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Journal Articles

Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer

Jun Uzuhashi, Jun Chen, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Tadakatsu Ohkubo, Takashi Sekiguchi

J. Appl. Phys. 136, 055702 (2024)

https://doi.org/10.1063/5.0216601

Published: August 2024

View article titled, Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer

Journal Articles

Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN

Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Jun Chen, Takashi Sekiguchi, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kazuhiro Hono

J. Appl. Phys. 133, 185702 (2023)

https://doi.org/10.1063/5.0142766

Published: May 2023

View article titled, Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN

Journal Articles

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, Kazuhiro Hono

J. Appl. Phys. 131, 185701 (2022)

https://doi.org/10.1063/5.0087248

Published: May 2022

View article titled, Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Journal Articles

Influence of implanted Mg concentration on defects and Mg distribution in GaN

Ashutosh Kumar, Wei Yi, Jun Uzuhashi, Tadakatsu Ohkubo, Jun Chen, Takashi Sekiguchi, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kazuhiro Hono

J. Appl. Phys. 128, 065701 (2020)

https://doi.org/10.1063/5.0014717

Published: August 2020

View article titled, Influence of implanted Mg concentration on defects and Mg distribution in GaN

Journal Articles

Mg diffusion and activation along threading dislocations in GaN

Wei Yi, Ashutosh Kumar, Jun Uzuhashi, Takashi Kimura, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Yongzhao Yao, Yukari Ishikawa, Jun Chen, Tadakatsu Ohkubo, Takashi Sekiguchi, Kazuhiro Hono

Appl. Phys. Lett. 116, 242103 (2020)

https://doi.org/10.1063/5.0009596

Published: June 2020

View article titled, Mg diffusion and activation along threading dislocations in GaN

Journal Articles

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano

Appl. Phys. Lett. 111, 122102 (2017)

https://doi.org/10.1063/1.4994627

Published: September 2017

View article titled, Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Journal Articles

Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates

Masatomo Sumiya, Naoki Toyomitsu, Yoshitaka Nakano, Jianyu Wang, Yoshitomo Harada, Liwen Sang, Takashi Sekiguchi, Tomohiro Yamaguchi, Tohru Honda

APL Mater. 5, 016105 (2017)

https://doi.org/10.1063/1.4974935

Published: January 2017

View article titled, Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates

Journal Articles

Temperature-dependent recombination velocity analysis on artificial small angle grain boundaries using electron beam induced current method

Takuto Kojima, Tomihisa Tachibana, Yoshio Ohshita, Ronit R. Prakash, Takashi Sekiguchi, Masafumi Yamaguchi

J. Appl. Phys. 119, 065302 (2016)

https://doi.org/10.1063/1.4940709

Published: February 2016

View article titled, Temperature-dependent recombination velocity analysis on artificial small angle grain boundaries using electron beam induced current method

Journal Articles

Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

Yao Yin, Huabin Sun, Liwen Sang, Peng Chen, Youdou Zheng, Benjamin Dierre, Masatomo Sumiya, Yi Shi, Takashi Sekiguchi

AIP Advances 5, 057129 (2015)

https://doi.org/10.1063/1.4921207

Published: May 2015

View article titled, Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

Journal Articles

Investigation of dislocations in Nb-doped SrTiO₃ by electron-beam-induced current and transmission electron microscopy

Jun Chen, Takashi Sekiguchi, Jianyong Li, Shun Ito, Wei Yi, Atsushi Ogura

Appl. Phys. Lett. 106, 102109 (2015)

https://doi.org/10.1063/1.4915298

Published: March 2015

View article titled, Investigation of dislocations in Nb-doped SrTiO3 by electron-beam-induced current and transmission electron microscopy

Journal Articles

Potential variation around grain boundaries in BaSi₂ films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy

Masakazu Baba, Kosuke O. Hara, Daichi Tsukahara, Kaoru Toko, Noritaka Usami, Takashi Sekiguchi, Takashi Suemasu

J. Appl. Phys. 116, 235301 (2014)

https://doi.org/10.1063/1.4904864

Published: December 2014

View article titled, Potential variation around grain boundaries in BaSi2 films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy

Journal Articles

In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC

Bin Chen, Jun Chen, Yuanzhao Yao, Takashi Sekiguchi, Hirofumi Matsuhata, Hajime Okumura

Appl. Phys. Lett. 105, 042104 (2014)

https://doi.org/10.1063/1.4891834

Published: July 2014

View article titled, In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC

Journal Articles

Analysis of the electrical properties of Cr/n-BaSi₂ Schottky junction and n-BaSi₂/p-Si heterojunction diodes for solar cell applications

Weijie Du, Masakazu Baba, Kaoru Toko, Kosuke O. Hara, Kentaro Watanabe, Takashi Sekiguchi, Noritaka Usami, Takashi Suemasu

J. Appl. Phys. 115, 223701 (2014)

https://doi.org/10.1063/1.4882117

Published: June 2014

View article titled, Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications

Journal Articles

Evaluation of potential variations around grain boundaries in BaSi₂ epitaxial films by Kelvin probe force microscopy

Masakazu Baba, Sadahiro Tsurekawa, Kentaro Watanabe, W. Du, Kaoru Toko, Kosuke O. Hara, Noritaka Usami, Takashi Sekiguchi, Takashi Suemasu

Appl. Phys. Lett. 103, 142113 (2013)

https://doi.org/10.1063/1.4824335

Published: October 2013

View article titled, Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy

Journal Articles

Deep-level photoluminescence due to dislocations and oxygen precipitates in multicrystalline Si

Michio Tajima, Yasuaki Iwata, Futoshi Okayama, Hiroyuki Toyota, Hisashi Onodera, Takashi Sekiguchi

J. Appl. Phys. 111, 113523 (2012)

https://doi.org/10.1063/1.4728194

Published: June 2012

View article titled, Deep-level photoluminescence due to dislocations and oxygen precipitates in multicrystalline Si

Journal Articles

Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Tomihisa Tachibana, Takashi Sameshima, Takuto Kojima, Koji Arafune, Koichi Kakimoto, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi, Yoshio Ohshita, Atsushi Ogura

J. Appl. Phys. 111, 074505 (2012)

https://doi.org/10.1063/1.3700250

Published: April 2012

View article titled, Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Journal Articles

Tuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiC

Bin Chen, Hirofumi Matsuhata, Takashi Sekiguchi, Akimasa Kinoshita, Kyouichi Ichinoseki, Hajime Okumura

Appl. Phys. Lett. 100, 132108 (2012)

https://doi.org/10.1063/1.3700963

Published: March 2012

View article titled, Tuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiC

Journal Articles

Secondary electron image formation of a freestanding α-Si₃N₄ nanobelt

Kazuhiro Kumagai (熊谷和博), Makoto Suzuki (鈴木誠), Takashi Sekiguchi (関口隆史)

J. Appl. Phys. 111, 054316 (2012)

https://doi.org/10.1063/1.3692972

Published: March 2012

View article titled, Secondary electron image formation of a freestanding α-Si3N4 nanobelt

Journal Articles

Direct imaging and optical activities of stacking faults in 4H-SiC homoepitaxial films

Bin Chen, Hirofumi Matsuhata, Kazuhiro Kumagai, Takashi Sekiguchi, Kyouichi Ichinoseki, Hajime Okumura

J. Appl. Phys. 111, 053513 (2012)

https://doi.org/10.1063/1.3691595

Published: March 2012

View article titled, Direct imaging and optical activities of stacking faults in 4H-SiC homoepitaxial films

Journal Articles

Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi₂ layers grown by molecular-beam epitaxy

Keiichi Akutsu, Hideki Kawakami, Mitsushi Suzuno, Takashi Yaguchi, Karolin Jiptner, Jun Chen, Takashi Sekiguchi, Teruhisa Ootsuka, Takashi Suemasu

J. Appl. Phys. 109, 123502 (2011)

https://doi.org/10.1063/1.3596565

Published: June 2011

View article titled, Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi2 layers grown by molecular-beam epitaxy

NARROW

Topics

Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer

Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Influence of implanted Mg concentration on defects and Mg distribution in GaN

Mg diffusion and activation along threading dislocations in GaN

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates

Temperature-dependent recombination velocity analysis on artificial small angle grain boundaries using electron beam induced current method

Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

Investigation of dislocations in Nb-doped SrTiO₃ by electron-beam-induced current and transmission electron microscopy

Potential variation around grain boundaries in BaSi₂ films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy

In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC

Analysis of the electrical properties of Cr/n-BaSi₂ Schottky junction and n-BaSi₂/p-Si heterojunction diodes for solar cell applications

Evaluation of potential variations around grain boundaries in BaSi₂ epitaxial films by Kelvin probe force microscopy

Deep-level photoluminescence due to dislocations and oxygen precipitates in multicrystalline Si

Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Tuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiC

Secondary electron image formation of a freestanding α-Si₃N₄ nanobelt

Direct imaging and optical activities of stacking faults in 4H-SiC homoepitaxial films

Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi₂ layers grown by molecular-beam epitaxy

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