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Journal Articles

Surface cleaning and pure nitridation of GaSb by in-situ plasma processing

Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro, Mutsuo Ogura, Wen Hsin Chang, Tetsuji Yasuda, Tatsuro Maeda

AIP Advances 7, 105117 (2017)

https://doi.org/10.1063/1.5002173

Published: October 2017

View articletitled, Surface cleaning and pure nitridation of GaSb by in-situ plasma processing

Journal Articles

Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

Takahiro Mori, Yukinori Morita, Noriyuki Miyata, Shinji Migita, Koichi Fukuda, Wataru Mizubayashi, Meishoku Masahara, Tetsuji Yasuda, Hiroyuki Ota

Appl. Phys. Lett. 106, 083501 (2015)

https://doi.org/10.1063/1.4913610

Published: February 2015

View articletitled, Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

Journal Articles

Electrical characteristics and thermal stability of HfO₂ metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces

Noriyuki Miyata, Akihiro Ohtake, Masakazu Ichikawa, Takahiro Mori, Tetsuji Yasuda

Appl. Phys. Lett. 104, 232104 (2014)

https://doi.org/10.1063/1.4882643

Published: June 2014

View articletitled, Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces

Journal Articles

Heteroepitaxy of GaSb on Si(111) and fabrication of HfO₂/GaSb metal-oxide-semiconductor capacitors

Akihiro Ohtake, Takaaki Mano, Noriyuki Miyata, Takahiro Mori, Tetsuji Yasuda

Appl. Phys. Lett. 104, 032101 (2014)

https://doi.org/10.1063/1.4862542

Published: January 2014

View articletitled, Heteroepitaxy of GaSb on Si(111) and fabrication of HfO2/GaSb metal-oxide-semiconductor capacitors

Journal Articles

Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Noriyuki Taoka, Masafumi Yokoyama, Sang Hyeon Kim, Rena Suzuki, Sunghoon Lee, Ryo Iida, Takuya Hoshii, Wipakorn Jevasuwan, Tatsuro Maeda, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi

Appl. Phys. Lett. 103, 143509 (2013)

https://doi.org/10.1063/1.4824474

Published: October 2013

View articletitled, Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Journal Articles

Impact of atomic layer deposition temperature on HfO₂/InGaAs metal-oxide-semiconductor interface properties

Rena Suzuki, Noriyuki Taoka, Masafumi Yokoyama, Sang-Hyeon Kim, Takuya Hoshii, Tatsuro Maeda, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi

J. Appl. Phys. 112, 084103 (2012)

https://doi.org/10.1063/1.4759329

Published: October 2012

View articletitled, Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

Journal Articles

Reduction in interface state density of Al₂O₃/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

Takuya Hoshii, Sunghoon Lee, Rena Suzuki, Noriyuki Taoka, Masafumi Yokoyama, Hishashi Yamada, Masahiko Hata, Tetsuji Yasuda, Mitsuru Takenaka, Shinichi Takagi

J. Appl. Phys. 112, 073702 (2012)

https://doi.org/10.1063/1.4755804

Published: October 2012

View articletitled, Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

Journal Articles

La₂O₃ gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La₂O₃ stacks for improved metal-oxide-semiconductor characteristics

Takuya Suzuki, Miyuki Kouda, Parhat Ahmet, Hiroshi Iwai, Kuniyuki Kakushima, Tetsuji Yasuda

J. Vac. Sci. Technol. A 30, 051507 (2012)

https://doi.org/10.1116/1.4737618

Published: July 2012

View articletitled, La2O3 gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La2O3 stacks for improved metal-oxide-semiconductor characteristics

Journal Articles

Strained In_0.53Ga_0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain

SangHyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, Ryosho Nakane, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi

Appl. Phys. Lett. 100, 193510 (2012)

https://doi.org/10.1063/1.4714770

Published: May 2012

View articletitled, Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain

Journal Articles

In_0.53Ga_0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

SangHyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, Ryosho Nakane, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi

Appl. Phys. Lett. 100, 073504 (2012)

https://doi.org/10.1063/1.3685505

Published: February 2012

View articletitled, In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

Journal Articles

Kelvin probe study on formation of electric dipole at direct-contact HfO₂/Si interfaces

Noriyuki Miyata, Tetsuji Yasuda, Yasuhiro Abe

J. Appl. Phys. 110, 074115 (2011)

https://doi.org/10.1063/1.3646398

Published: October 2011

View articletitled, Kelvin probe study on formation of electric dipole at direct-contact HfO2/Si interfaces

Journal Articles

Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy

SangHyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, Ryo Iida, Sunghoon Lee, Ryosho Nakane, Yuji Urabe, Noriyuki Miyata, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi

Appl. Phys. Lett. 98, 243501 (2011)

https://doi.org/10.1063/1.3597228

Published: June 2011

View articletitled, Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy

Journal Articles

SiO 2 / Si interfaces on high-index surfaces: Re-evaluation of trap densities and characterization of bonding structures

Shoichi Ogata, Shinya Ohno, Masatoshi Tanaka, Takahiro Mori, Tsuyoshi Horikawa, Tetsuji Yasuda

Appl. Phys. Lett. 98, 092906 (2011)

https://doi.org/10.1063/1.3561741

Published: March 2011

View articletitled, SiO 2 / Si interfaces on high-index surfaces: Re-evaluation of trap densities and characterization of bonding structures

Journal Articles

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Yuji Urabe, Masafumi Yokoyama, Hideki Takagi, Tetsuji Yasuda, Noriyuki Miyata, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi

Appl. Phys. Lett. 97, 253502 (2010)

https://doi.org/10.1063/1.3528334

Published: December 2010

View articletitled, Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Journal Articles

Structural degradation of thin HfO 2 film on Ge during the postdeposition annealing

Noriyuki Miyata, Tetsuji Yasuda, Yasuhiro Abe

J. Appl. Phys. 107, 103536 (2010)

https://doi.org/10.1063/1.3415542

Published: May 2010

View articletitled, Structural degradation of thin HfO 2 film on Ge during the postdeposition annealing

Journal Articles

III-V-semiconductor-on-insulator n -channel metal-insulator-semiconductor field-effect transistors with buried Al 2 O 3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

Masafumi Yokoyama, Tetsuji Yasuda, Hideki Takagi, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, Shinichi Takagi

Appl. Phys. Lett. 96, 142106 (2010)

https://doi.org/10.1063/1.3374447

Published: April 2010

View articletitled, III-V-semiconductor-on-insulator n -channel metal-insulator-semiconductor field-effect transistors with buried Al 2 O 3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

Journal Articles

Dipole formation at direct-contact Hf O 2 ∕ Si interface

Yasuhiro Abe, Noriyuki Miyata, Yasuhiro Shiraki, Tetsuji Yasuda

Appl. Phys. Lett. 90, 172906 (2007)

https://doi.org/10.1063/1.2731514

Published: April 2007

View articletitled, Dipole formation at direct-contact Hf O 2 ∕ Si interface

Journal Articles

Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures

Tatsuro Maeda, Tetsuji Yasuda, Masayasu Nishizawa, Noriyuki Miyata, Yukinori Morita, Shinichi Takagi

J. Appl. Phys. 100, 014101 (2006)

https://doi.org/10.1063/1.2206395

Published: July 2006

View articletitled, Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures

Journal Articles

Improved C – V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition

Masaru Kadoshima, Koji Akiyama, Katsuhiko Yamamoto, Hideaki Fujiwara, Tetsuji Yasuda, Toshihide Nabatame, Akira Toriumi

J. Vac. Sci. Technol. B 23, 42–47 (2005)

https://doi.org/10.1116/1.1835311

Published: December 2004

View articletitled, Improved C – V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition

Journal Articles

Ge metal-insulator-semiconductor structures with Ge 3 N 4 dielectrics by direct nitridation of Ge substrates

Tatsuro Maeda, Tetsuji Yasuda, Masayasu Nishizawa, Noriyuki Miyata, Yukinori Morita, Shinichi Takagi

Appl. Phys. Lett. 85, 3181–3183 (2004)

https://doi.org/10.1063/1.1805194

Published: October 2004

View articletitled, Ge metal-insulator-semiconductor structures with Ge 3 N 4 dielectrics by direct nitridation of Ge substrates

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Surface cleaning and pure nitridation of GaSb by in-situ plasma processing

Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

Electrical characteristics and thermal stability of HfO₂ metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces

Heteroepitaxy of GaSb on Si(111) and fabrication of HfO₂/GaSb metal-oxide-semiconductor capacitors

Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Impact of atomic layer deposition temperature on HfO₂/InGaAs metal-oxide-semiconductor interface properties

Reduction in interface state density of Al₂O₃/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

La₂O₃ gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La₂O₃ stacks for improved metal-oxide-semiconductor characteristics

Strained In_0.53Ga_0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain

In_0.53Ga_0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

Kelvin probe study on formation of electric dipole at direct-contact HfO₂/Si interfaces

Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy

SiO 2 / Si interfaces on high-index surfaces: Re-evaluation of trap densities and characterization of bonding structures

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

Structural degradation of thin HfO 2 film on Ge during the postdeposition annealing

III-V-semiconductor-on-insulator n -channel metal-insulator-semiconductor field-effect transistors with buried Al 2 O 3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

Dipole formation at direct-contact Hf O 2 ∕ Si interface

Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures

Improved C – V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition

Ge metal-insulator-semiconductor structures with Ge 3 N 4 dielectrics by direct nitridation of Ge substrates

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