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Journal Articles

Realization of high-Q/V photonic crystal cavities defined by an effective Aubry-André-Harper bichromatic potential

A. Simbula, M. Schatzl, L. Zagaglia, F. Alpeggiani, L. C. Andreani, F. Schäffler, T. Fromherz, M. Galli, D. Gerace

APL Photonics 2, 056102 (2017)

https://doi.org/10.1063/1.4979708

Published: April 2017

View article titled, Realization of high-<em>Q</em>/<em>V</em> photonic crystal cavities defined by an effective Aubry-André-Harper bichromatic potential

Includes: Supplementary data

Journal Articles

The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

M. Brehm, M. Grydlik, H. Groiss, F. Hackl, F. Schäffler, T. Fromherz, G. Bauer

J. Appl. Phys. 109, 123505 (2011)

https://doi.org/10.1063/1.3594693

Published: June 2011

View article titled, The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

Journal Articles

Tensile strained SiGe quantum well infrared photodetectors based on a light-hole ground state

P. Rauter, G. Mussler, D. Grützmacher, T. Fromherz

Appl. Phys. Lett. 98, 211106 (2011)

https://doi.org/10.1063/1.3593134

Published: May 2011

View article titled, Tensile strained SiGe quantum well infrared photodetectors based on a light-hole ground state

Journal Articles

UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays

E. Lausecker, M. Brehm, M. Grydlik, F. Hackl, I. Bergmair, M. Mühlberger, T. Fromherz, F. Schäffler, G. Bauer

Appl. Phys. Lett. 98, 143101 (2011)

https://doi.org/10.1063/1.3575554

Published: April 2011

View article titled, UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays

Journal Articles

Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates

R. Gatti, F. Boioli, M. Grydlik, M. Brehm, H. Groiss, M. Glaser, F. Montalenti, T. Fromherz, F. Schäffler, Leo Miglio

Appl. Phys. Lett. 98, 121908 (2011)

https://doi.org/10.1063/1.3569145

Published: March 2011

View article titled, Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates

Journal Articles

Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication

E. Lausecker, Y. Huang, T. Fromherz, J. C. Sturm, S. Wagner

Appl. Phys. Lett. 96, 263501 (2010)

https://doi.org/10.1063/1.3457446

Published: June 2010

View article titled, Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication

Journal Articles

Type I/type II band alignment transition in strained Pb Se ∕ Pb Eu Se Te multiquantum wells

M. Simma, T. Fromherz, G. Bauer, G. Springholz

Appl. Phys. Lett. 95, 212103 (2009)

https://doi.org/10.1063/1.3263722

Published: November 2009

View article titled, Type I/type II band alignment transition in strained Pb Se ∕ Pb Eu Se Te multiquantum wells

Journal Articles

SiGe quantum well infrared photodetectors on pseudosubstrate

P. Rauter, T. Fromherz, C. Falub, D. Grützmacher, G. Bauer

Appl. Phys. Lett. 94, 081115 (2009)

https://doi.org/10.1063/1.3089817

Published: February 2009

View article titled, SiGe quantum well infrared photodetectors on pseudosubstrate

Journal Articles

Terahertz Si:B blocked-impurity-band detectors defined by nonepitaxial methods

P. Rauter, T. Fromherz, S. Winnerl, M. Zier, A. Kolitsch, M. Helm, G. Bauer

Appl. Phys. Lett. 93, 261104 (2008)

https://doi.org/10.1063/1.3059559

Published: December 2008

View article titled, Terahertz Si:B blocked-impurity-band detectors defined by nonepitaxial methods

Journal Articles

Quantitative determination of Ge profiles across SiGe wetting layers on Si (001)

M. Brehm, M. Grydlik, H. Lichtenberger, T. Fromherz, N. Hrauda, W. Jantsch, F. Schäffler, G. Bauer

Appl. Phys. Lett. 93, 121901 (2008)

https://doi.org/10.1063/1.2988261

Published: September 2008

View article titled, Quantitative determination of Ge profiles across SiGe wetting layers on Si (001)

Journal Articles

Resonator fabrication for switchable two‐color MIR detectors based on p‐type SiGe quantum cascade injectors

M. Grydlik, P. Rauter, T. Fromherz, C. Falub, D. Gruetzmacher, G. Isella, G. Bauer

AIP Conf. Proc. 893, 1411–1412 (2007)

https://doi.org/10.1063/1.2730433

Published: April 2007

View article titled, Resonator fabrication for switchable two‐color MIR detectors based on p‐type SiGe quantum cascade injectors

Journal Articles

Spin relaxation in SiGe islands

H. Malissa, W. Jantsch, G. Chen, H. Lichtenberger, T. Fromherz, F. Schäffler, G. Bauer, A. Tyryshkin, S. Lyon, Z. Wilamowski

AIP Conf. Proc. 893, 1317–1318 (2007)

https://doi.org/10.1063/1.2730387

Published: April 2007

View article titled, Spin relaxation in SiGe islands

Journal Articles

Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments

P. Rauter, T. Fromherz, G. Bauer, N. Q. Vinh, B. N. Murdin, J. P. Phillips, C. R. Pidgeon, L. Diehl, G. Dehlinger, D. Grützmacher

Appl. Phys. Lett. 89, 211111 (2006)

https://doi.org/10.1063/1.2397004

Published: November 2006

View article titled, Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments

Journal Articles

Lateral photocurrent spectroscopy on self-assembled PbSe quantum dots

M. Simma, T. Fromherz, A. Raab, G. Springholz, G. Bauer

Appl. Phys. Lett. 88, 201105 (2006)

https://doi.org/10.1063/1.2202127

Published: May 2006

View article titled, Lateral photocurrent spectroscopy on self-assembled PbSe quantum dots

Journal Articles

Room temperature operation of epitaxial lead-telluride detectors monolithically integrated on midinfrared filters

M. Böberl, T. Fromherz, J. Roither, G. Pillwein, G. Springholz, W. Heiss

Appl. Phys. Lett. 88, 041105 (2006)

https://doi.org/10.1063/1.2167396

Published: January 2006

View article titled, Room temperature operation of epitaxial lead-telluride detectors monolithically integrated on midinfrared filters

Journal Articles

Ge ∕ Si islands in a three-dimensional island crystal studied by x-ray diffraction

J. Novák, V. Holý, J. Stangl, T. Fromherz, Zhenyang Zhong, Gang Chen, G. Bauer, B. Struth

J. Appl. Phys. 98, 073517 (2005)

https://doi.org/10.1063/1.2073974

Published: October 2005

View article titled, Ge ∕ Si islands in a three-dimensional island crystal studied by x-ray diffraction

Journal Articles

Highly nonlinear transport phenomena in fullerene based diodes

G. J. Matt, T. Fromherz, H. Neugebauer, N. S. Sariciftci

AIP Conf. Proc. 786, 530–533 (2005)

https://doi.org/10.1063/1.2103924

Published: September 2005

View article titled, Highly nonlinear transport phenomena in fullerene based diodes

Journal Articles

Intersubband absorption of strain-compensated Si 1 − x Ge x valence-band quantum wells with 0.7 ⩽ x ⩽ 0.85

T. Fromherz, M. Meduňa, G. Bauer, A. Borak, C. V. Falub, S. Tsujino, H. Sigg, D. Grützmacher

J. Appl. Phys. 98, 044501 (2005)

https://doi.org/10.1063/1.1997292

Published: August 2005

View article titled, Intersubband absorption of strain-compensated Si 1 − x Ge x valence-band quantum wells with 0.7 ⩽ x ⩽ 0.85

Journal Articles

Hall mobility of narrow Si 0.2 Ge 0.8 – Si quantum wells on Si 0.5 Ge 0.5 relaxed buffer substrates

S. Tsujino, C. V. Falub, E. Müller, M. Scheinert, L. Diehl, U. Gennser, T. Fromherz, A. Borak, H. Sigg, D. Grützmacher, Y. Campidelli, O. Kermarrec, D. Bensahel

Appl. Phys. Lett. 84, 2829–2831 (2004)

https://doi.org/10.1063/1.1695102

Published: April 2004

View article titled, Hall mobility of narrow Si 0.2 Ge 0.8 – Si quantum wells on Si 0.5 Ge 0.5 relaxed buffer substrates

Journal Articles

Anomalous charge transport behavior of Fullerene based diodes

G. J. Matt, N. S. Sariciftci, T. Fromherz

Appl. Phys. Lett. 84, 1570–1572 (2004)

https://doi.org/10.1063/1.1651642

Published: March 2004

View article titled, Anomalous charge transport behavior of Fullerene based diodes

NARROW

Topics

Realization of high-Q/V photonic crystal cavities defined by an effective Aubry-André-Harper bichromatic potential

The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

Tensile strained SiGe quantum well infrared photodetectors based on a light-hole ground state

UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays

Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates

Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication

Type I/type II band alignment transition in strained Pb Se ∕ Pb Eu Se Te multiquantum wells

SiGe quantum well infrared photodetectors on pseudosubstrate

Terahertz Si:B blocked-impurity-band detectors defined by nonepitaxial methods

Quantitative determination of Ge profiles across SiGe wetting layers on Si (001)

Resonator fabrication for switchable two‐color MIR detectors based on p‐type SiGe quantum cascade injectors

Spin relaxation in SiGe islands

Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments

Lateral photocurrent spectroscopy on self-assembled PbSe quantum dots

Room temperature operation of epitaxial lead-telluride detectors monolithically integrated on midinfrared filters

Ge ∕ Si islands in a three-dimensional island crystal studied by x-ray diffraction

Highly nonlinear transport phenomena in fullerene based diodes

Intersubband absorption of strain-compensated Si 1 − x Ge x valence-band quantum wells with 0.7 ⩽ x ⩽ 0.85

Hall mobility of narrow Si 0.2 Ge 0.8 – Si quantum wells on Si 0.5 Ge 0.5 relaxed buffer substrates

Anomalous charge transport behavior of Fullerene based diodes

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