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Takashi Jimbo
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Journal Articles

Transparent conductive thin films of single-wall carbon nanotubes encapsulating dopant molecules

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Naoki Kishi, Ikuma Miwa, Toshiya Okazaki, Takeshi Saito, Toshihisa Mizutani, Hiroaki Tsuchiya, Tetsuo Soga, Takashi Jimbo
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 063121 (2012)
https://doi.org/10.1063/1.3684811
Published: February 2012
View articletitled, Transparent conductive thin films of single-wall carbon nanotubes encapsulating dopant molecules
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Journal Articles

Features in optical absorption and photocurrent spectra of organic solar cells due to organic/organic interface

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Yasser A. M. Ismail, Tetsuo Soga, Takashi Jimbo
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 103109 (2011)
https://doi.org/10.1063/1.3586520
Published: May 2011
View articletitled, Features in optical absorption and photocurrent spectra of organic solar cells due to organic/organic interface
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Journal Articles

Characterization of AlInN/GaN structures on AlN templates for high-performance ultraviolet photodiodes

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Yusuke Sakai, Pum Chian Khai, Junki Ichikawa, Takashi Egawa, Takashi Jimbo
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 033512 (2011)
https://doi.org/10.1063/1.3544425
Published: February 2011
View articletitled, Characterization of AlInN/GaN structures on AlN templates for high-performance ultraviolet photodiodes
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Journal Articles

Improving photovoltaic properties by incorporating both single walled carbon nanotubes and functionalized multiwalled carbon nanotubes

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Ishwor Khatri, Sudip Adhikari, Hare Ram Aryal, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 093509 (2009)
https://doi.org/10.1063/1.3083544
Published: March 2009
View articletitled, Improving photovoltaic properties by incorporating both single walled carbon nanotubes and functionalized multiwalled carbon nanotubes
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Journal Articles

Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off

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Baijun Zhang, Takashi Egawa, Hiroyasu Ishikawa, Yang Liu, Takashi Jimbo
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 071113 (2005)
https://doi.org/10.1063/1.1863412
Published: February 2005
View articletitled, Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off
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Journal Articles

Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template

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Baijun Zhang, Takashi Egawa, Hiroyasu Ishikawa, Yang Liu, Takashi Jimbo
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 3170–3174 (2004)
https://doi.org/10.1063/1.1646442
Published: March 2004
View articletitled, Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template
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Journal Articles

n -type doping characteristics of O-implanted GaN

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Yoshitaka Nakano, Tetsu Kachi, Takashi Jimbo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 21, 2602–2604 (2003)
https://doi.org/10.1116/1.1621652
Published: November 2003
View articletitled, n -type doping characteristics of O-implanted GaN
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Journal Articles

Characteristics of SiO 2 /n- GaN interfaces with β- Ga 2 O 3 interlayers

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Yoshitaka Nakano, Tetsu Kachi, Takashi Jimbo
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 4336–4338 (2003)
https://doi.org/10.1063/1.1629371
Published: November 2003
View articletitled, Characteristics of SiO 2 /n- GaN interfaces with β- Ga 2 O 3 interlayers
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Journal Articles

Inversion behavior in thermally oxidized p- GaN metal–oxide–semiconductor capacitors

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Yoshitaka Nakano, Tetsu Kachi, Takashi Jimbo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 21, 2220–2222 (2003)
https://doi.org/10.1116/1.1612937
Published: September 2003
View articletitled, Inversion behavior in thermally oxidized p- GaN metal–oxide–semiconductor capacitors
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Journal Articles

Highly resistive GaN layers formed by ion implantation of Zn along the c axis

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Toshiyuki Oishi, Naruhisa Miura, Muneyoshi Suita, Takuma Nanjo, Yuji Abe, Tatsuo Ozeki, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 1662–1666 (2003)
https://doi.org/10.1063/1.1590412
Published: August 2003
View articletitled, Highly resistive GaN layers formed by ion implantation of Zn along the c axis
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Journal Articles

Electrical characterization of SiO 2 /n- GaN metal–insulator–semiconductor diodes

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Yoshitaka Nakano, Takashi Jimbo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 21, 1364–1368 (2003)
https://doi.org/10.1116/1.1591740
Published: June 2003
View articletitled, Electrical characterization of SiO 2 /n- GaN metal–insulator–semiconductor diodes
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Journal Articles

Electrical properties of thermally oxidized p- GaN metal–oxide–semiconductor diodes

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Yoshitaka Nakano, Tetsu Kachi, Takashi Jimbo
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 2443–2445 (2003)
https://doi.org/10.1063/1.1567811
Published: April 2003
View articletitled, Electrical properties of thermally oxidized p- GaN metal–oxide–semiconductor diodes
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Journal Articles

Effect of Be + + O + coimplantation on Be acceptors in GaN

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Yoshitaka Nakano, Tetsu Kachi, Takashi Jimbo
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 2082–2084 (2003)
https://doi.org/10.1063/1.1564641
Published: March 2003
View articletitled, Effect of Be + + O + coimplantation on Be acceptors in GaN
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Journal Articles

Interface properties of thermally oxidized n-GaN metal–oxide–semiconductor capacitors

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Yoshitaka Nakano, Takashi Jimbo
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 218–220 (2003)
https://doi.org/10.1063/1.1536029
Published: January 2003
View articletitled, Interface properties of thermally oxidized n-GaN metal–oxide–semiconductor capacitors
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Journal Articles

Electrical characterization of acceptor levels in Be-implanted GaN

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Yoshitaka Nakano, Takashi Jimbo
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 3990–3992 (2002)
https://doi.org/10.1063/1.1523633
Published: November 2002
View articletitled, Electrical characterization of acceptor levels in Be-implanted GaN
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Journal Articles

Electrical characterization of acceptor levels in Mg-doped GaN

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Yoshitaka Nakano, Takashi Jimbo
Journal: Journal of Applied Physics
J. Appl. Phys. 92, 5590–5592 (2002)
https://doi.org/10.1063/1.1512681
Published: November 2002
View articletitled, Electrical characterization of acceptor levels in Mg-doped GaN
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Journal Articles

Co-implantation of Si+N into GaN for n-type doping

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Yoshitaka Nakano, Takashi Jimbo
Journal: Journal of Applied Physics
J. Appl. Phys. 92, 3815–3819 (2002)
https://doi.org/10.1063/1.1504500
Published: October 2002
View articletitled, Co-implantation of Si+N into GaN for n-type doping
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Journal Articles

Interface properties of SiO 2 /n- GaN metal–insulator–semiconductor structures

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Yoshitaka Nakano, Takashi Jimbo
Journal: Applied Physics Letters
Appl. Phys. Lett. 80, 4756–4758 (2002)
https://doi.org/10.1063/1.1486266
Published: June 2002
View articletitled, Interface properties of SiO 2 /n- GaN metal–insulator–semiconductor structures
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Journal Articles

Growth of In x Ga 1−x As quantum dots by metal–organic chemical vapor deposition on Si substrates and in GaAs-based lasers

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Zaman Iqbal Kazi, Takashi Egawa, Masayoshi Umeno, Takashi Jimbo
Journal: Journal of Applied Physics
J. Appl. Phys. 90, 5463–5468 (2001)
https://doi.org/10.1063/1.1375010
Published: December 2001
View articletitled, Growth of In x Ga 1−x As quantum dots by metal–organic chemical vapor deposition on Si substrates and in GaAs-based lasers
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Journal Articles

Refractive index and degree of inhomogeneity of nanocrystalline TiO 2 thin films: Effects of substrate and annealing temperature

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Md. Mosaddeq-ur-Rahman, Guolin Yu, Tetsuo Soga, Takashi Jimbo, Hiroshi Ebisu, Masayoshi Umeno
Journal: Journal of Applied Physics
J. Appl. Phys. 88, 4634–4641 (2000)
https://doi.org/10.1063/1.1290456
Published: October 2000
View articletitled, Refractive index and degree of inhomogeneity of nanocrystalline TiO 2 thin films: Effects of substrate and annealing temperature
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