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Takuji Hosoi
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Journal Articles

Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯ ) substrates

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Hidetoshi Mizobata, Kazuki Tomigahara, Mikito Nozaki, Takuma Kobayashi, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 062104 (2022)
https://doi.org/10.1063/5.0095468
Published: August 2022
View articletitled, Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯ ) substrates
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Journal Articles

Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing

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Yuhei Wada, Hidetoshi Mizobata, Mikito Nozaki, Takuma Kobayashi, Takuji Hosoi, Tetsu Kachi, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 082103 (2022)
https://doi.org/10.1063/5.0081198
Published: February 2022
View articletitled, Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing
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Journal Articles

Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy

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Hidetoshi Nakanishi, Tatsuhiko Nishimura, Iwao Kawayama, Masayoshi Tonouchi, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 115305 (2021)
https://doi.org/10.1063/5.0058962
Published: September 2021
View articletitled, Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy
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Journal Articles

Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams

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Akira Uedono, Wataru Ueno, Takahiro Yamada, Takuji Hosoi, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Heiji Watanabe
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 054503 (2020)
https://doi.org/10.1063/1.5134513
Published: February 2020
View articletitled, Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams
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Journal Articles

Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

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Mitsuru Sometani, Takuji Hosoi, Hirohisa Hirai, Tetsuo Hatakeyama, Shinsuke Harada, Hiroshi Yano, Takayoshi Shimura, Heiji Watanabe, Yoshiyuki Yonezawa, Hajime Okumura
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 132102 (2019)
https://doi.org/10.1063/1.5115304
Published: September 2019
View articletitled, Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations
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Journal Articles

Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

Open Access
Eigo Fujita, Mitsuru Sometani, Tetsuo Hatakeyama, Shinsuke Harada, Hiroshi Yano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: AIP Advances
AIP Advances 8, 085305 (2018)
https://doi.org/10.1063/1.5034048
Published: August 2018
View articletitled, Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements
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Journal Articles

Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams

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Akira Uedono, Takahiro Yamada, Takuji Hosoi, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 182103 (2018)
https://doi.org/10.1063/1.5027257
Published: May 2018
View articletitled, Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams
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Journal Articles

Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures

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Kenta Watanabe, Mikito Nozaki, Takahiro Yamada, Satoshi Nakazawa, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 042102 (2017)
https://doi.org/10.1063/1.4986419
Published: July 2017
View articletitled, Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures
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Journal Articles

Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

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Takahiro Yamada, Joyo Ito, Ryohei Asahara, Kenta Watanabe, Mikito Nozaki, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 261603 (2017)
https://doi.org/10.1063/1.4990689
Published: June 2017
View articletitled, Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers
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Journal Articles

Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization

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Hiroshi Oka, Takashi Amamoto, Masahiro Koyama, Yasuhiko Imai, Shigeru Kimura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 032104 (2017)
https://doi.org/10.1063/1.4974473
Published: January 2017
View articletitled, Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization
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Journal Articles

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

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Takahiro Yamada, Joyo Ito, Ryohei Asahara, Kenta Watanabe, Mikito Nozaki, Satoshi Nakazawa, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 035303 (2017)
https://doi.org/10.1063/1.4974458
Published: January 2017
View articletitled, Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient
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Journal Articles

Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties

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Takuji Hosoi, Daisuke Nagai, Mitsuru Sometani, Yoshihito Katsu, Hironori Takeda, Takayoshi Shimura, Manabu Takei, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 182114 (2016)
https://doi.org/10.1063/1.4967002
Published: November 2016
View articletitled, Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties
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Journal Articles

Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy

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Daichi Mori, Hiroshi Oka, Takuji Hosoi, Kentaro Kawai, Mizuho Morita, Ethan J. Crumlin, Zhi Liu, Heiji Watanabe, Kenta Arima
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 095306 (2016)
https://doi.org/10.1063/1.4962202
Published: September 2016
View articletitled, Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy
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Journal Articles

Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high-k gate stack

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Takuji Hosoi, Yuya Minoura, Ryohei Asahara, Hiroshi Oka, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 252104 (2015)
https://doi.org/10.1063/1.4938397
Published: December 2015
View articletitled, Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high-k gate stack
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Journal Articles

Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

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Shingo Ogawa, Ryohei Asahara, Yuya Minoura, Hideki Sako, Naohiko Kawasaki, Ichiko Yamada, Takashi Miyamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 235704 (2015)
https://doi.org/10.1063/1.4937573
Published: December 2015
View articletitled, Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers
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Journal Articles

Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy

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Takayoshi Shimura, Masahiro Matsue, Kohei Tominaga, Keiko Kajimura, Takashi Amamoto, Takuji Hosoi, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 221109 (2015)
https://doi.org/10.1063/1.4936992
Published: December 2015
View articletitled, Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy
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Includes: Supplementary data
Journal Articles

Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas

Open Access
Atthawut Chanthaphan, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: AIP Advances
AIP Advances 5, 097134 (2015)
https://doi.org/10.1063/1.4930980
Published: September 2015
View articletitled, Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas
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Journal Articles

Cathodoluminescence study of radiative interface defects in thermally grown SiO2/4H-SiC(0001) structures

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Yuta Fukushima, Atthawut Chanthaphan, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 261604 (2015)
https://doi.org/10.1063/1.4923470
Published: June 2015
View articletitled, Cathodoluminescence study of radiative interface defects in thermally grown SiO2/4H-SiC(0001) structures
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Journal Articles

Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

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Ryohei Asahara, Iori Hideshima, Hiroshi Oka, Yuya Minoura, Shingo Ogawa, Akitaka Yoshigoe, Yuden Teraoka, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 233503 (2015)
https://doi.org/10.1063/1.4922447
Published: June 2015
View articletitled, Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers
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Journal Articles

Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy

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Takuji Hosoi, Yuichiro Suzuki, Takayoshi Shimura, Heiji Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 173502 (2014)
https://doi.org/10.1063/1.4900442
Published: October 2014
View articletitled, Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy
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