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Journal Articles

Planar photonic crystal

Dušan Nedeljković, T. P. Pearsall, S. A. Kuchinsky, M. D. Mikhailov, Marko Lončar, Axel Scherer
Journal: AIP Conference Proceedings
AIP Conf. Proc. 560, 107–114 (2001)
https://doi.org/10.1063/1.1372720
Published: April 2001
View article titled, Planar photonic crystal
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Journal Articles

Local structure of ( Ge 4 Si 4 ) 5 monolayer strained-layer superlattice probed by fluorescence x-ray absorption fine structure

S. Q. Wei, H. Oyanagi, K. Sakamoto, Y. Takeda, T. P. Pearsall
Journal: AIP Conference Proceedings
AIP Conf. Proc. 554, 483–490 (2001)
https://doi.org/10.1063/1.1363120
Published: February 2001
View article titled, Local structure of ( Ge 4 Si 4 ) 5 monolayer strained-layer superlattice probed by fluorescence x-ray absorption fine structure
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Journal Articles

Voltage-tunable near-infrared photodetector: Versatile component for optical communication systems

G. Masini, L. Colace, G. Assanto, T. P. Pearsall, H. Presting
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 16, 2619–2622 (1998)
https://doi.org/10.1116/1.590244
Published: September 1998
View article titled, Voltage-tunable near-infrared photodetector: Versatile component for optical communication systems
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Journal Articles

Impact ionization in Al x Ga 1−x As/GaAs superlattices

T. P. Pearsall
Journal: Applied Physics Letters
Appl. Phys. Lett. 73, 1227–1229 (1998)
https://doi.org/10.1063/1.122135
Published: August 1998
View article titled, Impact ionization in Al x Ga 1−x As/GaAs superlattices
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Journal Articles

Temperature dependence of mobility in n -type short-period Si–Ge superlattices

T. P. Pearsall, A. DiVergilio, Pierre Gassot, Duncan Maude, Hartmut Presting, Erich Kasper, W. Jäger, Dirk Stenkamp
Journal: Applied Physics Letters
Appl. Phys. Lett. 72, 76–78 (1998)
https://doi.org/10.1063/1.120649
Published: January 1998
View article titled, Temperature dependence of mobility in n -type short-period Si–Ge superlattices
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Journal Articles

Multivariable dependence of modulation spectroscopy in semiconductor superlattices

T. P. Pearsall, A. DiVergilio
Journal: Applied Physics Letters
Appl. Phys. Lett. 71, 2436–2438 (1997)
https://doi.org/10.1063/1.120084
Published: October 1997
View article titled, Multivariable dependence of modulation spectroscopy in semiconductor superlattices
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Journal Articles

Voltage tunable SiGe photodetector: A novel tool for crypted optical communications through wavelength mixing

G. Masini, L. Colace, F. Galluzzi, G. Assanto, T. P. Pearsall, H. Presting
Journal: Applied Physics Letters
Appl. Phys. Lett. 70, 3194–3196 (1997)
https://doi.org/10.1063/1.119155
Published: June 1997
View article titled, Voltage tunable SiGe photodetector: A novel tool for crypted optical communications through wavelength mixing
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Journal Articles

Selective surface modifications with a scanning tunneling microscope

S. L. Konsek, R. J. N. Coope, T. P. Pearsall, T. Tiedje
Journal: Applied Physics Letters
Appl. Phys. Lett. 70, 1846–1848 (1997)
https://doi.org/10.1063/1.118709
Published: April 1997
View article titled, Selective surface modifications with a scanning tunneling microscope
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Journal Articles

Real-time, noninvasive temperature control of wafer processing based on diffusive reflectance spectroscopy

Zhongze Wang, Siu L. Kwan, T. P. Pearsall, J. L. Booth, B. T. Beard, S. R. Johnson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 15, 116–121 (1997)
https://doi.org/10.1116/1.589235
Published: January 1997
View article titled, Real-time, noninvasive temperature control of wafer processing based on diffusive reflectance spectroscopy
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Journal Articles

Precision of noninvasive temperature measurement by diffuse reflectance spectroscopy

T. P. Pearsall, Stevan R. Saban, James Booth, Barrett T. Beard, Jr., S. R. Johnson
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 66, 4977–4980 (1995)
https://doi.org/10.1063/1.1146184
Published: October 1995
View article titled, Precision of noninvasive temperature measurement by diffuse reflectance spectroscopy
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Journal Articles

Deposition of AlN at lower temperatures by atmospheric metalorganic chemical vapor deposition using dimethylethylamine alane and ammonia

J. N. Kidder, Jr., J. S. Kuo, A. Ludviksson, T. P. Pearsall, J. W. Rogers, Jr., John M. Grant, Lynn R. Allen, Sheng Teng Hsu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 13, 711–715 (1995)
https://doi.org/10.1116/1.579812
Published: May 1995
View article titled, Deposition of AlN at lower temperatures by atmospheric metalorganic chemical vapor deposition using dimethylethylamine alane and ammonia
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Journal Articles

Comparison of light emission from stain‐etch and anodic‐etch silicon films

J. N. Kidder, Jr., P. S. Williams, T. P. Pearsall, D. T. Schwartz, Brett Z. Nosho
Journal: Applied Physics Letters
Appl. Phys. Lett. 61, 2896–2898 (1992)
https://doi.org/10.1063/1.108041
Published: December 1992
View article titled, Comparison of light emission from stain‐etch and anodic‐etch silicon films
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Journal Articles

Time‐resolved photoluminescence in anodically etched silicon

T. P. Pearsall, Jeff C. Adams, Jen E. Wu, Brett Z. Nosho, Chak Aw, J. C. Patton
Journal: Journal of Applied Physics
J. Appl. Phys. 71, 4470–4474 (1992)
https://doi.org/10.1063/1.350790
Published: May 1992
View article titled, Time‐resolved photoluminescence in anodically etched silicon
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Journal Articles

Differential optical absorption spectroscopy in Ge‐Si superlattices

T. P. Pearsall
Journal: Applied Physics Letters
Appl. Phys. Lett. 60, 1712–1714 (1992)
https://doi.org/10.1063/1.107194
Published: April 1992
View article titled, Differential optical absorption spectroscopy in Ge‐Si superlattices
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Journal Articles

New optical transitions in Ge–Si ordered atomic‐layer structures

T. P. Pearsall, J. Bevk, L. C. Feldman, J. M. Bonar, J. P. Mannaerts, A. Ourmazd
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 5, 1274–1278 (1987)
https://doi.org/10.1116/1.583818
Published: July 1987
View article titled, New optical transitions in Ge–Si ordered atomic‐layer structures
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Journal Articles

Structure and optical properties of Ge‐Si ordered superlattices

J. Bevk, A. Ourmazd, L. C. Feldman, T. P. Pearsall, J. M. Bonar, B. A. Davidson, J. P. Mannaerts
Journal: Applied Physics Letters
Appl. Phys. Lett. 50, 760–762 (1987)
https://doi.org/10.1063/1.98037
Published: March 1987
View article titled, Structure and optical properties of Ge‐Si ordered superlattices
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Journal Articles

Ge0.6Si0.4 rib waveguide avalanche photodetectors for 1.3 μm operation

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean
Journal: Applied Physics Letters
Appl. Phys. Lett. 49, 809–811 (1986)
https://doi.org/10.1063/1.97554
Published: September 1986
View article titled, Ge<sub>0.6</sub>Si<sub>0.4</sub> rib waveguide avalanche photodetectors for 1.3 μm operation
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Journal Articles

High photoconductive gain in GexSi1−x/Si strained‐layer superlattice detectors operating at λ=1.3 μm

H. Temkin, J. C. Bean, T. P. Pearsall, N. A. Olsson, D. V. Lang
Journal: Applied Physics Letters
Appl. Phys. Lett. 49, 155–157 (1986)
https://doi.org/10.1063/1.97209
Published: July 1986
View article titled, High photoconductive gain in Ge<sub><em>x</em></sub>Si<sub>1−<em>x</em></sub>/Si strained‐layer superlattice detectors operating at λ=1.3 μm
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Journal Articles

GexSi1−x strained‐layer superlattice waveguide photodetectors operating near 1.3 μm

H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan, S. Luryi
Journal: Applied Physics Letters
Appl. Phys. Lett. 48, 963–965 (1986)
https://doi.org/10.1063/1.96624
Published: April 1986
View article titled, Ge<sub><em>x</em></sub>Si<sub>1−<em>x</em></sub> strained‐layer superlattice waveguide photodetectors operating near 1.3 μm
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Journal Articles

1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy

H. Temkin, K. Alavi, W. R. Wagner, T. P. Pearsall, A. Y. Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 42, 845–847 (1983)
https://doi.org/10.1063/1.93786
Published: May 1983
View article titled, 1.5–1.6‐μm Ga<sub>0.47</sub>In<sub>0.53</sub>As/Al<sub>0.48</sub>In<sub>0.52</sub>As multiquantum well lasers grown by molecular beam epitaxy
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