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Journal Articles

Impact of deposition temperature on electrical properties of HZO-based FeRAM

Open Access
Yu-Hsuan Yeh, Yung-Fang Tan, Yen-Che Huang, Chao Cheng Lin, Chung-Wei Wu, Yong-Ci Zhang, Ya-Huan Lee, Ting-Chang Chang, Simon M. Sze
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 064102 (2024)
https://doi.org/10.1063/5.0184841
Published: February 2024
View articletitled, Impact of deposition temperature on electrical properties of HZO-based FeRAM
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Journal Articles

A solid-state semiconductor battery with silica-coated TiO2 core–shell energy storage nanoparticles for rechargeable device application

Open Access
Min-Chuan Wang, Bo-Hsien Wu, Shang-En Liu, Yu-Chen Li, Shih-Kai Lin, Tsung-Ming Tsai, Ting-Chang Chang
Journal: AIP Advances
AIP Advances 13, 095011 (2023)
https://doi.org/10.1063/5.0157072
Published: September 2023
View articletitled, A solid-state semiconductor battery with silica-coated TiO2 core–shell energy storage nanoparticles for rechargeable device application
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Journal Articles

Channel migration of dual channel a-InGaZnO TFTs under negative bias illumination stress

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Han-Yu Chang, Ting-Chang Chang, Mao-Chou Tai, Bo-Shen Huang, Kuan-Ju Zhou, Yu-Bo Wang, Hung-Ming Kuo, Jen-Wei Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 123504 (2023)
https://doi.org/10.1063/5.0135302
Published: March 2023
View articletitled, Channel migration of dual channel a-InGaZnO TFTs under negative bias illumination stress
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Journal Articles

Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate

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Ting-Tzu Kuo, Ying-Chung Chen, Ting-Chang Chang, Mao-Chou Tai, Yu-Xuan Wang, Kuan-Hsu Chen, Yu-Shan Lin, Fong-Min Ciou, Fu-Yuan Jin, Kai-Chun Chang, Wei-Chun Hung, Yen-Cheng Chang, Chien-Hung Yeh
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 233505 (2022)
https://doi.org/10.1063/5.0090133
Published: June 2022
View articletitled, Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate
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Journal Articles

Improved uniformity and threshold voltage in NbOx-ZrO2 selectors

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Ao Chen, Yuli He, Guokun Ma, Ziqi Zhang, Jie Ji, Jingshu Wan, Jianqiang Zhang, Houzhao Wan, Li Tao, Yiheng Rao, Liangpin Shen, Hanbin Wang, Jun Zhang, Yi Wang, Ting-Chang Chang, Peter A. van Aken, Hao Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 073503 (2021)
https://doi.org/10.1063/5.0045257
Published: August 2021
View articletitled, Improved uniformity and threshold voltage in NbOx-ZrO2 selectors
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Includes: Supplementary data
Journal Articles

Analysis of increase in forward transconductance to determine the critical point of polarization at ferroelectric 1T1C memory

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Kai-Chun Chang, Po-Hsun Chen, Ting-Chang Chang, Chien-Hung Yeh, Yun-Hsuan Lin, Yen-Cheng Chang, Wen-Chung Chen, Yung‐Fang Tan, Chung-Wei Wu, Simon Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 202902 (2021)
https://doi.org/10.1063/5.0049755
Published: May 2021
View articletitled, Analysis of increase in forward transconductance to determine the critical point of polarization at ferroelectric 1T1C memory
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Journal Articles

Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices

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Yun-Hsuan Lin, Wen-Chung Chen, Po-Hsun Chen, Chih-Yang Lin, Kai-Chun Chang, Yen-Cheng Chang, Chien-Hung Yeh, Chein-Yu Lin, Fu-Yuan Jin, Kuan-Hsu Chen, Ting-Tzu Kuo, Wei-Chieh Hung, Ya-Huan Lee, Jia-Hong Lin, Ting-Chang Chang
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 023502 (2020)
https://doi.org/10.1063/5.0012679
Published: July 2020
View articletitled, Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices
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Journal Articles

Solution-processed amorphous Ga2O3:CdO TFT-type deep-UV photodetectors

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Xi Xiao, Lingyan Liang, Yu Pei, Jiahuan Yu, Hongxiao Duan, Ting-Chang Chang, Hongtao Cao
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 192102 (2020)
https://doi.org/10.1063/5.0007617
Published: May 2020
View articletitled, Solution-processed amorphous Ga2O3:CdO TFT-type deep-UV photodetectors
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Includes: Supplementary data
Journal Articles

Floating top gate-induced output enhancement of a-InGaZnO thin film transistors under single gate operations

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Mao-Chou Tai, Ting-Chang Chang, Ming-Chen Chen, Hsiao-Cheng Chiang, Yu-Ching Tsao, Yu-Chieh Chien, Yu-Xuan Wang, Yu-Lin Tsai, Jian-Jie Chen, Shengdong Zhang, Hsi-Ming Chang
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 173501 (2018)
https://doi.org/10.1063/1.5042617
Published: October 2018
View articletitled, Floating top gate-induced output enhancement of a-InGaZnO thin film transistors under single gate operations
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Journal Articles

Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory

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Yi-Ting Tseng, I-Chieh Chen, Ting-Chang Chang, J. C. Huang, Chih-Cheng Shih, Hao-Xuan Zheng, Wen-Chung Chen, Ming-Hui Wang, Wei-Chen Huang, Min-Chen Chen, Xiao-Hua Ma, Yue Hao, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 053501 (2018)
https://doi.org/10.1063/1.5023527
Published: July 2018
View articletitled, Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory
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Includes: Supplementary data
Journal Articles

Model of dielectric breakdown in hafnia-based ferroelectric capacitors

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Kan-Hao Xue, Hai-Lei Su, Yi Li, Hua-Jun Sun, Wei-Fan He, Ting-Chang Chang, Lin Chen, David Wei Zhang, Xiang-Shui Miao
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 024103 (2018)
https://doi.org/10.1063/1.5031491
Published: July 2018
View articletitled, Model of dielectric breakdown in hafnia-based ferroelectric capacitors
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Journal Articles

Tuning the nanostructures and optical properties of undoped and N-doped ZnO by supercritical fluid treatment

Open Access
Yaping Li, Hui-Qiong Wang, Tian-Jian Chu, Yu-Chiuan Li, Xiaojun Li, Xiaxia Liao, Xiaodan Wang, Hua Zhou, Junyong Kang, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Jin-Cheng Zheng
Journal: AIP Advances
AIP Advances 8, 055310 (2018)
https://doi.org/10.1063/1.5026446
Published: May 2018
View articletitled, Tuning the nanostructures and optical properties of undoped and N-doped ZnO by supercritical fluid treatment
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Includes: Supplementary data
Journal Articles

Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors

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Hsiao-Cheng Chiang, Ting-Chang Chang, Po-Yung Liao, Bo-Wei Chen, Yu-Ching Tsao, Tsung-Ming Tsai, Yu-Chieh Chien, Yi-Chieh Yang, Kuan-Fu Chen, Chung-I Yang, Yu-Ju Hung, Kuan-Chang Chang, Sheng-Dong Zhang, Sung-Chun Lin, Cheng-Yen Yeh
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 133504 (2017)
https://doi.org/10.1063/1.5004526
Published: September 2017
View articletitled, Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors
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Journal Articles

H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress

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Jianwen Yang, Po-Yung Liao, Ting-Chang Chang, Hsiao-Cheng Chiang, Bo-Wei Chen, Yu-Chieh Chien, Dong Lin, Jinhua Ren, Ruofan Fu, Mingyue Qu, Shubin Pi, Yanbing Han, Haoqing Kang, Qun Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 073506 (2017)
https://doi.org/10.1063/1.4999923
Published: August 2017
View articletitled, H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress
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Journal Articles

Impact of repeated uniaxial mechanical strain on flexible a-IGZO thin film transistors with symmetric and asymmetric structures

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Po-Yung Liao, Ting-Chang Chang, Wan-Ching Su, Bo-Wei Chen, Li-Hui Chen, Tien-Yu Hsieh, Chung-Yi Yang, Kuan-Chang Chang, Sheng-Dong Zhang, Yen-Yu Huang, Hsi-Ming Chang, Shin-Chuan Chiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 263505 (2017)
https://doi.org/10.1063/1.4990964
Published: June 2017
View articletitled, Impact of repeated uniaxial mechanical strain on flexible a-IGZO thin film transistors with symmetric and asymmetric structures
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Journal Articles

The effect of device electrode geometry on performance after hot-carrier stress in amorphous In-Ga-Zn-O thin film transistors with different via-contact structures

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Po-Yung Liao, Ting-Chang Chang, Yu-Jia Chen, Wan-Ching Su, Bo-Wei Chen, Li-Hui Chen, Tien-Yu Hsieh, Chung-Yi Yang, Kuan-Chang Chang, Sheng-Dong Zhang, Yen-Yu Huang, Hsi-Ming Chang, Shin-Chuan Chiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 202103 (2017)
https://doi.org/10.1063/1.4983713
Published: May 2017
View articletitled, The effect of device electrode geometry on performance after hot-carrier stress in amorphous In-Ga-Zn-O thin film transistors with different via-contact structures
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Journal Articles

Publisher's Note: “The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors” [Appl. Phys. Lett. 110 , 103502 (2017)]

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Wan-Ching Su, Ting-Chang Chang, Po-Yung Liao, Yu-Jia Chen, Bo-Wei Chen, Tien-Yu Hsieh, Chung-I Yang, Yen-Yu Huang, Hsi-Ming Chang, Shin-Chuan Chiang, Kuan-Chang Chang, Tsung-Ming Tsai
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 159901 (2017)
https://doi.org/10.1063/1.4979076
Published: April 2017
View articletitled, Publisher's Note: “The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors” [Appl. Phys. Lett. 110 , 103502 (2017)]
Open the PDF for Publisher's Note: “The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors” [Appl. Phys. Lett. 110 , 103502 (2017)] in another window
Journal Articles

Investigation of an anomalous hump phenomenon in via-type amorphous In-Ga-Zn-O thin-film transistors under positive bias temperature stress

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Jianwen Yang, Po-Yung Liao, Ting-Chang Chang, Bo-Wei Chen, Hui-Chun Huang, Wan-Ching Su, Hsiao-Cheng Chiang, Qun Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 143508 (2017)
https://doi.org/10.1063/1.4979870
Published: April 2017
View articletitled, Investigation of an anomalous hump phenomenon in via-type amorphous In-Ga-Zn-O thin-film transistors under positive bias temperature stress
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Journal Articles

The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors

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Wan-Ching Su, Ting-Chang Chang, Po-Yung Liao, Yu-Jia Chen, Bo-Wei Chen, Tien-Yu Hsieh, Chung-I Yang, Yen-Yu Huang, Hsi-Ming Chang, Shin-Chuan Chiang, Kuan-Chang Chang, Tsung-Ming Tsai
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 103502 (2017)
https://doi.org/10.1063/1.4975206
Published: March 2017
View articletitled, The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors
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Journal Articles

Competing weak localization and weak antilocalization in amorphous indium–gallium–zinc-oxide thin-film transistors

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Wei-Hsiang Wang, Syue-Ru Lyu, Elica Heredia, Shu-Hao Liu, Pei-hsun Jiang, Po-Yung Liao, Ting-Chang Chang, Hua-Mao Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 022106 (2017)
https://doi.org/10.1063/1.4974080
Published: January 2017
View articletitled, Competing weak localization and weak antilocalization in amorphous indium–gallium–zinc-oxide thin-film transistors
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