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Steven P. DenBaars
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Journal Articles

High external quantum efficiency in ultra-small amber InGaN microLEDs scaled to 1 μm

Jordan M. Smith, Panpan Li, Ryan Ley, Matthew S. Wong, Michael J. Gordon, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 251107 (2024)
https://doi.org/10.1063/5.0235915
Published: December 2024
View article titled, High external quantum efficiency in ultra-small amber InGaN microLEDs scaled to 1 <em>μ</em>m
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Journal Articles

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Rinat Yapparov, Tanay Tak, Jacob Ewing, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Saulius Marcinkevičius
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 083103 (2024)
https://doi.org/10.1063/5.0227663
Published: August 2024
View article titled, Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence
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Journal Articles

Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective

Panpan Li, Jacob Ewing, Matthew S. Wong, Yifan Yao, Hongjian Li, Srinivas Gandrothula, Jordan M. Smith, Mike Iza, Shuji Nakamura, Steven P. DenBaars
Journal: APL Materials
APL Mater. 12, 080901 (2024)
https://doi.org/10.1063/5.0222618
Published: August 2024
View article titled, Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective
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Journal Articles

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

Alejandro Quevedo, Feng Wu, Tsung-Yin Tsai, Jacob J. Ewing, Tanay Tak, Srinivas Gandrothula, Stephen Gee, Xianqing Li, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 042104 (2024)
https://doi.org/10.1063/5.0217727
Published: July 2024
View article titled, Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes
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Journal Articles

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Rinat Yapparov, Tanay Tak, Jacob Ewing, Feng Wu, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Saulius Marcinkevičius
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 031108 (2024)
https://doi.org/10.1063/5.0215336
Published: July 2024
View article titled, Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects
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Journal Articles

Erratum: “Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs” [Appl. Phys. Lett. 124 , 172102 (2024)]

Tanay Tak, Alejandro Quevedo, Feng Wu, Srinivas Gandrothula, Jacob J. Ewing, Stephen Gee, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 199901 (2024)
https://doi.org/10.1063/5.0215569
Published: May 2024
View article titled, Erratum: “Planarization of <em>p</em>-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs” [Appl. Phys. Lett. 124 , 172102 (2024)]
Open the PDF for Erratum: “Planarization of <em>p</em>-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs” [Appl. Phys. Lett. 124 , 172102 (2024)] in another window
Journal Articles

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

Saulius Marcinkevičius, Tanay Tak, Yi Chao Chow, Feng Wu, Rinat Yapparov, Steven P. DenBaars, Shuji Nakamura, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 181108 (2024)
https://doi.org/10.1063/5.0206357
Published: May 2024
View article titled, Dynamics of carrier injection through V-defects in long wavelength GaN LEDs
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Journal Articles

Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

Tanay Tak, Alejandro Quevedo, Feng Wu, Srinivas Gandrothula, Jacob J. Ewing, Stephen Gee, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 172102 (2024)
https://doi.org/10.1063/5.0200424
Published: April 2024
View article titled, Planarization of <em>p</em>-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs
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Journal Articles

10.6% external quantum efficiency germicidal UV LEDs grown on thin highly conductive n-AlGaN

Michael Wang, Feng Wu, Yifan Yao, Christian Zollner, Michael Iza, Michael Lam, Steven P. DenBaars, Shuji Nakamura, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 231101 (2023)
https://doi.org/10.1063/5.0165328
Published: December 2023
View article titled, 10.6% external quantum efficiency germicidal UV LEDs grown on thin highly conductive n-AlGaN
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Includes: Supplementary data
Journal Articles

Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes

Yi Chao Chow, Tanay Tak, Feng Wu, Jacob Ewing, Shuji Nakamura, Steven P. DenBaars, Yuh-Renn Wu, Claude Weisbuch, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 091103 (2023)
https://doi.org/10.1063/5.0167779
Published: August 2023
View article titled, Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes
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Includes: Supplementary data
Journal Articles

Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition

Editor’s Pick
Vineeta R. Muthuraj, Caroline E. Reilly, Thomas Mates, Shuji Nakamura, Steven P. DenBaars, Stacia Keller
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 142103 (2023)
https://doi.org/10.1063/5.0142941
Published: April 2023
View article titled, Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition
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Includes: Supplementary data
Journal Articles

Structure of V-defects in long wavelength GaN-based light emitting diodes

Feng Wu, Jacob Ewing, Cheyenne Lynsky, Michael Iza, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 035703 (2023)
https://doi.org/10.1063/5.0135278
Published: January 2023
View article titled, Structure of V-defects in long wavelength GaN-based light emitting diodes
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Journal Articles

Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges

Matthew S. Wong, Aditya Raj, Hsun-Ming Chang, Vincent Rienzi, Feng Wu, Jacob J. Ewing, Emily S. Trageser, Stephen Gee, Nathan C. Palmquist, Philip Chan, Ji Hun Kang, James S. Speck, Umesh K. Mishra, Shuji Nakamura, Steven P. DenBaars
Journal: AIP Advances
AIP Advances 13, 015107 (2023)
https://doi.org/10.1063/5.0131142
Published: January 2023
View article titled, Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges
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Journal Articles

Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells

Panpan Li, Haojun Zhang, Hongjian Li, Trevor Cohen, Ryan Anderson, Matthew S. Wong, Emily Trageser, Yi Chao Chow, Mattanjah de Vries, Shuji Nakamura, Steven P. DenBaars
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 071103 (2022)
https://doi.org/10.1063/5.0093264
Published: August 2022
View article titled, Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells
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Journal Articles

Red InGaN micro-light-emitting diodes ( > 620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact

Panpan Li, Hongjian Li, Haojun Zhang, Yunxuan Yang, Matthew S. Wong, Cheyenne Lynsky, Mike Iza, Michael J. Gordon, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 121102 (2022)
https://doi.org/10.1063/5.0086912
Published: March 2022
View article titled, Red InGaN micro-light-emitting diodes ( &gt; 620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact
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Journal Articles

Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition

Vineeta R. Muthuraj, Caroline E. Reilly, Thomas Mates, Stacia Keller, Shuji Nakamura, Steven P. DenBaars
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 101104 (2022)
https://doi.org/10.1063/5.0083893
Published: March 2022
View article titled, Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition
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Journal Articles

Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%

Featured
Panpan Li, Hongjian Li, Yunxuan Yang, Haojun Zhang, Pavel Shapturenka, Matthew Wong, Cheyenne Lynsky, Mike Iza, Michael J. Gordon, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 041102 (2022)
https://doi.org/10.1063/5.0078771
Published: January 2022
View article titled, Demonstration of ultra-small 5 × 5 <em>μ</em>m<sup>2</sup> 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%
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Journal Articles

Erratum: “Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition” [Appl. Phys. Lett. 119 , 202102 (2021)]

Matthew S. Wong, Nathan C. Palmquist, Jiaxiang Jiang, Philip Chan, Changmin Lee, Panpan Li, Ji Hun Kang, Yong Hyun Baek, Chae Hon Kim, Daniel A. Cohen, Tal Margalith, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 239901 (2021)
https://doi.org/10.1063/5.0079660
Published: December 2021
View article titled, Erratum: “Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition” [Appl. Phys. Lett. 119 , 202102 (2021)]
Open the PDF for Erratum: “Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition” [Appl. Phys. Lett. 119 , 202102 (2021)] in another window
Journal Articles

High-temperature electroluminescence properties of InGaN red 40 × 40 μ m2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%

Panpan Li, Aurelien David, Hongjian Li, Haojun Zhang, Cheyenne Lynsky, Yunxuan Yang, Mike Iza, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 231101 (2021)
https://doi.org/10.1063/5.0070275
Published: December 2021
View article titled, High-temperature electroluminescence properties of InGaN red 40 × 40 <em>μ</em> m<sup>2</sup> micro-light-emitting diodes with a peak external quantum efficiency of 3.2%
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Journal Articles

Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition

Matthew S. Wong, Nathan C. Palmquist, Jiaxiang Jiang, Philip Chan, Changmin Lee, Panpan Li, Ji Hun Kang, Yong Hyun Baek, Chae Hon Kim, Daniel A. Cohen, Tal Margalith, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 202102 (2021)
https://doi.org/10.1063/5.0073629
Published: November 2021
View article titled, Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition
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