1-20 of 20
Sunae Seo
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

The enhanced low resistance contacts and boosted mobility in two-dimensional p-type WSe2 transistors through Ar+ ion-beam generated surface defects

Dahye Kim, Hyewon Du, Taekwang Kim, Somyeong Shin, Seonyeong Kim, Minho Song, ChangWon Lee, Jaeung Lee, Hyeonsik Cheong, David H. Seo, Sunae Seo
Journal: AIP Advances
AIP Advances 6, 105307 (2016)
https://doi.org/10.1063/1.4966049
Published: October 2016
View article titled, The enhanced low resistance contacts and boosted mobility in two-dimensional p-type WSe<sub>2</sub> transistors through Ar<sup>+</sup> ion-beam generated surface defects
Open the PDF for The enhanced low resistance contacts and boosted mobility in two-dimensional p-type WSe<sub>2</sub> transistors through Ar<sup>+</sup> ion-beam generated surface defects in another window
Includes: Supplementary data
Journal Articles

Tailoring the highest occupied molecular orbital level of poly(N-vinylcarbazole) hole transport layers in organic multilayer heterojunctions

Young Ran Park, Hyeong Jin Kim, Sungjin Im, Sunae Seo, Koo Shin, Won Kook Choi, Young Joon Hong
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 023301 (2016)
https://doi.org/10.1063/1.4939910
Published: January 2016
View article titled, Tailoring the highest occupied molecular orbital level of poly(N-vinylcarbazole) hole transport layers in organic multilayer heterojunctions
Open the PDF for Tailoring the highest occupied molecular orbital level of poly(N-vinylcarbazole) hole transport layers in organic multilayer heterojunctions in another window
Journal Articles

Schottky barrier contrasts in single and bi-layer graphene contacts for MoS2 field-effect transistors

Hyewon Du, Taekwang Kim, Somyeong Shin, Dahye Kim, Hakseong Kim, Ji Ho Sung, Myoung Jae Lee, David H. Seo, Sang Wook Lee, Moon-Ho Jo, Sunae Seo
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 233106 (2015)
https://doi.org/10.1063/1.4937266
Published: December 2015
View article titled, Schottky barrier contrasts in single and bi-layer graphene contacts for MoS<sub>2</sub> field-effect transistors
Open the PDF for Schottky barrier contrasts in single and bi-layer graphene contacts for MoS<sub>2</sub> field-effect transistors in another window
Includes: Supplementary data
Journal Articles

Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices

Sejoon Lee, Emil B. Song, Sung Min Kim, Youngmin Lee, David H. Seo, Sunae Seo, Kang L. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 243109 (2012)
https://doi.org/10.1063/1.4770381
Published: December 2012
View article titled, Reduced electron back-injection in Al<sub>2</sub>O<sub>3</sub>/AlO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>/graphene charge-trap memory devices
Open the PDF for Reduced electron back-injection in Al<sub>2</sub>O<sub>3</sub>/AlO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>/graphene charge-trap memory devices in another window
Journal Articles

Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition

M. Z. Iqbal, Arun Kumar Singh, M. W. Iqbal, Sunae Seo, Jonghwa Eom
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 084307 (2012)
https://doi.org/10.1063/1.4704197
Published: April 2012
View article titled, Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition
Open the PDF for Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition in another window
Journal Articles

Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices

Sejoon Lee, Emil B. Song, Sungmin Kim, David H. Seo, Sunae Seo, Tae Won Kang, Kang L. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 023109 (2012)
https://doi.org/10.1063/1.3675633
Published: January 2012
View article titled, Impact of gate work-function on memory characteristics in Al<sub>2</sub>O<sub>3</sub>/HfO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>/graphene charge-trap memory devices
Open the PDF for Impact of gate work-function on memory characteristics in Al<sub>2</sub>O<sub>3</sub>/HfO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>/graphene charge-trap memory devices in another window
Journal Articles

Robust bi-stable memory operation in single-layer graphene ferroelectric memory

Emil B. Song, Bob Lian, Sung Min Kim, Sejoon Lee, Tien-Kan Chung, Minsheng Wang, Caifu Zeng, Guangyu Xu, Kin Wong, Yi Zhou, Haider I. Rasool, David H. Seo, Hyun-Jong Chung, Jinseong Heo, Sunae Seo, Kang L. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 042109 (2011)
https://doi.org/10.1063/1.3619816
Published: July 2011
View article titled, Robust bi-stable memory operation in single-layer graphene ferroelectric memory
Open the PDF for Robust bi-stable memory operation in single-layer graphene ferroelectric memory in another window
Journal Articles

Suspended few-layer graphene beam electromechanical switch with abrupt on-off characteristics and minimal leakage current

Sung Min Kim, Emil B. Song, Sejoon Lee, Sunae Seo, David H. Seo, Yongha Hwang, R. Candler, Kang L. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 023103 (2011)
https://doi.org/10.1063/1.3610571
Published: July 2011
View article titled, Suspended few-layer graphene beam electromechanical switch with abrupt on-off characteristics and minimal leakage current
Open the PDF for Suspended few-layer graphene beam electromechanical switch with abrupt on-off characteristics and minimal leakage current in another window
Journal Articles

Probing nanoscale conductance of monolayer graphene under pressure

Sangku Kwon, Sunghyun Choi, H. J. Chung, Heejun Yang, Sunae Seo, Seung-Hoon Jhi, Jeong Young Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 013110 (2011)
https://doi.org/10.1063/1.3609317
Published: July 2011
View article titled, Probing nanoscale conductance of monolayer graphene under pressure
Open the PDF for Probing nanoscale conductance of monolayer graphene under pressure in another window
Journal Articles

Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition

Jung-Kyu Lee, Hyun-Jong Chung, Jinseong Heo, Sunae Seo, Il Hwan Cho, Hyuck-In Kwon, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 193504 (2011)
https://doi.org/10.1063/1.3589120
Published: May 2011
View article titled, Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition
Open the PDF for Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition in another window
Journal Articles

Fast transient charging at the graphene/ SiO 2 interface causing hysteretic device characteristics

Young Gon Lee, Chang Goo Kang, Uk Jin Jung, Jin Ju Kim, Hyeon Jun Hwang, Hyun-Jong Chung, Sunae Seo, Rino Choi, Byoung Hun Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 183508 (2011)
https://doi.org/10.1063/1.3588033
Published: May 2011
View article titled, Fast transient charging at the graphene/ SiO 2 interface causing hysteretic device characteristics
Open the PDF for Fast transient charging at the graphene/ SiO 2 interface causing hysteretic device characteristics in another window
Journal Articles

Highly air-stable electrical performance of graphene field effect transistors by interface engineering with amorphous fluoropolymer

Woo Cheol Shin, Sunae Seo, Byung Jin Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 153505 (2011)
https://doi.org/10.1063/1.3578396
Published: April 2011
View article titled, Highly air-stable electrical performance of graphene field effect transistors by interface engineering with amorphous fluoropolymer
Open the PDF for Highly air-stable electrical performance of graphene field effect transistors by interface engineering with amorphous fluoropolymer in another window
Journal Articles

Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes

David Seo, Sanghun Jeon, Sunae Seo, Ihun Song, Changjung Kim, Sungho Park, James S. Harris, U.-In Chung
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 172106 (2010)
https://doi.org/10.1063/1.3490245
Published: October 2010
View article titled, Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes
Open the PDF for Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes in another window
Journal Articles

Tilting of the spin orientation induced by Rashba effect in ferromagnetic metal layer

Ung Hwan Pi, Kee Won Kim, Ji Young Bae, Sung Chul Lee, Young Jin Cho, Kwang Seok Kim, Sunae Seo
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 162507 (2010)
https://doi.org/10.1063/1.3502596
Published: October 2010
View article titled, Tilting of the spin orientation induced by Rashba effect in ferromagnetic metal layer
Open the PDF for Tilting of the spin orientation induced by Rashba effect in ferromagnetic metal layer in another window
Journal Articles

Role of structural defects in the unipolar resistive switching characteristics of Pt ∕ Ni O ∕ Pt structures

Chanwoo Park, Sang Ho Jeon, Seung Chul Chae, Seungwu Han, Bae Ho Park, Sunae Seo, Dong-Wook Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 042102 (2008)
https://doi.org/10.1063/1.2963983
Published: July 2008
View article titled, Role of structural defects in the unipolar resistive switching characteristics of Pt ∕ Ni O ∕ Pt structures
Open the PDF for Role of structural defects in the unipolar resistive switching characteristics of Pt ∕ Ni O ∕ Pt structures in another window
Journal Articles

Resistance switching characteristics in Li-doped NiO

Kyooho Jung, Joonhyuk Choi, Yongmin Kim, Hyunsik Im, Sunae Seo, Ranju Jung, DongChul Kim, J.-S. Kim, B. H. Park, J. P. Hong
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 034504 (2008)
https://doi.org/10.1063/1.2837102
Published: February 2008
View article titled, Resistance switching characteristics in Li-doped NiO
Open the PDF for Resistance switching characteristics in Li-doped NiO in another window
Journal Articles

Observation of electric-field induced Ni filament channels in polycrystalline Ni O x film

Gyeong-Su Park, Xiang-Shu Li, Dong-Chirl Kim, Ran-Ju Jung, Myoung-Jae Lee, Sunae Seo
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 222103 (2007)
https://doi.org/10.1063/1.2813617
Published: November 2007
View article titled, Observation of electric-field induced Ni filament channels in polycrystalline Ni O x film
Open the PDF for Observation of electric-field induced Ni filament channels in polycrystalline Ni O x film in another window
Journal Articles

Decrease in switching voltage fluctuation of Pt ∕ Ni O x ∕ Pt structure by process control

Ranju Jung, Myoung-Jae Lee, Sunae Seo, Dong Chirl Kim, Gyeong-Su Park, Kihong Kim, Seungeon Ahn, Youngsoo Park, In-Kyeong Yoo, Jin-Soo Kim, Bae Ho Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 022112 (2007)
https://doi.org/10.1063/1.2755712
Published: July 2007
View article titled, Decrease in switching voltage fluctuation of Pt ∕ Ni O x ∕ Pt structure by process control
Open the PDF for Decrease in switching voltage fluctuation of Pt ∕ Ni O x ∕ Pt structure by process control in another window
Journal Articles

Hydrogen-induced degradation in ferroelectric Bi 3.25 La 0.75 Ti 3 O 12

Sunae Seo, Jong-Gul Yoon, J. D. Kim, T. K. Song, B. S. Kang, T. W. Noh, Y. K. Lee, Ch. J. Kim, I. S. Lee, J. K. Lee, Y. S. Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 1857–1859 (2002)
https://doi.org/10.1063/1.1505110
Published: September 2002
View article titled, Hydrogen-induced degradation in ferroelectric Bi 3.25 La 0.75 Ti 3 O 12
Open the PDF for Hydrogen-induced degradation in ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 in another window
Journal Articles

Mechanism of low temperature hydrogen-annealing-induced degradation in Pb ( Zr 0.4 Ti 0.6 ) O 3 capacitors

Sunae Seo, Jong-Gul Yoon, T. K. Song, B. S. Kang, T. W. Noh, Y. K. Lee, Ch. J. Kim, Y. S. Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 697–699 (2002)
https://doi.org/10.1063/1.1492006
Published: July 2002
View article titled, Mechanism of low temperature hydrogen-annealing-induced degradation in Pb ( Zr 0.4 Ti 0.6 ) O 3 capacitors
Open the PDF for Mechanism of low temperature hydrogen-annealing-induced degradation in Pb ( Zr 0.4 Ti 0.6 ) O 3 capacitors in another window