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Journal Articles

Scalable integration of periodically aligned 2D-MoS2 nanoribbon array

Y. Pak, Y. Kim, N. Lim, J.-W. Min, W. Park, W. Kim, Y. Jeong, H. Kim, K. Kim, S. Mitra, B. Xin, T.-W. Kim, I. S. Roqan, B. Cho, G.-Y. Jung
Journal: APL Materials
APL Mater. 6, 076102 (2018)
https://doi.org/10.1063/1.5038823
Published: July 2018
View article titled, Scalable integration of periodically aligned 2D-MoS<sub>2</sub> nanoribbon array
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Includes: Supplementary data
Journal Articles

InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion

Editor’s Pick
T. W. Kim, B. R. Albert, L. C. Kimerling, J. Michel
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 085111 (2018)
https://doi.org/10.1063/1.5018082
Published: February 2018
View article titled, InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion
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Journal Articles

Perpendicular magnetic anisotropy of amorphous [CoSiB/Pt]N thin films

T. W. Kim, Y. H. Choi, K. J. Lee, J. B. Yoon, J. H. Cho, C.-Y. You, M. H. Jung
Journal: Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 117, 17B502 (2015)
https://doi.org/10.1063/1.4906433
Published: January 2015
View article titled, Perpendicular magnetic anisotropy of amorphous [CoSiB/Pt]<sub>N</sub> thin films
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Journal Articles

Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment

A. S. Chang, E. S. Zech, T. W. Kim, Y. H. Lin, L. J. Mawst, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 142105 (2014)
https://doi.org/10.1063/1.4896781
Published: October 2014
View article titled, Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment
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Journal Articles

Field-induced domain wall motion of amorphous [CoSiB/Pt]N multilayers with perpendicular anisotropy

Y. H. Choi, K. J. Lee, J. B. Yoon, J. H. Cho, C.-Y. You, T. W. Kim, M. H. Jung
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 183901 (2014)
https://doi.org/10.1063/1.4876259
Published: May 2014
View article titled, Field-induced domain wall motion of amorphous [CoSiB/Pt]<sub>N</sub> multilayers with perpendicular anisotropy
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Journal Articles

Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

D. Koh, H. M. Kwon, T.-W. Kim, D.-H. Kim, Todd W. Hudnall, Christopher W. Bielawski, W. Maszara, D. Veksler, D. Gilmer, P. D. Kirsch, S. K. Banerjee
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 163502 (2014)
https://doi.org/10.1063/1.4871504
Published: April 2014
View article titled, L<sub>g</sub> = 100 nm In<sub>0.7</sub>Ga<sub>0.3</sub>As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer
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Journal Articles

Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy

T. W. Kim, K. Kim, J. J. Lee, T. F. Kuech, L. J. Mawst, N. P. Wells, S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 051915 (2014)
https://doi.org/10.1063/1.4864111
Published: February 2014
View article titled, Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy
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Journal Articles

Perpendicular magnetic anisotropic characteristics of amorphous [CoSiB/Pt]N multilayers

E. H. M. van der Heijden, K. J. Lee, Y. H. Choi, T. W. Kim, H. J. M. Swagten, C.-Y. You, M. H. Jung
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 102410 (2013)
https://doi.org/10.1063/1.4795310
Published: March 2013
View article titled, Perpendicular magnetic anisotropic characteristics of amorphous [CoSiB/Pt]<sub>N</sub> multilayers
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Journal Articles

Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator

D.-H. Kim, J. A. del Alamo, D. A. Antoniadis, J. Li, J.-M. Kuo, P. Pinsukanjana, Y.-C. Kao, P. Chen, A. Papavasiliou, C. King, E. Regan, M. Urteaga, B. Brar, T.-W. Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 223507 (2012)
https://doi.org/10.1063/1.4769230
Published: November 2012
View article titled, L<sub>g</sub> = 60 nm recessed In<sub>0.7</sub>Ga<sub>0.3</sub>As metal-oxide-semiconductor field-effect transistors with Al<sub>2</sub>O<sub>3</sub> insulator
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Journal Articles

Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy

T. W. Kim, T. J. Garrod, K. Kim, J. J. Lee, S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss, T. F. Kuech, Rao Tatavarti, L. J. Mawst
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 121120 (2012)
https://doi.org/10.1063/1.3693160
Published: March 2012
View article titled, Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy
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Journal Articles

Effect of the electron‐transport and hole‐transport layers on the electrical properties of organic photovoltaic cells performed by simulation and experiment

H. M. Choi, H. S. Han, J. Y. Lee, J. Y. Shin, T. W. Kim, J. W. Hong
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 877–878 (2011)
https://doi.org/10.1063/1.3666656
Published: December 2011
View article titled, Effect of the electron‐transport and hole‐transport layers on the electrical properties of organic photovoltaic cells performed by simulation and experiment
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Journal Articles

Formation mechanisms of metallic Zn nanodots by using ZnO thin films deposited on n -Si substrates

J. M. Yuk, J. Y. Lee, Y. Kim, Y. S. No, T. W. Kim, W. K. Choi
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 061901 (2010)
https://doi.org/10.1063/1.3475016
Published: August 2010
View article titled, Formation mechanisms of metallic Zn nanodots by using ZnO thin films deposited on n -Si substrates
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Journal Articles

Strain distributions and interband transitions of Cd x Zn 1 − x Te / ZnTe asymmetric double quantum dots with different degree of coupling

J. H. You, J. T. Woo, T. W. Kim, K. H. Yoo, H. S. Lee, H. L. Park
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 113530 (2009)
https://doi.org/10.1063/1.3267161
Published: December 2009
View article titled, Strain distributions and interband transitions of Cd x Zn 1 − x Te / ZnTe asymmetric double quantum dots with different degree of coupling
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Journal Articles

Interband transition energies and carrier distributions of Cd x Zn 1 − x Te / ZnTe quantum wires

J. H. You, J. T. Woo, T. W. Kim, K. H. Yoo, H. S. Lee, H. L. Park
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 063522 (2009)
https://doi.org/10.1063/1.3087785
Published: March 2009
View article titled, Interband transition energies and carrier distributions of Cd x Zn 1 − x Te / ZnTe quantum wires
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Journal Articles

Epitaxial growth of GaN films grown on single crystal Fe substrates

K. Okamoto, S. Inoue, N. Matsuki, T.-W. Kim, J. Ohta, M. Oshima, H. Fujioka, A. Ishii
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 251906 (2008)
https://doi.org/10.1063/1.3056117
Published: December 2008
View article titled, Epitaxial growth of GaN films grown on single crystal Fe substrates
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Journal Articles

Transformation mechanisms from metallic Zn nanocrystals to insulating ZnSiO 3 nanocrystals in a SiO 2 matrix due to thermal treatment

J. M. Yuk, J. Y. Lee, Y. S. No, T. W. Kim, W. K. Choi
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 221910 (2008)
https://doi.org/10.1063/1.3040320
Published: December 2008
View article titled, Transformation mechanisms from metallic Zn nanocrystals to insulating ZnSiO 3 nanocrystals in a SiO 2 matrix due to thermal treatment
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Journal Articles

Evolution mechanisms of the surface morphology of grains in ZnO thin films grown on p - In P substrates due to thermal annealing

J. M. Yuk, J. Y. Lee, Y. S. No, T. W. Kim, W. K. Choi
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 021904 (2008)
https://doi.org/10.1063/1.2957467
Published: July 2008
View article titled, Evolution mechanisms of the surface morphology of grains in ZnO thin films grown on p - In P substrates due to thermal annealing
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Journal Articles

Top-emitting organic light-emitting diodes with Ba ∕ Ag /indium tin oxide cathode and built-in potential analyses in these devices

J. T. Lim, J. H. Lee, G. Y. Yeom, E. H. Lee, T. W. Kim
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 26, 961–965 (2008)
https://doi.org/10.1116/1.2924333
Published: July 2008
View article titled, Top-emitting organic light-emitting diodes with Ba ∕ Ag /indium tin oxide cathode and built-in potential analyses in these devices
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Journal Articles

Formation mechanisms of ZnO amorphous layers due to thermal treatment of ZnO thin films grown on p ‐ In P (100) substrates

J. M. Yuk, J. Y. Lee, Y. S. No, T. W. Kim, W. K. Choi
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 083535 (2008)
https://doi.org/10.1063/1.2908874
Published: April 2008
View article titled, Formation mechanisms of ZnO amorphous layers due to thermal treatment of ZnO thin films grown on p ‐ In P (100) substrates
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Journal Articles

Formation mechanism of Zn Si O 3 nanoparticles embedded in an amorphous interfacial layer between a ZnO thin film and an n - Si (001) substrate due to thermal treatment

J. M. Yuk, J. Y. Lee, J. H. Jung, D. U. Lee, T. W. Kim, D. I. Son, W. K. Choi
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 083520 (2008)
https://doi.org/10.1063/1.2902477
Published: April 2008
View article titled, Formation mechanism of Zn Si O 3 nanoparticles embedded in an amorphous interfacial layer between a ZnO thin film and an n - Si (001) substrate due to thermal treatment
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