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Journal Articles

Perspective: Highly ordered MoS2 thin films grown by multi-step chemical vapor deposition process

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S. N. Heo, Y. Ishiguro, R. Hayakawa, T. Chikyow, Y. Wakayama
Journal: APL Materials
APL Mater. 4, 030901 (2016)
https://doi.org/10.1063/1.4943288
Published: March 2016
View articletitled, Perspective: Highly ordered MoS2 thin films grown by multi-step chemical vapor deposition process
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Journal Articles

Influence of the substrate choice on the L1 phase formation of post-annealed Pt/Fe and Pt/Ag/Fe thin films

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I. A. Vladymyrskyi, M. V. Karpets, G. L. Katona, D. L. Beke, S. I. Sidorenko, T. Nagata, T. Nabatame, T. Chikyow, F. Ganss, G. Beddies, M. Albrecht, I. M. Makogon
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 044310 (2014)
https://doi.org/10.1063/1.4891477
Published: July 2014
View articletitled, Influence of the substrate choice on the L1 phase formation of post-annealed Pt/Fe and Pt/Ag/Fe thin films
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Journal Articles

Influence of the annealing atmosphere on the structural properties of FePt thin films

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I. A. Vladymyrskyi, M. V. Karpets, F. Ganss, G. L. Katona, D. L. Beke, S. I. Sidorenko, T. Nagata, T. Nabatame, T. Chikyow, G. Beddies, M. Albrecht, Iu. M. Makogon
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 164314 (2013)
https://doi.org/10.1063/1.4827202
Published: October 2013
View articletitled, Influence of the annealing atmosphere on the structural properties of FePt thin films
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Journal Articles

Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure

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T. Nagata, S. Oh, Y. Yamashita, H. Yoshikawa, N. Ikeno, K. Kobayashi, T. Chikyow, Y. Wakayama
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 043302 (2013)
https://doi.org/10.1063/1.4790298
Published: January 2013
View articletitled, Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure
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Journal Articles

Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface

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T. Nagata, S. Oh, Y. Yamashita, H. Yoshikawa, R. Hayakawa, K. Kobayashi, T. Chikyow, Y. Wakayama
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 173303 (2012)
https://doi.org/10.1063/1.4762834
Published: October 2012
View articletitled, Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface
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Journal Articles

Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure

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T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita, K. Kobayashi, T. Chikyow
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 223517 (2011)
https://doi.org/10.1063/1.3664781
Published: December 2011
View articletitled, Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure
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Journal Articles

Microstructure and interface control of GaN/MgAl2O4 grown by metalorganic chemical vapor deposition: Substrate-orientation dependence

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G. He, Shigefusa F. Chichibu, T. Chikyow
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 023504 (2011)
https://doi.org/10.1063/1.3606430
Published: July 2011
View articletitled, Microstructure and interface control of GaN/MgAl2O4 grown by metalorganic chemical vapor deposition: Substrate-orientation dependence
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Journal Articles

XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO 2 (101) thin films

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T. Nagata, O. Bierwagen, M. E. White, M. Y. Tsai, Y. Yamashita, H. Yoshikawa, N. Ohashi, K. Kobayashi, T. Chikyow, J. S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 232107 (2011)
https://doi.org/10.1063/1.3596449
Published: June 2011
View articletitled, XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO 2 (101) thin films
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Journal Articles

Interface chemistry and electronic structure of GaN / MgAl 2 O 4 revealed by angle-resolved photoemission spectroscopy

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G. He, T. Chikyow, Shigefusa F. Chichibu
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 161907 (2010)
https://doi.org/10.1063/1.3505153
Published: October 2010
View articletitled, Interface chemistry and electronic structure of GaN / MgAl 2 O 4 revealed by angle-resolved photoemission spectroscopy
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Journal Articles

Oxygen migration at Pt / HfO 2 / Pt interface under bias operation

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T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita, K. Kobayashi, T. Chikyow
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 082902 (2010)
https://doi.org/10.1063/1.3483756
Published: August 2010
View articletitled, Oxygen migration at Pt / HfO 2 / Pt interface under bias operation
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Journal Articles

Schottky barrier height behavior of Pt–Ru alloy contacts on single-crystal n-ZnO

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T. Nagata, J. Volk, M. Haemori, Y. Yamashita, H. Yoshikawa, R. Hayakawa, M. Yoshitake, S. Ueda, K. Kobayashi, T. Chikyow
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 103714 (2010)
https://doi.org/10.1063/1.3427562
Published: May 2010
View articletitled, Schottky barrier height behavior of Pt–Ru alloy contacts on single-crystal n-ZnO
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Journal Articles

Interface structure and the chemical states of Pt film on polar-ZnO single crystal

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T. Nagata, J. Volk, Y. Yamashita, H. Yoshikawa, M. Haemori, R. Hayakawa, M. Yoshitake, S. Ueda, K. Kobayashi, T. Chikyow
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 221904 (2009)
https://doi.org/10.1063/1.3149701
Published: June 2009
View articletitled, Interface structure and the chemical states of Pt film on polar-ZnO single crystal
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Journal Articles

Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films

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T. Nagata, M. Haemori, T. Chikyow
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 27, 492–495 (2009)
https://doi.org/10.1116/1.3097847
Published: April 2009
View articletitled, Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films
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Journal Articles

Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth

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T. Nagata, M. Haemori, Y. Sakuma, T. Chikyow, J. Anzai, T. Uehara
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 066106 (2009)
https://doi.org/10.1063/1.3086715
Published: March 2009
View articletitled, Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth
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Journal Articles

Fully engineered homoepitaxial zinc oxide nanopillar array for near-surface light wave manipulation

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J. Volk, A. Håkansson, H. T. Miyazaki, T. Nagata, J. Shimizu, T. Chikyow
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 183114 (2008)
https://doi.org/10.1063/1.2924282
Published: May 2008
View articletitled, Fully engineered homoepitaxial zinc oxide nanopillar array for near-surface light wave manipulation
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Journal Articles

Suppression of oxygen vacancy formation in Hf-based high- k dielectrics by lanthanum incorporation

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N. Umezawa, K. Shiraishi, S. Sugino, A. Tachibana, K. Ohmori, K. Kakushima, H. Iwai, T. Chikyow, T. Ohno, Y. Nara, K. Yamada
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 132904 (2007)
https://doi.org/10.1063/1.2789392
Published: September 2007
View articletitled, Suppression of oxygen vacancy formation in Hf-based high- k dielectrics by lanthanum incorporation
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Journal Articles

Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO 2 gate stack structures

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K. Ohmori, P. Ahmet, M. Yoshitake, T. Chikyow, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, Y. Nara, K.-S. Chang, M. L. Green, K. Yamada
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 084118 (2007)
https://doi.org/10.1063/1.2721384
Published: April 2007
View articletitled, Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO 2 gate stack structures
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Journal Articles

Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current

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J. Chen, T. Sekiguchi, N. Fukata, M. Takase, T. Chikyow, K. Yamabe, R. Hasunuma, Y. Akasaka, S. Inumiya, Y. Nara, K. Yamada
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 222104 (2006)
https://doi.org/10.1063/1.2392988
Published: November 2006
View articletitled, Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current
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Journal Articles

Epitaxial ScAlMg O 4 ( 0001 ) films grown on sapphire substrates by flux-mediated epitaxy

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T. Obata, R. Takahashi, I. Ohkubo, M. Oshima, K. Nakajima, T. Chikyow, H. Koinuma, Y. Matsumoto
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 191910 (2006)
https://doi.org/10.1063/1.2387124
Published: November 2006
View articletitled, Epitaxial ScAlMg O 4 ( 0001 ) films grown on sapphire substrates by flux-mediated epitaxy
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Journal Articles

Crystal structures and band offsets of ultrathin Hf O 2 – Y 2 O 3 composite films studied by photoemission and x-ray absorption spectroscopies

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M. Komatsu, R. Yasuhara, H. Takahashi, S. Toyoda, H. Kumigashira, M. Oshima, D. Kukuruznyak, T. Chikyow
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 172107 (2006)
https://doi.org/10.1063/1.2364601
Published: October 2006
View articletitled, Crystal structures and band offsets of ultrathin Hf O 2 – Y 2 O 3 composite films studied by photoemission and x-ray absorption spectroscopies
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