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Takeshi Ohshima
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Journal Articles

Radiation effects in materials

Khalid Hattar, Rudy J. M. Konings, Lorenzo Malerba, Takeshi Ohshima
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 030401 (2023)
https://doi.org/10.1063/5.0164237
Published: July 2023
View article titled, Radiation effects in materials
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Journal Articles

Direct energy conversion using Ni/SiC Schottky junction in 237Np and 241Am gamma ray regions

Tatsuo Fukuda, Masaaki Kobata, Takahisa Shobu, Kenji Yoshii, Junichiro Kamiya, Yosuke Iwamoto, Takahiro Makino, Yuichi Yamazaki, Takeshi Ohshima, Yasuhiro Shirai, Tsuyoshi Yaita
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 245102 (2022)
https://doi.org/10.1063/5.0099136
Published: December 2022
View article titled, Direct energy conversion using Ni/SiC Schottky junction in <sup>237</sup>Np and <sup>241</sup>Am gamma ray regions
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Journal Articles

Nitrogen related paramagnetic defects: Decoherence source of ensemble of NV− center

Editor’s Pick
Chikara Shinei, Yuta Masuyama, Masashi Miyakawa, Hiroshi Abe, Shuya Ishii, Seiichi Saiki, Shinobu Onoda, Takashi Taniguchi, Takeshi Ohshima, Tokuyuki Teraji
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 214402 (2022)
https://doi.org/10.1063/5.0103332
Published: December 2022
View article titled, Nitrogen related paramagnetic defects: Decoherence source of ensemble of NV<sup>−</sup> center
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Journal Articles

Electrical detection of nuclear spins via silicon vacancies in silicon carbide at room temperature

Tetsuri Nishikawa, Naoya Morioka, Hiroshi Abe, Hiroki Morishita, Takeshi Ohshima, Norikazu Mizuochi
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 184005 (2022)
https://doi.org/10.1063/5.0115928
Published: November 2022
View article titled, Electrical detection of nuclear spins via silicon vacancies in silicon carbide at room temperature
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Journal Articles

Transfer-printing-based integration of silicon nitride grating structure on single-crystal diamond toward sensitive magnetometers

Ryota Katsumi, Takeshi Hizawa, Akihiro Kuwahata, Shun Naruse, Yuji Hatano, Takayuki Iwasaki, Mutsuko Hatano, Fedor Jelezko, Shinobu Onoda, Takeshi Ohshima, Masaki Sekino, Takashi Yatsui
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 161103 (2022)
https://doi.org/10.1063/5.0107854
Published: October 2022
View article titled, Transfer-printing-based integration of silicon nitride grating structure on single-crystal diamond toward sensitive magnetometers
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Journal Articles

Differences in radiation damage to carrier lifetimes in the neutral and depletion regions of InGaP and GaAs solar cells

Tetsuya Nakamura, Mitsuru Imaizumi, Shin-ichiro Sato, Takeshi Ohshima, Hidefumi Akiyama, Yoshitaka Okada
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 115701 (2022)
https://doi.org/10.1063/5.0099106
Published: September 2022
View article titled, Differences in radiation damage to carrier lifetimes in the neutral and depletion regions of InGaP and GaAs solar cells
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Journal Articles

Mechanism of improved crystallinity by defect-modification in proton-irradiated GaAsPN photovoltaics: Experimental and first-principle calculations approach

Keisuke Yamane, Yuito Maki, Shun One, Akihiro Wakahara, Emil-Mihai Pavelescu, Takeshi Ohshima, Tetsuya Nakamura, Mitsuru Imaizumi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 065701 (2022)
https://doi.org/10.1063/5.0096345
Published: August 2022
View article titled, Mechanism of improved crystallinity by defect-modification in proton-irradiated GaAsPN photovoltaics: Experimental and first-principle calculations approach
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Journal Articles

Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity

Kazutoshi Kojima, Shin-ichiro Sato, Takeshi Ohshima, Shin-Ichiro Kuroki
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 245107 (2022)
https://doi.org/10.1063/5.0095457
Published: June 2022
View article titled, Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity
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Journal Articles

Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors

Akinori Takeyama, Takahiro Makino, Yasunori Tanaka, Shin-Ichiro Kuroki, Takeshi Ohshima
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 244503 (2022)
https://doi.org/10.1063/5.0095841
Published: June 2022
View article titled, Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors
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Journal Articles

Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC

Olger V. Zwier, Tom Bosma, Carmem M. Gilardoni, Xu Yang, Alexander R. Onur, Takeshi Ohshima, Nguyen T. Son, Caspar H. van der Wal
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 094401 (2022)
https://doi.org/10.1063/5.0077112
Published: March 2022
View article titled, Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC
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Includes: Supplementary data
Journal Articles

Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs

Yuta Abe, Akihumi Chaen, Mitsuru Sometani, Shinsuke Harada, Yuichi Yamazaki, Takeshi Ohshima, Takahide Umeda
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 064001 (2022)
https://doi.org/10.1063/5.0078189
Published: February 2022
View article titled, Electrical detection of <em>T</em><sub>V2a</sub>-type silicon vacancy spin defect in 4H-SiC MOSFETs
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Journal Articles

Equilibrium charge state of NV centers in diamond

Chikara Shinei, Masashi Miyakawa, Shuya Ishii, Seiichi Saiki, Shinobu Onoda, Takashi Taniguchi, Takeshi Ohshima, Tokuyuki Teraji
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 254001 (2021)
https://doi.org/10.1063/5.0079687
Published: December 2021
View article titled, Equilibrium charge state of NV centers in diamond
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Journal Articles

Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

Hiroki Nakane, Masashi Kato, Yutaro Ohkouchi, Xuan Thang Trinh, Ivan G. Ivanov, Takeshi Ohshima, Nguyen Tien Son
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 065703 (2021)
https://doi.org/10.1063/5.0059953
Published: August 2021
View article titled, Deep levels related to the carbon antisite–vacancy pair in 4H-SiC
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Journal Articles

Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces

Yasuto Hijikata, Shota Komori, Shunsuke Otojima, Yu-Ichiro Matsushita, Takeshi Ohshima
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 204005 (2021)
https://doi.org/10.1063/5.0048772
Published: May 2021
View article titled, Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces
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Includes: Supplementary data
Journal Articles

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Roland Nagy, Durga Bhaktavatsala Rao Dasari, Charles Babin, Di Liu, Vadim Vorobyov, Matthias Niethammer, Matthias Widmann, Tobias Linkewitz, Izel Gediz, Rainer Stöhr, Heiko B. Weber, Takeshi Ohshima, Misagh Ghezellou, Nguyen Tien Son, Jawad Ul-Hassan, Florian Kaiser, Jörg Wrachtrup
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 144003 (2021)
https://doi.org/10.1063/5.0046563
Published: April 2021
View article titled, Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
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Includes: Supplementary data
Journal Articles

Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices

FeaturedScilight
Tuan Minh Hoang, Hitoshi Ishiwata, Yuta Masuyama, Yuichi Yamazaki, Kazutoshi Kojima, Sang-Yun Lee, Takeshi Ohshima, Takayuki Iwasaki, Digh Hisamoto, Mutsuko Hatano
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 044001 (2021)
https://doi.org/10.1063/5.0027603
Published: January 2021
View article titled, Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices
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Journal Articles

Simultaneous thermometry and magnetometry using a fiber-coupled quantum diamond sensor

Yuji Hatano, Jaewon Shin, Daisuke Nishitani, Haruki Iwatsuka, Yuta Masuyama, Hiroki Sugiyama, Makoto Ishii, Shinobu Onoda, Takeshi Ohshima, Keigo Arai, Takayuki Iwasaki, Mutsuko Hatano
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 034001 (2021)
https://doi.org/10.1063/5.0031502
Published: January 2021
View article titled, Simultaneous thermometry and magnetometry using a fiber-coupled quantum diamond sensor
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Journal Articles

Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations

Yuichi Yamazaki, Yoji Chiba, Shin-ichiro Sato, Takahiro Makino, Naoto Yamada, Takahiro Satoh, Kazutoshi Kojima, Yasuto Hijikata, Hidekazu Tsuchida, Norihiro Hoshino, Sang-Yun Lee, Takeshi Ohshima
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 021106 (2021)
https://doi.org/10.1063/5.0028318
Published: January 2021
View article titled, Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations
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Includes: Supplementary data
Journal Articles

Electron paramagnetic resonance and theoretical study of gallium vacancy in β -Ga2O3

Editor’s Pick
Nguyen Tien Son, Quoc Duy Ho, Ken Goto, Hiroshi Abe, Takeshi Ohshima, Bo Monemar, Yoshinao Kumagai, Thomas Frauenheim, Peter Deák
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 032101 (2020)
https://doi.org/10.1063/5.0012579
Published: July 2020
View article titled, Electron paramagnetic resonance and theoretical study of gallium vacancy in <em>β</em> -Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

Erratum: “Identification of divacancy and silicon vacancy qubits in 6H-SiC” [Appl. Phys. Lett. 114 , 112107 (2019)]

Joel Davidsson, Viktor Ivády, Rickard Armiento, Takeshi Ohshima, N. T. Son, Adam Gali, Igor A. Abrikosov
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 059901 (2020)
https://doi.org/10.1063/1.5144728
Published: February 2020
View article titled, Erratum: “Identification of divacancy and silicon vacancy qubits in 6H-SiC” [Appl. Phys. Lett. 114 , 112107 (2019)]
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