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Journal Articles

Impact of deposition temperature on electrical properties of HZO-based FeRAM

Yu-Hsuan Yeh, Yung-Fang Tan, Yen-Che Huang, Chao Cheng Lin, Chung-Wei Wu, Yong-Ci Zhang, Ya-Huan Lee, Ting-Chang Chang, Simon M. Sze
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 064102 (2024)
https://doi.org/10.1063/5.0184841
Published: February 2024
View article titled, Impact of deposition temperature on electrical properties of HZO-based FeRAM
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Journal Articles

A solid-state semiconductor battery with silica-coated TiO2 core–shell energy storage nanoparticles for rechargeable device application

Min-Chuan Wang, Bo-Hsien Wu, Shang-En Liu, Yu-Chen Li, Shih-Kai Lin, Tsung-Ming Tsai, Ting-Chang Chang
Journal: AIP Advances
AIP Advances 13, 095011 (2023)
https://doi.org/10.1063/5.0157072
Published: September 2023
View article titled, A solid-state semiconductor battery with silica-coated TiO<sub>2</sub> core–shell energy storage nanoparticles for rechargeable device application
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Journal Articles

Channel migration of dual channel a-InGaZnO TFTs under negative bias illumination stress

Han-Yu Chang, Ting-Chang Chang, Mao-Chou Tai, Bo-Shen Huang, Kuan-Ju Zhou, Yu-Bo Wang, Hung-Ming Kuo, Jen-Wei Huang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 123504 (2023)
https://doi.org/10.1063/5.0135302
Published: March 2023
View article titled, Channel migration of dual channel a-InGaZnO TFTs under negative bias illumination stress
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Journal Articles

Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate

Ting-Tzu Kuo, Ying-Chung Chen, Ting-Chang Chang, Mao-Chou Tai, Yu-Xuan Wang, Kuan-Hsu Chen, Yu-Shan Lin, Fong-Min Ciou, Fu-Yuan Jin, Kai-Chun Chang, Wei-Chun Hung, Yen-Cheng Chang, Chien-Hung Yeh
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 233505 (2022)
https://doi.org/10.1063/5.0090133
Published: June 2022
View article titled, Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate
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Journal Articles

Improved uniformity and threshold voltage in NbOx-ZrO2 selectors

Ao Chen, Yuli He, Guokun Ma, Ziqi Zhang, Jie Ji, Jingshu Wan, Jianqiang Zhang, Houzhao Wan, Li Tao, Yiheng Rao, Liangpin Shen, Hanbin Wang, Jun Zhang, Yi Wang, Ting-Chang Chang, Peter A. van Aken, Hao Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 073503 (2021)
https://doi.org/10.1063/5.0045257
Published: August 2021
View article titled, Improved uniformity and threshold voltage in NbO<sub>x</sub>-ZrO<sub>2</sub> selectors
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Includes: Supplementary data
Journal Articles

Analysis of increase in forward transconductance to determine the critical point of polarization at ferroelectric 1T1C memory

Kai-Chun Chang, Po-Hsun Chen, Ting-Chang Chang, Chien-Hung Yeh, Yun-Hsuan Lin, Yen-Cheng Chang, Wen-Chung Chen, Yung‐Fang Tan, Chung-Wei Wu, Simon Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 202902 (2021)
https://doi.org/10.1063/5.0049755
Published: May 2021
View article titled, Analysis of increase in forward transconductance to determine the critical point of polarization at ferroelectric 1T1C memory
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Journal Articles

Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices

Yun-Hsuan Lin, Wen-Chung Chen, Po-Hsun Chen, Chih-Yang Lin, Kai-Chun Chang, Yen-Cheng Chang, Chien-Hung Yeh, Chein-Yu Lin, Fu-Yuan Jin, Kuan-Hsu Chen, Ting-Tzu Kuo, Wei-Chieh Hung, Ya-Huan Lee, Jia-Hong Lin, Ting-Chang Chang
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 023502 (2020)
https://doi.org/10.1063/5.0012679
Published: July 2020
View article titled, Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices
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Journal Articles

Solution-processed amorphous Ga2O3:CdO TFT-type deep-UV photodetectors

Xi Xiao, Lingyan Liang, Yu Pei, Jiahuan Yu, Hongxiao Duan, Ting-Chang Chang, Hongtao Cao
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 192102 (2020)
https://doi.org/10.1063/5.0007617
Published: May 2020
View article titled, Solution-processed amorphous Ga<sub>2</sub>O<sub>3</sub>:CdO TFT-type deep-UV photodetectors
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Includes: Supplementary data
Journal Articles

Floating top gate-induced output enhancement of a-InGaZnO thin film transistors under single gate operations

Mao-Chou Tai, Ting-Chang Chang, Ming-Chen Chen, Hsiao-Cheng Chiang, Yu-Ching Tsao, Yu-Chieh Chien, Yu-Xuan Wang, Yu-Lin Tsai, Jian-Jie Chen, Shengdong Zhang, Hsi-Ming Chang
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 173501 (2018)
https://doi.org/10.1063/1.5042617
Published: October 2018
View article titled, Floating top gate-induced output enhancement of a-InGaZnO thin film transistors under single gate operations
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Journal Articles

Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory

Yi-Ting Tseng, I-Chieh Chen, Ting-Chang Chang, J. C. Huang, Chih-Cheng Shih, Hao-Xuan Zheng, Wen-Chung Chen, Ming-Hui Wang, Wei-Chen Huang, Min-Chen Chen, Xiao-Hua Ma, Yue Hao, Simon M. Sze
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 053501 (2018)
https://doi.org/10.1063/1.5023527
Published: July 2018
View article titled, Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory
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Includes: Supplementary data
Journal Articles

Model of dielectric breakdown in hafnia-based ferroelectric capacitors

Editor’s Pick
Kan-Hao Xue, Hai-Lei Su, Yi Li, Hua-Jun Sun, Wei-Fan He, Ting-Chang Chang, Lin Chen, David Wei Zhang, Xiang-Shui Miao
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 024103 (2018)
https://doi.org/10.1063/1.5031491
Published: July 2018
View article titled, Model of dielectric breakdown in hafnia-based ferroelectric capacitors
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Journal Articles

Tuning the nanostructures and optical properties of undoped and N-doped ZnO by supercritical fluid treatment

Yaping Li, Hui-Qiong Wang, Tian-Jian Chu, Yu-Chiuan Li, Xiaojun Li, Xiaxia Liao, Xiaodan Wang, Hua Zhou, Junyong Kang, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Jin-Cheng Zheng
Journal: AIP Advances
AIP Advances 8, 055310 (2018)
https://doi.org/10.1063/1.5026446
Published: May 2018
View article titled, Tuning the nanostructures and optical properties of undoped and N-doped ZnO by supercritical fluid treatment
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Includes: Supplementary data
Journal Articles

Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors

Hsiao-Cheng Chiang, Ting-Chang Chang, Po-Yung Liao, Bo-Wei Chen, Yu-Ching Tsao, Tsung-Ming Tsai, Yu-Chieh Chien, Yi-Chieh Yang, Kuan-Fu Chen, Chung-I Yang, Yu-Ju Hung, Kuan-Chang Chang, Sheng-Dong Zhang, Sung-Chun Lin, Cheng-Yen Yeh
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 133504 (2017)
https://doi.org/10.1063/1.5004526
Published: September 2017
View article titled, Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors
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Journal Articles

H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress

Jianwen Yang, Po-Yung Liao, Ting-Chang Chang, Hsiao-Cheng Chiang, Bo-Wei Chen, Yu-Chieh Chien, Dong Lin, Jinhua Ren, Ruofan Fu, Mingyue Qu, Shubin Pi, Yanbing Han, Haoqing Kang, Qun Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 073506 (2017)
https://doi.org/10.1063/1.4999923
Published: August 2017
View article titled, H<sub>2</sub>O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress
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Journal Articles

Impact of repeated uniaxial mechanical strain on flexible a-IGZO thin film transistors with symmetric and asymmetric structures

Po-Yung Liao, Ting-Chang Chang, Wan-Ching Su, Bo-Wei Chen, Li-Hui Chen, Tien-Yu Hsieh, Chung-Yi Yang, Kuan-Chang Chang, Sheng-Dong Zhang, Yen-Yu Huang, Hsi-Ming Chang, Shin-Chuan Chiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 263505 (2017)
https://doi.org/10.1063/1.4990964
Published: June 2017
View article titled, Impact of repeated uniaxial mechanical strain on flexible a-IGZO thin film transistors with symmetric and asymmetric structures
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Journal Articles

The effect of device electrode geometry on performance after hot-carrier stress in amorphous In-Ga-Zn-O thin film transistors with different via-contact structures

Po-Yung Liao, Ting-Chang Chang, Yu-Jia Chen, Wan-Ching Su, Bo-Wei Chen, Li-Hui Chen, Tien-Yu Hsieh, Chung-Yi Yang, Kuan-Chang Chang, Sheng-Dong Zhang, Yen-Yu Huang, Hsi-Ming Chang, Shin-Chuan Chiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 202103 (2017)
https://doi.org/10.1063/1.4983713
Published: May 2017
View article titled, The effect of device electrode geometry on performance after hot-carrier stress in amorphous In-Ga-Zn-O thin film transistors with different via-contact structures
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Journal Articles

Publisher's Note: “The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors” [Appl. Phys. Lett. 110 , 103502 (2017)]

Wan-Ching Su, Ting-Chang Chang, Po-Yung Liao, Yu-Jia Chen, Bo-Wei Chen, Tien-Yu Hsieh, Chung-I Yang, Yen-Yu Huang, Hsi-Ming Chang, Shin-Chuan Chiang, Kuan-Chang Chang, Tsung-Ming Tsai
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 159901 (2017)
https://doi.org/10.1063/1.4979076
Published: April 2017
View article titled, Publisher's Note: “The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors” [Appl. Phys. Lett. 110 , 103502 (2017)]
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Journal Articles

Investigation of an anomalous hump phenomenon in via-type amorphous In-Ga-Zn-O thin-film transistors under positive bias temperature stress

Jianwen Yang, Po-Yung Liao, Ting-Chang Chang, Bo-Wei Chen, Hui-Chun Huang, Wan-Ching Su, Hsiao-Cheng Chiang, Qun Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 143508 (2017)
https://doi.org/10.1063/1.4979870
Published: April 2017
View article titled, Investigation of an anomalous hump phenomenon in via-type amorphous In-Ga-Zn-O thin-film transistors under positive bias temperature stress
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Journal Articles

The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors

Wan-Ching Su, Ting-Chang Chang, Po-Yung Liao, Yu-Jia Chen, Bo-Wei Chen, Tien-Yu Hsieh, Chung-I Yang, Yen-Yu Huang, Hsi-Ming Chang, Shin-Chuan Chiang, Kuan-Chang Chang, Tsung-Ming Tsai
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 103502 (2017)
https://doi.org/10.1063/1.4975206
Published: March 2017
View article titled, The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors
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Journal Articles

Competing weak localization and weak antilocalization in amorphous indium–gallium–zinc-oxide thin-film transistors

Wei-Hsiang Wang, Syue-Ru Lyu, Elica Heredia, Shu-Hao Liu, Pei-hsun Jiang, Po-Yung Liao, Ting-Chang Chang, Hua-Mao Chen
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 022106 (2017)
https://doi.org/10.1063/1.4974080
Published: January 2017
View article titled, Competing weak localization and weak antilocalization in amorphous indium–gallium–zinc-oxide thin-film transistors
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