Page 1 | Search Results | AIP Publishing

1-20 of 58

Sort by

Sort Order Select

Journal Articles

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

P. P. Paskov, M. Slomski, J. H. Leach, J. F. Muth, T. Paskova

AIP Advances 7, 095302 (2017)

https://doi.org/10.1063/1.4989626

Published: September 2017

View article titled, Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

Journal Articles

Anisotropic thermal conductivity of β-Ga₂O₃ at elevated temperatures: Effect of Sn and Fe dopants

M. Slomski, N. Blumenschein, P. P. Paskov, J. F. Muth, T. Paskova

J. Appl. Phys. 121, 235104 (2017)

https://doi.org/10.1063/1.4986478

Published: June 2017

View article titled, Anisotropic thermal conductivity of β-Ga<sub>2</sub>O<sub>3</sub> at elevated temperatures: Effect of Sn and Fe dopants

Journal Articles

Erratum: “Electron band bending of polar, semipolar and non-polar GaN surfaces” [J. Appl. Phys. 119 , 105303 (2016)]

I. Bartoš, O. Romanyuk, J. Houdkova, P. P. Paskov, T. Paskova, P. Jiříček

J. Appl. Phys. 119, 159901 (2016)

https://doi.org/10.1063/1.4947183

Published: April 2016

View article titled, Erratum: “Electron band bending of polar, semipolar and non-polar GaN surfaces” [J. Appl. Phys. 119 , 105303 (2016)]

Journal Articles

Electron band bending of polar, semipolar and non-polar GaN surfaces

I. Bartoš, O. Romanyuk, J. Houdkova, P. P. Paskov, T. Paskova, P. Jiříček

J. Appl. Phys. 119, 105303 (2016)

https://doi.org/10.1063/1.4943592

Published: March 2016

View article titled, Electron band bending of polar, semipolar and non-polar GaN surfaces

Journal Articles

Modulated optical sensitivity with nanostructured gallium nitride

S. J. Wilkins, M. J. Slomski, T. Paskova, J. L. Weyher, A. Ivanisevic

Appl. Phys. Lett. 106, 151602 (2015)

https://doi.org/10.1063/1.4918739

Published: April 2015

View article titled, Modulated optical sensitivity with nanostructured gallium nitride

Journal Articles

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

O. Romanyuk, S. Fernández-Garrido, P. Jiříček, I. Bartoš, L. Geelhaar, O. Brandt, T. Paskova

Appl. Phys. Lett. 106, 021602 (2015)

https://doi.org/10.1063/1.4905651

Published: January 2015

View article titled, Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

Includes: Supplementary data

Journal Articles

Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN { 10 1 ¯ 1 } and GaN { 20 2 ¯ 1 } surfaces

O. Romanyuk, P. Jiříček, T. Paskova, I. Bartoš

J. Appl. Phys. 116, 104909 (2014)

https://doi.org/10.1063/1.4894708

Published: September 2014

View article titled, Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN { 10 1 ¯ 1 } and GaN { 20 2 ¯ 1 } surfaces

Journal Articles

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

N. Killat, M. Montes Bajo, T. Paskova, K. R. Evans, J. Leach, X. Li, Ü. Özgür, H. Morkoç, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D. E. Walker, M. Trejo, G. D. Via, J. D. Blevins, M. Kuball

Appl. Phys. Lett. 103, 193507 (2013)

https://doi.org/10.1063/1.4829062

Published: November 2013

View article titled, Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Journal Articles

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

A. T. Roberts, A. Mohanta, H. O. Everitt, J. H. Leach, D. Van Den Broeck, A. M. Hosalli, T. Paskova, S. M. Bedair

Appl. Phys. Lett. 103, 181106 (2013)

https://doi.org/10.1063/1.4827536

Published: October 2013

View article titled, Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

Journal Articles

GaN polarity determination by photoelectron diffraction

O. Romanyuk, P. Jiříček, T. Paskova, I. Bieloshapka, I. Bartoš

Appl. Phys. Lett. 103, 091601 (2013)

https://doi.org/10.1063/1.4819761

Published: August 2013

View article titled, GaN polarity determination by photoelectron diffraction

Journal Articles

Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation

S. J. Wilkins, T. Paskova, A. Ivanisevic

J. Appl. Phys. 114, 064907 (2013)

https://doi.org/10.1063/1.4817899

Published: August 2013

View article titled, Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation

Includes: Supplementary data

Journal Articles

Charge transfer in semi-insulating Fe-doped GaN

J. Dashdorj, M. E. Zvanut, J. G. Harrison, K. Udwary, T. Paskova

J. Appl. Phys. 112, 013712 (2012)

https://doi.org/10.1063/1.4732352

Published: July 2012

View article titled, Charge transfer in semi-insulating Fe-doped GaN

Journal Articles

Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

P. Gladkov, E. Hulicius, T. Paskova, E. Preble, K. R. Evans

Appl. Phys. Lett. 100, 031908 (2012)

https://doi.org/10.1063/1.3678195

Published: January 2012

View article titled, Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Journal Articles

Anisotropy of free-carrier absorption and diffusivity in m-plane GaN

P. Ščajev, K. Jarašiūnas, Ü. Özgür, H. Morkoç, J. Leach, T. Paskova

Appl. Phys. Lett. 100, 022112 (2012)

https://doi.org/10.1063/1.3674306

Published: January 2012

View article titled, Anisotropy of free-carrier absorption and diffusivity in m-plane GaN

Journal Articles

Dielectric response functions of the ( 000 1 ¯ ) , ( 10 1 ¯ 3 ) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy

O. Romanyuk, P. Jiricek, J. Zemek, S. Tougaard, T. Paskova

J. Appl. Phys. 110, 043507 (2011)

https://doi.org/10.1063/1.3622674

Published: August 2011

View article titled, Dielectric response functions of the ( 000 1 ¯ ) , ( 10 1 ¯ 3 ) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy

Journal Articles

Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy

D. O. Dumcenco, S. Levcenco, Y. S. Huang, C. L. Reynolds, Jr., J. G. Reynolds, K. K. Tiong, T. Paskova, K. R. Evans

J. Appl. Phys. 109, 123508 (2011)

https://doi.org/10.1063/1.3592343

Published: June 2011

View article titled, Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy

Journal Articles

InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates

M. Wu, J. H. Leach, X. Ni, X. Li, J. Xie, S. Doğan, Ü. Özgür, H. Morkoç, T. Paskova, E. Preble, K. R. Evans, Chang-Zhi Lu

J. Vac. Sci. Technol. B 28, 908–911 (2010)

https://doi.org/10.1116/1.3481138

Published: August 2010

View article titled, InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates

Journal Articles

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, T. Paskova, G. Mulholland, K. R. Evans

Appl. Phys. Lett. 97, 031110 (2010)

https://doi.org/10.1063/1.3465658

Published: July 2010

View article titled, InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Journal Articles

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

J. H. Leach, C. Y. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, T. Paskova, E. Preble, K. R. Evans

Appl. Phys. Lett. 96, 133505 (2010)

https://doi.org/10.1063/1.3358392

Published: March 2010

View article titled, Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Journal Articles

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

J. H. Leach, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, T. Paskova, E. Preble, K. R. Evans, Chang-Zhi Lu

Appl. Phys. Lett. 96, 102109 (2010)

https://doi.org/10.1063/1.3358192

Published: March 2010

View article titled, Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

NARROW

Topics

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

Anisotropic thermal conductivity of β-Ga₂O₃ at elevated temperatures: Effect of Sn and Fe dopants

Erratum: “Electron band bending of polar, semipolar and non-polar GaN surfaces” [J. Appl. Phys. 119 , 105303 (2016)]

Electron band bending of polar, semipolar and non-polar GaN surfaces

Modulated optical sensitivity with nanostructured gallium nitride

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN { 10 1 ¯ 1 } and GaN { 20 2 ¯ 1 } surfaces

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

GaN polarity determination by photoelectron diffraction

Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation

Charge transfer in semi-insulating Fe-doped GaN

Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Anisotropy of free-carrier absorption and diffusivity in m-plane GaN

Dielectric response functions of the ( 000 1 ¯ ) , ( 10 1 ¯ 3 ) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy

Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy

InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only