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Journal Articles

Ultrahigh vacuum scanning electron microscope system combined with wide-movable scanning tunneling microscope

A. Kaneko, Y. Homma, H. Hibino, T. Ogino

Rev. Sci. Instrum. 76, 083709 (2005)

https://doi.org/10.1063/1.2006388

Published: August 2005

View articletitled, Ultrahigh vacuum scanning electron microscope system combined with wide-movable scanning tunneling microscope

Journal Articles

Extremely small diffusion constant of Cs in multiwalled carbon nanotubes

S. Suzuki, Y. Watanabe, T. Ogino, S. Heun, L. Gregoratti, A. Barinov, B. Kaulich, M. Kiskinova, W. Zhu, C. Bower, O. Zhou

J. Appl. Phys. 92, 7527–7531 (2002)

https://doi.org/10.1063/1.1525401

Published: December 2002

View articletitled, Extremely small diffusion constant of Cs in multiwalled carbon nanotubes

Journal Articles

Optical properties of self-assembled Ge wires grown on Si(113)

M. P. Halsall, H. Omi, T. Ogino

Appl. Phys. Lett. 81, 2448–2450 (2002)

https://doi.org/10.1063/1.1509120

Published: September 2002

View articletitled, Optical properties of self-assembled Ge wires grown on Si(113)

Journal Articles

Strain distribution control on the silicon wafer scale for advanced nanostructure fabrication

H. Omi, D. J. Bottomley, T. Ogino

Appl. Phys. Lett. 80, 1073–1075 (2002)

https://doi.org/10.1063/1.1448855

Published: February 2002

View articletitled, Strain distribution control on the silicon wafer scale for advanced nanostructure fabrication

Journal Articles

Electronic structure of multi-walled carbon nanotubes studied by photoemission spectroscopy

S. Suzuki, C. Bower, Y. Watanabe, S. Heun, T. Kiyokura, K. G. Nath, T. Ogino, W. Zhu, O. Zhou

AIP Conf. Proc. 590, 193–196 (2001)

https://doi.org/10.1063/1.1420087

Published: October 2001

View articletitled, Electronic structure of multi-walled carbon nanotubes studied by photoemission spectroscopy

Journal Articles

Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces

K. Prabhakaran, F. Maeda, Y. Watanabe, T. Ogino

Appl. Phys. Lett. 76, 2244–2246 (2000)

https://doi.org/10.1063/1.126309

Published: April 2000

View articletitled, Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces

Journal Articles

High temperature reaction of nitric oxide with Si surfaces: Formation of Si nanopillars through nitride masking and oxygen etching

K. Prabhakaran, T. Ogino

J. Vac. Sci. Technol. B 17, 1346–1349 (1999)

https://doi.org/10.1116/1.590758

Published: July 1999

View articletitled, High temperature reaction of nitric oxide with Si surfaces: Formation of Si nanopillars through nitride masking and oxygen etching

Journal Articles

Control of atomic step arrangements on a patterned Si(111) substrate by using molecular beam epitaxy

H. Omi, T. Ogino

J. Vac. Sci. Technol. A 17, 1610–1614 (1999)

https://doi.org/10.1116/1.581907

Published: July 1999

View articletitled, Control of atomic step arrangements on a patterned Si(111) substrate by using molecular beam epitaxy

Journal Articles

Fabrication of multiperiod Si/SiO 2 / Ge layered structure through chemical bond manipulation

K. Prabhakaran, T. Matsumoto, T. Ogino, Y. Masumoto

Appl. Phys. Lett. 72, 3169–3171 (1998)

https://doi.org/10.1063/1.121582

Published: June 1998

View articletitled, Fabrication of multiperiod Si/SiO 2 / Ge layered structure through chemical bond manipulation

Journal Articles

Twinned epitaxial layers formed on Si(111)√ 3 ×√ 3 -B

H. Hibino, K. Sumitomo, T. Ogino

J. Vac. Sci. Technol. A 16, 1934–1937 (1998)

https://doi.org/10.1116/1.581199

Published: May 1998

View articletitled, Twinned epitaxial layers formed on Si(111)√ 3 ×√ 3 -B

Journal Articles

Shift of surface Fermi level position toward the conduction band minimum by crystal defects near GaAs(001) surface

Y. Hirota, F. Maeda, Y. Watanabe, T. Ogino

J. Appl. Phys. 82, 1661–1666 (1997)

https://doi.org/10.1063/1.365965

Published: August 1997

View articletitled, Shift of surface Fermi level position toward the conduction band minimum by crystal defects near GaAs(001) surface

Journal Articles

In-rich 4×2 reconstruction in novel planar growth of InAs on GaAs(001)

Q. K. Xue, Y. Hasegawa, T. Ogino, H. Kiyama, T. Sakurai

J. Vac. Sci. Technol. B 15, 1270–1273 (1997)

https://doi.org/10.1116/1.589449

Published: July 1997

View articletitled, In-rich 4×2 reconstruction in novel planar growth of InAs on GaAs(001)

Journal Articles

Fabrication of buried epitaxial CoSi 2 layer through selective diffusion

K. Prabhakaran, K. Sumitomo, T. Ogino

Appl. Phys. Lett. 70, 607–609 (1997)

https://doi.org/10.1063/1.118288

Published: February 1997

View articletitled, Fabrication of buried epitaxial CoSi 2 layer through selective diffusion

Journal Articles

Fabrication of nanostructures on silicon surfaces on wafer scale by controlling self‐organization processes

T. Ogino, H. Hibino, K. Prabhakaran

J. Vac. Sci. Technol. B 14, 4134–4139 (1996)

https://doi.org/10.1116/1.588606

Published: November 1996

View articletitled, Fabrication of nanostructures on silicon surfaces on wafer scale by controlling self‐organization processes

Journal Articles

Diffusion mediated chemical reaction in Co/Ge/Si(100) forming Ge/CoSi₂/Si(100)

K. Prabhakaran, K. Sumitomo, T. Ogino

Appl. Phys. Lett. 68, 1241–1243 (1996)

https://doi.org/10.1063/1.115939

Published: February 1996

View articletitled, Diffusion mediated chemical reaction in Co/Ge/Si(100) forming Ge/CoSi2/Si(100)

Journal Articles

In situ observation of silicon hydrides on Si(100) surfaces during synchrotron‐radiation‐stimulated Si₂H₆ gas source molecular beam epitaxy

A. Yoshigoe, K. Mase, Y. Tsusaka, T. Urisu, Y. Kobayashi, T. Ogino

Appl. Phys. Lett. 67, 2364–2366 (1995)

https://doi.org/10.1063/1.114346

Published: October 1995

View articletitled, In situ observation of silicon hydrides on Si(100) surfaces during synchrotron‐radiation‐stimulated Si2H6 gas source molecular beam epitaxy

Journal Articles

Reducing domain boundaries of surface reconstruction during molecular beam epitaxy on Si(111)

H. Hibino, T. Ogino

Appl. Phys. Lett. 67, 915–917 (1995)

https://doi.org/10.1063/1.114693

Published: August 1995

View articletitled, Reducing domain boundaries of surface reconstruction during molecular beam epitaxy on Si(111)

Journal Articles

Thermal effects on GaAs(001) surface prepared by deoxygenated and de‐ionized water treatment

Y. Hirota, T. Ogino, Y. Watanabe, M. Oshima

J. Vac. Sci. Technol. A 13, 1676–1680 (1995)

https://doi.org/10.1116/1.579750

Published: May 1995

View articletitled, Thermal effects on GaAs(001) surface prepared by deoxygenated and de‐ionized water treatment

Journal Articles

Ge island formation on Si(111) in solid phase epitaxy studied by medium‐energy ion scattering

K. Sumitomo, T. Nishioka, T. Ogino

J. Vac. Sci. Technol. B 13, 387–389 (1995)

https://doi.org/10.1116/1.587951

Published: March 1995

View articletitled, Ge island formation on Si(111) in solid phase epitaxy studied by medium‐energy ion scattering

Journal Articles

Interface structure of Ge/Si(111) during solid‐phase epitaxy studied by medium‐energy ion scattering

K. Sumitomo, T. Nishioka, N. Shimizu, Y. Shinoda, T. Ogino

J. Vac. Sci. Technol. A 13, 289–294 (1995)

https://doi.org/10.1116/1.579412

Published: March 1995

View articletitled, Interface structure of Ge/Si(111) during solid‐phase epitaxy studied by medium‐energy ion scattering

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Ultrahigh vacuum scanning electron microscope system combined with wide-movable scanning tunneling microscope

Extremely small diffusion constant of Cs in multiwalled carbon nanotubes

Optical properties of self-assembled Ge wires grown on Si(113)

Strain distribution control on the silicon wafer scale for advanced nanostructure fabrication

Electronic structure of multi-walled carbon nanotubes studied by photoemission spectroscopy

Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces

High temperature reaction of nitric oxide with Si surfaces: Formation of Si nanopillars through nitride masking and oxygen etching

Control of atomic step arrangements on a patterned Si(111) substrate by using molecular beam epitaxy

Fabrication of multiperiod Si/SiO 2 / Ge layered structure through chemical bond manipulation

Twinned epitaxial layers formed on Si(111)√ 3 ×√ 3 -B

Shift of surface Fermi level position toward the conduction band minimum by crystal defects near GaAs(001) surface

In-rich 4×2 reconstruction in novel planar growth of InAs on GaAs(001)

Fabrication of buried epitaxial CoSi 2 layer through selective diffusion

Fabrication of nanostructures on silicon surfaces on wafer scale by controlling self‐organization processes

Diffusion mediated chemical reaction in Co/Ge/Si(100) forming Ge/CoSi₂/Si(100)

In situ observation of silicon hydrides on Si(100) surfaces during synchrotron‐radiation‐stimulated Si₂H₆ gas source molecular beam epitaxy

Reducing domain boundaries of surface reconstruction during molecular beam epitaxy on Si(111)

Thermal effects on GaAs(001) surface prepared by deoxygenated and de‐ionized water treatment

Ge island formation on Si(111) in solid phase epitaxy studied by medium‐energy ion scattering

Interface structure of Ge/Si(111) during solid‐phase epitaxy studied by medium‐energy ion scattering

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