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Journal Articles

A fluorescence XAFS measurement instrument in the soft x-ray region toward observation under operando conditions

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M. Honda, Y. Baba, I. Shimoyama, T. Sekiguchi
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 86, 035103 (2015)
https://doi.org/10.1063/1.4913653
Published: March 2015
View articletitled, A fluorescence XAFS measurement instrument in the soft x-ray region toward observation under operando conditions
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Journal Articles

Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields

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P. A. Mortemousque, T. Sekiguchi, C. Culan, M. P. Vlasenko, R. G. Elliman, L. S. Vlasenko, K. M. Itoh
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 082409 (2012)
https://doi.org/10.1063/1.4747723
Published: August 2012
View articletitled, Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields
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Journal Articles

Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface

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T. Matsuoka, L. S. Vlasenko, M. P. Vlasenko, T. Sekiguchi, K. M. Itoh
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 152107 (2012)
https://doi.org/10.1063/1.3702785
Published: April 2012
View articletitled, Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface
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Journal Articles

Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched 28Si

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M. Steger, A. Yang, T. Sekiguchi, K. Saeedi, M. L. W. Thewalt, M. O. Henry, K. Johnston, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 081301 (2011)
https://doi.org/10.1063/1.3651774
Published: October 2011
View articletitled, Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched 28Si
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Journal Articles

Optically-detected NMR of optically-hyperpolarized 31P neutral donors in 28Si

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M. Steger, T. Sekiguchi, A. Yang, K. Saeedi, M. E. Hayden, M. L. W. Thewalt, K. M. Itoh, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 102411 (2011)
https://doi.org/10.1063/1.3577614
Published: May 2011
View articletitled, Optically-detected NMR of optically-hyperpolarized 31P neutral donors in 28Si
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Journal Articles

Homogeneous linewidth of the P 31 bound exciton transition in silicon

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A. Yang, M. Steger, T. Sekiguchi, M. L. W. Thewalt, J. W. Ager, III, E. E. Haller
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 122113 (2009)
https://doi.org/10.1063/1.3238268
Published: September 2009
View articletitled, Homogeneous linewidth of the P 31 bound exciton transition in silicon
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Journal Articles

Surface effects on the luminescence degradation of hydride vapor-phase epitaxy-grown GaN induced by electron-beam irradiation

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Y. Wang, B. Dierre, T. Sekiguchi, Y. Z. Yao, X. L. Yuan, F. J. Xu, B. Shen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 27, 611–613 (2009)
https://doi.org/10.1116/1.3130148
Published: May 2009
View articletitled, Surface effects on the luminescence degradation of hydride vapor-phase epitaxy-grown GaN induced by electron-beam irradiation
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Journal Articles

Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation

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N. Fukata, M. Mitome, Y. Bando, M. Seoka, S. Matsushita, K. Murakami, J. Chen, T. Sekiguchi
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 203106 (2008)
https://doi.org/10.1063/1.3033226
Published: November 2008
View articletitled, Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation
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Journal Articles

Luminescence evolution of ZnO single crystal under low-energy electron beam irradiation

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B. Dierre, X. L. Yuan, T. Sekiguchi
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 043528 (2008)
https://doi.org/10.1063/1.2973190
Published: August 2008
View articletitled, Luminescence evolution of ZnO single crystal under low-energy electron beam irradiation
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Journal Articles

Effects of specimen preparation on the cathodoluminescence properties of ZnO nanoparticles

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B. Dierre, X. L. Yuan, N. Ohashi, T. Sekiguchi
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 083551 (2008)
https://doi.org/10.1063/1.2904858
Published: April 2008
View articletitled, Effects of specimen preparation on the cathodoluminescence properties of ZnO nanoparticles
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Journal Articles

Blue-emitting Al N : Eu 2 + nitride phosphor for field emission displays

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N. Hirosaki, R.-J. Xie, K. Inoue, T. Sekiguchi, B. Dierre, K. Tamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 061101 (2007)
https://doi.org/10.1063/1.2767182
Published: August 2007
View articletitled, Blue-emitting Al N : Eu 2 + nitride phosphor for field emission displays
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Journal Articles

Isotope effects between hydrogen and deuterium microwave plasmas on chemical vapor deposition homoepitaxial diamond growth

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N. Mizuochi, J. Isoya, J. Niitsuma, T. Sekiguchi, H. Watanabe, H. Kato, T. Makino, H. Okushi, S. Yamasaki
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 103501 (2007)
https://doi.org/10.1063/1.2727380
Published: May 2007
View articletitled, Isotope effects between hydrogen and deuterium microwave plasmas on chemical vapor deposition homoepitaxial diamond growth
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Journal Articles

Phosphorus doping and hydrogen passivation of donors and defects in silicon nanowires synthesized by laser ablation

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N. Fukata, J. Chen, T. Sekiguchi, S. Matsushita, T. Oshima, N. Uchida, K. Murakami, T. Tsurui, S. Ito
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 153117 (2007)
https://doi.org/10.1063/1.2721377
Published: April 2007
View articletitled, Phosphorus doping and hydrogen passivation of donors and defects in silicon nanowires synthesized by laser ablation
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Journal Articles

Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current

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J. Chen, T. Sekiguchi, N. Fukata, M. Takase, T. Chikyow, K. Yamabe, R. Hasunuma, Y. Akasaka, S. Inumiya, Y. Nara, K. Yamada
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 222104 (2006)
https://doi.org/10.1063/1.2392988
Published: November 2006
View articletitled, Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current
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Journal Articles

Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation

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N. Fukata, J. Chen, T. Sekiguchi, N. Okada, K. Murakami, T. Tsurui, S. Ito
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 203109 (2006)
https://doi.org/10.1063/1.2372698
Published: November 2006
View articletitled, Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation
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Journal Articles

Photon stimulated ion desorption from condensed thiophene photoexcited around the S 1 s -edge

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M. L. M. Rocco, T. Sekiguchi, Y. Baba
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 2117–2121 (2006)
https://doi.org/10.1116/1.2357742
Published: October 2006
View articletitled, Photon stimulated ion desorption from condensed thiophene photoexcited around the S 1 s -edge
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Journal Articles

Single-crystalline cubic structured InP nanosprings

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G. Z. Shen, Y. Bando, C. Y. Zhi, X. L. Yuan, T. Sekiguchi, D. Golberg
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 243106 (2006)
https://doi.org/10.1063/1.2208933
Published: June 2006
View articletitled, Single-crystalline cubic structured InP nanosprings
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Journal Articles

Hydrogen-vacancy related defect in chemical vapor deposition homoepitaxial diamond films studied by electron paramagnetic resonance and cathodoluminescence

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N. Mizuochi, H. Watanabe, H. Okushi, S. Yamasaki, J. Niitsuma, T. Sekiguchi
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 091912 (2006)
https://doi.org/10.1063/1.2176860
Published: March 2006
View articletitled, Hydrogen-vacancy related defect in chemical vapor deposition homoepitaxial diamond films studied by electron paramagnetic resonance and cathodoluminescence
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Journal Articles

Single-crystalline nanotubes of IIB-VI semiconductors

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J. Q. Hu, Y. Bando, J. H. Zhan, M. Y. Liao, D. Golberg, X. L. Yuan, T. Sekiguchi
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 113107 (2005)
https://doi.org/10.1063/1.2042634
Published: September 2005
View articletitled, Single-crystalline nanotubes of IIB-VI semiconductors
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Journal Articles

Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction

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S. Yoshida, T. Sekiguchi, K. M. Itoh
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 031903 (2005)
https://doi.org/10.1063/1.1995946
Published: July 2005
View articletitled, Atomically straight steps on vicinal Si(111) surfaces prepared by step-parallel current in the kink-up direction
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