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Journal Articles

Comprehensive characterization of nitrogen-related defect states in β-Ga₂O₃ using quantitative optical and thermal defect spectroscopy methods

Hemant Ghadi, Evan Cornuellue, Joe F. Mcglone, Alexander Senckowski, Shivam Sharma, Man Hoi Wong, Uttam Singisetti, Steven A. Ringel

APL Mater. 12, 091111 (2024)

https://doi.org/10.1063/5.0225570

Published: September 2024

View article titled, Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods

Journal Articles

Identification and characterization of deep nitrogen acceptors in β-Ga₂O₃ using defect spectroscopies

Hemant Ghadi, Joe F. McGlone, Evan Cornuelle, Alexander Senckowski, Shivam Sharma, Man Hoi Wong, Uttam Singisetti, Ymir Kalmann Frodason, Hartwin Peelaers, John L. Lyons, Joel B. Varley, Chris G. Van de Walle, Aaron Arehart, Steven A. Ringel

APL Mater. 11, 111110 (2023)

https://doi.org/10.1063/5.0160541

Published: November 2023

View article titled, Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies

Journal Articles

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Wenbo Li, Yuxuan Zhang, Zhaoying Chen, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart

Appl. Phys. Lett. 123, 112101 (2023)

https://doi.org/10.1063/5.0159560

Published: September 2023

View article titled, Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Journal Articles

Plasma-assisted deposition and characterization of Al₂O₃ dielectric layers on (001) β -Ga₂O₃

Sushovan Dhara, Ashok Dheenan, Nidhin Kurian Kalarickal, Hsien-Lien Huang, Ahmad Ehteshamul Islam, Chandan Joishi, Andreas Fiedler, Joe F. McGlone, Steven A. Ringel, Jinwoo Hwang, Siddharth Rajan

Appl. Phys. Lett. 123, 083504 (2023)

https://doi.org/10.1063/5.0146567

Published: August 2023

View article titled, Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β -Ga2O3

Includes: Supplementary data

Journal Articles

Demonstration of self-aligned β -Ga₂O₃ δ -doped MOSFETs with current density >550 mA/mm

Nidhin Kurian Kalarickal, Ashok Dheenan, Joe F. McGlone, Sushovan Dhara, Mark Brenner, Steven A. Ringel, Siddharth Rajan

Appl. Phys. Lett. 122, 113506 (2023)

https://doi.org/10.1063/5.0131996

Published: March 2023

View article titled, Demonstration of self-aligned β -Ga2O3 δ -doped MOSFETs with current density >550 mA/mm

Includes: Supplementary data

Book Chapter

Radiation Effects on β-Ga₂O₃ Materials and Devices

Book: Ultrawide Bandgap β-Ga₂O₃ Semiconductor: Theory and Applications

Series: AIPP Books, Principles

Published: February 2023

10.1063/9780735425033_012

EISBN: 978-0-7354-2503-3

ISBN: 978-0-7354-2500-2

Open the PDF for Radiation Effects on β-Ga2O3 Materials and Devices in another window

Journal Articles

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga₂O₃

Joe F. McGlone, Hemant Ghadi, Evan Cornuelle, Andrew Armstrong, George Burns, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel

J. Appl. Phys. 133, 045702 (2023)

https://doi.org/10.1063/5.0121416

Published: January 2023

View article titled, Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3

Journal Articles

Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga₂O₃

Hemant Ghadi, Joe F. McGlone, Evan Cornuelle, Zixuan Feng, Yuxuan Zhang, Lingyu Meng, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel

APL Mater. 10, 101110 (2022)

https://doi.org/10.1063/5.0101829

Published: October 2022

View article titled, Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3

Journal Articles

β -Ga₂O₃ MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy

Ashok V. Dheenan, Joe F. McGlone, Nidhin Kurian Kalarickal, Hsien-Lien Huang, Mark Brenner, Jinwoo Hwang, Steven A. Ringel, Siddharth Rajan

Appl. Phys. Lett. 121, 113503 (2022)

https://doi.org/10.1063/5.0103978

Published: September 2022

View article titled, β -Ga2O3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy

Journal Articles

β-Gallium oxide power electronics

APL Mater. 10, 029201 (2022)

https://doi.org/10.1063/5.0060327

Published: February 2022

View article titled, β-Gallium oxide power electronics

Journal Articles

Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β -Ga₂O₃

Hemant Ghadi, Joe F. McGlone, Zixuan Feng, A F M Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel

Appl. Phys. Lett. 117, 172106 (2020)

https://doi.org/10.1063/5.0025970

Published: October 2020

View article titled, Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β -Ga2O3

Journal Articles

Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

Yuxuan Zhang, Zhaoying Chen, Wenbo Li, Hyunsoo Lee, Md Rezaul Karim, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan, Hongping Zhao

J. Appl. Phys. 127, 215707 (2020)

https://doi.org/10.1063/5.0008758

Published: June 2020

View article titled, Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

Journal Articles

High electron density β-(Al_0.17Ga_0.83)₂O₃/Ga₂O₃ modulation doping using an ultra-thin (1 nm) spacer layer

Nidhin Kurian Kalarickal, Zhanbo Xia, Joe F. McGlone, Yumo Liu, Wyatt Moore, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan

J. Appl. Phys. 127, 215706 (2020)

https://doi.org/10.1063/5.0005531

Published: June 2020

View article titled, High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer

Journal Articles

Full bandgap defect state characterization of β-Ga₂O₃ grown by metal organic chemical vapor deposition

Hemant Ghadi, Joe F. McGlone, Christine M. Jackson, Esmat Farzana, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel

APL Mater. 8, 021111 (2020)

https://doi.org/10.1063/1.5142313

Published: February 2020

View article titled, Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition

Journal Articles

Influence of neutron irradiation on deep levels in Ge-doped (010) β -Ga₂O₃ layers grown by plasma-assisted molecular beam epitaxy

Esmat Farzana, Akhil Mauze, Joel B. Varley, Thomas E. Blue, James S. Speck, Aaron R. Arehart, Steven A. Ringel

APL Mater. 7, 121102 (2019)

https://doi.org/10.1063/1.5126463

Published: December 2019

View article titled, Influence of neutron irradiation on deep levels in Ge-doped (010) β -Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

Journal Articles

Mechanism of Si doping in plasma assisted MBE growth of β -Ga₂O₃

Nidhin Kurian Kalarickal, Zhanbo Xia, Joe McGlone, Sriram Krishnamoorthy, Wyatt Moore, Mark Brenner, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan

Appl. Phys. Lett. 115, 152106 (2019)

https://doi.org/10.1063/1.5123149

Published: October 2019

View article titled, Mechanism of Si doping in plasma assisted MBE growth of β -Ga2O3

Journal Articles

Impact of deep level defects induced by high energy neutron radiation in β -Ga₂O₃

Esmat Farzana, Max F. Chaiken, Thomas E. Blue, Aaron R. Arehart, Steven A. Ringel

APL Mater. 7, 022502 (2019)

https://doi.org/10.1063/1.5054606

Published: December 2018

View article titled, Impact of deep level defects induced by high energy neutron radiation in β -Ga2O3

Journal Articles

Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies

Esmat Farzana, Humberto M. Foronda, Christine M. Jackson, Towhidur Razzak, Zeng Zhang, James S. Speck, Aaron R. Arehart, Steven A. Ringel

J. Appl. Phys. 124, 145703 (2018)

https://doi.org/10.1063/1.5050949

Published: October 2018

View article titled, Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies

Journal Articles

Deep level defects in Ge-doped (010) β-Ga₂O₃ layers grown by plasma-assisted molecular beam epitaxy

Esmat Farzana, Elaheh Ahmadi, James S. Speck, Aaron R. Arehart, Steven A. Ringel

J. Appl. Phys. 123, 161410 (2018)

https://doi.org/10.1063/1.5010608

Published: March 2018

View article titled, Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

Journal Articles

Influence of metal choice on (010) β-Ga₂O₃ Schottky diode properties

Esmat Farzana, Zeng Zhang, Pran K. Paul, Aaron R. Arehart, Steven A. Ringel

Appl. Phys. Lett. 110, 202102 (2017)

https://doi.org/10.1063/1.4983610

Published: May 2017

View article titled, Influence of metal choice on (010) β-Ga2O3 Schottky diode properties

NARROW

Topics

Comprehensive characterization of nitrogen-related defect states in β-Ga₂O₃ using quantitative optical and thermal defect spectroscopy methods

Identification and characterization of deep nitrogen acceptors in β-Ga₂O₃ using defect spectroscopies

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Plasma-assisted deposition and characterization of Al₂O₃ dielectric layers on (001) β -Ga₂O₃

Demonstration of self-aligned β -Ga₂O₃ δ -doped MOSFETs with current density >550 mA/mm

Radiation Effects on β-Ga₂O₃ Materials and Devices

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga₂O₃

Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga₂O₃

β -Ga₂O₃ MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy

β-Gallium oxide power electronics

Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β -Ga₂O₃

Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

High electron density β-(Al_0.17Ga_0.83)₂O₃/Ga₂O₃ modulation doping using an ultra-thin (1 nm) spacer layer

Full bandgap defect state characterization of β-Ga₂O₃ grown by metal organic chemical vapor deposition

Influence of neutron irradiation on deep levels in Ge-doped (010) β -Ga₂O₃ layers grown by plasma-assisted molecular beam epitaxy

Mechanism of Si doping in plasma assisted MBE growth of β -Ga₂O₃

Impact of deep level defects induced by high energy neutron radiation in β -Ga₂O₃

Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies

Deep level defects in Ge-doped (010) β-Ga₂O₃ layers grown by plasma-assisted molecular beam epitaxy

Influence of metal choice on (010) β-Ga₂O₃ Schottky diode properties

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