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Journal Articles

Leakage current analysis of silicon diode with anode activated by furnace annealing or laser annealing using deep level transient spectroscopy

Hiroki Wakimoto, Takashi Matsumoto, Koji Yano, Tsutomu Muranaka

AIP Advances 10, 125301 (2020)

https://doi.org/10.1063/5.0024744

Published: December 2020

View article titled, Leakage current analysis of silicon diode with anode activated by furnace annealing or laser annealing using deep level transient spectroscopy

Journal Articles

Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

Hiroki Wakimoto, Haruo Nakazawa, Takashi Matsumoto, Yoichi Nabetani

J. Appl. Phys. 123, 161422 (2018)

https://doi.org/10.1063/1.5011229

Published: March 2018

View article titled, Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

Journal Articles

Experimental demonstration of a wavelength demultiplexer based on negative-refractive photonic-crystal components

Takashi Matsumoto, Tomohiko Asatsuma, Toshihiko Baba

Appl. Phys. Lett. 91, 091117 (2007)

https://doi.org/10.1063/1.2779927

Published: August 2007

View article titled, Experimental demonstration of a wavelength demultiplexer based on negative-refractive photonic-crystal components

Journal Articles

Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers

X. Q. Zhang, S. Ganapathy, I. Suemune, H. Kumano, K. Uesugi, Yoichi Nabetani, Takashi Matsumoto

Appl. Phys. Lett. 83, 4524–4526 (2003)

https://doi.org/10.1063/1.1629803

Published: December 2003

View article titled, Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers

Journal Articles

Resolution of photonic crystal superprism

Toshihiko Baba, Takashi Matsumoto

Appl. Phys. Lett. 81, 2325–2327 (2002)

https://doi.org/10.1063/1.1508813

Published: September 2002

View article titled, Resolution of photonic crystal superprism

Journal Articles

Production of organosilicon ions for SiC epitaxy

Masato Kiuchi, Takashi Matsumoto, Kazuhiko Mimoto, Takae Takeuchi, Seiichi Goto

Rev. Sci. Instrum. 71, 1157–1159 (2000)

https://doi.org/10.1063/1.1150414

Published: February 2000

View article titled, Production of organosilicon ions for SiC epitaxy

Journal Articles

Observing a codimension‐two heteroclinic bifurcation

Ryuji Tokunaga, Yasushi Abe, Takashi Matsumoto

Chaos 3, 63–72 (1993)

https://doi.org/10.1063/1.165965

Published: January 1993

View article titled, Observing a codimension‐two heteroclinic bifurcation

Journal Articles

Deformation and thermal oxidation of GaAsP wafers locally heated by a Nd:Y₃Al₅O₁₂ (yttrium aluminum garnet) laser beam

Tsutomu Kawamura, Takashi Matsumoto

J. Appl. Phys. 72, 4638–4642 (1992)

https://doi.org/10.1063/1.352118

Published: November 1992

View article titled, Deformation and thermal oxidation of GaAsP wafers locally heated by a Nd:Y3Al5O12 (yttrium aluminum garnet) laser beam

Journal Articles

Magnetic recording method involving core pieces of different thickness

Takashi Matsumoto

J. Acoust. Soc. Am. 88, 596 (1990)

https://doi.org/10.1121/1.399843

Published: July 1990

View article titled, Magnetic recording method involving core pieces of different thickness

Journal Articles

Interface states in GaAs/Al_xGa_1−xAs heterostructures grown by organometallic vapor phase epitaxy

Takashi Matsumoto, Pallab K. Bhattacharya, M. J. Ludowise

Appl. Phys. Lett. 42, 52–54 (1983)

https://doi.org/10.1063/1.93770

Published: January 1983

View article titled, Interface states in GaAs/AlxGa1−xAs heterostructures grown by organometallic vapor phase epitaxy

Journal Articles

Transfer doping effects at the organometallic vapor phase epitaxial Al_xGa_1−xAs‐substrate GaAs interface

Takashi Matsumoto, Pallab K. Bhattacharya, Johan Darmawan, M. J. Ludowise

Appl. Phys. Lett. 41, 1075–1077 (1982)

https://doi.org/10.1063/1.93406

Published: December 1982

View article titled, Transfer doping effects at the organometallic vapor phase epitaxial AlxGa1−xAs‐substrate GaAs interface

Journal Articles

Behavior of the 0.82 eV and other dominant electron traps in organometallic vapor phase epitaxial Al_xGa_1−xAs

Takashi Matsumoto, Pallab K. Bhattacharya, M. J. Ludowise

Appl. Phys. Lett. 41, 662–664 (1982)

https://doi.org/10.1063/1.93605

Published: October 1982

View article titled, Behavior of the 0.82 eV and other dominant electron traps in organometallic vapor phase epitaxial AlxGa1−xAs

Journal Articles

Headphone with two resonant peaks for simulating loudspeaker reproduction

Nobuhisa Atoji, Takashi Matsumoto, Shoichi Kusumoto, Kazue Sato, Mitsuhiro Hasegawa

J. Acoust. Soc. Am. 69, 343 (1981)

https://doi.org/10.1121/1.385245

Published: January 1981

View article titled, Headphone with two resonant peaks for simulating loudspeaker reproduction

NARROW

Topics

Leakage current analysis of silicon diode with anode activated by furnace annealing or laser annealing using deep level transient spectroscopy

Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

Experimental demonstration of a wavelength demultiplexer based on negative-refractive photonic-crystal components

Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers

Resolution of photonic crystal superprism

Production of organosilicon ions for SiC epitaxy

Observing a codimension‐two heteroclinic bifurcation

Deformation and thermal oxidation of GaAsP wafers locally heated by a Nd:Y₃Al₅O₁₂ (yttrium aluminum garnet) laser beam

Magnetic recording method involving core pieces of different thickness

Interface states in GaAs/Al_xGa_1−xAs heterostructures grown by organometallic vapor phase epitaxy

Transfer doping effects at the organometallic vapor phase epitaxial Al_xGa_1−xAs‐substrate GaAs interface

Behavior of the 0.82 eV and other dominant electron traps in organometallic vapor phase epitaxial Al_xGa_1−xAs

Headphone with two resonant peaks for simulating loudspeaker reproduction

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