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Journal Articles

Substrate dependence of the self-heating in lead zirconate titanate (PZT) MEMS actuators

Yiwen Song, Kyuhwe Kang, Pannawit Tipsawat, Christopher Y. Cheng, Wanlin Zhu, Michael LaBella, Sukwon Choi, Susan E. Trolier-McKinstry

J. Appl. Phys. 135, 164107 (2024)

https://doi.org/10.1063/5.0204385

Published: April 2024

View article titled, Substrate dependence of the self-heating in lead zirconate titanate (PZT) MEMS actuators

Journal Articles

Thermal analysis of an α -Ga₂O₃ MOSFET using micro-Raman spectroscopy

Anwarul Karim, Yiwen Song, Daniel C. Shoemaker, Dae-Woo Jeon, Ji-Hyeon Park, Jae Kyoung Mun, Hun Ki Lee, Sukwon Choi

Appl. Phys. Lett. 123, 192104 (2023)

https://doi.org/10.1063/5.0164095

Published: November 2023

View article titled, Thermal analysis of an α -Ga2O3 MOSFET using micro-Raman spectroscopy

Journal Articles

Growth-microstructure-thermal property relations in AlN thin films

J. Appl. Phys. 132, 175108 (2022)

https://doi.org/10.1063/5.0106916

Published: November 2022

View article titled, Growth-microstructure-thermal property relations in AlN thin films

Journal Articles

β-Gallium oxide power electronics

APL Mater. 10, 029201 (2022)

https://doi.org/10.1063/5.0060327

Published: February 2022

View article titled, β-Gallium oxide power electronics

Journal Articles

A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Sukwon Choi, Samuel Graham, Srabanti Chowdhury, Eric R. Heller, Marko J. Tadjer, Gilberto Moreno, Sreekant Narumanchi

Appl. Phys. Lett. 119, 170501 (2021)

https://doi.org/10.1063/5.0056271

Published: October 2021

View article titled, A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Journal Articles

Thermal performance of diamond field-effect transistors

James Spencer Lundh, Daniel Shoemaker, A. Glen Birdwell, James D. Weil, Leonard M. De La Cruz, Pankaj B. Shah, Kevin G. Crawford, Tony G. Ivanov, Hiu Yung Wong, Sukwon Choi

Appl. Phys. Lett. 119, 143502 (2021)

https://doi.org/10.1063/5.0061948

Published: October 2021

View article titled, Thermal performance of diamond field-effect transistors

Includes: Supplementary data

Journal Articles

Thermal design of multi-fin Ga₂O₃ vertical transistors

Bikramjit Chatterjee, Wenshen Li, Kazuki Nomoto, Huili Grace Xing, Sukwon Choi

Appl. Phys. Lett. 119, 103502 (2021)

https://doi.org/10.1063/5.0056557

Published: September 2021

View article titled, Thermal design of multi-fin Ga2O3 vertical transistors

Includes: Supplementary data

Journal Articles

Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

James Spencer Lundh, Kathleen Coleman, Yiwen Song, Benjamin A. Griffin, Giovanni Esteves, Erica A. Douglas, Adam Edstrand, Stefan C. Badescu, Elizabeth A. Moore, Jacob H. Leach, Baxter Moody, Susan Trolier-McKinstry, Sukwon Choi

J. Appl. Phys. 130, 044501 (2021)

https://doi.org/10.1063/5.0056302

Published: July 2021

View article titled, Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

Includes: Supplementary data

Journal Articles

Local measurements of domain wall-induced self-heating in released PbZr_0.52Ti_0.48O₃ films

James Spencer Lundh, Wanlin Zhu, Yiwen Song, Song Won Ko, Charalampos Fragkiadakis, Peter Mardilovich, Susan Trolier-McKinstry, Sukwon Choi

J. Appl. Phys. 128, 214102 (2020)

https://doi.org/10.1063/5.0029582

Published: December 2020

View article titled, Local measurements of domain wall-induced self-heating in released PbZr0.52Ti0.48O3 films

Includes: Supplementary data

Journal Articles

Electro-thermal co-design of β -(Al_xGa_1-x)₂O₃/Ga₂O₃ modulation doped field effect transistors

Bikramjit Chatterjee, Yiwen Song, James Spencer Lundh, Yuewei Zhang, Zhanbo Xia, Zahabul Islam, Jacob Leach, Craig McGray, Praneeth Ranga, Sriram Krishnamoorthy, Aman Haque, Siddharth Rajan, Sukwon Choi

Appl. Phys. Lett. 117, 153501 (2020)

https://doi.org/10.1063/5.0021275

Published: October 2020

View article titled, Electro-thermal co-design of β -(AlxGa1-x)2O3/Ga2O3 modulation doped field effect transistors

Includes: Supplementary data

Journal Articles

Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

Weijie Wang, Jie Chen, James Spencer Lundh, Shahab Shervin, Seung Kyu Oh, Sara Pouladi, Zhoulyu Rao, Ja Yeon Kim, Min-Ki Kwon, Xiaohang Li, Sukwon Choi, Jae-Hyun Ryou

Appl. Phys. Lett. 116, 123501 (2020)

https://doi.org/10.1063/1.5142546

Published: March 2020

View article titled, Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

Includes: Supplementary data

Journal Articles

Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors

Bikramjit Chatterjee, Canberk Dundar, Thomas E. Beechem, Eric Heller, Dustin Kendig, Hyungtak Kim, Nazli Donmezer, Sukwon Choi

J. Appl. Phys. 127, 044502 (2020)

https://doi.org/10.1063/1.5123726

Published: January 2020

View article titled, Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors

Journal Articles

Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

James Spencer Lundh, Bikramjit Chatterjee, Yiwen Song, Albert G. Baca, Robert J. Kaplar, Thomas E. Beechem, Andrew A. Allerman, Andrew M. Armstrong, Brianna A. Klein, Anushka Bansal, Disha Talreja, Alexej Pogrebnyakov, Eric Heller, Venkatraman Gopalan, Joan M. Redwing, Brian M. Foley, Sukwon Choi

Appl. Phys. Lett. 115, 153503 (2019)

https://doi.org/10.1063/1.5115013

Published: October 2019

View article titled, Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Journal Articles

Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors

Weijie Wang, Seung Min Lee, Sara Pouladi, Jie Chen, Shahab Shervin, Seonno Yoon, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski, Bikramjit Chatterjee, Sukwon Choi, Jungwoo Oh, Jae-Hyun Ryou

Appl. Phys. Lett. 115, 103502 (2019)

https://doi.org/10.1063/1.5108832

Published: September 2019

View article titled, Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors

Journal Articles

Effect of Ge doping on growth stress and conductivity in Al_xGa_1-xN

Anushka Bansal, Ke Wang, James Spencer Lundh, Sukwon Choi, Joan M. Redwing

Appl. Phys. Lett. 114, 142101 (2019)

https://doi.org/10.1063/1.5080680

Published: April 2019

View article titled, Effect of Ge doping on growth stress and conductivity in AlxGa1-xN

Includes: Supplementary data

Journal Articles

Thermal characterization of gallium oxide Schottky barrier diodes

Bikramjit Chatterjee, Asanka Jayawardena, Eric Heller, David W. Snyder, Sarit Dhar, Sukwon Choi

Rev. Sci. Instrum. 89, 114903 (2018)

https://doi.org/10.1063/1.5053621

Published: November 2018

View article titled, Thermal characterization of gallium oxide Schottky barrier diodes

Journal Articles

High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance

Seung Kyu Oh, Moon Uk Cho, James Dallas, Taehoon Jang, Dong Gyu Lee, Sara Pouladi, Jie Chen, Weijie Wang, Shahab Shervin, Hyunsoo Kim, Seungha Shin, Sukwon Choi, Joon Seop Kwak, Jae-Hyun Ryou

Appl. Phys. Lett. 111, 133502 (2017)

https://doi.org/10.1063/1.5004799

Published: September 2017

View article titled, High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance

Journal Articles

The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors

Sukwon Choi, Eric Heller, Donald Dorsey, Ramakrishna Vetury, Samuel Graham

J. Appl. Phys. 114, 164501 (2013)

https://doi.org/10.1063/1.4826524

Published: October 2013

View article titled, The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors

Journal Articles

Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors

Sukwon Choi, Eric Heller, Donald Dorsey, Ramakrishna Vetury, Samuel Graham

J. Appl. Phys. 113, 093510 (2013)

https://doi.org/10.1063/1.4794009

Published: March 2013

View article titled, Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors

Journal Articles

Electrode influence on the transport through Sr Ru O 3 ∕ Cr -doped Sr Zr O 3 /metal junctions

Hwan-Soo Lee, James A. Bain, Sukwon Choi, Paul A. Salvador

Appl. Phys. Lett. 90, 202107 (2007)

https://doi.org/10.1063/1.2739081

Published: May 2007

View article titled, Electrode influence on the transport through Sr Ru O 3 ∕ Cr -doped Sr Zr O 3 /metal junctions

NARROW

Topics

Substrate dependence of the self-heating in lead zirconate titanate (PZT) MEMS actuators

Thermal analysis of an α -Ga₂O₃ MOSFET using micro-Raman spectroscopy

Growth-microstructure-thermal property relations in AlN thin films

β-Gallium oxide power electronics

A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Thermal performance of diamond field-effect transistors

Thermal design of multi-fin Ga₂O₃ vertical transistors

Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

Local measurements of domain wall-induced self-heating in released PbZr_0.52Ti_0.48O₃ films

Electro-thermal co-design of β -(Al_xGa_1-x)₂O₃/Ga₂O₃ modulation doped field effect transistors

Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors

Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors

Effect of Ge doping on growth stress and conductivity in Al_xGa_1-xN

Thermal characterization of gallium oxide Schottky barrier diodes

High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance

The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors

Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors

Electrode influence on the transport through Sr Ru O 3 ∕ Cr -doped Sr Zr O 3 /metal junctions

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