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Journal Articles

High mobilities in AlxGa1−xAs‐GaAs heterojuntions

L. C. Witkowski, T. J. Drummond, C. M. Stanchak, H. Morkoç
Journal: Applied Physics Letters
Appl. Phys. Lett. 37, 1033–1035 (1980)
https://doi.org/10.1063/1.91754
Published: July 2008
View article titled, High mobilities in Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>As‐GaAs heterojuntions
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Journal Articles

Ultrahigh Si + implant activation efficiency in GaN using a high-temperature rapid thermal process system

X. A. Cao, C. R. Abernathy, R. K. Singh, S. J. Pearton, M. Fu, V. Sarvepalli, J. A. Sekhar, J. C. Zolper, D. J. Rieger, J. Han, T. J. Drummond, R. J. Shul, R. G. Wilson
Journal: Applied Physics Letters
Appl. Phys. Lett. 73, 229–231 (1998)
https://doi.org/10.1063/1.121764
Published: July 1998
View article titled, Ultrahigh Si + implant activation efficiency in GaN using a high-temperature rapid thermal process system
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Journal Articles

Application of in situ reflectance monitoring to molecular beam epitaxy of vertical-cavity structures

J. F. Klem, W. G. Breiland, I. J. Fritz, T. J. Drummond, S. R. Lee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 16, 1498–1501 (1998)
https://doi.org/10.1116/1.589974
Published: May 1998
View article titled, Application of <em>in situ</em> reflectance monitoring to molecular beam epitaxy of vertical-cavity structures
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Journal Articles

Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

K. Lawniczak-Jablonska, T. Suski, Z. Liliental-Weber, E. M. Gullikson, J. H. Underwood, R. C. C. Perera, T. J. Drummond
Journal: Applied Physics Letters
Appl. Phys. Lett. 70, 2711–2713 (1997)
https://doi.org/10.1063/1.119000
Published: May 1997
View article titled, Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption
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Journal Articles

Selective oxidation of buried AlGaAs versus AlAs layers

Kent D. Choquette, K. M. Geib, H. C. Chui, B. E. Hammons, H. Q. Hou, T. J. Drummond, Robert Hull
Journal: Applied Physics Letters
Appl. Phys. Lett. 69, 1385–1387 (1996)
https://doi.org/10.1063/1.117589
Published: September 1996
View article titled, Selective oxidation of buried AlGaAs versus AlAs layers
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Journal Articles

n‐type ion implantation doping of AlxGa1−xAs (0⩽x⩽0.7)

J. C. Zolper, J. F. Klem, A. G. Baca, M. E. Sherwin, M. J. Hafich, T. J. Drummond
Journal: Journal of Applied Physics
J. Appl. Phys. 80, 2132–2137 (1996)
https://doi.org/10.1063/1.363556
Published: August 1996
View article titled, <em>n</em>‐type ion implantation doping of Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>As (0⩽<em>x</em>⩽0.7)
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Journal Articles

Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates

O. Blum, I. J. Fritz, L. R. Dawson, A. J. Howard, T. J. Headley, J. F. Klem, T. J. Drummond
Journal: Applied Physics Letters
Appl. Phys. Lett. 66, 329–331 (1995)
https://doi.org/10.1063/1.114202
Published: January 1995
View article titled, Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates
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Journal Articles

Built‐in biaxial strain dependence of Γ‐X transport in GaAs/InxAl1−xAs/GaAs pseudomorphic heterojunction barriers (x=0, 0.03, and 0.06)

K. Yang, J. R. East, G. I. Haddad, T. J. Drummond, T. M. Brennan, B. E. Hammons
Journal: Journal of Applied Physics
J. Appl. Phys. 76, 7907–7914 (1994)
https://doi.org/10.1063/1.357901
Published: December 1994
View article titled, Built‐in biaxial strain dependence of Γ‐<em>X</em> transport in GaAs/In<sub><em>x</em></sub>Al<sub>1−<em>x</em></sub>As/GaAs pseudomorphic heterojunction barriers (<em>x</em>=0, 0.03, and 0.06)
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Journal Articles

Molecular beam epitaxy grown III–V strain relaxed buffer layers and superlattices characterized by atomic force microscopy

A. J. Howard, I. J. Fritz, T. J. Drummond, J. A. Olsen, B. E. Hammons, S. R. Kurtz, T. M. Brennan
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 12, 1003–1008 (1994)
https://doi.org/10.1116/1.579275
Published: July 1994
View article titled, Molecular beam epitaxy grown III–V strain relaxed buffer layers and superlattices characterized by atomic force microscopy
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Journal Articles

Molecular beam epitaxy grown AlAsSb/GaAsSb distributed Bragg reflector on InP substrate operating near 1.55 μm

O. Blum, I. J. Fritz, L. R. Dawson, A. J. Howard, T. J. Headley, J. A. Olsen, J. F. Klem, T. J. Drummond
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 12, 1122–1124 (1994)
https://doi.org/10.1116/1.587062
Published: March 1994
View article titled, Molecular beam epitaxy grown AlAsSb/GaAsSb distributed Bragg reflector on InP substrate operating near 1.55 μm
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Journal Articles

Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on β‐SiC

M. E. Sherwin, T. J. Drummond
Journal: Journal of Applied Physics
J. Appl. Phys. 69, 8423–8425 (1991)
https://doi.org/10.1063/1.347412
Published: June 1991
View article titled, Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on β‐SiC
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Journal Articles

The role of surface tension in the growth of strained quantum wire arraysa)

M. E. Sherwin, T. J. Drummond, D. J. Srolovitz
Journal: Journal of Applied Physics
J. Appl. Phys. 69, 717–721 (1991)
https://doi.org/10.1063/1.347355
Published: January 1991
View article titled, The role of surface tension in the growth of strained quantum wire arrays<sup>a)</sup>
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Journal Articles

A parametric investigation of AlGaAs/GaAs modulation‐doped quantum wires

M. E. Sherwin, T. J. Drummond
Journal: Journal of Applied Physics
J. Appl. Phys. 66, 5444–5455 (1989)
https://doi.org/10.1063/1.343694
Published: December 1989
View article titled, A parametric investigation of AlGaAs/GaAs modulation‐doped quantum wires
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Journal Articles

Electric field response of a semiconductor superlattice optical mirror from electroreflectance spectra

I. J. Fritz, P. L. Gourley, T. J. Drummond
Journal: Applied Physics Letters
Appl. Phys. Lett. 55, 1324–1326 (1989)
https://doi.org/10.1063/1.101644
Published: September 1989
View article titled, Electric field response of a semiconductor superlattice optical mirror from electroreflectance spectra
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Journal Articles

Determination of energy‐band dispersion curves in strained‐layer structures

E. D. Jones, S. K. Lyo, I. J. Fritz, J. F. Klem, J. E. Schirber, C. P. Tigges, T. J. Drummond
Journal: Applied Physics Letters
Appl. Phys. Lett. 54, 2227–2229 (1989)
https://doi.org/10.1063/1.101367
Published: May 1989
View article titled, Determination of energy‐band dispersion curves in strained‐layer structures
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Journal Articles

Threshold characteristics of epitaxial Al(Ga,As) surface‐emitting lasers with integrated quarter‐wave high reflectors

P. L. Gourley, T. J. Drummond, T. E. Zipperian, J. L. Reno, T. A. Plut
Journal: Journal of Applied Physics
J. Appl. Phys. 64, 6578–6580 (1988)
https://doi.org/10.1063/1.342033
Published: December 1988
View article titled, Threshold characteristics of epitaxial Al(Ga,As) surface‐emitting lasers with integrated quarter‐wave high reflectors
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Journal Articles

GaAs/(In,Ga)As, p‐channel, multiple strained quantum well field‐effect transistors with high transconductance and high peak saturated drain current

T. E. Zipperian, L. R. Dawson, T. J. Drummond, J. E. Schirber, I. J. Fritz
Journal: Applied Physics Letters
Appl. Phys. Lett. 52, 975–977 (1988)
https://doi.org/10.1063/1.99246
Published: March 1988
View article titled, GaAs/(In,Ga)As, <em>p</em>‐channel, multiple strained quantum well field‐effect transistors with high transconductance and high peak saturated drain current
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Journal Articles

Resonant, dispersive optical tuning in an epitaxial (Al,Ga)As Fabry–Perot étalon

P. L. Gourley, T. J. Drummond
Journal: Applied Physics Letters
Appl. Phys. Lett. 52, 7–9 (1988)
https://doi.org/10.1063/1.99331
Published: January 1988
View article titled, Resonant, dispersive optical tuning in an epitaxial (Al,Ga)As Fabry–Perot étalon
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Journal Articles

Optical bleaching in an epitaxial (Al,Ga)As Fabry–Perot resonator

P. L. Gourley, T. J. Drummond
Journal: Applied Physics Letters
Appl. Phys. Lett. 51, 1395–1397 (1987)
https://doi.org/10.1063/1.98687
Published: November 1987
View article titled, Optical bleaching in an epitaxial (Al,Ga)As Fabry–Perot resonator
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Journal Articles

Magnetotransport and luminescence measurements in an n‐type selectively doped InGaAs/GaAs strained quantum well structure

I. J. Fritz, J. E. Schirber, E. D. Jones, T. J. Drummond, L. R. Dawson
Journal: Applied Physics Letters
Appl. Phys. Lett. 50, 1370–1372 (1987)
https://doi.org/10.1063/1.97859
Published: May 1987
View article titled, Magnetotransport and luminescence measurements in an <em>n</em>‐type selectively doped InGaAs/GaAs strained quantum well structure
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