Page 1 | Search Results | AIP Publishing

1-20 of 131

Sort by

Sort Order Select

Journal Articles

kV-class vertical p-n heterojunction rectifier based on ITO/diamond

Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Stephen J. Pearton

Appl. Phys. Lett. 126, 043501 (2025)

https://doi.org/10.1063/5.0245530

Published: January 2025

View article titled, kV-class vertical p-n heterojunction rectifier based on ITO/diamond

Journal Articles

Perspective on breakdown in Ga₂O₃ vertical rectifiers

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Fan Ren, Yu-Te Liao, Stephen J. Pearton

J. Vac. Sci. Technol. A 43, 018501 (2025)

https://doi.org/10.1116/6.0004146

Published: December 2024

View article titled, Perspective on breakdown in Ga2O3 vertical rectifiers

Journal Articles

kV-class Ga₂O₃ vertical rectifiers fabricated on 4-in. diameter substrates

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Fan Ren, Yu-Te Liao, Stephen J. Pearton

J. Vac. Sci. Technol. A 43, 012701 (2025)

https://doi.org/10.1116/6.0004141

Published: December 2024

View article titled, kV-class Ga2O3 vertical rectifiers fabricated on 4-in. diameter substrates

Journal Articles

EBIC studies of minority electron diffusion length in undoped p-type gallium oxide

Leonid Chernyak, Seth Lovo, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Corinne Sartel, Zeyu Chi, Yves Dumont, Ekaterine Chikoidze, Alfons Schulte, Arie Ruzin, Ulyana Shimanovich

AIP Advances 14, 115301 (2024)

https://doi.org/10.1063/5.0238027

Published: November 2024

View article titled, EBIC studies of minority electron diffusion length in undoped p-type gallium oxide

Journal Articles

Cryogenic temperature operation of NiO/Ga₂O₃ heterojunction and Ni/Au Schottky rectifiers

Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Madani Labed, Jang Hyeok Park, You Seung Rim, Fan Ren, Stephen J. Pearton

AIP Advances 14, 105326 (2024)

https://doi.org/10.1063/5.0233627

Published: October 2024

View article titled, Cryogenic temperature operation of NiO/Ga2O3 heterojunction and Ni/Au Schottky rectifiers

Journal Articles

Achievement of low turn-on voltage in Ga₂O₃ Schottky and heterojunction hybrid rectifiers using W/Au anode contact

Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton

AIP Advances 14, 095201 (2024)

https://doi.org/10.1063/5.0227210

Published: September 2024

View article titled, Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact

Journal Articles

Cathodoluminescence studies of electron injection effects in p-type gallium oxide

Leonid Chernyak, Alfons Schulte, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Corinne Sartel, Vincent Sallet, Zeyu Chi, Yves Dumont, Ekaterine Chikoidze, Arie Ruzin

AIP Advances 14, 085103 (2024)

https://doi.org/10.1063/5.0220201

Published: August 2024

View article titled, Cathodoluminescence studies of electron injection effects in p-type gallium oxide

Journal Articles

Switching of kV-class Ga₂O₃ heterojunction vertical rectifiers

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Meng-Hsun Yu, Yi-Ting Lin, Ying-Yu Yang, Fan Ren, Yu-Te Liao, Stephen J. Pearton

J. Vac. Sci. Technol. A 42, 053204 (2024)

https://doi.org/10.1116/6.0003839

Published: August 2024

View article titled, Switching of kV-class Ga2O3 heterojunction vertical rectifiers

Journal Articles

Assignments of vibrational lines to OD-impurity complexes for adventitious impurities in β-Ga₂O₃

Andrew Venzie, Michael Stavola, W. Beall Fowler, Evan R. Glaser, Marko J. Tadjer, Jason I. Forbus, Mary Ellen Zvanut, Stephen J. Pearton

APL Mater. 12, 071108 (2024)

https://doi.org/10.1063/5.0219979

Published: July 2024

View article titled, Assignments of vibrational lines to OD-impurity complexes for adventitious impurities in β-Ga2O3

Journal Articles

Dry and wet etching of single-crystal AlN

Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Nahid Sultan Al-Mamun, Aman Haque, Fan Ren, Stephen J. Pearton

J. Vac. Sci. Technol. A 42, 052601 (2024)

https://doi.org/10.1116/6.0003744

Published: July 2024

View article titled, Dry and wet etching of single-crystal AlN

Journal Articles

Determination of band offsets at the interfaces of NiO, SiO₂, Al₂O₃, and ITO with AlN

Hsiao-Hsuan Wan, Jian-Sian Li, Chiao-Ching Chiang, Xinyi Xia, David C. Hays, Nahid Sultan Al-Mamun, Aman Haque, Fan Ren, Stephen J. Pearton

J. Appl. Phys. 135, 235301 (2024)

https://doi.org/10.1063/5.0214291

Published: June 2024

View article titled, Determination of band offsets at the interfaces of NiO, SiO2, Al2O3, and ITO with AlN

Journal Articles

Temperature-induced degradation of GaN HEMT: An in situ heating study

Md Abu Jafar Rasel, Di Zhang, Aiping Chen, Melonie Thomas, Stephen D. House, Winson Kuo, John Watt, Ahmad Islam, Nicholas Glavin, M. Smyth, Aman Haque, Douglas E. Wolfe, Stephen J. Pearton

J. Vac. Sci. Technol. B 42, 032209 (2024)

https://doi.org/10.1116/6.0003490

Published: April 2024

View article titled, Temperature-induced degradation of GaN HEMT: An in situ heating study

Includes: Supplementary data

Journal Articles

Tutorial: Microscopic properties of O–H centers in β-Ga₂O₃ revealed by infrared spectroscopy and theory

Michael Stavola, W. Beall Fowler, Amanda Portoff, Andrew Venzie, Evan R. Glaser, Stephen J. Pearton

J. Appl. Phys. 135, 101101 (2024)

https://doi.org/10.1063/5.0196386

Published: March 2024

View article titled, Tutorial: Microscopic properties of O–H centers in β-Ga2O3 revealed by infrared spectroscopy and theory

Journal Articles

Selective and nonselective plasma etching of (Al_0.18Ga_0.82)₂O₃/ Ga₂O₃ heterostructures

Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Fikadu Alema, Andrei Osinsky, Stephen J. Pearton

J. Vac. Sci. Technol. A 42, 022603 (2024)

https://doi.org/10.1116/6.0003400

Published: February 2024

View article titled, Selective and nonselective plasma etching of (Al0.18Ga0.82)2O3/ Ga2O3 heterostructures

Journal Articles

High sensitivity saliva-based biosensor in detection of breast cancer biomarkers: HER2 and CA15-3

Hsiao-Hsuan Wan, Haochen Zhu, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Cheng-Tse Tsai, Yu-Te Liao, Dan Neal, Josephine F. Esquivel-Upshaw, Stephen J. Pearton

J. Vac. Sci. Technol. B 42, 023202 (2024)

https://doi.org/10.1116/6.0003370

Published: February 2024

View article titled, High sensitivity saliva-based biosensor in detection of breast cancer biomarkers: HER2 and CA15-3

Journal Articles

β-Ga₂O₃ orientation dependence of band offsets with SiO₂ and Al₂O₃

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, David C. Hays, Fan Ren, Stephen J. Pearton

J. Vac. Sci. Technol. A 41, 063205 (2023)

https://doi.org/10.1116/6.0003039

Published: September 2023

View article titled, β-Ga2O3 orientation dependence of band offsets with SiO2 and Al2O3

Journal Articles

Vertical NiO/β-Ga₂O₃ rectifiers grown by metalorganic chemical vapor deposition

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Timothy Jinsoo Yoo, Honggyu Kim, Andrei Osinsky, Fikadu Alema, Stephen J. Pearton

J. Vac. Sci. Technol. A 41, 052707 (2023)

https://doi.org/10.1116/6.0002884

Published: August 2023

View article titled, Vertical NiO/β-Ga2O3 rectifiers grown by metalorganic chemical vapor deposition

Journal Articles

Classes of O–D centers in unintentionally and Fe-doped β-Ga₂O₃ annealed in a D₂ ambient

Amanda Portoff, Andrew Venzie, Michael Stavola, W. Beall Fowler, Evan Glaser, Stephen J. Pearton

J. Appl. Phys. 134, 045701 (2023)

https://doi.org/10.1063/5.0160331

Published: July 2023

View article titled, Classes of O–D centers in unintentionally and Fe-doped β-Ga2O3 annealed in a D2 ambient

Includes: Supplementary data

Journal Articles

Ultrafast, room temperature rejuvenation of SiC Schottky diodes from forward current-induced degradation

Md Abu Jafar Rasel, Nahid Sultan Al-Mamun, Sergei Stepanoff, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen J. Pearton

Appl. Phys. Lett. 122, 204101 (2023)

https://doi.org/10.1063/5.0140490

Published: May 2023

View article titled, Ultrafast, room temperature rejuvenation of SiC Schottky diodes from forward current-induced degradation

Journal Articles

Hydrogen centers as a probe of V_Ga(2) defects in β -Ga₂O₃

Amanda Portoff, Michael Stavola, W. Beall Fowler, Stephen J. Pearton, Evan R. Glaser

Appl. Phys. Lett. 122, 062101 (2023)

https://doi.org/10.1063/5.0138904

Published: February 2023

View article titled, Hydrogen centers as a probe of VGa(2) defects in β -Ga2O3

NARROW

Topics

kV-class vertical p-n heterojunction rectifier based on ITO/diamond

Perspective on breakdown in Ga₂O₃ vertical rectifiers

kV-class Ga₂O₃ vertical rectifiers fabricated on 4-in. diameter substrates

EBIC studies of minority electron diffusion length in undoped p-type gallium oxide

Cryogenic temperature operation of NiO/Ga₂O₃ heterojunction and Ni/Au Schottky rectifiers

Achievement of low turn-on voltage in Ga₂O₃ Schottky and heterojunction hybrid rectifiers using W/Au anode contact

Cathodoluminescence studies of electron injection effects in p-type gallium oxide

Switching of kV-class Ga₂O₃ heterojunction vertical rectifiers

Assignments of vibrational lines to OD-impurity complexes for adventitious impurities in β-Ga₂O₃

Dry and wet etching of single-crystal AlN

Determination of band offsets at the interfaces of NiO, SiO₂, Al₂O₃, and ITO with AlN

Temperature-induced degradation of GaN HEMT: An in situ heating study

Tutorial: Microscopic properties of O–H centers in β-Ga₂O₃ revealed by infrared spectroscopy and theory

Selective and nonselective plasma etching of (Al_0.18Ga_0.82)₂O₃/ Ga₂O₃ heterostructures

High sensitivity saliva-based biosensor in detection of breast cancer biomarkers: HER2 and CA15-3

β-Ga₂O₃ orientation dependence of band offsets with SiO₂ and Al₂O₃

Vertical NiO/β-Ga₂O₃ rectifiers grown by metalorganic chemical vapor deposition

Classes of O–D centers in unintentionally and Fe-doped β-Ga₂O₃ annealed in a D₂ ambient

Ultrafast, room temperature rejuvenation of SiC Schottky diodes from forward current-induced degradation

Hydrogen centers as a probe of V_Ga(2) defects in β -Ga₂O₃

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only