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Journal Articles

Steep switching in trimmed-gate tunnel FET

Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda

AIP Advances 8, 095103 (2018)

https://doi.org/10.1063/1.5043570

Published: September 2018

View articletitled, Steep switching in trimmed-gate tunnel FET

Journal Articles

Effect of post-implantation annealing on Al–N isoelectronic trap formation in silicon: Al–N pair formation and defect recovery mechanisms

Takahiro Mori, Yukinori Morita, Takashi Matsukawa

AIP Advances 8, 055024 (2018)

https://doi.org/10.1063/1.5030795

Published: May 2018

View articletitled, Effect of post-implantation annealing on Al–N isoelectronic trap formation in silicon: Al–N pair formation and defect recovery mechanisms

Journal Articles

Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder

Shuichiro Hashimoto, Ryo Yokogawa, Shunsuke Oba, Shuhei Asada, Taiyu Xu, Motohiro Tomita, Atsushi Ogura, Takashi Matsukawa, Meishoku Masahara, Takanobu Watanabe

J. Appl. Phys. 122, 144305 (2017)

https://doi.org/10.1063/1.4999195

Published: October 2017

View articletitled, Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder

Journal Articles

Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Takashi Matsukawa, Kunihiro Sakamoto, Kenichi Ishii, Shinichi O’uchi, Etsuro Sugimata, Hiromi Yamauchi, Eiichi Suzuki

Appl. Phys. Lett. 88, 072103 (2006)

https://doi.org/10.1063/1.2173715

Published: February 2006

View articletitled, Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

Journal Articles

Doping integrity diagnostics of planar transistor channel structures by scanning nonlinear dielectric microscopy

Takashi Matsukawa, Meishoku Masahara, Hisao Tanoue, Seigo Kanemaru, Eiichi Suzuki

J. Vac. Sci. Technol. B 24, 237–244 (2006)

https://doi.org/10.1116/1.2162576

Published: January 2006

View articletitled, Doping integrity diagnostics of planar transistor channel structures by scanning nonlinear dielectric microscopy

Journal Articles

Fabrication and characterization of vertical-type, self-aligned asymmetric double-gate metal-oxide-semiconductor field-effect-transistors

Meishoku Masahara, Yongxun Liu, Kenichi Ishii, Kunihiro Sakamoto, Takashi Matsukawa, Hisao Tanoue, Seigo Kanemaru, Eiichi Suzuki

Appl. Phys. Lett. 86, 123512 (2005)

https://doi.org/10.1063/1.1891289

Published: March 2005

View articletitled, Fabrication and characterization of vertical-type, self-aligned asymmetric double-gate metal-oxide-semiconductor field-effect-transistors

Journal Articles

Work function uniformity of Al – Ni alloys obtained by scanning Maxwell-stress microscopy as an effective tool for evaluating metal transistor gates

Takashi Matsukawa, Chiaki Yasumuro, Hiromi Yamauchi, Meishoku Masahara, Eiichi Suzuki, Seigo Kanemaru

Appl. Phys. Lett. 86, 094104 (2005)

https://doi.org/10.1063/1.1874309

Published: February 2005

View articletitled, Work function uniformity of Al – Ni alloys obtained by scanning Maxwell-stress microscopy as an effective tool for evaluating metal transistor gates

Journal Articles

Dopant profiling in vertical ultrathin channels of double-gate metal–oxide–semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

Meishoku Masahara, Shinichi Hosokawa, Takashi Matsukawa, Kazuhiko Endo, Yuuichi Naitou, Hisao Tanoue, Eiichi Suzuki

Appl. Phys. Lett. 85, 4139–4141 (2004)

https://doi.org/10.1063/1.1812571

Published: November 2004

View articletitled, Dopant profiling in vertical ultrathin channels of double-gate metal–oxide–semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

Journal Articles

Diagnostics of doping integrity in n + /p/n + transistor-channel structure by scanning nonlinear dielectric microscopy

Takashi Matsukawa, Chiaki Yasumuro, Meishoku Masahara, Hisao Tanoue, Seigo Kanemaru

Appl. Phys. Lett. 84, 3169–3171 (2004)

https://doi.org/10.1063/1.1707224

Published: April 2004

View articletitled, Diagnostics of doping integrity in n + /p/n + transistor-channel structure by scanning nonlinear dielectric microscopy

Journal Articles

Doping diagnosis by evaluation of the surface Fermi level using scanning Maxwell-stress microscopy

Takashi Matsukawa, Seigo Kanemaru, Meishoku Masahara, Masayoshi Nagao, Hisao Tanoue, Junji Itoh

Appl. Phys. Lett. 82, 2166–2168 (2003)

https://doi.org/10.1063/1.1564636

Published: March 2003

View articletitled, Doping diagnosis by evaluation of the surface Fermi level using scanning Maxwell-stress microscopy

Journal Articles

Silicon nanowire with programmable conductivity analyzed by scanning Maxwell-stress microscopy

Takashi Matsukawa, Seigo Kanemaru, Meishoku Masahara, Masayoshi Nagao, Hisao Tanoue, Junji Itoh

J. Vac. Sci. Technol. B 21, 664–669 (2003)

https://doi.org/10.1116/1.1545737

Published: February 2003

View articletitled, Silicon nanowire with programmable conductivity analyzed by scanning Maxwell-stress microscopy

Journal Articles

High-temperature real-time observation of surface defects induced by single ion irradiation using scanning-tunneling-microscope/ion-gun combined system

Kazuyoshi Shimada, Tetusya Ishimaru, Takuya Yamawaki, Makoto Uchigasaki, Kenichi Tomiki, Takashi Matsukawa, Iwao Ohdomari

J. Vac. Sci. Technol. B 19, 1989–1994 (2001)

https://doi.org/10.1116/1.1398540

Published: September 2001

View articletitled, High-temperature real-time observation of surface defects induced by single ion irradiation using scanning-tunneling-microscope/ion-gun combined system

Journal Articles

Emission-uniformity improvement and work-function reduction of Si emitter tips by ethylene gas exposure

Takashi Matsukawa, Seigo Kanemaru, Masayoshi Nagao, Hiroshi Yokoyama, Junji Itoh

J. Vac. Sci. Technol. B 19, 1911–1914 (2001)

https://doi.org/10.1116/1.1403443

Published: September 2001

View articletitled, Emission-uniformity improvement and work-function reduction of Si emitter tips by ethylene gas exposure

Journal Articles

Characterization of electrical conduction in silicon nanowire by scanning Maxwell-stress microscopy

Hideo Fujii, Takashi Matsukawa, Seigo Kanemaru, Hiroshi Yokoyama, Junji Itoh

Appl. Phys. Lett. 78, 2560–2562 (2001)

https://doi.org/10.1063/1.1365416

Published: April 2001

View articletitled, Characterization of electrical conduction in silicon nanowire by scanning Maxwell-stress microscopy

Journal Articles

Air-bridge-structured silicon nanowire and anomalous conductivity

Hideo Fujii, Seigo Kanemaru, Takashi Matsukawa, Junji Itoh

Appl. Phys. Lett. 75, 3986–3988 (1999)

https://doi.org/10.1063/1.125514

Published: December 1999

View articletitled, Air-bridge-structured silicon nanowire and anomalous conductivity

Journal Articles

Single-ion detection using nuclear track detector CR-39 plastic

Ken-ichi Hara, Meishoku Koh, Takashi Matsukawa, Takashi Tanii, Iwao Ohdomari

Rev. Sci. Instrum. 70, 4536–4538 (1999)

https://doi.org/10.1063/1.1150107

Published: December 1999

View articletitled, Single-ion detection using nuclear track detector CR-39 plastic

Journal Articles

Low-voltage operation from the tower structure metal–oxide–semiconductor field-effect transistor Si field emitter

Keisuke Koga, Seigo Kanemaru, Takashi Matsukawa, Junji Itoh

J. Vac. Sci. Technol. B 17, 588–591 (1999)

https://doi.org/10.1116/1.590599

Published: March 1999

View articletitled, Low-voltage operation from the tower structure metal–oxide–semiconductor field-effect transistor Si field emitter

Journal Articles

Current status of single ion implantation

Takahiro Shinada, Yoshinori Kumura, Jun Okabe, Takashi Matsukawa, Iwao Ohdomari

J. Vac. Sci. Technol. B 16, 2489–2493 (1998)

https://doi.org/10.1116/1.590196

Published: July 1998

View articletitled, Current status of single ion implantation

Journal Articles

Quantitative investigation of localized ion irradiation effects in n‐channel metal‐oxide‐semiconductor field‐effect transistors using single ion microprobe

Meishoku Koh, Katsuyuki Horita, Bungo Shigeta, Kai Igarashi, Takashi Matsukawa, Takashi Tanii, Shigetaka Mori, Iwao Ohdomari

Appl. Phys. Lett. 68, 3467–3469 (1996)

https://doi.org/10.1063/1.116076

Published: June 1996

View articletitled, Quantitative investigation of localized ion irradiation effects in n‐channel metal‐oxide‐semiconductor field‐effect transistors using single ion microprobe

Journal Articles

Quantitative analysis of radiation induced Si/SiO₂ interface defects by means of MeV He single ion irradiation

Meishoku Koh, Bungo Shigeta, Kai Igarashi, Takashi Matsukawa, Takashi Tanii, Shigetaka Mori, Iwao Ohdomari

Appl. Phys. Lett. 68, 1552–1554 (1996)

https://doi.org/10.1063/1.115696

Published: March 1996

View articletitled, Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation

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Steep switching in trimmed-gate tunnel FET

Effect of post-implantation annealing on Al–N isoelectronic trap formation in silicon: Al–N pair formation and defect recovery mechanisms

Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder

Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

Doping integrity diagnostics of planar transistor channel structures by scanning nonlinear dielectric microscopy

Fabrication and characterization of vertical-type, self-aligned asymmetric double-gate metal-oxide-semiconductor field-effect-transistors

Work function uniformity of Al – Ni alloys obtained by scanning Maxwell-stress microscopy as an effective tool for evaluating metal transistor gates

Dopant profiling in vertical ultrathin channels of double-gate metal–oxide–semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

Diagnostics of doping integrity in n + /p/n + transistor-channel structure by scanning nonlinear dielectric microscopy

Doping diagnosis by evaluation of the surface Fermi level using scanning Maxwell-stress microscopy

Silicon nanowire with programmable conductivity analyzed by scanning Maxwell-stress microscopy

High-temperature real-time observation of surface defects induced by single ion irradiation using scanning-tunneling-microscope/ion-gun combined system

Emission-uniformity improvement and work-function reduction of Si emitter tips by ethylene gas exposure

Characterization of electrical conduction in silicon nanowire by scanning Maxwell-stress microscopy

Air-bridge-structured silicon nanowire and anomalous conductivity

Single-ion detection using nuclear track detector CR-39 plastic

Low-voltage operation from the tower structure metal–oxide–semiconductor field-effect transistor Si field emitter

Current status of single ion implantation

Quantitative investigation of localized ion irradiation effects in n‐channel metal‐oxide‐semiconductor field‐effect transistors using single ion microprobe

Quantitative analysis of radiation induced Si/SiO₂ interface defects by means of MeV He single ion irradiation

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