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Journal Articles

Growth of CdS heterojunctions on Cd0.9Zn0.1Te single crystals with H2S

Hao Yuan, T. Tiedje, Jingye Chen, Hui Wang, Brad Aitchison, Pawan Kumar, Yuxin Song
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 012206 (2024)
https://doi.org/10.1116/6.0003265
Published: January 2024
View article titled, Growth of CdS heterojunctions on Cd<sub>0.9</sub>Zn<sub>0.1</sub>Te single crystals with H<sub>2</sub>S
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Journal Articles

Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113 , 133708 (2013)]

P. M. Mooney, K. P. Watkins, Zenan Jiang, A. F. Basile, R. B. Lewis, V. Bahrami-Yekta, M. Masnadi-Shirazi, D. A. Beaton, T. Tiedje
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 019901 (2015)
https://doi.org/10.1063/1.4905390
Published: January 2015
View article titled, Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113 , 133708 (2013)]
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Journal Articles

Bandgap and optical absorption edge of GaAs1−xBix alloys with 0 < x < 17.8%

M. Masnadi-Shirazi, R. B. Lewis, V. Bahrami-Yekta, T. Tiedje, M. Chicoine, P. Servati
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 223506 (2014)
https://doi.org/10.1063/1.4904081
Published: December 2014
View article titled, Bandgap and optical absorption edge of GaAs<sub>1−x</sub>Bi<sub>x</sub> alloys with 0 &lt; x &lt; 17.8%
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Journal Articles

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures

K. Hild, Z. Batool, S. R. Jin, N. Hossain, I. P. Marko, T. JC. Hosea, X. Lu, T. Tiedje, S. J. Sweeney
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1566, 488–489 (2013)
https://doi.org/10.1063/1.4848498
Published: December 2013
View article titled, Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures
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Journal Articles

Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

M. K. Shakfa, D. Kalincev, X. Lu, S. R. Johnson, D. A. Beaton, T. Tiedje, A. Chernikov, S. Chatterjee, M. Koch
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 164306 (2013)
https://doi.org/10.1063/1.4826621
Published: October 2013
View article titled, Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells
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Journal Articles

Strong excitation intensity dependence of the photoluminescence line shape in GaAs1−xBix single quantum well samples

Yu. I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, S. R. Johnson, X. Lu, M. E. Ware, S.-Q. Yu, T. Tiedje, G. J. Salamo
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 144308 (2013)
https://doi.org/10.1063/1.4801429
Published: April 2013
View article titled, Strong excitation intensity dependence of the photoluminescence line shape in GaAs<sub>1−x</sub>Bi<sub>x</sub> single quantum well samples
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Journal Articles

Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

P. M. Mooney, K. P. Watkins, Zenan Jiang, A. F. Basile, R. B. Lewis, V. Bahrami-Yekta, M. Masnadi-Shirazi, D. A. Beaton, T. Tiedje
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 133708 (2013)
https://doi.org/10.1063/1.4798237
Published: April 2013
View article titled, Deep level defects in n-type GaAsBi and GaAs grown at low temperatures
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Journal Articles

Effects of hydrogen on the electronic properties of Ga(AsBi) alloys

G. Pettinari, A. Patanè, A. Polimeni, M. Capizzi, Xianfeng Lu, T. Tiedje
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 222103 (2012)
https://doi.org/10.1063/1.4768237
Published: November 2012
View article titled, Effects of hydrogen on the electronic properties of Ga(AsBi) alloys
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Journal Articles

Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy

R. B. Lewis, M. Masnadi-Shirazi, T. Tiedje
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 082112 (2012)
https://doi.org/10.1063/1.4748172
Published: August 2012
View article titled, Growth of high Bi concentration GaAs<sub>1−x</sub>Bi<sub>x</sub> by molecular beam epitaxy
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Journal Articles

The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Z. Batool, K. Hild, T. J. C. Hosea, X. Lu, T. Tiedje, S. J. Sweeney
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 113108 (2012)
https://doi.org/10.1063/1.4728028
Published: June 2012
View article titled, The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
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Journal Articles

Bi-induced p-type conductivity in nominally undoped Ga(AsBi)

G. Pettinari, A. Patanè, A. Polimeni, M. Capizzi, Xianfeng Lu, T. Tiedje
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 092109 (2012)
https://doi.org/10.1063/1.3690901
Published: March 2012
View article titled, Bi-induced <em>p</em>-type conductivity in nominally undoped Ga(AsBi)
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Journal Articles

Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes

N. Hossain, I. P. Marko, S. R. Jin, K. Hild, S. J. Sweeney, R. B. Lewis, D. A. Beaton, T. Tiedje
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 051105 (2012)
https://doi.org/10.1063/1.3681139
Published: January 2012
View article titled, Recombination mechanisms and band alignment of GaAs<sub>1−x</sub>Bi<sub>x</sub>/GaAs light emitting diodes
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Journal Articles

How much room for BiGa heteroantisites in GaAs1−xBix?

G. Ciatto, P. Alippi, A. Amore Bonapasta, T. Tiedje
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 141912 (2011)
https://doi.org/10.1063/1.3647635
Published: October 2011
View article titled, How much room for Bi<sub>Ga</sub> heteroantisites in GaAs<sub>1−</sub><em><sub>x</sub></em>Bi<em><sub>x</sub></em>?
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Journal Articles

Temperature dependence of hole mobility in GaAs 1 − x Bi x alloys

D. A. Beaton, R. B. Lewis, M. Masnadi-Shirazi, T. Tiedje
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 083708 (2010)
https://doi.org/10.1063/1.3493734
Published: October 2010
View article titled, Temperature dependence of hole mobility in GaAs 1 − x Bi x alloys
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Journal Articles

Structural analysis of thin epitaxial Y 2 O 3 films on sapphire

S. E. Webster, R. Kumaran, S. Penson, T. Tiedje
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C3A20–C3A23 (2010)
https://doi.org/10.1116/1.3368608
Published: April 2010
View article titled, Structural analysis of thin epitaxial Y 2 O 3 films on sapphire
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Journal Articles

Composition dependence of photoluminescence of GaAs 1 − x Bi x alloys

Xianfeng Lu, D. A. Beaton, R. B. Lewis, T. Tiedje, Yong Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 041903 (2009)
https://doi.org/10.1063/1.3191675
Published: July 2009
View article titled, Composition dependence of photoluminescence of GaAs 1 − x Bi x alloys
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Journal Articles

Influence of bismuth incorporation on the valence and conduction band edges of Ga As 1 − x Bi x

G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, E. C. Young, T. Tiedje
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 262105 (2008)
https://doi.org/10.1063/1.2953176
Published: July 2008
View article titled, Influence of bismuth incorporation on the valence and conduction band edges of Ga As 1 − x Bi x
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Journal Articles

Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs 1 − x Bi x

X. Lu, D. A. Beaton, R. B. Lewis, T. Tiedje, M. B. Whitwick
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 192110 (2008)
https://doi.org/10.1063/1.2918844
Published: May 2008
View article titled, Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs 1 − x Bi x
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Journal Articles

Photogenerated plasmons in GaAs 1 − x Bi x

S. Yoon, M. J. Seong, B. Fluegel, A. Mascarenhas, S. Tixier, T. Tiedje
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 082101 (2007)
https://doi.org/10.1063/1.2770760
Published: August 2007
View article titled, Photogenerated plasmons in GaAs 1 − x Bi x
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Journal Articles

Molecular beam epitaxy growth of the dilute nitride Ga As 1 − x N x with a helical resonator plasma source

N. Zangenberg, D. A. Beaton, T. Tiedje, S. Tixier, M. Adamcyk, R. Kumaran, J. A. MacKenzie, E. Nodwell, E. C. Young, G. I. Sproule
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 25, 850–856 (2007)
https://doi.org/10.1116/1.2748800
Published: June 2007
View article titled, Molecular beam epitaxy growth of the dilute nitride Ga As 1 − x N x with a helical resonator plasma source
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