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Journal Articles

Room-temperature nonradiative recombination lifetimes in c-plane Al1−xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21)

L. Y. Li, K. Shima, M. Yamanaka, T. Egawa, T. Takeuchi, M. Miyoshi, S. Ishibashi, A. Uedono, S. F. Chichibu
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 163102 (2022)
https://doi.org/10.1063/5.0106540
Published: October 2022
View article titled, Room-temperature nonradiative recombination lifetimes in <em>c</em>-plane Al<sub>1−<em>x</em></sub>In<em><sub>x</sub></em>N epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ <em>x</em> ≤ 0.21)
Open the PDF for Room-temperature nonradiative recombination lifetimes in <em>c</em>-plane Al<sub>1−<em>x</em></sub>In<em><sub>x</sub></em>N epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ <em>x</em> ≤ 0.21) in another window
Journal Articles

Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy

L. Y. Li, K. Shima, M. Yamanaka, K. Kojima, T. Egawa, A. Uedono, S. Ishibashi, T. Takeuchi, M. Miyoshi, S. F. Chichibu
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 091105 (2021)
https://doi.org/10.1063/5.0066263
Published: August 2021
View article titled, Reduced nonradiative recombination rates in <em>c</em>-plane Al<sub>0.83</sub>In<sub>0.17</sub>N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy
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Journal Articles

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

J. J. Freedsman, A. Watanabe, Y. Urayama, T. Egawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 103506 (2015)
https://doi.org/10.1063/1.4930876
Published: September 2015
View article titled, Enhanced two dimensional electron gas transport characteristics in Al<sub>2</sub>O<sub>3</sub>/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate
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Journal Articles

Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition

K. Fujita, K. Banno, H. R. Aryal, T. Egawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 163109 (2012)
https://doi.org/10.1063/1.4761474
Published: October 2012
View article titled, Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition
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Journal Articles

Threading dislocation-governed degradation in crystal quality of heteroepitaxial materials: The case of InAlN nearly lattice-matched to GaN

Z. T. Chen, K. Fujita, J. Ichikawa, T. Egawa
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 053535 (2012)
https://doi.org/10.1063/1.3693039
Published: March 2012
View article titled, Threading dislocation-governed degradation in crystal quality of heteroepitaxial materials: The case of InAlN nearly lattice-matched to GaN
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Journal Articles

Compositional instability in InAlN/GaN lattice-matched epitaxy

Q. Y. Wei, T. Li, Y. Huang, J. Y. Huang, Z. T. Chen, T. Egawa, F. A. Ponce
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 092101 (2012)
https://doi.org/10.1063/1.3690890
Published: February 2012
View article titled, Compositional instability in InAlN/GaN lattice-matched epitaxy
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Journal Articles

Effect of metal-precursor gas ratios on AlInN/GaN structures for high efficiency ultraviolet photodiodes

Y. Sakai, P. C. Khai, T. Egawa
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 103523 (2011)
https://doi.org/10.1063/1.3662488
Published: November 2011
View article titled, Effect of metal-precursor gas ratios on AlInN/GaN structures for high efficiency ultraviolet photodiodes
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Journal Articles

Pd/InAlN Schottky diode with low reverse current by sulfide treatment

Z. T. Chen, K. Fujita, T. Egawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 183504 (2011)
https://doi.org/10.1063/1.3659477
Published: November 2011
View article titled, Pd/InAlN Schottky diode with low reverse current by sulfide treatment
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Journal Articles

Effect of n-GaN thickness on internal quantum efficiency in InxGa1-xN multiple-quantum-well light emitting diodes grown on Si (111) substrate

L. Lu, Y. H. Zhu, Z. T. Chen, T. Egawa
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 113537 (2011)
https://doi.org/10.1063/1.3596592
Published: June 2011
View article titled, Effect of n-GaN thickness on internal quantum efficiency in In<sub>x</sub>Ga<sub>1-x</sub>N multiple-quantum-well light emitting diodes grown on Si (111) substrate
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Journal Articles

Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers

S. Tan, S. L. Selvaraj, T. Egawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 053502 (2010)
https://doi.org/10.1063/1.3475394
Published: August 2010
View article titled, Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers
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Journal Articles

Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition

Z. T. Chen, Y. Sakai, T. Egawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 191911 (2010)
https://doi.org/10.1063/1.3430737
Published: May 2010
View article titled, Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition
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Journal Articles

Low-temperature electroluminescence quenching of AlGaN deep ultraviolet light-emitting diodes

J. C. Zhang, Y. Sakai, T. Egawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 013503 (2010)
https://doi.org/10.1063/1.3284521
Published: January 2010
View article titled, Low-temperature electroluminescence quenching of AlGaN deep ultraviolet light-emitting diodes
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Journal Articles

Demonstration on GaN-based light-emitting diodes grown on 3C-SiC/Si(111)

Y. H. Zhu, J. C. Zhang, Z. T. Chen, T. Egawa
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 124506 (2009)
https://doi.org/10.1063/1.3273311
Published: December 2009
View article titled, Demonstration on GaN-based light-emitting diodes grown on 3C-SiC/Si(111)
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Journal Articles

Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes

Z. T. Chen, Y. Sakai, J. C. Zhang, T. Egawa, J. J. Wu, H. Miyake, K. Hiramatsu
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 083504 (2009)
https://doi.org/10.1063/1.3213562
Published: August 2009
View article titled, Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes
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Journal Articles

Improved performance of InAlN-based Schottky solar-blind photodiodes

Z. T. Chen, S. X. Tan, Y. Sakai, T. Egawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 213504 (2009)
https://doi.org/10.1063/1.3142870
Published: May 2009
View article titled, Improved performance of InAlN-based Schottky solar-blind photodiodes
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Journal Articles

Suppression of the subband parasitic peak by 1 nm   i - Al N interlayer in AlGaN deep ultraviolet light-emitting diodes

J. C. Zhang, Y. H. Zhu, T. Egawa, S. Sumiya, M. Miyoshi, M. Tanaka
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 131117 (2008)
https://doi.org/10.1063/1.2996580
Published: October 2008
View article titled, Suppression of the subband parasitic peak by 1 nm   i - Al N interlayer in AlGaN deep ultraviolet light-emitting diodes
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Journal Articles

AlInN-based ultraviolet photodiode grown by metal organic chemical vapor deposition

S. Senda, H. Jiang, T. Egawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 203507 (2008)
https://doi.org/10.1063/1.2936289
Published: May 2008
View article titled, AlInN-based ultraviolet photodiode grown by metal organic chemical vapor deposition
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Journal Articles

Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes

J. C. Zhang, Y. H. Zhu, T. Egawa, S. Sumiya, M. Miyoshi, M. Tanaka
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 191917 (2008)
https://doi.org/10.1063/1.2931698
Published: May 2008
View article titled, Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes
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Journal Articles

Influence of crystalline quality of low-temperature GaN cap layer on current collapse in Al Ga N ∕ Ga N heterostructure field-effect transistors

E. Waki, T. Deguchi, A. Nakagawa, T. Egawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 103507 (2008)
https://doi.org/10.1063/1.2896311
Published: March 2008
View article titled, Influence of crystalline quality of low-temperature GaN cap layer on current collapse in Al Ga N ∕ Ga N heterostructure field-effect transistors
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Journal Articles

Sheet carrier density enhancement by Si 3 N 4 passivation on nonpolar a -plane ( 11 2 ¯ ) sapphire grown Al Ga N ∕ Ga N heterostructures

S. Arulkumaran, S. Lawrence Selvaraj, T. Egawa, G. I. Ng
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 092116 (2008)
https://doi.org/10.1063/1.2857479
Published: March 2008
View article titled, Sheet carrier density enhancement by Si 3 N 4 passivation on nonpolar a -plane ( 11 2 ¯ ) sapphire grown Al Ga N ∕ Ga N heterostructures
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