733
Published: January 2021
View articletitled, Thermal retention of atomic layer deposited Hf0.5Zr0.52 films using H2O and O2–H2 plasma oxidation methods
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Includes: Supplementary data
Journal Articles

Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films

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Glen Walters, Aniruddh Shekhawat, Saeed Moghaddam, Jacob L. Jones, Toshikazu Nishida
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 032901 (2020)
https://doi.org/10.1063/1.5135709
Published: January 2020
View articletitled, Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
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Includes: Supplementary data
Journal Articles

Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates

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Glen Walters, Aniruddh Shekhawat, Nicholas G. Rudawski, Saeed Moghaddam, Toshikazu Nishida
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 192901 (2018)
https://doi.org/10.1063/1.5027516
Published: May 2018
View articletitled, Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates
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Journal Articles

Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors

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Patrick D. Lomenzo, Ching-Chang Chung, Chuanzhen Zhou, Jacob L. Jones, Toshikazu Nishida
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 232904 (2017)
https://doi.org/10.1063/1.4985297
Published: June 2017
View articletitled, Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors
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Journal Articles

Mixed Al and Si doping in ferroelectric HfO2 thin films

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Patrick D. Lomenzo, Qanit Takmeel, Chuanzhen Zhou, Ching-Chang Chung, Saeed Moghaddam, Jacob L. Jones, Toshikazu Nishida
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 242903 (2015)
https://doi.org/10.1063/1.4937588
Published: December 2015
View articletitled, Mixed Al and Si doping in ferroelectric HfO2 thin films
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Journal Articles

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

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Patrick D. Lomenzo, Qanit Takmeel, Chuanzhen Zhou, Chris M. Fancher, Eric Lambers, Nicholas G. Rudawski, Jacob L. Jones, Saeed Moghaddam, Toshikazu Nishida
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 134105 (2015)
https://doi.org/10.1063/1.4916715
Published: April 2015
View articletitled, TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
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Journal Articles

The effects of layering in ferroelectric Si-doped HfO2 thin films

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Patrick D. Lomenzo, Qanit Takmeel, Chuanzhen Zhou, Yang Liu, Chris M. Fancher, Jacob L. Jones, Saeed Moghaddam, Toshikazu Nishida
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 072906 (2014)
https://doi.org/10.1063/1.4893738
Published: August 2014
View articletitled, The effects of layering in ferroelectric Si-doped HfO2 thin films
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Includes: Supplementary data
Journal Articles

Mechanical stress effects on Pb(Zr,Ti)O3 thin-film ferroelectric capacitors embedded in a standard complementary metal-oxide-semiconductor process

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Antonio G. Acosta, John A. Rodriguez, Toshikazu Nishida
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 222908 (2014)
https://doi.org/10.1063/1.4881596
Published: June 2014
View articletitled, Mechanical stress effects on Pb(Zr,Ti)O3 thin-film ferroelectric capacitors embedded in a standard complementary metal-oxide-semiconductor process
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Journal Articles

Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes

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Patrick D. Lomenzo, Peng Zhao, Qanit Takmeel, Saeed Moghaddam, Toshikazu Nishida, Matthew Nelson, Chris M. Fancher, Everett D. Grimley, Xiahan Sang, James M. LeBeau, Jacob L. Jones
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 03D123 (2014)
https://doi.org/10.1116/1.4873323
Published: April 2014
View articletitled, Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
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Journal Articles

Crystal structure of Si-doped HfO2

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Lili Zhao, Matthew Nelson, Henry Aldridge, Thanakorn Iamsasri, Chris M. Fancher, Jennifer S. Forrester, Toshikazu Nishida, Saeed Moghaddam, Jacob L. Jones
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 034104 (2014)
https://doi.org/10.1063/1.4861733
Published: January 2014
View articletitled, Crystal structure of Si-doped HfO2
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Includes: Supplementary data
Journal Articles

Process dependence of 1/f noise and defects in ion implanted p-type piezoresistors

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Robert Dieme, Jack Zhang, Nicholas G. Rudawski, Kevin Jones, Gijs Bosman, Mark Sheplak, Toshikazu Nishida
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 033702 (2012)
https://doi.org/10.1063/1.4740221
Published: August 2012
View articletitled, Process dependence of 1/f noise and defects in ion implanted p-type piezoresistors
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Journal Articles

Physical insights on comparable electron transport in (100) and (110) double-gate fin field-effect transistors

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Mehmet O. Baykan, Chadwin D. Young, Kerem Akarvardar, Prashant Majhi, Chris Hobbs, Paul Kirsch, Raj Jammy, Scott E. Thompson, Toshikazu Nishida
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 123502 (2012)
https://doi.org/10.1063/1.3696038
Published: March 2012
View articletitled, Physical insights on comparable electron transport in (100) and (110) double-gate fin field-effect transistors
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Journal Articles

Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors

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Xiaodong Yang, Younsung Choi, Jisong Lim, Toshikazu Nishida, Scott Thompson
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 014511 (2011)
https://doi.org/10.1063/1.3603023
Published: July 2011
View articletitled, Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors
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Journal Articles

Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility

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Min Chu, Andrew D. Koehler, Amit Gupta, Toshikazu Nishida, Scott E. Thompson
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 104502 (2010)
https://doi.org/10.1063/1.3500465
Published: November 2010
View articletitled, Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility
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Journal Articles

Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon

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Mehmet O. Baykan, Scott E. Thompson, Toshikazu Nishida
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 093716 (2010)
https://doi.org/10.1063/1.3488635
Published: November 2010
View articletitled, Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon
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Journal Articles

Acoustic energy harvesting using an electromechancal Helmholtz resonator.

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Fei Liu, Alex Phipps, Stephen Horowitz, Louis Cattafesta, Toshikazu Nishida, Mark Sheplak
Journal: The Journal of the Acoustical Society of America
J. Acoust. Soc. Am. 125, 2596 (2009)
https://doi.org/10.1121/1.4783879
Published: April 2009
View articletitled, Acoustic energy harvesting using an electromechancal Helmholtz resonator.
Journal Articles

Effect of mechanical strain on 1 / f noise in metal-oxide semiconductor field-effect transistors

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Ji-Song Lim, Antonio Acosta, Scott E. Thompson, Gijs Bosman, Eddy Simoen, Toshikazu Nishida
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 054504 (2009)
https://doi.org/10.1063/1.3080127
Published: March 2009
View articletitled, Effect of mechanical strain on 1 / f noise in metal-oxide semiconductor field-effect transistors
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Journal Articles

Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown

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Youn Sung Choi, Hyunwoo Park, Toshikazu Nishida, Scott E. Thompson
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 044503 (2009)
https://doi.org/10.1063/1.3074299
Published: February 2009
View articletitled, Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown
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Journal Articles

Demonstration of a wireless, self-powered, electroacoustic liner system

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Alex Phipps, Fei Liu, Louis Cattafesta, Mark Sheplak, Toshikazu Nishida
Journal: The Journal of the Acoustical Society of America
J. Acoust. Soc. Am. 125, 873–881 (2009)
https://doi.org/10.1121/1.3050287
Published: February 2009
View articletitled, Demonstration of a wireless, self-powered, electroacoustic liner system
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