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Journal Articles

Nucleation limited switching (NLS) model for HfO₂-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics

N. Gong, X. Sun, H. Jiang, K. S. Chang-Liao, Q. Xia, T. P. Ma

Appl. Phys. Lett. 112, 262903 (2018)

https://doi.org/10.1063/1.5010207

Published: June 2018

View articletitled, Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics

Journal Articles

Distinguishing the laser-induced spin precession excitation mechanism in Fe/MgO(001) through field orientation dependent measurements

T. P. Ma, S. F. Zhang, Y. Yang, Z. H. Chen, H. B. Zhao, Y. Z. Wu

J. Appl. Phys. 117, 013903 (2015)

https://doi.org/10.1063/1.4905249

Published: January 2015

View articletitled, Distinguishing the laser-induced spin precession excitation mechanism in Fe/MgO(001) through field orientation dependent measurements

Includes: Supplementary data

Journal Articles

Different temperature scaling of strain-induced magneto-crystalline anisotropy and Gilbert damping in Co₂FeAl film epitaxied on GaAs

H. C. Yuan, S. H. Nie, T. P. Ma, Z. Zhang, Z. Zheng, Z. H. Chen, Y. Z. Wu, J. H. Zhao, H. B. Zhao, L. Y. Chen

Appl. Phys. Lett. 105, 072413 (2014)

https://doi.org/10.1063/1.4893949

Published: August 2014

View articletitled, Different temperature scaling of strain-induced magneto-crystalline anisotropy and Gilbert damping in Co2FeAl film epitaxied on GaAs

Journal Articles

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

Jie Yang, Sharon Cui, T. P. Ma, Ting-Hsiang Hung, Digbijoy Nath, Sriram Krishnamoorthy, Siddharth Rajan

Appl. Phys. Lett. 103, 223507 (2013)

https://doi.org/10.1063/1.4834698

Published: November 2013

View articletitled, Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

Journal Articles

Interface trap evaluation of Pd/Al₂O₃/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

R. D. Long, C. M. Jackson, J. Yang, A. Hazeghi, C. Hitzman, S. Majety, A. R. Arehart, Y. Nishi, T. P. Ma, S. A. Ringel, P. C. McIntyre

Appl. Phys. Lett. 103, 201607 (2013)

https://doi.org/10.1063/1.4827102

Published: November 2013

View articletitled, Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

Journal Articles

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

Jie Yang, Sharon Cui, T. P. Ma, Ting-Hsiang Hung, Digbijoy Nath, Sriram Krishnamoorthy, Siddharth Rajan

Appl. Phys. Lett. 103, 173520 (2013)

https://doi.org/10.1063/1.4826922

Published: October 2013

View articletitled, A study of electrically active traps in AlGaN/GaN high electron mobility transistor

Journal Articles

Three-dimensional mapping of the anisotropic magnetoresistance in Fe₃O₄ single crystal thin films

Z. Ding, J. X. Li, J. Zhu, T. P. Ma, C. Won, Y. Z. Wu

J. Appl. Phys. 113, 17B103 (2013)

https://doi.org/10.1063/1.4796178

Published: March 2013

View articletitled, Three-dimensional mapping of the anisotropic magnetoresistance in Fe3O4 single crystal thin films

Journal Articles

Study of gate oxide traps in HfO₂/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

X. Sun, O. I. Saadat, K. S. Chang-Liao, T. Palacios, S. Cui, T. P. Ma

Appl. Phys. Lett. 102, 103504 (2013)

https://doi.org/10.1063/1.4795717

Published: March 2013

View articletitled, Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Journal Articles

Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors

Xiao Sun, Clement Merckling, Guy Brammertz, Dennis Lin, Johan Dekoster, Sharon Cui, T. P. Ma

J. Appl. Phys. 111, 054102 (2012)

https://doi.org/10.1063/1.3691898

Published: March 2012

View articletitled, Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors

Journal Articles

Effect of hydrogen on the chemical bonding and band structure at the Al₂O₃/In_0.53Ga_0.47As interface

Pini Shekhter, Lior Kornblum, Zuoguang Liu, Sharon Cui, T. P. Ma, Moshe Eizenberg

Appl. Phys. Lett. 99, 232103 (2011)

https://doi.org/10.1063/1.3664778

Published: December 2011

View articletitled, Effect of hydrogen on the chemical bonding and band structure at the Al2O3/In0.53Ga0.47As interface

Journal Articles

Effect of H on interface properties of Al₂O₃/In_0.53Ga_0.47As

Zuoguang Liu, Sharon Cui, Pini Shekhter, Xiao Sun, Lior Kornblum, Jie Yang, Moshe Eizenberg, K. S. Chang-Liao, T. P. Ma

Appl. Phys. Lett. 99, 222104 (2011)

https://doi.org/10.1063/1.3665395

Published: November 2011

View articletitled, Effect of H on interface properties of Al2O3/In0.53Ga0.47As

Journal Articles

Retention mechanism study of the ferroelectric field effect transistor

Xiao Pan, T. P Ma

Appl. Phys. Lett. 99, 013505 (2011)

https://doi.org/10.1063/1.3609323

Published: July 2011

View articletitled, Retention mechanism study of the ferroelectric field effect transistor

Journal Articles

Inelastic electron tunneling spectroscopy study of ultrathin Al 2 O 3 – TiO 2 dielectric stack on Si

Zuoguang Liu, Sharon Cui, Lior Kornblum, Moshe Eizenberg, Ming-Feng Chang, T. P. Ma

Appl. Phys. Lett. 97, 202905 (2010)

https://doi.org/10.1063/1.3518478

Published: November 2010

View articletitled, Inelastic electron tunneling spectroscopy study of ultrathin Al 2 O 3 – TiO 2 dielectric stack on Si

Journal Articles

Determination of energy and spatial distributions of traps in ultrathin dielectrics by use of inelastic electron tunneling spectroscopy

Zuoguang Liu, T. P. Ma

Appl. Phys. Lett. 97, 172102 (2010)

https://doi.org/10.1063/1.3506904

Published: October 2010

View articletitled, Determination of energy and spatial distributions of traps in ultrathin dielectrics by use of inelastic electron tunneling spectroscopy

Journal Articles

Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels

Abigail Lubow, Sohrab Ismail-Beigi, T. P. Ma

Appl. Phys. Lett. 96, 122105 (2010)

https://doi.org/10.1063/1.3367708

Published: March 2010

View articletitled, Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels

Journal Articles

Electrical properties and interfacial structure of epitaxial LaAlO 3 on Si (001)

J. W. Reiner, A. Posadas, M. Wang, M. Sidorov, Z. Krivokapic, F. J. Walker, T. P. Ma, C. H. Ahn

J. Appl. Phys. 105, 124501 (2009)

https://doi.org/10.1063/1.3148243

Published: June 2009

View articletitled, Electrical properties and interfacial structure of epitaxial LaAlO 3 on Si (001)

Journal Articles

Demonstration of enhancement-mode GaAs metal-insulator-semiconductor field effect transistor with channel inversion using Si 3 N 4 as gate dielectric

J. F. Zheng, W. Tsai, W. P. Li, X. W. Wang, T. P. Ma

Appl. Phys. Lett. 92, 232904 (2008)

https://doi.org/10.1063/1.2943148

Published: June 2008

View articletitled, Demonstration of enhancement-mode GaAs metal-insulator-semiconductor field effect transistor with channel inversion using Si 3 N 4 as gate dielectric

Journal Articles

Molecular beam epitaxy growth of InAs and In 0.8 Ga 0.2 As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications

Ning Li, Eric S. Harmon, David B. Salzman, Dmitri N. Zakharov, Jong-Hyeok Jeon, Eric Stach, Jerry M. Woodall, X. W. Wang, T. P. Ma, Fred Walker

J. Vac. Sci. Technol. B 26, 1187–1190 (2008)

https://doi.org/10.1116/1.2912086

Published: May 2008

View articletitled, Molecular beam epitaxy growth of InAs and In 0.8 Ga 0.2 As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications

Journal Articles

Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al 2 O 3 Dielectric

Ning Li, Eric S. Harmon, James Hyland, David B. Salzman, T. P. Ma, Yi Xuan, P. D. Ye

Appl. Phys. Lett. 92, 143507 (2008)

https://doi.org/10.1063/1.2908926

Published: April 2008

View articletitled, Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al 2 O 3 Dielectric

Journal Articles

Ga 2 O 3 ( Gd 2 O 3 ) ∕ Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion

J. F. Zheng, W. Tsai, T. D. Lin, Y. J. Lee, C. P. Chen, M. Hong, J. Kwo, S. Cui, T. P. Ma

Appl. Phys. Lett. 91, 223502 (2007)

https://doi.org/10.1063/1.2817742

Published: November 2007

View articletitled, Ga 2 O 3 ( Gd 2 O 3 ) ∕ Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion

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Nucleation limited switching (NLS) model for HfO₂-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics

Distinguishing the laser-induced spin precession excitation mechanism in Fe/MgO(001) through field orientation dependent measurements

Different temperature scaling of strain-induced magneto-crystalline anisotropy and Gilbert damping in Co₂FeAl film epitaxied on GaAs

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

Interface trap evaluation of Pd/Al₂O₃/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

Three-dimensional mapping of the anisotropic magnetoresistance in Fe₃O₄ single crystal thin films

Study of gate oxide traps in HfO₂/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors

Effect of hydrogen on the chemical bonding and band structure at the Al₂O₃/In_0.53Ga_0.47As interface

Effect of H on interface properties of Al₂O₃/In_0.53Ga_0.47As

Retention mechanism study of the ferroelectric field effect transistor

Inelastic electron tunneling spectroscopy study of ultrathin Al 2 O 3 – TiO 2 dielectric stack on Si

Determination of energy and spatial distributions of traps in ultrathin dielectrics by use of inelastic electron tunneling spectroscopy

Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels

Electrical properties and interfacial structure of epitaxial LaAlO 3 on Si (001)

Demonstration of enhancement-mode GaAs metal-insulator-semiconductor field effect transistor with channel inversion using Si 3 N 4 as gate dielectric

Molecular beam epitaxy growth of InAs and In 0.8 Ga 0.2 As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications

Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al 2 O 3 Dielectric

Ga 2 O 3 ( Gd 2 O 3 ) ∕ Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion

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