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Journal Articles

Temperature-induced unfolding of scrolled graphene and folded graphene

L. J. Yi, Y. Y. Zhang, C. M. Wang, T. C. Chang

J. Appl. Phys. 115, 204307 (2014)

https://doi.org/10.1063/1.4879295

Published: May 2014

View article titled, Temperature-induced unfolding of scrolled graphene and folded graphene

Journal Articles

Tungsten oxide/tungsten nanocrystals for nonvolatile memory devices

C. H. Chen, T. C. Chang, I. H. Liao, P. B. Xi, Joe Hsieh, Jason Chen, Tensor Huang, S. M. Sze, U. S. Chen, J. R. Chen

Appl. Phys. Lett. 92, 013114 (2008)

https://doi.org/10.1063/1.2822401

Published: January 2008

View article titled, Tungsten oxide/tungsten nanocrystals for nonvolatile memory devices

Journal Articles

Tungsten nanocrystal memory devices improved by supercritical fluid treatment

C. H. Chen, T. C. Chang, I. H. Liao, P. B. Xi, C. T. Tsai, P. Y. Yang, Joe Hsieh, Jason Chen, U. S. Chen, J. R. Chen

Appl. Phys. Lett. 91, 232104 (2007)

https://doi.org/10.1063/1.2803937

Published: December 2007

View article titled, Tungsten nanocrystal memory devices improved by supercritical fluid treatment

Journal Articles

Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu ∕ Cu Mg as source/drain metal

M. C. Wang, T. C. Chang, Po-Tsun Liu, R. W. Xiao, L. F. Lin, Y. Y. Li, F. S. Huang, J. R. Chen

Appl. Phys. Lett. 91, 062103 (2007)

https://doi.org/10.1063/1.2767147

Published: August 2007

View article titled, Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu ∕ Cu Mg as source/drain metal

Journal Articles

n + -doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metal

M. C. Wang, T. C. Chang, Po-Tsun Liu, R. W. Xiao, L. F. Lin, Y. Y. Li, F. S. Yeh, J. R. Chen

Appl. Phys. Lett. 91, 022113 (2007)

https://doi.org/10.1063/1.2749847

Published: July 2007

View article titled, n + -doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metal

Journal Articles

Nickel nanocrystals with Hf O 2 blocking oxide for nonvolatile memory application

F. M. Yang, T. C. Chang, P. T. Liu, U. S. Chen, P. H. Yeh, Y. C. Yu, J. Y. Lin, S. M. Sze, J. C. Lou

Appl. Phys. Lett. 90, 222104 (2007)

https://doi.org/10.1063/1.2743926

Published: May 2007

View article titled, Nickel nanocrystals with Hf O 2 blocking oxide for nonvolatile memory application

Journal Articles

Using double layer Co Si 2 nanocrystals to improve the memory effects of nonvolatile memory devices

F. M. Yang, T. C. Chang, P. T. Liu, P. H. Yeh, U. S. Chen, Y. C. Yu, J. Y. Lin, S. M. Sze, J. C. Lou

Appl. Phys. Lett. 90, 212108 (2007)

https://doi.org/10.1063/1.2742573

Published: May 2007

View article titled, Using double layer Co Si 2 nanocrystals to improve the memory effects of nonvolatile memory devices

Journal Articles

Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

M. C. Wang, T. C. Chang, Po-Tsun Liu, S. W. Tsao, J. R. Chen

Appl. Phys. Lett. 90, 192114 (2007)

https://doi.org/10.1063/1.2738192

Published: May 2007

View article titled, Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

Journal Articles

Memory characteristics of Co nanocrystal memory device with Hf O 2 as blocking oxide

F. M. Yang, T. C. Chang, P. T. Liu, P. H. Yeh, Y. C. Yu, J. Y. Lin, S. M. Sze, J. C. Lou

Appl. Phys. Lett. 90, 132102 (2007)

https://doi.org/10.1063/1.2716845

Published: March 2007

View article titled, Memory characteristics of Co nanocrystal memory device with Hf O 2 as blocking oxide

Journal Articles

Low-power memory device with NiSi 2 nanocrystals embedded in silicon dioxide layer

P. H. Yeh, C. H. Yu, L. J. Chen, H. H. Wu, P. T. Liu, T. C. Chang

Appl. Phys. Lett. 87, 193504 (2005)

https://doi.org/10.1063/1.2126150

Published: November 2005

View article titled, Low-power memory device with NiSi 2 nanocrystals embedded in silicon dioxide layer

Journal Articles

Fabrication of NiSi 2 nanocrystals embedded in SiO 2 with memory effect by oxidation of the amorphous Si ∕ Ni ∕ SiO 2 structure

P. H. Yeh, H. H. Wu, C. H. Yu, L. J. Chen, P. T. Liu, C. H. Hsu, T. C. Chang

J. Vac. Sci. Technol. A 23, 851–855 (2005)

https://doi.org/10.1116/1.1913678

Published: June 2005

View article titled, Fabrication of NiSi 2 nanocrystals embedded in SiO 2 with memory effect by oxidation of the amorphous Si ∕ Ni ∕ SiO 2 structure

Journal Articles

Leakage conduction behavior in electron-beam-cured nanoporous silicate films

Po-Tsun Liu, T. M. Tsai, T. C. Chang

Appl. Phys. Lett. 86, 182903 (2005)

https://doi.org/10.1063/1.1921329

Published: April 2005

View article titled, Leakage conduction behavior in electron-beam-cured nanoporous silicate films

Journal Articles

Quasisuperlattice storage: A concept of multilevel charge storage

T. C. Chang, S. T. Yan, P. T. Liu, C. W. Chen, H. H. Wu, S. M. Sze

Appl. Phys. Lett. 85, 248–250 (2004)

https://doi.org/10.1063/1.1772873

Published: July 2004

View article titled, Quasisuperlattice storage: A concept of multilevel charge storage

Journal Articles

Publisher’s Note: “Memory effect of oxide/SiC:O/oxide sandwiched structures” [Appl. Phys. Lett. 84 , 2094 (2004)]

T. C. Chang, S. T. Yan, F. M. Yang, P. T. Liu, S. M. Sze

Appl. Phys. Lett. 84, 4815 (2004)

https://doi.org/10.1063/1.1761633

Published: June 2004

View article titled, Publisher’s Note: “Memory effect of oxide/SiC:O/oxide sandwiched structures” [Appl. Phys. Lett. 84 , 2094 (2004)]

Journal Articles

Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application

T. C. Chang, T. M. Tsai, P. T. Liu, S. T. Yan, Y. C. Chang, H. Aoki, S. M. Sze, T. Y. Tseng

J. Vac. Sci. Technol. B 22, 1196–1201 (2004)

https://doi.org/10.1116/1.1755218

Published: May 2004

View article titled, Method to improve chemical-mechanical-planarization polishing rate of low-<em>k</em> methyl-silsesquiazane for ultralarge scale integrated interconnect application

Journal Articles

Leakage behavior of the quasi-superlattice stack for multilevel charge storage

T. C. Chang, S. T. Yan, P. T. Liu, C. W. Chen, H. H. Wu, S. M. Sze

Appl. Phys. Lett. 84, 3687–3689 (2004)

https://doi.org/10.1063/1.1739514

Published: May 2004

View article titled, Leakage behavior of the quasi-superlattice stack for multilevel charge storage

Journal Articles

A distributed charge storage with GeO 2 nanodots

T. C. Chang, S. T. Yan, C. H. Hsu, M. T. Tang, J. F. Lee, Y. H. Tai, P. T. Liu, S. M. Sze

Appl. Phys. Lett. 84, 2581–2583 (2004)

https://doi.org/10.1063/1.1697627

Published: April 2004

View article titled, A distributed charge storage with GeO 2 nanodots

Journal Articles

Memory effect of oxide/SiC:O/oxide sandwiched structures

T. C. Chang, S. T. Yan, F. M. Yang, P. T. Liu, S. M. Sze

Appl. Phys. Lett. 84, 2094–2096 (2004)

https://doi.org/10.1063/1.1675924

Published: March 2004

View article titled, Memory effect of oxide/SiC:O/oxide sandwiched structures

Journal Articles

Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications

Po-Tsun Liu, T. C. Chang, T. M. Tsai, Z. W. Lin, C. W. Chen, B. C. Chen, S. M. Sze

Appl. Phys. Lett. 83, 4226–4228 (2003)

https://doi.org/10.1063/1.1628401

Published: November 2003

View article titled, Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications

Journal Articles

Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment

T. C. Chang, P. T. Liu, Y. S. Mor, T. M. Tsai, C. W. Chen, Y. J. Mei, F. M. Pan, W. F. Wu, S. M. Sze

J. Vac. Sci. Technol. B 20, 1561–1566 (2002)

https://doi.org/10.1116/1.1495876

Published: August 2002

View article titled, Eliminating dielectric degradation of low-<em>k</em> organosilicate glass by trimethylchlorosilane treatment

NARROW

Topics

Temperature-induced unfolding of scrolled graphene and folded graphene

Tungsten oxide/tungsten nanocrystals for nonvolatile memory devices

Tungsten nanocrystal memory devices improved by supercritical fluid treatment

Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu ∕ Cu Mg as source/drain metal

n + -doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metal

Nickel nanocrystals with Hf O 2 blocking oxide for nonvolatile memory application

Using double layer Co Si 2 nanocrystals to improve the memory effects of nonvolatile memory devices

Photo-leakage-current characteristic of F incorporated hydrogenated amorphous silicon thin film transistor

Memory characteristics of Co nanocrystal memory device with Hf O 2 as blocking oxide

Low-power memory device with NiSi 2 nanocrystals embedded in silicon dioxide layer

Fabrication of NiSi 2 nanocrystals embedded in SiO 2 with memory effect by oxidation of the amorphous Si ∕ Ni ∕ SiO 2 structure

Leakage conduction behavior in electron-beam-cured nanoporous silicate films

Quasisuperlattice storage: A concept of multilevel charge storage

Publisher’s Note: “Memory effect of oxide/SiC:O/oxide sandwiched structures” [Appl. Phys. Lett. 84 , 2094 (2004)]

Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application

Leakage behavior of the quasi-superlattice stack for multilevel charge storage

A distributed charge storage with GeO 2 nanodots

Memory effect of oxide/SiC:O/oxide sandwiched structures

Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications

Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment

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