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Thomas E. Mates
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Journal Articles

200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) β -Ga2O3 epitaxial drift layers

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Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit, Rachel Kahler, Saurav Roy, Yizheng Liu, Steve Rebollo, Anna Kallistova, Thomas E. Mates, Sriram Krishnamoorthy
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 182103 (2024)
https://doi.org/10.1063/5.0230413
Published: October 2024
View articletitled, 200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) β -Ga2O3 epitaxial drift layers
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Journal Articles

Two-dimensional spin systems in PECVD-grown diamond with tunable density and long coherence for enhanced quantum sensing and simulation

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Lillian B. Hughes, Zhiran Zhang, Chang Jin, Simon A. Meynell, Bingtian Ye, Weijie Wu, Zilin Wang, Emily J. Davis, Thomas E. Mates, Norman Y. Yao, Kunal Mukherjee, Ania C. Bleszynski Jayich
Journal: APL Materials
APL Mater. 11, 021101 (2023)
https://doi.org/10.1063/5.0133501
Published: February 2023
View articletitled, Two-dimensional spin systems in PECVD-grown diamond with tunable density and long coherence for enhanced quantum sensing and simulation
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Includes: Supplementary data
Journal Articles

Mg doping and diffusion in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

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Akhil Mauze, Yuewei Zhang, Takeki Itoh, Thomas E. Mates, Hartwin Peelaers, Chris G. Van de Walle, James S. Speck
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 235301 (2021)
https://doi.org/10.1063/5.0072611
Published: December 2021
View articletitled, Mg doping and diffusion in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
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Journal Articles

2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature

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Caroline E. Reilly, Nirupam Hatui, Thomas E. Mates, Shuji Nakamura, Steven P. DenBaars, Stacia Keller
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 222103 (2021)
https://doi.org/10.1063/5.0050584
Published: June 2021
View articletitled, 2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature
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Journal Articles

Carbon impurity concentrations in BaSnO3 films grown by molecular beam epitaxy using a tin oxide source

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Wangzhou Wu, Nicholas G. Combs, Thomas E. Mates, Susanne Stemmer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 043405 (2020)
https://doi.org/10.1116/6.0000122
Published: June 2020
View articletitled, Carbon impurity concentrations in BaSnO3 films grown by molecular beam epitaxy using a tin oxide source
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Includes: Supplementary data
Journal Articles

Dopant solubility and charge compensation in La-doped SrSnO3 films

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Tristan Truttmann, Abhinav Prakash, Jin Yue, Thomas E. Mates, Bharat Jalan
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 152103 (2019)
https://doi.org/10.1063/1.5119272
Published: October 2019
View articletitled, Dopant solubility and charge compensation in La-doped SrSnO3 films
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Includes: Supplementary data
Journal Articles

The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates

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Simon Bubel, Adam J. Hauser, Anne M. Glaudell, Thomas E. Mates, Susanne Stemmer, Michael L. Chabinyc
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 122102 (2015)
https://doi.org/10.1063/1.4915269
Published: March 2015
View articletitled, The electrochemical impact on electrostatic modulation of the metal-insulator transition in nickelates
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Includes: Supplementary data
Journal Articles

Extremely scaled high-k/In0.53Ga0.47As gate stacks with low leakage and low interface trap densities

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Varistha Chobpattana, Evgeny Mikheev, Jack Y. Zhang, Thomas E. Mates, Susanne Stemmer
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 124104 (2014)
https://doi.org/10.1063/1.4896494
Published: September 2014
View articletitled, Extremely scaled high-k/In0.53Ga0.47As gate stacks with low leakage and low interface trap densities
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Journal Articles

Scaled ZrO2 dielectrics for In0.53Ga0.47As gate stacks with low interface trap densities

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Varistha Chobpattana, Thomas E. Mates, Jack Y. Zhang, Susanne Stemmer
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 182912 (2014)
https://doi.org/10.1063/1.4875977
Published: May 2014
View articletitled, Scaled ZrO2 dielectrics for In0.53Ga0.47As gate stacks with low interface trap densities
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Journal Articles

Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

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Varistha Chobpattana, Thomas E. Mates, William J. Mitchell, Jack Y. Zhang, Susanne Stemmer
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 154108 (2013)
https://doi.org/10.1063/1.4825259
Published: October 2013
View articletitled, Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
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Journal Articles

Thermoelectric properties of single crystal Sc1−xErxAs:InGaAs nanocomposites

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Rachel Koltun, Jacqueline L. Hall, Thomas E. Mates, John E. Bowers, Brian D. Schultz, Christopher J. Palmstrøm
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 041401 (2013)
https://doi.org/10.1116/1.4810961
Published: June 2013
View articletitled, Thermoelectric properties of single crystal Sc1−xErxAs:InGaAs nanocomposites
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Journal Articles

Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition

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David F. Brown, Stacia Keller, Thomas E. Mates, James S. Speck, Steven P. DenBaars, Umesh K. Mishra
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 033509 (2010)
https://doi.org/10.1063/1.3296127
Published: February 2010
View articletitled, Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition
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Journal Articles

Analysis of carbon in SrTiO 3 grown by hybrid molecular beam epitaxy

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Bharat Jalan, Joël Cagnon, Thomas E. Mates, Susanne Stemmer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 27, 1365–1368 (2009)
https://doi.org/10.1116/1.3253355
Published: October 2009
View articletitled, Analysis of carbon in SrTiO 3 grown by hybrid molecular beam epitaxy
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Journal Articles

Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy

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Man Hoi Wong, Feng Wu, Thomas E. Mates, James S. Speck, Umesh K. Mishra
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 093710 (2008)
https://doi.org/10.1063/1.3009669
Published: November 2008
View articletitled, Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy
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Journal Articles

Effects of hydrogen anneals on oxygen deficient SrTiO 3 − x single crystals

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Bharat Jalan, Roman Engel-Herbert, Thomas E. Mates, Susanne Stemmer
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 052907 (2008)
https://doi.org/10.1063/1.2969037
Published: August 2008
View articletitled, Effects of hydrogen anneals on oxygen deficient SrTiO 3 − x single crystals
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Journal Articles

Structural characterization of an elevated lipid bilayer obtained by stepwise functionalization of a self-assembled alkenyl silane film

Open Access
Christian Daniel, Karen E. Sohn, Thomas E. Mates, Edward J. Kramer, Joachim O. Rädler, Erich Sackmann, Bert Nickel, Luisa Andruzzi
Journal: Biointerphases
Biointerphases 2, 109–118 (2007)
https://doi.org/10.1116/1.2790852
Published: October 2007
View articletitled, Structural characterization of an elevated lipid bilayer obtained by stepwise functionalization of a self-assembled alkenyl silane film
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Includes: Supplementary data
Journal Articles

Detection and mobility of hafnium in Si O 2

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Dmitri O. Klenov, Thomas E. Mates, Susanne Stemmer
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 041918 (2006)
https://doi.org/10.1063/1.2240743
Published: July 2006
View articletitled, Detection and mobility of hafnium in Si O 2
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Journal Articles

Atomic structure of (111) Sr Ti O 3 ∕ Pt interfaces

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Steffen Schmidt, Dmitri O. Klenov, Sean P. Keane, Jiwei Lu, Thomas E. Mates, Susanne Stemmer
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 131914 (2006)
https://doi.org/10.1063/1.2191410
Published: March 2006
View articletitled, Atomic structure of (111) Sr Ti O 3 ∕ Pt interfaces
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