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Tatsuya Yasuoka
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Journal Articles

Competition between ion beam sputtering and self-organization of point defects for surface nanostructuring on germanium

Naoto Oishi, Tatsuya Yasuoka, Toshiyuki Kawaharamura, Noriko Nitta
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063101 (2023)
https://doi.org/10.1116/6.0002878
Published: September 2023
View article titled, Competition between ion beam sputtering and self-organization of point defects for surface nanostructuring on germanium
Open the PDF for Competition between ion beam sputtering and self-organization of point defects for surface nanostructuring on germanium in another window
Includes: Supplementary data
Journal Articles

The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition

Tatsuya Yasuoka, Li Liu, Tamako Ozaki, Kanta Asako, Yuna Ishikawa, Miyabi Fukue, Giang T. Dang, Toshiyuki Kawaharamura
Journal: AIP Advances
AIP Advances 11, 045123 (2021)
https://doi.org/10.1063/5.0051050
Published: April 2021
View article titled, The effect of HCl on the α-Ga<sub>2</sub>O<sub>3</sub> thin films fabricated by third generation mist chemical vapor deposition
Open the PDF for The effect of HCl on the α-Ga<sub>2</sub>O<sub>3</sub> thin films fabricated by third generation mist chemical vapor deposition in another window
Includes: Supplementary data
Journal Articles

Conductive Si-doped α-(AlxGa1−x)2O3 thin films with the bandgaps up to 6.22 eV

Giang T. Dang, Yuki Tagashira, Tatsuya Yasuoka, Li Liu, Toshiyuki Kawaharamura
Journal: AIP Advances
AIP Advances 10, 115019 (2020)
https://doi.org/10.1063/5.0026095
Published: November 2020
View article titled, Conductive Si-doped α-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> thin films with the bandgaps up to 6.22 eV
Open the PDF for Conductive Si-doped α-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> thin films with the bandgaps up to 6.22 eV in another window
Includes: Supplementary data
Journal Articles

α -(AlxGa1−x)2O3 single-layer and heterostructure buffers for the growth of conductive Sn-doped α -Ga2O3 thin films via mist chemical vapor deposition

Giang T. Dang, Shota Sato, Yuki Tagashira, Tatsuya Yasuoka, Li Liu, Toshiyuki Kawaharamura
Journal: APL Materials
APL Mater. 8, 101101 (2020)
https://doi.org/10.1063/5.0023041
Published: October 2020
View article titled, α -(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> single-layer and heterostructure buffers for the growth of conductive Sn-doped α -Ga<sub>2</sub>O<sub>3</sub> thin films via mist chemical vapor deposition
Open the PDF for α -(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> single-layer and heterostructure buffers for the growth of conductive Sn-doped α -Ga<sub>2</sub>O<sub>3</sub> thin films via mist chemical vapor deposition in another window
Includes: Supplementary data