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Journal Articles

Characterization of a bent diamond used as dispersive spectrometer for XFEL applications

Ulrike Boesenberg, Liubov Samoylova, Thomas Roth, Harald Sinn, Sergey Terentev, Vladimir Blank, Rudolf Rüffer, Anders Madsen
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2054, 060011 (2019)
https://doi.org/10.1063/1.5084642
Published: January 2019
View article titled, Characterization of a bent diamond used as dispersive spectrometer for XFEL applications
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Journal Articles

Erratum on “Determining the defect parameters of the deep aluminum-related defect center in silicon” [Appl. Phys. Lett. 91, 122109 (2007)]

Philipp Rosenits, Thomas Roth, Stefan W. Glunz
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 239904 (2011)
https://doi.org/10.1063/1.3652753
Published: December 2011
View article titled, Erratum on “Determining the defect parameters of the deep aluminum-related defect center in silicon” [Appl. Phys. Lett. 91, 122109 (2007)]
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Journal Articles

The ESRF Miniature Pulsed Magnetic Field System

Peter J. E. M van der Linden, Cornelius Strohm, Thomas Roth, Carsten Detlefs, Olivier Mathon
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1234, 107–110 (2010)
https://doi.org/10.1063/1.3463153
Published: June 2010
View article titled, The ESRF Miniature Pulsed Magnetic Field System
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Journal Articles

Determining the excess carrier lifetime in crystalline silicon thin-films by photoluminescence measurements

Philipp Rosenits, Thomas Roth, Wilhelm Warta, Stefan Reber, Stefan W. Glunz
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 053714 (2009)
https://doi.org/10.1063/1.3080174
Published: March 2009
View article titled, Determining the excess carrier lifetime in crystalline silicon thin-films by photoluminescence measurements
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Journal Articles

Illumination-induced errors associated with suns- V OC measurements of silicon solar cells

Thomas Roth, Jochen Hohl-Ebinger, Daniela Grote, Evelyn Schmich, Wilhelm Warta, Stefan W. Glunz, Ronald A. Sinton
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 80, 033106 (2009)
https://doi.org/10.1063/1.3095441
Published: March 2009
View article titled, Illumination-induced errors associated with suns- V OC measurements of silicon solar cells
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Journal Articles

Electronic properties of titanium in boron-doped silicon analyzed by temperature-dependent photoluminescence and injection-dependent photoconductance lifetime spectroscopy

Thomas Roth, Marc Rüdiger, Wilhelm Warta, Stefan W. Glunz
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 074510 (2008)
https://doi.org/10.1063/1.2996252
Published: October 2008
View article titled, Electronic properties of titanium in boron-doped silicon analyzed by temperature-dependent photoluminescence and injection-dependent photoconductance lifetime spectroscopy
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Journal Articles

Influence of photon reabsorption on temperature dependent quasi-steady-state photoluminescence lifetime measurements on crystalline silicon

Marc Rüdiger, Thorsten Trupke, Peter Würfel, Thomas Roth, Stefan W. Glunz
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 222112 (2008)
https://doi.org/10.1063/1.2939586
Published: June 2008
View article titled, Influence of photon reabsorption on temperature dependent quasi-steady-state photoluminescence lifetime measurements on crystalline silicon
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Journal Articles

Determining the defect parameters of the deep aluminum-related defect center in silicon

Philipp Rosenits, Thomas Roth, Stefan W. Glunz, Svetlana Beljakowa
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 122109 (2007)
https://doi.org/10.1063/1.2789378
Published: September 2007
View article titled, Determining the defect parameters of the deep aluminum-related defect center in silicon
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Journal Articles

Formation rates of iron-acceptor pairs in crystalline silicon

Daniel Macdonald, Thomas Roth, Prakash N. K. Deenapanray, Karsten Bothe, Peter Pohl, Jan Schmidt
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 083509 (2005)
https://doi.org/10.1063/1.2102071
Published: October 2005
View article titled, Formation rates of iron-acceptor pairs in crystalline silicon
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