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T. D. Moustakas
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Journal Articles

Compositional and strain analysis of In(Ga)N/GaN short period superlattices

Editor’s Pick
G. P. Dimitrakopulos, I. G. Vasileiadis, C. Bazioti, J. Smalc-Koziorowska, S. Kret, E. Dimakis, N. Florini, Th. Kehagias, T. Suski, Th. Karakostas, T. D. Moustakas, Ph. Komninou
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 024304 (2018)
https://doi.org/10.1063/1.5009060
Published: January 2018
View article titled, Compositional and strain analysis of In(Ga)N/GaN short period superlattices
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Journal Articles

Analysis of InGaN nanodots grown by droplet heteroepitaxy using grazing incidence small-angle X-ray scattering and electron microscopy

Editor’s Pick
J. M. Woodward, A. Yu. Nikiforov, K. F. Ludwig, Jr., T. D. Moustakas
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 065305 (2017)
https://doi.org/10.1063/1.4986272
Published: August 2017
View article titled, Analysis of InGaN nanodots grown by droplet heteroepitaxy using grazing incidence small-angle X-ray scattering and electron microscopy
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Journal Articles

Deep ultraviolet distributed Bragg reflectors based on graded composition AlGaN alloys

Gordie Brummer, Denis Nothern, A. Yu. Nikiforov, T. D. Moustakas
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 221107 (2015)
https://doi.org/10.1063/1.4922215
Published: June 2015
View article titled, Deep ultraviolet distributed Bragg reflectors based on graded composition AlGaN alloys
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Journal Articles

Two-dimensional electron gas in monolayer InN quantum wells

W. Pan, E. Dimakis, G. T. Wang, T. D. Moustakas, D. C. Tsui
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 213503 (2014)
https://doi.org/10.1063/1.4902916
Published: November 2014
View article titled, Two-dimensional electron gas in monolayer InN quantum wells
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Journal Articles

Photoluminescence and pressure effects in short period InN/nGaN superlattices

G. Staszczak, I. Gorczyca, T. Suski, X. Q. Wang, N. E. Christensen, A. Svane, E. Dimakis, T. D. Moustakas
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 123101 (2013)
https://doi.org/10.1063/1.4796101
Published: March 2013
View article titled, Photoluminescence and pressure effects in short period InN/<em>n</em>GaN superlattices
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Journal Articles

Temperature dependent photon echoes of a GaN thin film

J. R. Schneck, E. Dimakis, J. Woodward, S. Erramilli, T. D. Moustakas, L. D. Ziegler
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 142102 (2012)
https://doi.org/10.1063/1.4754091
Published: October 2012
View article titled, Temperature dependent photon echoes of a GaN thin film
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Includes: Supplementary data
Journal Articles

Composition dependent bilayer atomic ordering in AlxGa1−xN films examined by polarization-dependent extended x-ray absorption fine structure

J. C. Woicik, K. F. Ludwig, Jr., T. D. Moustakas
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 162105 (2012)
https://doi.org/10.1063/1.4704678
Published: April 2012
View article titled, Composition dependent bilayer atomic ordering in Al<sub>x</sub>Ga<sub>1−x</sub>N films examined by polarization-dependent extended x-ray absorption fine structure
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Journal Articles

Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

Emanuele Francesco Pecora, Wei Zhang, A. Yu. Nikiforov, Lin Zhou, David J. Smith, Jian Yin, Roberto Paiella, Luca Dal Negro, T. D. Moustakas
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 061111 (2012)
https://doi.org/10.1063/1.3681944
Published: February 2012
View article titled, Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations
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Journal Articles

Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency

Wei Zhang, A. Yu. Nikiforov, C. Thomidis, J. Woodward, H. Sun, Chen-Kai Kao, D. Bhattarai, A. Moldawer, L. Zhou, D. J. Smith, T. D. Moustakas
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 02B119 (2012)
https://doi.org/10.1116/1.3678208
Published: February 2012
View article titled, Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency
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Journal Articles

Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates

R. Chandrasekaran, T. D. Moustakas, A. S. Ozcan, K. F. Ludwig, L. Zhou, David J. Smith
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 043501 (2010)
https://doi.org/10.1063/1.3475521
Published: August 2010
View article titled, Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates
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Journal Articles

Chemical structure of vanadium-based contact formation on n-AlN

S. Pookpanratana, R. France, M. Blum, A. Bell, M. Bär, L. Weinhardt, Y. Zhang, T. Hofmann, O. Fuchs, W. Yang, J. D. Denlinger, S. Mulcahy, T. D. Moustakas, C. Heske
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 024906 (2010)
https://doi.org/10.1063/1.3456060
Published: July 2010
View article titled, Chemical structure of vanadium-based contact formation on n-AlN
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Journal Articles

One-dimensional carrier localization and effective quantum wire behavior in two-dimensional quantum wedges

S. Riyopoulos, T. D. Moustakas
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 044303 (2009)
https://doi.org/10.1063/1.3187906
Published: August 2009
View article titled, One-dimensional carrier localization and effective quantum wire behavior in two-dimensional quantum wedges
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Journal Articles

Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

A. Bhattacharyya, T. D. Moustakas, Lin Zhou, David. J. Smith, W. Hug
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 181907 (2009)
https://doi.org/10.1063/1.3130755
Published: May 2009
View article titled, Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency
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Journal Articles

Intermixing and chemical structure at the interface between n - Ga N and V-based contacts

S. Pookpanratana, R. France, M. Bär, L. Weinhardt, O. Fuchs, M. Blum, W. Yang, J. D. Denlinger, T. D. Moustakas, C. Heske
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 172106 (2008)
https://doi.org/10.1063/1.2992199
Published: October 2008
View article titled, Intermixing and chemical structure at the interface between n - Ga N and V-based contacts
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Journal Articles

The role of dislocations as nonradiative recombination centers in InGaN quantum wells

Josh Abell, T. D. Moustakas
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 091901 (2008)
https://doi.org/10.1063/1.2889444
Published: March 2008
View article titled, The role of dislocations as nonradiative recombination centers in InGaN quantum wells
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Journal Articles

GaN quantum dot superlattices grown by molecular beam epitaxy at high temperature

Tao Xu, Lin Zhou, Yiyi Wang, Ahmet S. Özcan, K. F. Ludwig, David J. Smith, T. D. Moustakas
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 073517 (2007)
https://doi.org/10.1063/1.2787155
Published: October 2007
View article titled, GaN quantum dot superlattices grown by molecular beam epitaxy at high temperature
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Journal Articles

Enhanced transmission through quasirandom nanostructured dielectric interfaces via supercritical angle scattering

S. Riyopoulos, T. D. Moustakas, J. S. Cabalu
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 043111 (2007)
https://doi.org/10.1063/1.2753578
Published: August 2007
View article titled, Enhanced transmission through quasirandom nanostructured dielectric interfaces via supercritical angle scattering
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Journal Articles

Plasma nanosheath formation with carrier accumulation and enhanced localized spontaneous emission at “quantum wedges” in textured GaN

S. Riyopoulos, T. D. Moustakas, J. S. Cabalu
Journal: Physics of Plasmas
Phys. Plasmas 14, 053501 (2007)
https://doi.org/10.1063/1.2731370
Published: May 2007
View article titled, Plasma nanosheath formation with carrier accumulation and enhanced localized spontaneous emission at “quantum wedges” in textured GaN
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Journal Articles

Spherical nanoindentation and deformation mechanisms in freestanding GaN films

Sandip Basu, Michel W. Barsoum, Adrian D. Williams, T. D. Moustakas
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 083522 (2007)
https://doi.org/10.1063/1.2719016
Published: April 2007
View article titled, Spherical nanoindentation and deformation mechanisms in freestanding GaN films
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Journal Articles

Vanadium-based Ohmic contacts to n - Al Ga N in the entire alloy composition

Ryan France, Tao Xu, Papo Chen, R. Chandrasekaran, T. D. Moustakas
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 062115 (2007)
https://doi.org/10.1063/1.2458399
Published: February 2007
View article titled, Vanadium-based Ohmic contacts to n - Al Ga N in the entire alloy composition
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