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Takashi Egawa
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Journal Articles

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 182102 (2024)
https://doi.org/10.1063/5.0187043
Published: May 2024
View article titled, Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate
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Journal Articles

Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers

Akira Mase, Yusuke Iida, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052206 (2023)
https://doi.org/10.1116/6.0002577
Published: September 2023
View article titled, Simulation analyses of carrier dynamics in <em>npn</em>-type GaN-heterojunction bipolar transistors with different hole-concentration <em>p</em>-base layers
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Journal Articles

Admittance frequency dispersion in lateral AlGaN/GaN Schottky barrier diodes: Other origins of two Gp/ω peaks

Noboru Fukuhara, Fumimasa Horikiri, Taiki Yamamoto, Takenori Osada, Kenji Kasahara, Takayuki Inoue, Takashi Egawa
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 085702 (2023)
https://doi.org/10.1063/5.0127499
Published: February 2023
View article titled, Admittance frequency dispersion in lateral AlGaN/GaN Schottky barrier diodes: Other origins of two <em>Gp</em>/<em>ω</em> peaks
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Journal Articles

High-temperature characteristics of GaN/InGaN multiple-quantum-well UV photodetectors fabricated on sapphire substrate: Analysis of photovoltaic and carrier transit time properties

Featured
Pradip Dalapati, Takashi Egawa, Makoto Miyoshi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 062210 (2022)
https://doi.org/10.1116/6.0002101
Published: November 2022
View article titled, High-temperature characteristics of GaN/InGaN multiple-quantum-well UV photodetectors fabricated on sapphire substrate: Analysis of photovoltaic and carrier transit time properties
Open the PDF for High-temperature characteristics of GaN/InGaN multiple-quantum-well UV photodetectors fabricated on sapphire substrate: Analysis of photovoltaic and carrier transit time properties in another window
Includes: Supplementary data
Journal Articles

Improved epilayer qualities and electrical characteristics for GaInN multiple-quantum-well photovoltaic cells and their operation under artificial sunlight and monochromatic light illuminations

Editor’s Pick
Makoto Miyoshi, Taiki Nakabayashi, Kosuke Yamamoto, Pradip Dalapati, Takashi Egawa
Journal: AIP Advances
AIP Advances 11, 095208 (2021)
https://doi.org/10.1063/5.0062346
Published: September 2021
View article titled, Improved epilayer qualities and electrical characteristics for GaInN multiple-quantum-well photovoltaic cells and their operation under artificial sunlight and monochromatic light illuminations
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Journal Articles

Demonstration of polarization-induced hole conduction in composition-graded AlInN layers grown by metalorganic chemical vapor deposition

Makoto Miyoshi, Taiki Nakabayashi, Haruka Takada, Takashi Egawa, Tetsuya Takeuchi
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 162102 (2021)
https://doi.org/10.1063/5.0048751
Published: April 2021
View article titled, Demonstration of polarization-induced hole conduction in composition-graded AlInN layers grown by metalorganic chemical vapor deposition
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Journal Articles

Impact of current-induced degradation process on the electro-optical characteristics of InGaN/GaN multiple-quantum-well photodetectors fabricated on sapphire substrate

Pradip Dalapati, Kosuke Yamamoto, Takashi Egawa, Makoto Miyoshi
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 021101 (2021)
https://doi.org/10.1063/5.0027127
Published: January 2021
View article titled, Impact of current-induced degradation process on the electro-optical characteristics of InGaN/GaN multiple-quantum-well photodetectors fabricated on sapphire substrate
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Includes: Supplementary data
Journal Articles

Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition

Makoto Miyoshi, Taiki Nakabayashi, Mizuki Yamanaka, Takashi Egawa, Tetsuya Takeuchi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 052205 (2020)
https://doi.org/10.1116/6.0000284
Published: September 2020
View article titled, Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to <em>c</em>-plane GaN on sapphire by metalorganic chemical vapor deposition
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Journal Articles

High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator

Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 041205 (2019)
https://doi.org/10.1116/1.5097338
Published: July 2019
View article titled, High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al<sub>2</sub>O<sub>3</sub> gate insulator
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Journal Articles

Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si

Editor’s Pick
Debaleen Biswas, Hirotaka Fujita, Naoki Torii, Takashi Egawa
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 225707 (2019)
https://doi.org/10.1063/1.5098365
Published: June 2019
View article titled, Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si
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Journal Articles

Distinct light emission from two-dimensional electron gas at a lattice-matched InAlN/AlGaN heterointerface

Lei Li, Daiki Hosomi, Yuta Miyachi, Makoto Miyoshi, Takashi Egawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 102102 (2018)
https://doi.org/10.1063/1.5023847
Published: March 2018
View article titled, Distinct light emission from two-dimensional electron gas at a lattice-matched InAlN/AlGaN heterointerface
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Journal Articles

High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films

Lei Li, Daiki Hosomi, Yuta Miyachi, Takeaki Hamada, Makoto Miyoshi, Takashi Egawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 102106 (2017)
https://doi.org/10.1063/1.4986311
Published: September 2017
View article titled, High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films
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Journal Articles

Self-forming graphene/Ni patterns on sapphire utilizing the pattern-controlled catalyst metal agglomeration technique

Makoto Miyoshi, Yukinori Arima, Toshiharu Kubo, Takashi Egawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 013103 (2017)
https://doi.org/10.1063/1.4973523
Published: January 2017
View article titled, Self-forming graphene/Ni patterns on sapphire utilizing the pattern-controlled catalyst metal agglomeration technique
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Journal Articles

Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors

Makoto Miyoshi, Tatsuya Tsutsumi, Gosuke Nishino, Yuta Miyachi, Mayuko Okada, Joseph J. Freedsman, Takashi Egawa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 050602 (2016)
https://doi.org/10.1116/1.4961908
Published: August 2016
View article titled, Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors
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Journal Articles

Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

Yoshihiro Sugawara, Yukari Ishikawa, Arata Watanabe, Makoto Miyoshi, Takashi Egawa
Journal: AIP Advances
AIP Advances 6, 045020 (2016)
https://doi.org/10.1063/1.4948451
Published: April 2016
View article titled, Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy
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Journal Articles

Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

Arata Watanabe, Joseph J. Freedsman, Yuya Urayama, Dennis Christy, Takashi Egawa
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 235705 (2015)
https://doi.org/10.1063/1.4937902
Published: December 2015
View article titled, Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition
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Journal Articles

Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

Makoto Miyoshi, Masaya Mizuno, Yukinori Arima, Toshiharu Kubo, Takashi Egawa, Tetsuo Soga
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 073102 (2015)
https://doi.org/10.1063/1.4928759
Published: August 2015
View article titled, Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors
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Journal Articles

Demonstration of NOx gas sensing for Pd/ZnO/GaN heterojunction diodes

Makoto Miyoshi, Shu Fujita, Takashi Egawa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 013001 (2015)
https://doi.org/10.1116/1.4906032
Published: January 2015
View article titled, Demonstration of NOx gas sensing for Pd/ZnO/GaN heterojunction diodes
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Journal Articles

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

Dennis Christy, Arata Watanabe, Takashi Egawa
Journal: AIP Advances
AIP Advances 4, 107104 (2014)
https://doi.org/10.1063/1.4897338
Published: October 2014
View article titled, Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate
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Journal Articles

Transfer-free graphene synthesis on insulating substrates via agglomeration phenomena of catalytic nickel films

Kazuya Banno, Masaya Mizuno, Kazuhisa Fujita, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa, Tetsuo Soga
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 082112 (2013)
https://doi.org/10.1063/1.4818342
Published: August 2013
View article titled, Transfer-free graphene synthesis on insulating substrates via agglomeration phenomena of catalytic nickel films
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